TEXAS INSTRUMENTS OPA129 Technical data

OPA129
OPA129
O
P
A
1
2
9
SBOS026A – JANUARY 1994 – REVISED APRIL 2007
Ultra-Low Bias Current
OPERATIONAL AMPLIFIER
FEATURES
ULTRA-LOW BIAS CURRENT: 100fA max
LOW OFFSET: 2mV max
LOW DRIFT: 10µV/°C max
LOW NOISE: 15nV/Hz at 10kHz
PLASTIC DIP AND SO PACKAGES
DESCRIPTION
The OPA129 is an ultra-low bias current monolithic operational amplifier offered in an 8-pin PDIP and SO-8 package. Using advanced geometry dielectrically-isolated FET ( amplifier achieves a high performance level.
Difet
fabrication eliminates isolation-junction leakage current—the main contributor to input bias current with conventional monolithic FETs. This reduces input bias current by a factor of 10 to 100. Very low input bias current can be achieved without resorting to small-geometry FETs or CMOS designs which can suffer from much larger offset voltage, voltage noise, drift, and poor power-supply rejection.
The OPA129 special pinout eliminates leakage current that occurs with other op amps. Pins 1 and 4 have no internal connection, allowing circuit board guard traces— even with the surface-mount package version.
OPA129 is available in 8-pin DIP and SO packages, specified for operation from –40°C to +85°C.
®
Difet
) inputs, this monolithic
Difet
®
APPLICATIONS
PHOTODETECTOR PREAMPS
CHROMATOGRAPHY
ELECTROMETER AMPLIFIERS
MASS SPECTROMETERS
pH PROBE AMPLIFIERS
ION GAGE MEASUREMENT
–In
2
3
+In
Noise-Free
Cascode
30k 30k
Simplified Circuit
Substrate
8
7
V+
6
Output
5
V–
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Difet is a registered trademark of Texas Instruments. All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1994–2007, Texas Instruments Incorporated
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SPECIFICATIONS
ELECTRICAL
At VS = ±15V and TA = +25°C, unless otherwise noted. Pin 8 connected to ground.
OPA129PB, UB OPA129P, U
PARAMETER CONDITION MIN TYP MAX MIN TYP MAX UNITS INPUT BIAS CURRENT
vs Temperature Doubles every 10°C*
INPUT OFFSET CURRENT V OFFSET VOLTAGE
Input Offset Voltage VCM = 0V ±0.5 ±2 ±1 ±5mV
vs Temperature ±3 ±10 ±5 µV/°C
Supply Rejection V
NOISE
Voltage f = 10Hz 85 * nV/√Hz
Current f = 10kHz 0.1 * fA/√Hz
INPUT IMPEDANCE
Differential 1013 || 1 * || pF Common-Mode 10
VOLTAGE RANGE
Common-Mode Input Range ±10 ±12 * * V Common-Mode Rejection V
OPEN-LOOP GAIN, DC
Open-Loop Voltage Gain RL 2k 94 120 * * dB
FREQUENCY RESPONSE
Unity Gain, Small Signal 1 * MHz Full Power Response 20Vp-p, R Slew Rate V Settling Time: G = –1, R
0.1% 5*µs
0.01% 10 * µs
Overload Recovery, 50% Overdrive
RATED OUTPUT
Voltage Output RL = 2kΩ±12 ±13 * * V Current Output V Load Capacitance Stability Gain = +1 1000 * pF Short-Circuit Current ±35 ±55 * * mA
POWER SUPPLY
Rated Voltage ±15 * V Voltage Range, Derated Performance ±5 ±18 * * V Current, Quiescent I
TEMPERATURE
Specification Ambient Temperature –40 +85 * * °C Operating Ambient Temperature –40 +125 * * °C Storage –40 +125 * * °C Thermal Resistance
DIP-8 90 * °C/W SO-8 100 * °C/W
NOTES: (1) High-speed automated test.
(2) Overload recovery is defined as the time required for the output to return from saturation to linear operation following the removal of a 50% input overdrive.
(1)
VCM = 0V ±30 ±100 * ±250 fA
= 0V ±30 * fA
CM
= ±5V to ±18V ±3 ±100 * * µV/V
S
f = 100Hz 28 * nV/Hz
f = 1kHz 17 * nV/√Hz
f = 10kHz 15 * nV/√Hz
f
= 0.1Hz to 10Hz 4 * µV
B
15
|| 2 * || pF
= ±10V 80 118 * * dB
IN
= 2k 47 * kHz
L
= ±10V, RL = 2k 1 2.5 * * V/µs
O
= 2kΩ, 10V Step
L
(2)
G = –15 *µs
= ±12V ±6 ±10 * * mA
O
= 0mA 1.2 1.8 * * mA
O
θ
, Junction-to-Ambient
JA
PP
2
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OPA129
SBOS026A
ABSOLUTE MAXIMUM RATINGS
Power Supply Voltage ......................................................................±18V
Differential Input Voltage ............................................................ V– to V+
Input Voltage Range .................................................................... V– to V+
Storage Temperature Range ......................................... –40°C to +125°C
Operating Temperature Range ......................................–40°C to +125°C
Output Short Circuit Duration Junction Temperature (T
NOTE: (1) Short circuit may be to power supply common at +25°C ambient.
(1)
..................................................................
) ............................................................ +150°C
J
Continuous
ELECTROSTATIC DISCHARGE SENSITIVITY
Any integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to ob­serve proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance deg­radation to complete device failure. Precision inte­grated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet published specifications.
PACKAGE INFORMATION
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR
OPA129P DIP-8 P OPA129PB DIP-8 P OPA129U SO-8 D OPA129UB SO-8 D
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet, or see the TI website at www.ti.com.
(1)
CONNECTION DIAGRAM
Top View DIP/SO
1
NC
2
–In
3
+In
4
NC
NC: No internal connection.
OPA
8 7 6 5
Substrate V+ Output V–
TYPICAL PERFORMANCE CURVES
At TA = +25°C, +15VDC, unless otherwise noted.
140
120
100
80
60
Voltage Gain (dB)
40
20
0
OPA129
SBOS026A
OPEN-LOOP FREQUENCY RESPONSE
Gain
Phase
Margin
90°
1001 1M 10M
1k 10k 100k10
Frequency (Hz)
θ
45
90
135
Pulse Shift (degrees)
180
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140
120
100
80
60
40
Power Supply Rejection (dB)
20
POWER SUPPLY REJECTION vs FREQUENCY
0
1001 1M 10M1k 10k 100k10
+PSRR
–PSRR
Frequency (Hz)
3
TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, +15VDC, unless otherwise noted.
COMMON-MODE REJECTION
120
110
100
90
80
Common-Mode Rejection (dB)
70
15 1510 10
100pA
10pA
1pA
vs INPUT COMMON-MODE VOLTAGE
505
Common-Mode Voltage (V)
BIAS AND OFFSET CURRENT vs TEMPERATURE
IB and I
140
120
100
80
60
40
Common-Mode Rejection (dB)
20
10
OS
COMMON-MODE REJECTION vs FREQUENCY
0
1001 1M 10M1k 10k 100k10
Frequency (Hz)
BIAS AND OFFSET CURRENT
vs INPUT COMMON-MODE VOLTAGE
1
100
10
Bias and Offset Current (fA)
1
–50 50 125–25 0 25 75 100
Ambient Temperature (°C)
INPUT VOLTAGE NOISE SPECTRAL DENSITY
1k
100
Voltage Density (nV/Hz)
10
1 10 100 1k 10k 100k
Frequency (Hz)
0.1
Normalized Bias and Offset Current
0.01 –15 –10 –551015
Common-Mode Voltage (V)
30
)
PP
20
10
Output Voltage (V
0
FULL-POWER OUTPUT vs FREQUENCY
10k 100k1k 1M
0
Frequency (Hz)
4
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OPA129
SBOS026A
TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, +15VDC, unless otherwise noted.
GAIN BANDWIDTH AND SLEW RATE
4
3
2
1
Gain Bandwidth (MHz)
0
–75 125–50 75–25 0 25 50 100
2.0
1.5
1.0
SUPPLY CURRENT vs TEMPERATURE
vs TEMPERATURE
Ambient Temperature (°C)
GAIN BANDWIDTH AND SLEW RATE
4
3
2
Slew Rate (V/µs)
1
0
3
2
1
Gain Bandwidth (MHz)
0
OPEN-LOOP GAIN, PSR AND CMR vs TEMPERATURE
130
120
110
vs SUPPLY VOLTAGE
+Slew –Slew
GBW
515020
Supply Voltage (±V
10
)
CC
A
OL
CMR
6
4
2
Slew Rate (v/µs)
0
Supply Current (mA)
0.5
0
–75 125–50 75
LARGE SIGNAL TRANSIENT RESPONSE
10
0
Output Voltage (V)
–10
05025
–25 0 25 50 100
Ambient Temperature (°C)
5V
Time (µs)
5µs
100
PSR, CMR, Voltage Gain (dB)
90
–75 125–50 75–25 0 25 50 100
Ambient Temperature (°C)
SMALL SIGNAL TRANSIENT RESPONSE
80
40
0
Output Voltage (mV)
40
80
20mV
010
2468
Time (µs)
1µs
PSR
OPA129
SBOS026A
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5
TYPICAL PERFORMANCE CURVES (CONT)
TA = +25°C, +15VDC, unless otherwise noted.
COMMON-MODE INPUT RANGE vs SUPPLY VOLTAGE
15
10
5
Common-Mode Voltage (+V)
0
510020
Supply Voltage (±V
15
)
CC
APPLICATIONS INFORMATION
NON-STANDARD PINOUT
The OPA129 uses a non-standard pinout to achieve lowest possible input bias current. The negative power supply is connected to pin 5—see Figure 1. This is done to reduce the leakage current from the V- supply (pin 4 on conventional op amps) to the op amp input terminals. With this new pinout, sensitive inputs are separated from both power supply pins.
R
F
R
V
IN
IN
FIGURE 1. Offset Adjust Circuit.
OFFSET VOLTAGE TRIM
The OPA129 has no conventional offset trim connections. Pin 1, next to the critical inverting input, has no internal connection. This eliminates a source of leakage current and allows guarding of the input terminals. Pin 1 and pin 4, next to the two input pins, have no internal connection. This allows an optimized circuit board layout with guarding—see the Circuit Board Layout section.
V+
2
3
7
OPA129
470k 470k
6
5
V–
V
OUT
V+
0.1µF220 V–
BIAS CURRENT vs ADDITIONAL POWER DISSIPATION
100pA
10pA
1pA
100
Bias Current (fA)
10
1
0 200 35050 100 150 250 300
Additional Power Dissipation (mW)
Due to its laser-trimmed input stage, most applications do not require external offset voltage trimming. If trimming is required, the circuit shown in Figure 1 can be used. Power supply voltages are divided down, filtered and applied to the non-inverting input. The circuit shown is sensitive to varia­tion in the supply voltages. Regulation can be added, if needed.
GUARDING AND SHIELDING
Ultra-low input bias current op amps require precautions to achieve best performance. Leakage current on the surface of circuit board can exceed the input bias current of the ampli­fier. For example, a circuit board resistance of 1012Ω from a power supply pin to an input pin produces a current of 15pA—more than 100 times the input bias current of the op amp.
To minimize surface leakage, a guard trace should com­pletely surround the input terminals and other circuitry connecting to the inputs of the op amp. The DIP package should have a guard trace on both sides of the circuit board. The guard ring should be driven by a circuit node equal in potential to the op amp inputs—see Figure 2. The substrate, pin 8, should also be connected to the circuit board guard to assure that the amplifier is fully surrounded by the guard potential. This minimizes leakage current and noise pick-up.
Careful shielding is required to reduce noise pickup. Shield­ing near feedback components may also help reduce noise pick-up.
Triboelectric effects (friction-generated charge) can be a troublesome source of errors. Vibration of the circuit board, input connectors and input cables can cause noise and drift. Make the assembly as rigid as possible. Attach cables to avoid motion and vibration. Special low noise or low leak­age cables may help reduce noise and leakage current. Keep all input connections as short possible. Surface-mount com­ponents may reduce circuit board size and allow a more rigid assembly.
6
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OPA129
SBOS026A
CIRCUIT BOARD LAYOUT
2
3
6
8
OPA129
Output
Pin photodiode
HP 5082-4204
5
7
+15V
–15V
0.1µF
5 x 109V/W
0.1µF
1010Ω
~1pF to prevent gain peaking
Guard
Circuit must be well shielded.
2
3
6
7
5
8
OPA129
1000M
R
F
Output
V
O
= –IIN R
F
VO = –10V/nA
18k
2k
Current
Input
I
IN
V–
V+
The OPA129 uses a new pinout for ultra low input bias current. Pin 1 and pin 4 have no internal connection. This allows ample circuit board space for a guard ring surround­ing the op amp input pins—even with the tiny SO-8 surface­mount package. Figure 3 shows suggested circuit board layouts. The guard ring should be connected to pin 8 (sub­strate) as shown. It should be driven by a circuit node equal in potential to the input terminals of the op amp—see Figure 2 for common circuit configurations.
TESTING
Accurately testing the OPA129 is extremely difficult due to its high performance. Ordinary test equipment may not be able to resolve the amplifier’s extremely low bias current.
Inaccurate bias current measurements can be due to:
1. Test socket leakage.
2. Unclean package.
3. Humidity or dew point condensations.
4. Circuit contamination from fingerprints or anti-static treatment chemicals.
5. Test ambient temperature.
6. Load power dissipation.
7. Mechanical stress.
8. Electrostatic and electromagnetic interference.
(A) Non-Inverting
2
3
In
8
Out
6
In
(C) Inverting
In
2
3
8
(B) Buffer
2
3
Out
6
8
6
Out
FIGURE 4. Current-to-Voltage Converter.
500 9.5k
2
OPA129
3
V+
8
7
6
5
V–
Output
pH Probe
R
500M
S
50mV Out
Guard
FIGURE 5. High Impedance (1015Ω) Amplifier.
C
10pF
F
11
10
R
F
V+
8
2
Q
OPA129
3
7
5
Low frequency cutoff =
V–
1/(2πR V
OUT
6
= –Q/C
) = 0.16Hz
FCF
Output
1VDC
V
OUT
F
Guard top and bottom of board.
FIGURE 2. Connection of Input Guard.
18
4
(A) DIP package
FIGURE 3. Suggested Board Layout for Input Guard.
OPA129
SBOS026A
(B) SOIC package
5
18
4
5
Connect to proper circuit node, depending on circuit
V+
configuration (see Figure 2).
V
0
V–
Connect to proper circuit node, depending on circuit
V+
configuration (see Figure 2).
V
0
V–
FIGURE 6. Piezoelectric Transducer Charge Amplifier.
FIGURE 7. Sensitive Photodiode Amplifier.
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7
PACKAGE OPTION ADDENDUM
www.ti.com
24-Feb-2009
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package Drawing
Pins Package
Qty
Eco Plan
OPA129P OBSOLETE PDIP P 8 TBD Call TI Call TI
OPA129PB OBSOLETE PDIP P 8 TBD Call TI CallTI
OPA129U ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br)
OPA129UB ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br)
OPA129UB/2K5 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
OPA129UB/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
OPA129UBE4 ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br)
OPA129UBG4 ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br)
OPA129UE4 ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)
Lead/Ball Finish MSL Peak Temp
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
(3)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2009
TAPE AND REEL INFORMATION
*All dimensions arenominal
Device Package
OPA129UB/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
Type
Package Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2009
*All dimensions arenominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
OPA129UB/2K5 SOIC D 8 2500 346.0 346.0 29.0
Pack Materials-Page 2
MECHANICAL DATA
MPDI001A – JANUARY 1995 – REVISED JUNE 1999
P (R-PDIP-T8) PLASTIC DUAL-IN-LINE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
0.021 (0,53)
0.015 (0,38)
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice. C. Falls within JEDEC MS-001
4
0.070 (1,78) MAX
0.020 (0,51) MIN
0.200 (5,08) MAX
0.125 (3,18) MIN
0.100 (2,54)
0.010 (0,25)
Seating Plane
M
0.325 (8,26)
0.300 (7,62)
0.015 (0,38)
Gage Plane
0.010 (0,25) NOM
0.430 (10,92) MAX
4040082/D 05/98
For the latest package information, go to http://www.ti.com/sc/docs/package/pkg_info.htm
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