TEXAS INSTRUMENTS CY74FCT240T Technical data

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CY54/74FCT240T

CY54/74FCT244T

SCCS017 - May 1994 - Revised February 2000

Features

• Function, pinout, and drive compatible with FCT and

F logic

• FCT-D speed at 3.6 ns max. (Com’l FCT244 only),

FCT-C speed at 4.1 ns max. (Com’l),
FCT-A speed at 4.8 ns max. (Com’l)

• Reduced V

FCT functions

(typically = 3.3V) versions of equivalent

OH

• Edge-rate control circuitry for significantly improved

noise characteristics

• Power-off disable feature

• ESD > 2000V

• Matched rise and fall times

• Fully compatible with TTL input and output logic levels

• Extended commercial range of −40˚C to +85˚C

Logic Block Diagram

FCT240T

OE

A

OE

B

DA

OB

DA

OB

DA

OB

DA

OB

0

0

1

1

2

2

3

3

OA

0

DB

0

OA

1

DB

1

OA

2

DB

2

OA

3

DB

3

FCT240T–1

8-Bit Buffers/Line Drivers

• Sink current 64 mA (Com’l), 48 mA (Mil)
Source current 32 mA (Com’l), 12 mA (Mil)

Functional Description

The FCT240T and FCT244T are octal buffers and line drivers
designed to be employed as memory address drivers, clock
drivers, and bus-oriented transmitters/receivers. The devices
provide speed and drive capabilities equivalent to their fastest
bipolar logic counterparts while reducing power consumption. The
input and output v oltage levels allow direct interface with TTL,
NMOS, and CMOS devices without e xternal components.

The outputs are designed with a power-off disable feature to
allow for live insertion of boards.

FCT244T

OE

A

OE

B

DA

OB

DA

OB

DA

OB

DA

OB

0

0

1

1

2

2

3

3

OA

0

DB

0

OA

1

DB

1

OA

2

DB

2

OA

3

DB

3

FCT240T–4

Pin Configurations

LCC

Top View

1

2

OB

GND

DB

OA

DB

3

DA

8

3

9
10

FCT240T

11

3

12

3

13

2

1516 17 18

14

2

OA

DA

OB2OB

765

1

1

DB

OA

4

0

DB

1

DA

3
2

1
20
19

0

OA

FCT240T–2

DA

OB

OE
V
OE

DIP/SOIC/QSOP

Top View

1

OE

A

2

DA

0

3

OB

0

4

DA

0

0

A

CC

B

OB

DA
OB
DA
OB

GND

1

5

FCT240T

1

6

2

7

2

8

3

9

3

10

20
19
18
17
16
15
14
13
12
11

V

CC

OE

B

OA

0

DB

0

OA

1

DB

1

OA

2

DB

2

OA

3

DB

3

FCT240T–3

OB

GND

DB

OA

DB

3

3

3

2

9
10
11
12
13

14

LCC

Top View

2

3

DA

DA

OB2OB

765

8

FCT244T

1516 17 18

2

1

1

OA

DB

OA

1

1

DA

4

OB

0

3

DA

0

2

OE

A

1

V

CC

20

OE

19

B

0

0

DB

OA

FCT240T–5 FCT240T–6

DIP/SOIC/QSOP

Top View

1

OE

A

2

DA

0

3

OB

0

4

DA

1

5

FCT244T

OB

1

6

DA

2

7

OB

2

8

DA

3

9

OB

3

10

GND

20

V

CC

19

OE

B

18

OA

0

17

DB

0

16

OA

1

15

DB

1

14

OA

2

13

DB

2

12

OA

3

11

DB

3

Copyright © 2000, Texas Instruments Incorporated

CY54/74FCT240T

CY54/74FCT244T

] ]

Function Table FCT240T

Inputs

A

L
L

H

Maximum Ratings

(Above which the useful life may be impaired. For user guide­lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied.............................................–65°C to +135°C

Supply Voltage to Ground Potential............... –0.5V to +7.0V

DC Input Voltage............................................–0.5V to +7.0V

DC Output Voltage......................................... –0.5V to +7.0V

DC Output Current (Maximum Sink Current/Pin).......120 mA

OE

B

L
L

H

[2, 3]

[1]

Function Table FCT244T

[1]

Inputs

D

L
H
X

OutputOE

H

L

Z

A

L
L

H

OE

B

L
L

H

D

L
H
X

OutputOE

L
H
Z

Power Dissipation..........................................................0.5W

Static Discharge Voltage............................................>2001V

(per MIL-STD-883, Method 3015)

Operating Range

Range Speed

Commercial DT 0°C to +70°C 5V ± 5%
Commercial T, AT, CT –40°C to +85°C 5V ± 5%

[4]

Military

All –55°C to +125°C 5V ± 10%

Ambient

Temperature V

CC

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions Min. Typ.

V

OH

Output HIGH Voltage VCC=Min., IOH=–32 mA Com’l 2.0 V

VCC=Min., IOH=–15 mA Com’l 2.4 3.3 V
VCC=Min., IOH=–12 mA Mil 2.4 3.3 V

V

OL

Output LOW Voltage VCC=Min., IOL=64 mA Com’l 0.3 0.55 V

VCC=Min., IOL=48mA Mil 0.3 0.55 V

V

IH

V

IL

V

H

V

IK

I

I

I

IH

I

IL

I

OZH

I

OZL

I

OS

I

OFF

Notes:

1. H = HIGH Voltage Level. L = LOW Voltage Level. X = Don’t Care.

2. Unless otherwise noted, these limits are over the operating free-air temperature range.

3. Unused inputs must always be connected to an appropriate logic voltage level, preferably either V

4. T

5. Typical values are at V

6. This parameter is specified but not tested.

7. Not more than one outputshouldbeshorted at a time. Duration ofshort should notexceed one second. The use ofhigh-speedtest apparatus and/or sample
and hold techniques are preferable in order to minimizeinternal chip heatingandmoreaccurately reflect operational values. Otherwise prolonged shorting of
a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parametric tests. In any sequence of parameter
tests, I

Input HIGH Voltage 2.0 V
Input LOW Voltage 0.8 V
Hysteresis

[6]

All inputs 0.2 V
Input Clamp Diode Voltage VCC=Min., IIN=–18 mA –0.7 –1.2 V
Input HIGH Current VCC=Max., VIN=V

CC

Input HIGH Current VCC=Max., VIN=2.7V ±1 µA
Input LOW Current VCC=Max., VIN=0.5V ±1 µA
Off State HIGH-Level Output

Current
Off State LOW-Level

Output Current
Output Short Circuit Current
Power-Off Disable VCC=0V, V

is the “instant on” case temperature.

A

tests should be performed last.

OS

=5.0V, TA=+25˚C ambient.

CC

VCC= Max., V

VCC = Max., V

[7]

VCC=Max., V

= 2.7V 10 µA

OUT

= 0.5V –10 µA

OUT

=0.0V –60 –120 –225 mA

OUT

=4.5V ±1 µA

OUT

or ground.

CC

[5]

Max. Unit

5 µA

2

CY54/74FCT240T

CY54/74FCT244T

]

Capacitance

Parameter Description Typ.

C

IN

C

OUT

Power Supply Characteristics

Parameter Description Test Conditions Typ.

I

CC

∆I

CC

I

CCD

I

C

Notes:

8. Per TTL driven input (V

9. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.

10. I

C

IC=ICC+∆ICCDHNT+I
I

CC

∆I

CC

D

H

N

T

I

CCD

f

0

f

1

N

1

All currents are in milliamps and all frequencies are in megahertz.

11. Values for these conditions are examples of the ICC formula. These limits are specified but not tested.

[6]

Input Capacitance 5 10 pF
Output Capacitance 9 12 pF

Quiescent Power Supply Current VCC=Max., VIN≤0.2V,

Quiescent Power Supply Current
(TTL inputs)

Dynamic Power Supply

[9]

Current

Total Power Supply Current

[10]

V
VCC=Max., VIN=3.4V,

f1=0, Outputs Open
VCC=Max., One Input Toggling,

50% Duty Cycle, Outputs Open,
V

VCC=Max., 50% Duty Cycle, Outputs Open,

–0.2V

IN≥VCC

≤0.2V or VIN≥VCC–0.2V

IN

One Bit Toggling at f
OE1=OE2=GND, VIN≤0.2V or VIN≥VCC–0.2V

VCC=Max., 50% Duty Cycle, Outputs Open,
One Bit Toggling at f
OE1=OE2=GND, VIN=3.4V or VIN=GND

VCC=Max., 50% Duty Cycle, Outputs Open,
Eight Bits Toggling at f
OE1=OE2=GND, VIN≤0.2V or VIN≥VCC–0.2V

VCC=Max., 50% Duty Cycle, Outputs Open,
Eight Bits Toggling at f
OE1=OE2=GND, VIN=3.4V or VIN=GND

=3.4V); all other inputs at VCC or GND.

IN

=I

QUIESCENT

= Quiescent Current with CMOS input levels
= Power Supply Current for a TTL HIGH input (VIN=3.4V)
= Duty Cycle for TTL inputs HIGH
= Number of TTL inputs at D
= Dynamic Current caused by an input transition pair (HLH or LHL)
= Clock frequency for registered devices, otherwise zero
= Input signal frequency
= Number of inputs changing at f

+ I

INPUTS

CCD(f0

+ I

DYNAMIC

/2 + f1N1)

H

1

[8]

=10 MHz,

1

=10 MHz,

1

=2.5 MHz,

1

=2.5 MHz,

1

[5]

OE1=OE2=GND,

Max. Unit

[5]

Max. Unit

0.1 0.2 mA

0.5 2.0 mA

0.06 0.12 mA/MHz

0.7 1.4 mA

1.0 2.4 mA

1.3 2.6

3.3 10.6

[11]

[11]

mA

mA

3