LM2734 Thin SOT 1-A Load Step-Down DC-DC Regulator
1Features3Description
1
•Thin SOT-6 Package
•3.0-V to 20-V Input Voltage Range
•0.8-V to 18-V Output Voltage Range
•1-A Output Current
•550-kHz (LM2734Y) and 1.6-MHz (LM2734X)
Switching Frequencies
•300-mΩ NMOS Switch
•30-nA Shutdown Current
•0.8-V, 2% Internal Voltage Reference
•Internal Soft-Start
•Current-Mode, PWM Operation
•WEBENCH®Online Design Tool
•Thermal Shutdown
•LM2734XQ and LM2734YQ are AEC-Q100 Grade
1 Qualified and are Manufactured on an
Automotive Grade Flow.
2Applications
•Local Point-of-Load Regulation
•Core Power in HDDs
•Set-Top Boxes
•Battery-Powered Devices
•USB Powered Devices
•DSL Modems
•Notebook Computers
•Automotive
Typical Application Circuit
TheLM2734regulatorisamonolithic,highfrequency, PWM step-down DC-DC converter in a 6pin Thin SOT package. The device provides all the
active functions to provide local DC-DC conversion
with fast transient response and accurate regulation
in the smallest possible PCB area.
With a minimum of external components and online
design support through WEBENCH, the LM2734
regulator is easy to use. The ability to drive 1-A loads
with an internal 300-mΩ NMOS switch using state-ofthe-art 0.5-µm BiCMOS technology results in the best
power density available. The world-class control
circuitry allows for on-times as low as 13 ns, thus
supporting exceptionally high-frequency conversion
over the entire 3-V to 20-V input operating range
down to the minimum output voltage of 0.8 V.
Switching frequency is internally set to 550 kHz
(LM2734Y) or 1.6 MHz (LM2734X), allowing the use
of extremely small surface-mount inductors and chip
capacitors. Even though the operating frequencies
are very high, efficiencies up to 90% are easy to
achieve. External shutdown is included, featuring an
ultra-low standby current of 30 nA.
The LM2734 regulator uses current-mode control and
internal compensation to provide high-performance
regulation over a wide range of operating conditions.
Additional features include internal soft-start circuitry
to reduce inrush current, pulse-by-pulse current limit,
thermal shutdown, and output overvoltage protection.
Device Information
PART NUMBERPACKAGEBODY SIZE (NOM)
LM2734SOT (6)2.90 mm x 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Efficiency vs Load Current
VIN= 5 V, V
OUT
LM2734
(1)
= 3.3 V
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Changes from Revision I (April 2013) to Revision JPage
•Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section.................................................................................................. 1
over operating free-air temperature (unless otherwise noted)
V
IN
SW Voltage-0.524V
Boost Voltage-0.530V
Boost to SW Voltage-0.56.0V
FB Voltage-0.50.3V
EN Voltage-0.5VIN+ 0.3V
Junction Temperature150°C
Soldering Information Reflow Peak Pkg. Temp.(15s)260°C
T
Storage temperature-65150°C
stg
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
6.2ESD Ratings
V
Electrostatic dischargeHuman Body Model (HBM), per ANSI/ESDA/JEDEC JS001
ESD
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(1)(2)
MINMAXUNIT
-0.524V
VALUEUNIT
(1)
±2000V
6.3Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MINNOMMAXUNIT
V
IN
SW Voltage-0.520V
Boost Voltage-0.525V
Boost to SW Voltage1.65.5V
Junction Temperature Range−40125°C
The LM2734 device is a constant frequency PWM buck regulator IC that delivers a 1-A load current. The
regulator has a preset switching frequency of either 550 kHz (LM2734Y) or 1.6 MHz (LM2734X). These high
frequencies allow the LM2734 device to operate with small surface-mount capacitors and inductors, resulting in
DC-DC converters that require a minimum amount of board space. The LM2734 device is internally
compensated, so it is simple to use, and requires few external components. The LM2734 device uses currentmode control to regulate the output voltage.
The following operating description of the LM2734 device will refer to the Simplified Block Diagram () and to the
waveforms in Figure 12. The LM2734 device supplies a regulated output voltage by switching the internal NMOS
control switch at constant frequency and variable duty cycle. A switching cycle begins at the falling edge of the
reset pulse generated by the internal oscillator. When this pulse goes low, the output control logic turns on the
internal NMOS control switch. During this on-time, the SW pin voltage (VSW) swings up to approximately VIN, and
the inductor current (IL) increases with a linear slope. ILis measured by the current-sense amplifier, which
generates an output proportional to the switch current. The sense signal is summed with the regulator’s
corrective ramp and compared to the error amplifier’s output, which is proportional to the difference between the
feedback voltage and V
next switching cycle begins. During the switch off-time, inductor current discharges through Schottky diode D1,
which forces the SW pin to swing below ground by the forward voltage (VD) of the catch diode. The regulator
loop adjusts the duty cycle (D) to maintain a constant output voltage.
. When the PWM comparator output goes high, the output switch turns off until the
REF
Figure 12. LM2734 Waveforms of SW Pin Voltage and Inductor Current
The overvoltage comparator compares the FB pin voltage to a voltage that is 10% higher than the internal
reference Vref. Once the FB pin voltage goes 10% above the internal reference, the internal NMOS control
switch is turned off, which allows the output voltage to decrease toward regulation.
7.3.2 Undervoltage Lockout
Undervoltage lockout (UVLO) prevents the LM2734 from operating until the input voltage exceeds 2.74 V
(typical).
The UVLO threshold has approximately 440 mV of hysteresis, so the part will operate until VINdrops below 2.3 V
(typical). Hysteresis prevents the part from turning off during power up if VINis nonmonotonic.
7.3.3 Current Limit
The LM2734 device uses cycle-by-cycle current limiting to protect the output switch. During each switching cycle,
a current limit comparator detects if the output switch current exceeds 1.7 A (typical), and turns off the switch
until the next switching cycle begins.
7.3.4 Thermal Shutdown
Thermal shutdown limits total power dissipation by turning off the output switch when the IC junction temperature
exceeds 165°C. After thermal shutdown occurs, the output switch does not turn on until the junction temperature
drops to approximately 150°C.
The LM2734 device has a shutdown mode that is controlled by the enable pin (EN). When a logic low voltage is
applied to EN, the part is in shutdown mode and its quiescent current drops to typically 30 nA. Switch leakage
adds another 40 nA from the input supply. The voltage at this pin should never exceed VIN+ 0.3 V.
7.4.2 Soft-Start
This function forces V
reference voltage ramps from 0 V to its nominal value of 0.8 V in approximately 200 µs. This forces the regulator
output to ramp up in a more linear and controlled fashion, which helps reduce inrush current. Under some
circumstances at start-up, an output voltage overshoot may still be observed. This may be due to a large output
load applied during start up. Large amounts of output external capacitance can also increase output voltage
overshoot. A simple solution is to add a feed forward capacitor with a value between 470 pf and 1000 pf across
the top feedback resistor (R1). See Figure 23 for further detail.
to increase at a controlled rate during start up. During soft-start, the error amplifier’s
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1Application Information
8.1.1 Boost Function
Capacitor C
drive voltage to the internal NMOS control switch. To properly drive the internal NMOS switch during its on-time,
V
needs to be at least 1.6 V greater than VSW. Although the LM2734 device will operate with this minimum
BOOST
voltage, it may not have sufficient gate drive to supply large values of output current. Therefore, it is
recommended that V
the maximum operating limit of 5.5 V.
5.5 V > V
BOOST
and diode D2 in Figure 13 are used to generate a voltage V
BOOST
be greater than 2.5 V above VSWfor best efficiency. V
BOOST
– VSW> 2.5 V for best performance.
BOOST
BOOST
. V
- VSWis the gate
BOOST
– VSWshould not exceed
Figure 13. V
Charges C
OUT
BOOST
When the LM2734 device starts up, internal circuitry from the BOOST pin supplies a maximum of 20 mA to
C
source current to C
There are various methods to derive V
. This current charges C
BOOST
to a voltage sufficient to turn the switch on. The BOOST pin will continue to
BOOST
until the voltage at the feedback pin is greater than 0.76 V.
BOOST
:
BOOST
1. From the input voltage (VIN)
2. From the output voltage (V
3. From an external distributed voltage rail (V
OUT
)
)
EXT
4. From a shunt or series Zener diode
In the simplified block diagram of Functional Block Diagram, capacitor C
drive current for the NMOS switch. Capacitor C
cycle, when the internal NMOS control switch is off (T
forward voltage of D2 (V
(V
). Therefore the voltage stored across C
FD1
V
- VSW= VIN- V
BOOST
), during which the current in the inductor (L) forward biases the Schottky diode D1
FD2
BOOST
+ V
FD2
FD1
is charged via diode D2 by VIN. During a normal switching
BOOST
) (refer to Figure 12), V
OFF
is:
and diode D2 supply the gate-
BOOST
equals VINminus the
BOOST
(1)
When the NMOS switch turns on (TON), the switch pin rises to:
for many applications. Thus the gate-drive voltage of the NMOS switch is approximately:
VIN- 0.2 V(5)
An alternate method for charging C
voltage should be from 2.5 V and 5.5 V, so that proper gate voltage will be applied to the internal switch. In this
circuit, C
provides a gate drive voltage that is slightly less than V
BOOST
In applications where both VINand V
directly from these voltages. If VINto V
a Zener voltage by placing a Zener diode D3 in series with D2, as shown in Figure 14. When using a series
Zener diode from the input, ensure that the regulation of the input supply does not create a voltage that falls
outside the recommended V
(V
(V
– VD3) < 5.5 V(6)
INMAX
– VD3) > 1.6 V(7)
INMIN
BOOST
voltage.
is to connect D2 to the output as shown in Figure 13. The output
BOOST
.
OUT
are greater than 5.5 V, or less than 3 V, C
OUT
are greater than 5.5 V, C
OUT
can be charged from VINor V
BOOST
cannot be charged
BOOST
OUT
minus
Figure 14. Zener Reduces Boost Voltage from V
IN
An alternative method is to place the Zener diode D3 in a shunt configuration as shown in Figure 15. A small 350
mW to 500 mW 5.1-V Zener diode in a SOT or SOD package can be used for this purpose. A small ceramic
capacitor such as a 6.3 V, 0.1-µF capacitor (C4) should be placed in parallel with the Zener diode. When the
internal NMOS switch turns on, a pulse of current is drawn to charge the internal NMOS gate capacitance. The
0.1-µF parallel shunt capacitor ensures that the V
voltage is maintained during this time.
BOOST
Resistor R3 should be chosen to provide enough RMS current to the Zener diode (D3) and to the BOOST pin. A
recommended choice for the Zener current (I
) is 1 mA. The current I
ZENER
into the BOOST pin supplies the
BOOST
gate current of the NMOS control switch and varies typically according to the following formula for the X version:
I
= 0.56 × (D + 0.54) × (V
BOOST
I
can be calculated for the Y version using the following:
BOOST
I
= 0.22 × (D + 0.54) × (V
BOOST
where D is the duty cycle, V
ZENER
– VD2) mA(8)
ZENER
- VD2) µA(9)
ZENER
and VD2are in volts, and I
is in milliamps. V
BOOST
is the voltage applied to
ZENER
the anode of the boost diode (D2), and VD2is the average forward voltage across D2. Note that this formula for
I
gives typical current. For the worst case I
BOOST
, increase the current by 40%. In that case, the worst case
BOOST
boost current will be:
I
BOOST-MAX
= 1.4 × I
BOOST
(10)
R3 will then be given by:
R3 = (VIN- V
For example, using the X-version let VIN= 10 V, V
ZENER
) / (1.4 × I
BOOST
+ I
)(11)
ZENER
= 5 V, VD2= 0.7 V, I
ZENER
= 1 mA, and duty cycle D =
ZENER
50%. Then:
I
= 0.56 × (0.5 + 0.54) × (5 - 0.7) mA = 2.5 mA(12)
BOOST
R3 = (10 V - 5 V) / (1.4 × 2.5 mA + 1 mA) = 1.11 kΩ(13)