The OPA129 is an ultra-low bias current monolithic
operational amplifier offered in an 8-pin PDIP and
SO-8 package. Using advanced geometry
dielectrically-isolated FET (
amplifier achieves a high performance level.
Difet
fabrication eliminates isolation-junction leakage
current—the main contributor to input bias current with
conventional monolithic FETs. This reduces
input bias current by a factor of 10 to 100. Very low
input bias current can be achieved without resorting to
small-geometry FETs or CMOS designs which can
suffer from much larger offset voltage, voltage noise,
drift, and poor power-supply rejection.
The OPA129 special pinout eliminates leakage current
that occurs with other op amps. Pins 1 and 4 have no
internal connection, allowing circuit board guard traces—
even with the surface-mount package version.
OPA129 is available in 8-pin DIP and SO packages,
specified for operation from –40°C to +85°C.
®
Difet
) inputs, this monolithic
Difet
®
APPLICATIONS
● PHOTODETECTOR PREAMPS
● CHROMATOGRAPHY
● ELECTROMETER AMPLIFIERS
● MASS SPECTROMETERS
● pH PROBE AMPLIFIERS
● ION GAGE MEASUREMENT
–In
2
3
+In
Noise-Free
Cascode
30kΩ30kΩ
Simplified Circuit
Substrate
8
7
V+
6
Output
5
V–
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Difet is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
(2) Overload recovery is defined as the time required for the output to return from saturation to linear operation following the removal of a 50% input
overdrive.
(1)
VCM = 0V±30±100*±250fA
= 0V±30*fA
CM
= ±5V to ±18V±3±100**µV/V
S
f = 100Hz28*nV/√Hz
f = 1kHz17*nV/√Hz
f = 10kHz15*nV/√Hz
f
= 0.1Hz to 10Hz4*µV
B
15
|| 2*Ω || pF
= ±10V80118**dB
IN
= 2kΩ47*kHz
L
= ±10V, RL = 2kΩ12.5**V/µs
O
= 2kΩ, 10V Step
L
(2)
G = –15 *µs
= ±12V±6±10**mA
O
= 0mA1.21.8**mA
O
θ
, Junction-to-Ambient
JA
PP
2
www.ti.com
OPA129
SBOS026A
ABSOLUTE MAXIMUM RATINGS
Power Supply Voltage ......................................................................±18V
Differential Input Voltage ............................................................ V– to V+
Input Voltage Range .................................................................... V– to V+
Storage Temperature Range ......................................... –40°C to +125°C
Operating Temperature Range ......................................–40°C to +125°C
Output Short Circuit Duration
Junction Temperature (T
NOTE: (1) Short circuit may be to power supply common at +25°C ambient.
Any integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe proper handling and installation procedures can
cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage
because very small parametric changes could cause
the device not to meet published specifications.
NOTE: (1) For the most current package and ordering information, see the
Package Option Addendum at the end of this data sheet, or see the TI website
at www.ti.com.
(1)
CONNECTION DIAGRAM
Top ViewDIP/SO
1
NC
2
–In
3
+In
4
NC
NC: No internal connection.
OPA
8
7
6
5
Substrate
V+
Output
V–
TYPICAL PERFORMANCE CURVES
At TA = +25°C, +15VDC, unless otherwise noted.
140
120
100
80
60
Voltage Gain (dB)
40
20
0
OPA129
SBOS026A
OPEN-LOOP FREQUENCY RESPONSE
Gain
Phase
Margin
≈90°
10011M10M
1k10k100k10
Frequency (Hz)
θ
45
90
135
Pulse Shift (degrees)
180
www.ti.com
140
120
100
80
60
40
Power Supply Rejection (dB)
20
POWER SUPPLY REJECTION vs FREQUENCY
0
10011M10M1k10k100k10
+PSRR
–PSRR
Frequency (Hz)
3
TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, +15VDC, unless otherwise noted.
COMMON-MODE REJECTION
120
110
100
90
80
Common-Mode Rejection (dB)
70
15151010
100pA
10pA
1pA
vs INPUT COMMON-MODE VOLTAGE
505
Common-Mode Voltage (V)
BIAS AND OFFSET CURRENT vs TEMPERATURE
IB and I
140
120
100
80
60
40
Common-Mode Rejection (dB)
20
10
OS
COMMON-MODE REJECTION vs FREQUENCY
0
10011M10M1k10k100k10
Frequency (Hz)
BIAS AND OFFSET CURRENT
vs INPUT COMMON-MODE VOLTAGE
1
100
10
Bias and Offset Current (fA)
1
–5050125–2502575100
Ambient Temperature (°C)
INPUT VOLTAGE NOISE SPECTRAL DENSITY
1k
100
Voltage Density (nV/√Hz)
10
1101001k10k100k
Frequency (Hz)
0.1
Normalized Bias and Offset Current
0.01
–15–10–551015
Common-Mode Voltage (V)
30
)
PP
20
10
Output Voltage (V
0
FULL-POWER OUTPUT vs FREQUENCY
10k100k1k1M
0
Frequency (Hz)
4
www.ti.com
OPA129
SBOS026A
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