TLC2942
HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
SLAS146B – NOVEMBER 1996 – REVISED JUNE 1997
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
VCO1, VCO2 electrical characteristics, V
DD
= 3 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OH
High-level output voltage IOH = –2 mA 2.4 V
V
OL
Low-level output voltage IOL = 2 mA 0.3 V
V
IT
Input threshold voltage
SELECT1, SELECT2,
VCOINHIBIT2, VCOINHIBIT1
0.9 1.5 2.1 V
I
I
Input current
SELECT1, SELECT2,
VCOINHIBIT2, VCOINHIBIT1
VI = VDD or GND ±1 µA
Z
i(VCOIN)
Input impedance VCOIN2, VCOIN1 VCOIN = 1/2 V
DD
10 MΩ
I
DD(INH)
VCO supply current (inhibit) (each chip) See Note 4 0.01 1 µA
I
DD(VCO)
VCO supply current (each chip) See Note 5 5 15 mA
NOTES: 4. The current into VCO VDD and LOGIC VDD when VCOINHIBIT = VDD, and the PFD is inhibited.
5. The current into VCO VDD and LOGIC VDD when VCOIN = 1/2 VDD, R
BIAS
= 3.3 kΩ, VCOINHIBIT = GND, and the PFD is inhibited.
PFD1, PFD2 electrical characteristic, V
DD
= 3 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OH
High-level output voltage IOH = –2 mA 2.7 V
V
OL
Low-level output voltage IOL = 2 mA 0.2 V
I
OZ
High-impedance output current
PFD INHIBIT = high,
VO = VDD or GND
±1 µA
V
IH
High-level input voltage
FIN–A1, FIN–B1,
FIN–A2, FIN–B2
2.7 V
V
IL
Low-level input voltage
FIN–A1, FIN–B1,
FIN–A2, FIN–B2
0.5 V
V
IT
Input threshold voltage PFD INHIBIT2, PFD INHIBIT1 0.9 1.5 2.1 V
C
i
Input capacitance
FIN–A1, FIN–B1,
FIN–A2, FIN–B2
5 pF
Z
i
Input impedance
FIN–A1, FIN–B1,
FIN–A2, FIN–B2
10 MΩ
I
DD(Z)
High-impedance state PFD supply current See Note 6 0.1 1 µA
I
DD(PFD)
PFD supply current See Note 7 0.1 1.5 mA
NOTES: 6. The current into LOGIC VDD, when FIN–A and FIN–B = GND, PFD INHIBIT= VDD, no load, and VCO OUT is inhibited.
7. The current into LOGIC VDD when FIN–A and FIN–B = 1 MHz with V
I(PP)
= 3 V rectangular wave, PFD INHIBIT = GND, no load,
and VCO OUT is inhibited.