Free-Running Read and Write Clocks Can
Be Asynchronous or Coincident
D
Read and Write Operations Synchronized
to Independent System Clocks
D
Input-Ready Flag Synchronized to Write
Clock
D
Output-Ready Flag Synchronized to Read
Clock
D
512 Words by 18 Bits
D
Low-Power Advanced CMOS Technology
D
Half-Full Flag and Programmable
Almost-Full/Almost-Empty Flag
D
Bidirectional Configuration and Width
Expansion Without Additional Logic
D
Fast Access Times of 12 ns With a 50-pF
Load and All Data Outputs Switching
Simultaneously
D
Data Rates up to 67 MHz
D
Pin-to-Pin Compatible With SN74ACT7805
and SN74ACT7813
D
Packaged in Shrink Small-Outline 300-mil
Package Using 25-mil Center-to-Center
Spacing
description
The SN74ACT7803 is a 512-word × 18-bit FIFO
RESET
WRTCLK
WRTEN2
WRTEN1
suited for buffering asynchronous datapaths up to
67-MHz clock rates and 12-ns access times. Two devices can be configured for bidirectional data buffering
without additional logic. Multiple distributed V
and GND pins, along with Texas Instruments patented output
CC
edge control (OEC) circuit, dampen simultaneous switching noise.
The write clock (WRTCLK) and read clock (RDCLK) are free running and can be asynchronous or coincident.
Data is written to memory on the rising edge of WRTCLK when WRTEN1 is high, WRTEN2
ready (IR) is high. Data is read from memory on the rising edge of RDCLK when RDEN
is low, and input
, OE1, and OE2 are low
and output ready (OR) is high. The first word written to memory is clocked through to the output buffer,
regardless of the RDEN
, OE1, and OE2 levels. The OR flag indicates that valid data is present on the output
buffer.
The FIFO can be reset asynchronously to WRTCLK and RDCLK. RESET
must be asserted while at least four
WRTCLK and four RDCLK rising edges occur to clear the synchronizing registers. Resetting the FIFO initializes
the IR, OR, and half-full (HF) flags low and the almost-full/almost-empty (AF/AE) flag high. The FIFO must be
reset upon power up.
The SN74ACT7803 is characterized for operation from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Widebus and OEC are trademarks of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
functional block diagram
SN74ACT7803
512 × 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SCAS191C – MARCH 1991 – REVISED APRIL 1998
OE1
OE2
D0–D17
RDCLK
RDEN
WRTCLK
WRTEN1
WRTEN2
RESET
PEN
Output
Control
Synchronous
Read
Control
Synchronous
Write
Control
Reset
Logic
Read
Pointer
Write
Pointer
Status-
Flag
Logic
Location 1
Location 2
512 × 18 RAM
Location 511
Location 512
Register
Q0–Q17
OR
IR
HF
AF/AE
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
SN74ACT7803
I/O
DESCRIPTION
512 × 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SCAS191C – MARCH 1991 – REVISED APRIL 1998
Terminal Functions
TERMINAL
NAMENO.
Almost-full/almost-empty flag. Depth-offset values can be programmed for AF/AE, or the default value
AF/AE24O
D0–D17
HF22OHalf-full flag. HF is high when the FIFO memory contains 256 or more words. HF is low after reset.
IR28O
OE1
OE2
OR29O
PEN
Q0–Q17
RDCLK32I
RDEN
RESET
WRTCLK25I
WRTEN1
WRTEN2
2–9, 11–12,
14–21
56
30
23I
33–34, 36–38,
40–43, 45–49,
51, 53–55
31I
1I
27
26
of 64 can be used for both the almost-empty offset (X) and the almost-full offset (Y). AF/AE is high when
memory contains X or fewer words or (512 – Y) or more words. AF/AE is high after reset.
I18-bit data input port
Input-ready flag. IR is synchronized to the low-to-high transition of WRTCLK. When IR is low , the FIFO
is full and writes are disabled. IR is low during reset and goes high on the second low-to-high transition
of WRTCLK after reset.
Output enables. When OE1, OE2, and RDEN are low and OR is high, data is read from the FIFO on
a low-to-high transition of RDCLK. When either OE1
I
outputs are in the high-impedance state.
Output-ready flag. OR is synchronized to the low-to-high transition of RDCLK. When OR is low, the
FIFO is empty and reads are disabled. Ready data is present on Q0–Q17 when OR is high. OR is low
during reset and goes high on the third low-to-high transition of RDCLK after the first word is loaded
to empty memory.
Program enable. After reset and before the first word is written to the FIFO, the binary value on D0–D7
is latched as an AF/AE offset value when PEN
18-bit data output port. After the first valid write to empty memory , the first word is output on Q0–Q17
on the third rising edge of RDCLK. OR also is asserted high at this time to indicate ready data. When
O
OR is low, the last word read from the FIFO is present on Q0–Q17.
Read clock. RDCLK is a continuous clock and can be asynchronous or coincident to WRTCLK. A
low-to-high transition of RDCLK reads data from memory when OE1
is high. OR is synchronous to the low-to-high transition of RDCLK.
Read enable. When RDEN, OE1, and OE2 are low and OR is high, data is read from the FIFO on the
low-to-high transition of RDCLK.
Reset. To reset the FIFO, four low-to-high transitions of RDCLK and four low-to-high transitions of
WRTCLK must occur while RESET
Write clock. WRTCLK is a continuous clock and can be asynchronous or coincident to RDCLK. A
low-to-high transition of WRTCLK writes data to memory when WRTEN2
IR is high. IR is synchronous to the low-to-high transition of WRTCLK.
Write enables. When WRTEN1 is high, WRTEN2 is low, and IR is high, data is written to the FIFO on
I
a low-to-high transition of WRTCLK.
is low. This sets HF, IR, and OR low and AF/AE high.
The AF/AE flag has two programmable limits: the almost-empty offset value (X) and the almost-full offset
value (Y). They can be programmed after the FIFO is reset and before the first word is written to memory. If the
offsets are not programmed, the default values of X = Y = 64 are used. The AF/AE flag is high when the FIFO
contains X or fewer words or (512 – Y) or more words.
Program enable (PEN
) should be held high throughout the reset cycle. PEN can be brought low only when IR
is high and WRTCLK is low . On the following low-to-high transition of WRTCLK, the binary value on D0–D7 is
stored as the almost-empty offset value (X) and the almost-full offset value (Y). Holding PEN
low for another
low-to-high transition of WRTCLK reprograms Y to the binary value on D0–D7 at the time of the second
WRTCLK low-to-high transition. When the offsets are being programmed, writes to the FIFO memory are
disabled, regardless of the state of the write enables (WRTEN1, WRTEN2
programmed for either X or Y (see Figure 4). To use the default values of X = Y = 64, PEN
RESET
WRTCLK
D0–D7
WRTEN1
34
PEN
X and YY
IR
). A maximum value of 255 can be
must be held high.
WRTEN2
Figure 4. Programming X and Y Separately
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Package thermal impedance, θ
Storage temperature range, T
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: The package thermal impedance is calculated in accordance with JESD 51.
VCC = 5.5 V,VI = VCC or 0±5µA
VCC = 5.5 V,VO = VCC or 0±5µA
VI = VCC – 0.2 V or 0400µA
VCC = 5.5 V,One input at 3.4 V ,Other inputs at VCC or GND1mA
VI = 0,f = 1 MHz4pF
VO = 0,f = 1 MHz8pF
Q outputs16161616
Flags8888
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
9
SN74ACT7803
UNIT
tsuSetup time
ns
thHold time
ns
PARAMETER
UNIT
t
ns
AF/AE
512 × 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SCAS191C – MARCH 1991 – REVISED APRIL 1998
timing requirements over recommended operating conditions (see Figures 1 through 5)
’ACT7803-15’ACT7803-20’ACT7803-25’ACT7803-40
MINMAXMINMAXMINMAXMINMAX
f
clock
t
w
†
To permit the clock pulse to be utilized for reset purposes
Clock frequency67504025MHz
WRTCLK high or low67812
Pulse duration
p
RDCLK high or low
PEN low89912
D0–D17 before WRTCLK↑4555
WRTEN1, WRTEN2
before WRTCLK↑
OE1, OE2 before RDCLK↑5566
RDEN before RDCLK↑4555
Reset: RESET low before first
WRTCLK↑ and RDCLK↑
PEN before WRTCLK↑5666
D0–D17 after WRTCLK↑0000
WRTEN1, WRTEN2
after WRTCLK↑
OE1, OE2, RDEN after RDCLK↑0000
Reset: RESET low after fourth
WRTCLK↑ and RDCLK↑
PEN high after WRTCLK↓0000
PEN low after WRTCLK↑2222
†
†
67812
4555
5666
0000
2222
ns
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature, C
f
max
t
pd
‡
t
pd
pd
t
PLH
t
PHL
t
PLH
t
PHL
t
en
t
dis
‡
This parameter is measured with a 30-pF load (see Figure 6).
= 50 pF (unless otherwise noted) (see Figure 5)
L
FROMTO
(INPUT)(OUTPUT)
WRTCLK or
RDCLK
RDCLK↑
RDCLK↑
WRTCLK↑IR38.5311313315
RDCLK↑OR38.5311313315
WRTCLK↑
RDCLK↑
WRTCLK↑HF715717719721ns
RDCLK↑HF715.5718720722ns
RESET low
RESET low
OE1, OE2
OE1, OE2
Any Q49.512413415420ns
Any Q8.5ns
AF/AE29211213215ns
HF210212214216ns
Any Q28.5211211211ns
Any Q29.5211214214ns
’ACT7803-15’ACT7803-20’ACT7803-25’ACT7803-40
MIN TYP†MAXMINMAXMINMAXMINMAX
67504025MHz
716.5719721723
717719721723
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
512 × 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
operating characteristics, VCC = 5 V, TA = 25°C
PARAMETERTEST CONDITIONSTYPUNIT
C
Power dissipation capacitanceOutputs enabledCL = 50 pF,f = 5 MHz53pF
Figure 8. SN74ACT7803 Idle ICC With RDCLK or WRTCLK Switching
70
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN74ACT7803
512 × 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SCAS191C – MARCH 1991 – REVISED APRIL 1998
APPLICATION INFORMATION
CLOCK A
W/R
CSA
A0–A17
SN74ACT7803
WRTCLK
A
18
WRTEN1
WRTEN2
D0–D17
SN74ACT7803
RDCLK
OE1
RDEN
OE2
Q0–Q17
RDCLK
OE1
RDEN
OE2
Q0–Q17
WRTCLK
WRTEN1
WRTEN2
D0–D17
18
CLOCK B
W/R
B
CSB
B0–B17
Figure 9. Bidirectional Configuration
WRTCLK
WRTEN1
WRTEN2
D0–D35
IR
36
SN74ACT7803
WRTCLK
WRTEN1
WRTEN2
IR
D0–D17
SN74ACT7803
WRTCLK
WRTEN1
WRTEN2
IR
D0–D17
RDCLK
RDEN
Q0–Q17
RDCLK
RDEN
Q0–Q17
OE1
OR
OE2
OE1
OR
OE2
RDCLK
OE1
OE2
OR
36
Q0–Q35
Figure 10. Word-Width Expansion: 512 × 36 Bits
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
13
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MA Y INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
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