Texas Instruments bq25606, PWR772 User Manual

User's Guide

SLUUBL3A–June 2017–Revised October 2017

bq25606 PWR772 Evaluation Module

This user's guide provides detailed testing instructions for the bq25606 evaluation module (EVM). Also
included are descriptions of the necessary equipment, equipment setup, test procedures, the printed­circuit board layouts, schematics, and the bill of materials (BOM).

Throughout this user's guide, the abbreviations EVM, bq25606EVM, PWR772, and the term evaluation
module are synonymous with the bq25606 evaluation module, unless otherwise noted.

Contents

1 Introduction ................................................................................................................... 2

1.1 EVM Features....................................................................................................... 2

1.2 I/O Descriptions ..................................................................................................... 2

2 Test Summary................................................................................................................ 3

2.1 Equipment ........................................................................................................... 3

2.2 Equipment Setup.................................................................................................... 3

2.3 Test Procedure...................................................................................................... 5

3 PCB Layout Guideline....................................................................................................... 6

4 Board Layout ................................................................................................................. 7

5 Schematic..................................................................................................................... 9

6 Bill of Materials ............................................................................................................. 10

1 Original Test Setup for bq25606 EVM.................................................................................... 4

2 bq25606EVM Top Overlay ................................................................................................. 7

3 bq25606EVM Top Solder Mask............................................................................................ 7

4 bq25606EVM Top Layer ................................................................................................... 7

5 bq25606EVM Signal Layer 1 .............................................................................................. 7

6 bq25606EVM Signal Layer 2 .............................................................................................. 7

7 bq25606EVM Bottom Layer ............................................................................................... 7

8 bq25606EVM Bottom Solder Mask........................................................................................ 8

9 bq25606EVM Bottom Overlay ............................................................................................. 8

10 Schematic for bq25606EVM-772.......................................................................................... 9

1 Device Data Sheets ......................................................................................................... 2

2 EVM Connections............................................................................................................ 2

3 EVM Jumper Connections and Shunt Installation....................................................................... 2

4 Recommended Operating Conditions..................................................................................... 3

5 bq25606EVM-772 BOM ................................................................................................... 10

Trademarks

All trademarks are the property of their respective owners.

List of Figures

List of Tables

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1

Introduction

1 Introduction

1.1 EVM Features

For detailed features and operation, refer to Table 1 for a list of devices and their data sheets.

Device Data Sheet EVM Label Variant

bq25606 SLUSCK6 BQ25606EVM-772 004

The bq25606 evaluation module (EVM) is a standalone charger module without I2C control.

1.2 I/O Descriptions

Table 2 lists the jumper connections available on this EVM.

Jack Description

J1-VAC Input positive terminal

J1-GND Ground Input: negative terminal (ground terminal)

J2-PMID PMID pin connection

J2-GND Ground

J4-SYS Connected to system

J4-GND Ground

J5-BATSNS_ICHG BATSNS or ICHG pin connection

J5-BAT Connected to battery pack positive node

J5-GND Ground

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Table 1. Device Data Sheets

Table 2. EVM Connections

J3 Output mini-USB port

J6 I2C 4-pin connector
J7 USB-TO-GPIO connector (Not populated)

Table 3 lists the EVM jumper connections.

Table 3. EVM Jumper Connections and Shunt Installation

Jack Description bq25606 Setting

JP1 PSEL pin selection Not installed
JP2 CE pin setting: pull low to enable the charge Installed
JP3 OTG pin setting: pull high to enable OTG mode Short OTG to GND
JP4 STAT, PG, CE, INT, and OTG pins pullup source (SYS or

JP5 TS pin to GND Not installed
JP6 TS resistor divider pullup source (REGN) connection Installed
JP7 Internal 10 kΩ to GND to TS pin Installed
JP8 BATSNS selection Not installed

JP9 QON and VSET pin setting Not installed
JP10 STAT pin setting Installed
JP11 Add SYS cap Not installed
JP12 SDA and PG pin setting Installed
JP13 D+ and PSEL to J3 Not Installed
JP14 D– and PG to J3 Not Installed
JP15 D– and PG pin setting Not installed
JP16 Add VBUS cap Not installed

2

bq25606 PWR772 Evaluation Module

BAT)

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Short to SYS

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Table 3. EVM Jumper Connections and Shunt Installation (continued)

Jack Description bq25606 Setting

JP17 Add PMID cap Not installed
JP18 Add AT cap Not installed

S1 QON control Default open
S2 Switch to short indicator LEDs Default open

Table 4 lists the recommended operating conditions for this EVM.

Symbol Description MIN TYP MAX Unit

Supply voltage, V
Battery voltage, V
I

BAT

Supply current, I

VBUS

BAT

IN

2 Test Summary

2.1 Equipment

This section includes a list of supplies required for testing this EVM.

1. Power supply: Power supply #1 (PS#1): a power supply capable of supplying 5 V at 3 A is required.
While this part can handle larger voltage and current, it is not necessary for this procedure.

2. Load #1:

• (4-quadrant supply, constant voltage < 4.5 V) A 0–20 V, 0–5 A, > 30-W system, DC electronic load

and setting as constant voltage load mode

or

• Kepco load: BOP 20–5M, DC 0 to ±20 V, 0 to ±5 A (or higher)

3. Load #2: Use with Boost Mode, VAC to GND load, 10 Ω, 5 W or greater.

4. Meters:

• Six Fluke 75 multimeters, (equivalent or better)

or

• Four equivalent voltage meters and two equivalent current meters. The current meters must be

capable of measuring 5-A+ current

Test Summary

Table 4. Recommended Operating Conditions

Input voltage from AC adapter 3.9 5.0 13.5 V
Voltage applied at V
Fast charging current 0 3.0 A
Discharging current through internal MOSFET 6.0 A
Maximum input current from AC adapter input 0 3.0 A

terminal 0 4.208 4.4 V

BAT

2.2 Equipment Setup

Use the following list to set up the equipment:

1. Set PS#1 for 5-V DC, 3-A current limit and then turn off the supply.

2. Connect the output of PS#1 in series with a current meter (multimeter) to J1 (VAC and GND). It is
recommended to connect one voltage meter across TP24 and TP27 to measure the input current
sensing resistor voltage. The sensing resistor is 10 mΩ.

3. Connect one voltage meter across TP21 (VAC) and TP18 (GND), connect another voltage meter
across TP1 (VBUS) and TP18 (GND).

4. Turn on Load #1, set to constant voltage mode and output to 2.5 V. Turn off (disable) load. Connect
load to J5 (BAT and GND).

5. Connect one voltage meter across TP9 (BAT) and TP17 (GND) to measure the battery voltage and
another voltage meter across TP28 and TP29 to measure the battery current sensing resistor voltage.
The sensing resistor is 10 mΩ. An alternate method is to use the optional current meter in series to
measure the battery current.

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Test Summary

6. Install shunts as shown in Table 3.

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Figure 1. Original Test Setup for bq25606 EVM

4

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2.3 Test Procedure

2.3.1 Charger Mode Verification

1. Enable Load #1 from Section 2.2, Step 4.

2. Measure the voltage across J4 and J5 as follows:

• Measure → V(TP8(SYS), TP17(GND)) = 3.65 V (typical)

• Measure → V(TP9(BAT), TP17(GND)) = 2.5 V (typical)

• Measure → IBAT ( = pre-charge current)

3. Change Load #1 to 3.7 V

• Measure → V(TP8(SYS), TP17(GND)) = 3.8 V (typical)

• Measure → V(TP9(BAT), TP17(GND)) = 3.7 V (typical)

• Measure → IBAT ( = fast charge current)

4. Adjust R10 to change charging current.

5. Adjust R11 to change input current limit.

6. Turn off and disconnect Load #1.

7. Turn off and disconnect PS#1.

2.3.2 Boost Mode Verification

1. Do not install JP3.

2. If the constant voltage load connected from BAT to GND is not a four-quadrant supply (sources
current), remove the load and use the power source disconnected in step 1, set to 3.7 V and 2-A
current limit and connect between BAT and GND.

3. Apply 10 Ω (5 W or greater) across J1 VAC(+) to GND(–).

4. Verify V
Measure → V

5. Turn off and disconnect power supply.

6. Remove 10-Ω resistor at VAC.

to GND since VBUS is the actual boost mode output voltage.

VBUS

= 5.15 V (Typical)

VBUS

Test Summary

2.3.3 Helpful Tips

• The leads and cables to the various power supplies, batteries, and loads have resistance. The current
meters also have series resistance. The charger dynamically reduces charge current depending on the
voltage sensed at its VBUS pin (using the VINDPM feature), BAT pin (as part of normal termination),
and TS pin (through its battery temperature monitoring feature via battery thermistor). Therefore,
voltmeters must be used to measure the voltage as close to the IC pins as possible instead of relying
on the digital readouts of the power supply. If a battery thermistor is not available, make sure shunts
JP6 and JP7 are in place.

• When using a source meter that can source and sink current as your battery simulator, TI highly
recommends adding a large (1000+ μF) capacitor at the EVM BAT and GND connectors in order to
prevent oscillations at the BAT pin due to mismatched impedances of the charger output and source
meter input within their respective regulation loop bandwidths. Configuring the source meter for 4-wire
sensing eliminates the need for a separate voltmeter to measure the voltage at the BAT pin.
When using 4-wire sensing, always ensure that the sensing leads are connected in order to prevent
accidental overvoltage by the power leads.

• For precise measurements of charge current and battery regulation near termination, the current meter
in series with the battery or battery simulator should not be set to auto-range and may need be
removed entirely. An alternate method for measuring charge current is to either use an oscilloscope
with Hall effect current probe or place a 1% or better, thermally capable (for example, 0.010 Ω in 1210
or larger footprint) resistor in series between the BAT pin and battery and measure the voltage across
that resistor. The bq25606EVM has the sensing resistors onboard.

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PCB Layout Guideline

3 PCB Layout Guideline

Minimize the switching node rise and fall times for minimum switching loss. Proper layout of the
components minimizing high-frequency current path loop is important to prevent electrical and magnetic
field radiation and high-frequency resonant problems. This PCB layout priority list must be followed in the
order presented for proper layout:

1. Place the input capacitor as close as possible to the PMID pin and GND pin connections and use the
shortest copper trace connection or GND plane.

2. Place the inductor input terminal as close to the SW pin as possible. Minimize the copper area of this
trace to lower electrical and magnetic field radiation but make the trace wide enough to carry the
charging current. Do not use multiple layers in parallel for this connection. Minimize parasitic
capacitance from this area to any other trace or plane.

3. Put an output capacitor near to the inductor and the IC. Tie ground connections to the IC ground with a
short copper trace connection or GND plane.

4. Route analog ground separately from the power ground. Connect analog ground and connect power
ground separately. Connect analog ground and power ground together using a power pad as the
single ground connection point or use a 0-Ω resistor to tie analog ground to power ground.

5. Use a single ground connection to tie the charger power ground to the charger analog ground just
beneath the IC. Use ground copper pour but avoid power pins to reduce inductive and capacitive noise
coupling.

6. Place decoupling capacitors next to the IC pins and make the trace connection as short as possible.

7. It is critical that the exposed power pad on the backside of the IC package be soldered to the PCB
ground. Ensure that there are sufficient thermal vias directly under the IC connecting to the ground
plane on the other layers.

8. The via size and number should be enough for a given current path.

See the EVM design for the recommended component placement with trace and via locations. For the
QFN information, see Quad Flatpack No-Lead Logic Packages and QFN/SON PCB Attachment.

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4 Board Layout

Figure 2 through Figure 9 show the EVM PCB layout images.

Board Layout

Figure 2. bq25606EVM Top Overlay Figure 3. bq25606EVM Top Solder Mask

Figure 4. bq25606EVM Top Layer Figure 5. bq25606EVM Signal Layer 1

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Board Layout

Figure 6. bq25606EVM Signal Layer 2 Figure 7. bq25606EVM Bottom Layer

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Figure 8. bq25606EVM Bottom Solder Mask Figure 9. bq25606EVM Bottom Overlay

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1 2

3 4

5 6

7 8

9 10

J7

DNP

0

R21

DNP

200

R19

DNP

200

R20

DNP

SDA_/PG

SCL_OTG

PGND

VBUS

1

D-

2

D+

3

ID

4

GND

5

678

11

10

9

J3

VAC

PGND

PGND

4

1

2

3

J6

PGND

SCL_OTG

SDA_/PG

/CE

D+_PSEL

PGND

VAC

GND

PMID
GND

Vbus: 3.9V to 14V

1000pF

C2

DNP

2.21kR4

10.0k

R5

DNP

JP3

/CE

AGND

AGND

TP2TP1

1µF

C1

TP3 TP4 TP7

13V

D1

DNP

2.21k

R17

30.1k

R23

10

R26

DNP

0.1µF

C11

DNP

System

GND

GND

PGND

Battery

PGND

PULL-UP

TS

GND

10µF

C9

10µF

C10

10µF

C19

DNP

20V

D3

DNP

ICHG: 0 ~ 2.5A

40V

D2

DNP

0.047µF

C7

0

R25

1
2
3

J5

TP6

BATSNS_ICHG

PGND

1µH

L1

DNP

4.7k

R15

DNP

AGND

S1

DNP

STAT_/IMON

REGN

CSD17571Q2

3

5,6,8 4,7

1,2,

Q1

DNP

0

R2

DNP

PGND

JP16

DNP

JP17

DNP

PGND

PGND

1µF

C18

DNP

SCL_OTG

SDA_/PG

VBUS PMID

VAC

VAC

SDA_/PG

D+_PSEL

D-_/PG

10k ohm

R10

PGND

/CE

10K

TS

20V

D6

DNP

J2

1

2

3

JP1

AGND

10.0k

R6

REGN

D+_PSEL

JP2

/CE

AGND

PMID

10µF

C3

DNP

10µF

C17

DNP

10µF

C4

1000pF

C5

DNP

4.7µF

C6

AGND

PMID

/QON_VSET

/QON_VSET

JP5

10.0k

R24

5.23k

R22

JP6

REGN

JP7

REGN

110pF

C8

DNP

INT_ILIM

AGND

1

234

5

SW1

DNP

PGND

1

2

3

JP4

PULL-UP

JP18

DNP

JP11

DNP

1000pF

C12

DNP

10µF

C13

4.7µF

C20

DNP

4.7µF

C14

DNP

NT1

Net-Tie

0

R16

DNP

Green

D4

REGN
RTOP TS

PSEL
GND

REGN

/CE

GND

GND

OTG

TP9

TP8

SYS

BAT

BAT

SYS

TP5

REGN BATSNS_ICHG INT_ILIMSCL_OTG

TP10 TP11

TS

TS

TP12

DNP

TP13

D-_/PG

TP14 TP15

/QON_VSETD+_PSEL

TP16

/CE

TP17 TP18 TP19 TP20

AGND

PGND

BAT

SYS

PULLUP

AGND

10k ohm

R11

PULL-UP

1

234

5

SW3

DNP

1

234

5

SW4

DNP

1

234

5

SW2

DNP

BAT

SYS

SW

PMID

JP13

SCL_OTG

1

2

3

JP9

AGND

/QON_VSET

1µF

C15

0.1µF

C16

AGND

0.005

R1

STAT_/IMON

STAT_/IMON

BATSNS_ICHG

BTST

JP10

2.21k

R7

Green

D5

JP12

SDA_/PG

TP21

VAC

0

R27

D-_/PG

10.0k

R29

PGND

D-_/PG

VBUS

AGND

JP14

JP15

DNP

10.0k

R13

DNP

PULL-UP

1

2

4

3

S2

10.0k

R14

TP22 TP23

0.01

R31

158

R12

1.00k

R3

221

R8

2.80k

R9

1
2
3

JP8

DNP

BATSNS_ICHG

BAT

BATCON

0.01

R30

40V

D7

DNP

TP24

0.01

R18

TP27

TP25 TP26

TP28

TP29

J1

J4

1µH

L2

NC

2

BAT

13

BAT

14

ICHG

10

BTST

21

PAD

25

GND

17

GND

18

PMID

23

D+

3

REGN

22

OTG

6

PG

7

STAT

5

SW

19

SW

20

SYS

15

SYS

16

TS

11

VBUS

24

VAC

1

CE

9

ILIM

8

D-

4

VSET

12

U1

BQ25606RGER

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Schematic

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Figure 10 shows the schematic for the bq25606 EVM.

Figure 10. Schematic for bq25606EVM-772

Bill of Materials

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6 Bill of Materials

Table 5 lists the bq25606EVM-772 BOM.

Table 5. bq25606EVM-772 BOM

Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part

Number

Alternate
Manufacturer

!PCB 1 Printed circuit board PWR772 Any
C1 1 1 µF Capacitor, ceramic, 1 µF, 35 V, ± 10%, X5R, 0603 0603 GMK107BJ105KA-T Taiyo Yuden
C4 1 10 µF Capacitor, ceramic, 10 µF, 25 V, ± 10%, X7S, 0805 0805 GRM21BC71E106KE11L Murata
C6 1 4.7 µF Capacitor, ceramic, 4.7 µF, 16 V, ± 10%, X5R, 0603 0603 GRM188R61C475KAAJ Murata
C7 1 0.047µFCapacitor, ceramic, 0.047 µF, 25 V, ± 10%, X7R, 0402 0402 GRM155R71E473KA88D Murata

C9, C10, C13 3 10 µF Capacitor, ceramic, 10 µF, 10 V, ± 10%, X7R, 0805 0805 GRM21BR71A106KE51L Murata
C15 1 1µF Capacitor, ceramic, 1 µF, 25 V, ± 10%, X7R, 0805 0805 GRM219R71E105KA88D Murata
C16 1 0.1 µF Capacitor, ceramic, 0.1 µF, 25 V, ± 10%, X7R, 0402 0402 GRM155R71E104KE14D Murata
D4, D5 2 Green LED, Green, SMD 1.6 × 0.8 × 0.8 mm LTST-C190GKT Lite-On
J1, J2, J4 3 Connector Terminal Block, 2 POS, 3.81 mm, TH 2 POS Terminal Block 1727010 Phoenix Contact
J3 1 Connector, Receptacle, Micro-USB Type B, R/A, Bottom Mount

SMT

7.5 × 2.45 × 5 mm 0473460001 Molex

J5 1 Terminal Block Receptacle, 3 × 1, 3.81 mm, R/A, TH Term Block, 3 pos 1727023 Phoenix Contact
J6 1 Header (friction lock), 100 mil, 4x1, R/A, TH 4× 1 R/A Header 22-05-3041 Molex
JP1, JP4, JP9 3 Header,100 mil, 3 × 1, Tin, TH Header, 3 PIN, 100 mil, Tin PEC03SAAN Sullins Connector

Solutions

JP2, JP3, JP5, JP6, JP7,
JP10, JP12, JP13, JP14

9 Header, 100 mil, 2 × 1, Tin, TH Header,2 PIN, 100 mil, Tin PEC02SAAN Sullins Connector

Solutions
L2 1 1 µH Inductor, 1 µH, 3.2 A, 0.028 Ω, SMD 2.5 × 2 mm MPIM252010F1R0M-LF Microgate
LBL1 1 Thermal Transfer Printable Labels, 0.650" W × 0.200" H - 10,000

per roll

PCB Label 0.650" H × 0.200"WTHT-14-423-10 Brady

R1 1 0.005 Resistor, 0.005, 1%, 0.25 W, AEC-Q200 Grade 1, 0603 0603 ERJ3LWFR005V Panasonic
R3 1 1.00 k Resistor, 1.00 k, 1%, 0.063 W, 0402 0402 CRCW04021K00FKED Vishay-Dale
R4, R7, R17 3 2.21 k Resistor, 2.21 k, 1%, 0.063 W, 0402 0402 CRCW04022K21FKED Vishay-Dale
R6, R14, R24, R29 4 10.0 k Resistor, 10.0 k, 1%, 0.063 W, 0402 0402 CRCW040210K0FKED Vishay-Dale
R8 1 221 Resistor, 221, 1%, 0.063 W, 0402 0402 CRCW0402221RFKED Vishay-Dale
R9 1 2.80 k Resistor, 2.80 k, 1%, 0.063 W, 0402 0402 CRCW04022K80FKED Vishay-Dale
R10, R11 2 10 kΩ Trimmer, 10 kΩ, 0.25W, TH 4.5 × 8 × 6.7 mm 3266W-1-103LF Bourns
R12 1 158 Resistor, 158, 1%, 0.063 W, 0402 0402 CRCW0402158RFKED Vishay-Dale
R18, R30, R31 3 0.01 Resistor, 0.01, 1%, 1 W, 2010 2010 WSL2010R0100FEA18 Vishay-Dale
R22 1 5.23 k Resistor, 5.23 k, 1%, 0.063 W, 0402 0402 CRCW04025K23FKED Vishay-Dale
R23 1 30.1 k Resistor, 30.1 k, 1%, 0.063 W, 0402 0402 CRCW040230K1FKED Vishay-Dale
R25, R27 2 0 Resistor, 0, 5%, 0.063 W, 0402 0402 CRCW04020000Z0ED Vishay-Dale
S2 1 Switch, SPST, 2 POS, 25 mA, 24 VDC, SMD 3.71 × 5.8 mm 218-2LPST CTS Electrocomponents
SH-JP2, SH-JP3, SH-

JP4, SH-JP6, SH-JP7,
SH-JP10, SH-JP12, SH­JP13, SH-JP14

9 1 × 2 Shunt, 100 mil, Gold plated, Black Shunt 969102-0000-DA 3M SNT-100-BK-G Samtec

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Bill of Materials

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Table 5. bq25606EVM-772 BOM (continued)

Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part

Number

Alternate
Manufacturer

TP1, TP2 2 Test Point, Miniature, Red, TH Red Miniature Testpoint 5000 Keystone
TP3, TP4, TP6, TP7,

TP10, TP11, TP13, TP14,
TP15, TP16, TP21, TP24,
TP25, TP26, TP27, TP28,
TP29

17 Test Point, Miniature, White, TH White Miniature Testpoint 5002 Keystone

TP5, TP8 2 Test Point, Miniature, Orange, TH Orange Miniature Testpoint 5003 Keystone
TP9 1 Test Point, Miniature, Yellow, TH Yellow Miniature Testpoint 5004 Keystone
TP17, TP18, TP19, TP20,

TP22, TP23

6 Test Point, Compact, SMT Testpoint_Keystone_Compact 5016 Keystone

U1 1 BQ25606RGER, RGE0024H (VQFN-24) RGE0024H bq25606RGER Texas Instruments bq25606RGET Texas Instruments
C2, C5, C12 0 1000pFCapacitor, ceramic, 1000 pF, 50 V, ± 5%, C0G/NP0, 0402 0402 GRM1555C1H102JA01D Murata

C3, C17 0 10 µF Capacitor, ceramic, 10 µF, 25 V, ± 10%, X5R, 0805 0805 GRM21BR61E106KA73L Murata
C8 0 110 pF Capacitor, ceramic, 110 pF, 25 V, ± 5%, C0G/NP0, 0402 0402 GRM1555C1E111JA01D Murata
C11 0 0.1 µF Capacitor, ceramic, 0.1 µF, 25 V, ± 20%, X7R, 0402 0402 C1005X7R1E104M050BB TDK
C14, C20 0 4.7 µF Capacitor, ceramic, 4.7 µF, 16 V, ± 10%, X5R, 0603 0603 GRM188R61C475KAAJ Murata
C18 0 1 µF Capacitor, ceramic, 1 µF, 35 V, ± 10%, X5R, 0603 0603 GMK107BJ105KA-T Taiyo Yuden
C19 0 10 µF Capacitor, ceramic, 10 µF, 10 V, ± 10%, X7R, 0805 0805 GRM21BR71A106KE51L Murata
D1 0 13 V Diode, TVS, Uni, 13 V, W, SOD-123W SOD-123W PTVS13VS1UR,115 NXP Semiconductor
D2, D7 0 40 V Diode, Schottky, 40 V, 0.38 A, SOD-523 SOD-523 ZLLS350TA Diodes Inc.
D3, D6 0 20 V Diode, Schottky, 20 V, 1 A, 152AD 152AD NSR10F20NXT5G ON Semiconductor
FID1, FID2, FID3, FID4,

FID5, FID6

0 Fiducial mark. There is nothing to buy or mount. N/A N/A N/A

H1, H2, H3, H4 0 Machine Screw, Round, #4 - 40 × 1/4, Nylon, Philips panhead Screw NY PMS 440 0025 PH BampersandF Fastener

Supply

- -

H5, H6, H7, H8 0 Standoff, Hex, 0.5"L #4-40 Nylon Standoff 1902C Keystone - ­J7 0 Header (shrouded), 100 mil, 5x2, High-Temperature, Gold, TH 5 × 2 Shrouded header N2510-6002-RB 3M
JP8 0 Header, 100 mil, 3 × 1, Tin, TH Header,3 PIN, 100 mil, Tin PEC03SAAN Sullins Connector

Solutions
JP11, JP15, JP16, JP17,

JP18

0 Header, 100 mil, 2 × 1, Tin, TH Header,2 PIN, 100 mil, Tin PEC02SAAN Sullins Connector

Solutions
L1 0 1 uH Inductor, Wirewound, 1 µH, 4 A, 0.041 Ω, SMD 4.06 × 4.06 mm 74437321010 Wurth Elektronik
Q1 0 30 V MOSFET, N-CH, 30 V, 22 A, DQK0006C (WSON-6) DQK0006C CSD17571Q2 Texas Instruments
R2, R16, R21 0 0 Resistor, 0, 5%, 0.063 W, 0402 0402 CRCW04020000Z0ED Vishay-Dale
R5, R13 0 10.0 k Resistor, 10.0 k, 1%, 0.063 W, 0402 0402 CRCW040210K0FKED Vishay-Dale
R15 0 4.7 k Resistor, 4.7 k, 5%, 0.063 W, 0402 0402 CRCW04024K70JNED Vishay-Dale
R19, R20 0 200 Resistor, 200, 1%, 0.063 W, 0402 0402 CRCW0402200RFKED Vishay-Dale
R26 0 10 Resistor, 10, 5%, 0.063 W, 0402 0402 CRCW040210R0JNED Vishay-Dale
S1 0 Switch, Normally open, 2.3-N force, 200-k operations, SMD KSR KSR221GLFS CampersandK

Components

Bill of Materials

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12

SLUUBL3A–June 2017 –Revised October 2017

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bq25606 PWR772 Evaluation Module

Table 5. bq25606EVM-772 BOM (continued)

Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part

Number

Alternate
Manufacturer

SH-JP1, SH-JP5, SH­JP8, SH-JP9, SH-JP11,
SH-JP15, SH-JP16, SH­JP17, SH-JP18

0 1 × 2 Shunt, 100-mil, Gold plated, Black Shunt 969102-0000-DA 3M SNT-100-BK-G Samtec

SW1, SW2, SW3, SW4 0 Compact Probe Tip Circuit Board Test Points, TH, 25 per TH Scope Probe 131-5031-00 Tektronix
TP12 0 Test Point, Miniature, White, TH White Miniature Testpoint 5002 Keystone

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Revision History

Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from June 2, 2017 to September 30, 2017 ....................................................................................................... Page

• Changed Schematic for bq25606EVM-772............................................................................................ 9

• Changed bq25606EVM-772 BOM..................................................................................................... 10

SLUUBL3A–June 2017–Revised October 2017

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