Texas Instruments SN74ABT5403DW, SN74ABT5403DWR Datasheet

SN54ABT5403, SN74ABT5403
12-BIT LINE/MEMORY DRIVERS
WITH 3-STATE OUTPUTS
SCBS236B – JUNE 1992 – REVISED JANUARY 1997
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
D
D
State-of-the-Art
EPIC-ΙΙB
BiCMOS Design
Significantly Reduces Power Dissipation
D
Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
D
T ypical V
OLP
(Output Ground Bounce) < 1 V
at VCC = 5 V, TA = 25°C
D
T ypical V
OL V
(Output Undershoot) < 0.5 V at
VCC = 5 V, TA = 25°C
D
Package Options Include Plastic Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and DIPs (JT)
description
These 12-bit buffers and line drivers are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters.
The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1
or OE2) input is high, all 12 outputs are in the high-impedance state. These devices provide inverted data.
The outputs, which are designed to source or sink up to 12 mA, include equivalent 25- series resistors to reduce overshoot and undershoot.
T o ensure the high-impedance state during power up or power down, OE
should be tied to V
CC
through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN54ABT5403 is characterized for operation over the full military temperature range of –55°C to 125°C. The SN74ABT5403 is characterized for operation from –40°C to 85°C.
FUNCTION TABLE
INPUTS
OUTPUT
OE1 OE2 D
Y
L L L H L LH L H XX Z X H X Z
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
Y1 Y2 Y3 Y4 Y5 Y6
GND
Y7 Y8
Y9 Y10 Y11 Y12
OE1
D1 D2 D3 D4 D5 D6 D7 V
CC
D8 D9 D10 D11 D12 OE2
SN54ABT5403 . . . JT PACKAGE
SN74ABT5403 . . . DW PACKAGE
(TOP VIEW)
Y5
Y6
GND
Y7Y8Y9
Y10
D4D5D6D7VD8D9
3212827
12 13 14 15 16 17 18
5 6 7 8 9
10
11
25 24 23 22 21 20 19
D10 D11 D12 OE2 OE1 Y12 Y11
D3 D2 D1 Y1 Y2 Y3 Y4
426
SN54ABT5403 . . . FK PACKAGE
(TOP VIEW)
CC
Copyright 1997, Texas Instruments Incorporated
UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA information current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
EPIC-ΙΙB is a trademark of Texas Instruments Incorporated.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SN54ABT5403, SN74ABT5403 12-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS
SCBS236B – JUNE 1992 – REVISED JANUARY 1997
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
logic symbol
28
D1
27
D2
26
D3
25
D4
24
D5
Y1
1
Y2
2
Y3
3
Y4
4
Y5
5
Y6
6
Y7
8
Y8
9
23
D6
22
D7
20
D8
15
14
OE1 OE2
EN
&
Y9
10
Y10
11
19
D9
18
D10
1
17
D11 Y11
12
16
D12
Y12
13
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
Pin numbers shown are for the DW and JT packages.
logic diagram (positive logic)
Y1
To 11 Other Channels
OE1 OE2
D1
28
1
15
14
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, VCC –0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, VI (see Note 1) –0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage range applied to any output in the high or power-off state, VO –0.5 V to 5.5 V. . . . . . . . . . . . . . . . . . .
Current into any output in the low state, IO 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input clamp current, I
IK
(V
I
< 0) –18 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output clamp current, I
OK
(V
O
< 0) –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package thermal impedance, θ
JA
(see Note 2): DW package 78°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. The package thermal impedance is calculated in accordance with EIA/JEDEC Std JESD51.
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