TEXAS INSTRUMENTS bq24610, bq24617 Technical data

OAS

(bq24610)

OFB

(bq24617)

QFN-24

TOP VIEW

24 23 22 21 20 19

7 8 9 10 11 12

ACN

ACP

ACDRV

STAT1

SRN

SRP

ISET2

ACSET

GND

REGN

TTC

STAT2

VREF

ISET1

VFB

VCC

BATDRV

BTST

HIDRV

LODRV

bq24610 bq24617

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SLUS892 –DECEMBER 2009

Stand-Alone Synchronous Switch-Mode Li-Ion or Li-Polymer Battery Charger with System

FEATURES

Power Selector and Low I

Check for Samples: bq24610, bq24617

• 24-pin, 4×4-mm2QFN package

• 600 kHz NMOS-NMOS Synchronous Buck • Energy Star Low Quiescent Current I Converter

• Stand-alone Charger Support for Li-Ion or

– < 15 µA Off-State Battery Discharge current – < 1.5 mA Off-State Input Quiescent Current

Li-Polymer

• 5V–28V VCC Input Operating Range and APPLICATIONS Support 1-6 Battery Cells (bq24610)

• 5V–24V VCC Input Operating Range and Support 1-5 Battery Cells (bq24617)

• Up to 10A Charge Current and Adapter Current

• High-Accuracy Voltage and Current Regulation – ±0.5% Charge Voltage Accuracy – ±3% Charge Current Accuracy

• Netbook, Mobile Internet Device and Ultra-Mobile PC

• Personal Digital Assistants

• Handheld Terminals

• Industrial and Medical Equipment

• Portable Equipment

DESCRIPTION

– ±3% Adapter Current Accuracy

• Integration – Automatic System Power Selection from

Adapter or Battery – Internal Loop Compensation – Internal Soft Start – Dynamic Power Management

• Safety Protection – Input Over-Voltage Protection – Battery Thermistor Sense Hot/Cold Charge

Suspend – Battery Detection – Reverse Protection Input FET – Programmable Safety Timer – Charge Over-Current Protection – Battery Short Protection

The bq24610/7 is highly integrated Li-ion or Li-polymer switch-mode battery charge controller. It offers a constant-frequency synchronous switching PWM controller with high accuracy charge current and voltage regulation, charge preconditioning, termination, adapter current regulation and charge status monitoring.

The bq24610/7 charges the battery in three phases: preconditioning, constant current, and constant voltage. Charge is terminated when the current reaches a minimum user-selectable level. A programmable charge timer provides a safety backup. The bq24610/7 automatically restarts the charge cycle if the battery voltage falls below an internal threshold, and enters a low-quiescent current sleep mode when the input voltage falls below the battery voltage.

PACKAGE AND PIN-OUT

– Battery Over-Voltage Protection – Thermal Shutdown

• Status Outputs – Adapter Present – Charger Operation Status

• Charge Enable Pin

• 6V Gate Drive for Synchronous Buck Converter

• 30ns Driver Dead-time and 99.5% Max Effective Duty Cycle

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

RAC

0.010 W

Q1 (ACFET)

ACN

ACP

ISET2

ACSET

VREF

VFB

VCC

HIDRV

BTST

REGN

LODRV

GND

SRP

SRN

PACK+

PACK-

SYSTEM

ADAPTER+

ADAPTER-

0.1 µF

C3 C7

6.8µH*

BAT54

C10

0.1

µF

TTC

CTTC

VREF

STAT2

Pack

Thermistor

Sense

BATDRV

ACDRV

bq24610 bq24617

Q2 (ACFET)

Q3 (BATFET)

VREF

ISET1

STAT1

VBAT

9.31kW

R10

430kW

100

ADAPTER +

Cff 22 pF

0.1 µF

1µF

10 µF

1 µF

RSR

0.010

C11

0.1

µF

C12

10 µF*

C13

10 µF*

500 kΩ

R1210kW

R1110

R1310kW

100 kW

32.4 kW

100 kW

10kW

100 kW

22.1 kW

R14

100 kW

C14

0.1 mF

R15

100

C15

0.1

µF

PwrPad

0.056 Fμ

R16 100

0.1 Fμ

103AT

SI7617DN

SI7616DN

SIS412DN

SI7617DN

10 μF

R17 10Ω

R20

2Ω

C16

2.2μF

R18 1kΩ

R19 1kΩ

bq24610 bq24617

SLUS892 –DECEMBER 2009

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

DESCRIPTION (CONTINUED)

The bq24610/7 controls external switches to prevent battery discharge back to the input, connect the adapter to the system, and to connect the battery to the system using 6-V gate drives for better system efficiency. The bq24610/7 features Dynamic Power Management (DPM). These features reduce battery charge current when the input power limit is reached to avoid overloading the AC adapter when supplying the load and the battery charger simultaneously. A highly-accurate current-sense amplifier enables precise measurement of input current from the AC adapter to monitor the overall system power.

TYPICAL APPLICATION

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VIN=19V, 3-cell, I

adapter_limit

PART NUMBER IC MARKING PACKAGE QUANTITY

bq24610 OAS

bq24617 OFB

=4A, I

=3A, I

charge

Figure 1. Typical System Schematic

ORDERING INFORMATION

= I

pre-charge

=0.3A, 5 hour saftey timer

term

24-PIN 4×4 mm2QFN

Product Folder Link(s): bq24610 bq24617

ODERING NUMBER

(Tape andReel)

bq24610RGER 3000 bq24610RGET 250 bq24617RGER 3000 bq24617RGET 250

bq24610 bq24617

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PACKAGE THERMAL DATA

PACKAGE θ

QFN – RGE

(1) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. This is

connected to the ground plane by a 2×2 via matrix. θJAhas 5% improvement by 3x3 via matrix.

(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

Web site at www.ti.com.

(1)(2)

4°C/W 43°C/W 2.3 W 0.023 W/°C

TA= 25°C DERATING FACTOR

POWER RATING ABOVE TA= 25°C

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)

VCC, ACP, ACN, SRP, SRN, BATDRV, ACDRV, CE, STAT1, STAT2, PG –0.3 to 33 V PH –2 to 36 V

Voltage range

Maximum difference ACP–ACN, SRP–SRN –0.5 to 0.5 V voltage

Junction temperature range –40 to 155 °C

Storage temperature range –55 to 155 °C

stg

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult Packaging

Section of the data book for thermal limitations and considerations of packages.

(3) Must have a series resistor between battery pack to VFB if Battery Pack voltage is expected to be greater than 16V. Usually the resistor

divider top resistor will take care of this.

VFB –0.3 to 16 V REGN, LODRV, ACSET, TS, TTC –0.3 to 7 V BTST, HIDRV with respect to GND –0.3 to 39 V VREF, ISET1, ISET2 –0.3 to 3.6 V

(1) (2) (3)

SLUS892 –DECEMBER 2009

VALUE UNIT

RECOMMENDED OPERATING CONDITIONS

VALUE UNIT

VCC, ACP, ACN, SRP, SRN, BATDRV, ACDRV, CE, STAT1, STAT2, PG –0.3 to 28 V PH –2 to 30 V VFB –0.3 to 14 V

Voltage range REGN, LODRV, ACSET, TS, TTC –0.3 to 6.5 V

BTST, HIDRV with respect to GND –0.3 to 34 V ISET1, ISET2 –0.3 to 3.3 V VREF 3.3 V

Maximum difference ACP–ACN, SRP–SRN –0.2 to 0.2 V voltage

Junction temperature range 0 to 125 °C

Storage temperature range –55 to 155 °C

stg

Product Folder Link(s): bq24610 bq24617

bq24610 bq24617

SLUS892 –DECEMBER 2009

ELECTRICAL CHARACTERISTICS

5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ< +125°C, typical values are at TA= 25°C, with respect to GND (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

OPERATING CONDITIONS

VCC_OP

QUIESCENT CURRENTS

BAT

CHARGE VOLTAGE REGULATION

VFB

CURRENT REGULATION – FAST CHARGE

ISET1

IREG_CHG

ISET1

CURRENT REGULATION – PRECHARGE

ISET2

VCC input voltage operating range(610) 5.0 28.0 VCC input voltage operating range(617) 5.0 24.0

Total battery discharge current (sum of currents into VCC, BTST, PH, ACP, V ACN, SRP, SRN, VFB), VFB ≤2.1 V

Battery discharge current (sum of currents into BTST, PH, SRP, SRN, VFB), VFB ≤ 2.1 V

Adapter supply current (current into V VCC,ACP,ACN pin) done

< V

> V > V

> V

SRN

SRN SRN

SRN

, V

, V , V

, V

VCC

done V

VCC

current)

VCC

Qg_total = 20 nC

> V

VCC

UVLO

> V

VCC

UVLO

> V

VCC

VCCLOW

> V

VCC

UVLO

VCC>VVCCLOW

(SLEEP) 15 μA

CE = LOW 5 µA

CE = HIGH, Charge

CE = LOW (IC quiescent

, CE = HIGH, charge

, CE = HIGH, Charging,

1 1.5

2 5 mA

Feedback regulation voltage 2.1 V

Charge voltage regulation accuracy

TJ= 0°C to 85°C –0.5% 0.5% TJ= -40°C to 125°C –0.7% 0.7%

Leakage current into VFB pin VFB = 2.1 V 100 nA

ISET1 voltage range 2 V SRP-SRN current sense voltage range V Charge current set factor (amps of

charge current per volt on ISET1 pin)

Charge current regulation accuracy

Leakage current into ISET1 pin V

R V

V V V

= V

IREG_CHG

= 10 mΩ 5 A/V

SENSE

IREG_CHG IREG_CHG IREG_CHG IREG_CHG

= 2 V 100 nA

ISET1

– V

SRP

SRN

= 40 mV –3% 3% = 20 mV –4% 4% = 5 mV –25% 25% = 1.5 mV (V

> 3.1V) –40% 40%

SRN

ISET2 voltage range 2 V Precharge current set factor (amps of

precharge current per volt on ISET2 pin)

Precharge current regulation accuracy V

Leakage current into ISET2 pin V

= 10 mΩ 1 A/V

SENSE

IREG_PRECH IREG_PRECH

IREG_PRECH ISET2

= 20 mV –4% 4% = 5 mV –25% 25% = 1.5 mV (V

< 3.1V) –55% 55%

SRN

= 2V 100 nA

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5 µA

100 mV

Product Folder Link(s): bq24610 bq24617

bq24610 bq24617

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ELECTRICAL CHARACTERISTICS (continued)

5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ< +125°C, typical values are at TA= 25°C, with respect to GND (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

CHARGE TERMINATION

TERM

QUAL

INPUT CURRENT REGULATION

ACSET

IREG_DPM

ACSET

ISET1

INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO)

UVLO

UVLO_HYS

VCC LOWV COMPARATOR

SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)

SLEEP _FALL

SLEEP_HYS

ACN / SRN COMPARATOR

ACN-SRN_FALL

ACN-SRN_HYS

BAT LOWV COMPARATOR

LOWV

LOWV_HYS

RECHARGE COMPARATOR

RECHG

Termination current set factor (Amps of termination current per volt on ISET2 R pin)

Termination current accuracy V

= 10 mΩ 1 A/V

SENSE

= 20 mV –4% 4%

ITERM

= 5 mV –25% 25%

ITERM

= 1.5 mV –45% 45%

ITERM

Deglitch time for termination (both edge) 100 ms Termination qualification time V

BAT>VRECH

and I

CHG<ITERM

Termination qualification current Discharge current once termination is detected 2 mA

ACSET Voltage Range 2 V ACP-ACN Current Sense Voltage

Range Input current set factor (amps of input

current per volt on ACSET pin)

Input current regulation accuracy leakage current in to ACSET pin

Leakage current in to ACSET pin V

R V

V V

= V

IREG_DPM

= 10 mΩ 5 A/V

SENSE

IREG_DPM IREG_DPM IREG_DPM

= 2 V 100 nA

ACSET

– V

ACP

ACN

= 40 mV –3% 3% = 20 mV –4% 4% = 5 mV –25% 25%

AC Under-voltage rising threshold Measure on VCC 3.65 3.85 4 V AC Under-voltage hysteresis, falling 350 mV

Falling threshold, disable charge Measure on VCC 4.1 V Rising threshold, resume charge 4.35 4.5 V

SLEEP falling threshold V

VCC

– V

to enter SLEEP 40 100 150 mV

SRN

SLEEP hysteresis 500 mV SLEEP rising delay VCC falling below SRN, Delay to turn off ACFET 1 μs SLEEP falling delay VCC rising above SRN, Delay to turn on ACFET 30 μs SLEEP rising shutdown deglitch VCC falling below SRN, Delay to enter SLEEP mode 100 ms SLEEP falling powerup deglitch VCC rising above SRN, Delay to exit SLEEP mode 30 ms

ACN to SRN falling threshold V

ACN

– V

to turn on BATFET 100 200 310 mV

SRN

ACN to SRN rising hysteresis 100 mV ACN to SRN rising deglitch V ACN to SRN falling deglitch V

Precharge to fastcharge transition (LOWV threshold)

– V – V

SRN SRN

> V

ACN-SRN_RISE

< V

ACN-SRN_FALL

ACN ACN

Measured on VFB pin, Rising 1.534 1.55 1.566 V

LOWV hysteresis 100 mV LOWV rising deglitch VFB falling below V LOWV falling deglitch VFB rising above V

Recharge threshold (with-respect-to V

)

REG

Measured on VFB pin, Falling 35 50 65 mV

Recharge rising deglitch VFB decreasing below V Recharge falling deglitch VFB decreasing above V

LOWV

+ V

RECHG

LOWV_HYS

SLUS892 –DECEMBER 2009

250 ms

100 mV

2 ms

50 μs

25 ms 25 ms

10 ms 10 ms

Product Folder Link(s): bq24610 bq24617

bq24610 bq24617

SLUS892 –DECEMBER 2009

ELECTRICAL CHARACTERISTICS (continued)

5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ< +125°C, typical values are at TA= 25°C, with respect to GND (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BAT OVER-VOLTAGE COMPARATOR

OV_RISE

OV_FALL

INPUT OVER-VOLTAGE COMPARATOR (ACOV)

ACOV

ACOV_HYS

ACOV

ACOV_HYS

THERMAL SHUTDOWN COMPARATOR

SHUT

SHUT_HYS

THERMISTOR COMPARATOR

LTF

LTF_HYS

HTF

TCO

CHARGE OVER-CURRENT COMPARATOR (CYCLE-BY-CYCLE)

CHARGE UNDER-CURRENT COMPARATOR (CYCLE-BY-CYCLE)

ISYNSET

BATTERY SHORTED COMPARATOR (BATSHORT)

BATSHT

BATSHT_HYS

BATSHT_DEG

LOW CHARGE CURRENT COMPARATOR

LC_HYS

LC_DEG

VREF REGULATOR

VREF_REG

VREF_LIM

Over-voltage rising threshold As percentage of V Over-voltage falling threshold As percentage of V

AC over-voltage rising threshold on VCC (bq24610)

AC over-voltage falling hysteresis (bq24610)

AC over-voltage rising threshold on VCC (bq24617)

AC over-voltage falling hysteresis(bq24617)

FB FB

31.04 32 32.96 V

25.22 26 26.78 V

104% 102%

1 V

820 mV

AC over-voltage deglitch (both edge) Delay to changing the STAT pins 1 ms AC over-voltage rising deglitch Delay to disable charge 1 ms AC over-voltage falling deglitch Delay to resume charge 20 ms

Thermal shutdown rising temperature Temperature increasing 145 °C Thermal shutdown hysteresis 15 °C Thermal shutdown rising deglitch Temperature increasing 100 μs Thermal shutdown falling deglitch Temperature decreasing 10 ms

Cold temperature rising threshold As Percentage to V Rising hysteresis As Percentage to V Hot temperature rising threshold As Percentage to V Cut-off temperature rising threshold As Percentage to V Deglitch time for temperature out of

range detection Deglitch time for temperature in valid

range detection

VTS> V

VTS< V

LTF

, or VTS< V

– V

LTF_HYS

VREF VREF VREF VREF

TCO

or VTS>V

, or VTS< V

TCO

HTF

, or VTS> V

HTF

Current rising, in non-synchronous mode, mesure on

Charge over-current falling threshold

V Current rising, as percentage of V

synchronous mode, V

Charge over-current threshold floor 50 mV

Charge over-current threshold ceiling 180 mV

Minimum OCP threshold in synchronous mode, measure on V

Maximum OCP threshold in synchronous mode, measure on V

Charge under-current falling threshold Switch from SYNCH to NON-SYNCH, V

BAT Short falling threshold, forced non-syn mode

, V

(SRP-SRN)

falling 2 V

SRP

< 2 V

SRP

(SRP-SRN)

SRP

, V

> 2.2V

SRP

> 2.2V

(IREG_CHG)

SRP

, in

> 2.2V 1 5 9 mV

72.5% 73.5% 74.5%

0.2% 0.4% 0.6%

36.2% 37% 37.8%

33.7% 34.4% 35.1% 400 ms

20 ms

45.5 mV

160%

BAT short rising hysteresis 200 mV Deglitch on both edge 1 μs

Low charge current (average) falling threshold to force into non-synchronous Measure on V mode

(SRP-SRN)

1.25 mV

Low charge current rising hysteresis 1.25 mV Deglitch on both edge 1 μs

VREF regulator voltage V VREF current limit V

VCC VREF

> V

, (0-35mA load) 3.267 3.3 3.333 V

UVLO

= 0V, V

VCC

> V

UVLO

35 mA

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Product Folder Link(s): bq24610 bq24617

bq24610 bq24617

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ELECTRICAL CHARACTERISTICS (continued)

5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ< +125°C, typical values are at TA= 25°C, with respect to GND (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

REGN REGULATOR

REGN_REG

REGN_LIM

TTC INPUT AND SAFETY TIMER

PRECHG

CHARGE

TTC

BATTERY SWITCH (BATFET) DRIVER

DS_BAT_OFF

DS_BAT_ON

BATDRV_REG

AC SWITCH (ACFET) DRIVER

DS_AC_OFF

DS_AC_ON

ACDRV_REG

AC / BAT MOSFET DRIVERS TIMING

BATTERY DETECTION

WAKE

DISCHARGE

FAULT

WAKE

DISCH

PWM HIGH SIDE DRIVER (HIDRV)

DS_HI_ON

DS_HI_OFF

BTST_REFRESH

PWM LOW SIDE DRIVER (LODRV)

DS_LO_ON

DS_LO_OFF

(1) Verified by design

REGN regulator voltage V REGN current limit V

Precharge safety timer range Fast charge saftey timer range, with +/-

10% accuracy

(1)

Fast charge timer accuracy

(1)

> 10V, CE = HIGH, (0-40mA load) 5.7 6.0 6.3 V

VCC REGN

= 0V, V

VCC

> V

, CE = HIGH 40 mA

UVLO

Precharge time before fault occurs 1440 1800 2160 sec Tchg = C

0.01 μF ≤ C

× K

TTC

≤ 0.11 μF –10% 10%

TTC

Timer multiplier 5.6 min/nF

below this threshold disables the safety timer and

TTC low threshold 0.4 V

TTC

termination TTC oscillator high threshold 1.5 V TTC oscillator low threshold 1 V TTC source/sink current 45 50 55 μA

BATFET turn-off resistance V BATFET turn-on resistance V

BATFET drive voltage 4.2 7 V

ACFET turn-off resistance V ACFET turn-on resistance V

ACFET drive voltage 4.2 7 V

> 5V 150 Ω

ACN

> 5V 20 kΩ

ACN

BATDRV_REG

BATFET is on

VCC VCC

ACDRV_REG

ACFET is on

= V

ACN

– V

BATDRV

when V

ACN

> 5V and

> 5V 30 Ω > 5V 20 kΩ

= V

VCC

– V

ACDRV

when V

VCC

> 5V and

Driver dead time Dead time when switching between AC and BAT 10 μs

Wake time Max time charge is enabled 500 ms Wake current R

= 10mΩ 50 125 200 mA

SENSE

Discharge time Max time discharge current is applied 1 sec Discharge current 8 mA Fault current after a timeout fault 2 mA Wake threshold (with-respect-to V

Discharge threshold 1.55 V

High side driver (HSD) turn-on resistance

High side driver turn-off resistance V Bootstrap refresh comparator threshold

voltage

) Voltage on VFB to detect battery absent during Wake 50 mV

REG

Voltage on VFB to detect battery absent during

discharge

– VPH= 5.5 V 3.3 6 Ω

BTST

– VPH= 5.5 V 1 1.3 Ω

BTST

– VPHwhen low side refresh pulse is requested 4.0 4.2 V

BTST

Low side driver (LSD) turn-on resistance 4.1 7 Ω Low side driver turn-off resistance 1 1.4 Ω

SLUS892 –DECEMBER 2009

1 10 Hr

Product Folder Link(s): bq24610 bq24617

bq24610 bq24617

SLUS892 –DECEMBER 2009

ELECTRICAL CHARACTERISTICS (continued)

5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ< +125°C, typical values are at TA= 25°C, with respect to GND (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

PWM DRIVERS TIMING

Driver dead time 30 ns

PWM OSCILLATOR

RAMP_HEIGHT

INTERNAL SOFT START (8 steps to regulation current ICHG)

CHARGER SECTION POWER-UP SEQUENCING

LOGIC IO PIN CHARACTERISTICS (CE, STAT1, STAT2, PG)

IN_LO

IN_HI

BIAS_CE

OUT_LO

OUT_HI

PWM ramp height As percentage of VCC 7 % PWM switching frequency

Soft start steps 8 step Soft start step time 1.6 ms

Charge-enable delay after power-up Delay from CE=1 to charger is allowed to turn on 1.5 s

CE input low threshold voltage 0.8 V CE input high threshold voltage 2.1 CE input bias current V = 3.3V (CE has internal 1MΩ pulldown resistor) 6 μA STAT1, STAT2, PG output low

saturation voltage Leakage current V = 32 V 1.2 µA

(2)

(2) Verified by design

Dead time when switching between LSD and HSD, no

load at LSD and HSD

510 600 690 kHz

Sink Current = 5 mA 0.5 V

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Product Folder Link(s): bq24610 bq24617

VCC

/PG

VREF

REGN

t − Time=4ms/div

5V/div

2V/div

10V/div

2V/div

t − Time=200ms/div

LODRV

IBAT

5V/div

10V/div

2 A/div

t − Time=4ms/div

LODRV

IBAT

5V/div

10V/div

2 A/div

t − Time=2 s/divμ

LODRV

5V/div

10V/div

2 A/div

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SLUS892 –DECEMBER 2009

TYPICAL CHARACTERISTICS

Table 1. Table of Graphs

Figure

REF REGN and PG Power Up (CE=1) Figure 2 Charge Enable Figure 3 Current Soft-Start (CE=1) Figure 4 Charge Disable Figure 5 Continuous Conduction Mode Switching Waveforms Figure 6 Cycle-by-Cycle Synchronous to Nonsynchronous Figure 7 100% Duty and Refresh Pulse Figure 8 Transient System Load (DPM) Figure 9 Battery Insertion Figure 10 Battery to Ground Short Protection Figure 11 Battery to ground Short Transition Figure 12 Efficiency vs Output Current Figure 13

bq24610 bq24617

Figure 2. REF REGN and PG Power Up (CE=1) Figure 3. Charge Enable

Figure 4. Current Soft-Start (CE=1) Figure 5. Charge Disable

Product Folder Link(s): bq24610 bq24617

t − Time=100ns/div

HIDRV

LODRV

2 A/div

20V/div

5V/div

t − Time=100ns/div

LODRV

1 A/div

5V/div

t − Time=400ns/div

LODRV

0.5 A/div

10V/div

5V/div

t − Time=200 s/divμ

IIN

ISYS

IBAT

2 A/div

t − Time=200ms/div

VBAT

2 A/div

5V/div

10V/div

t − Time=4ms/div

VBAT

LODRV

20V/div

5V/div

10V/div

2 A/div

bq24610 bq24617

SLUS892 –DECEMBER 2009

Figure 6. Continuous Conduction Mode Switching Waveform Figure 7. Cycle-by-Cycle Synchronous to Nonsynchronous

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Figure 8. 100% Duty and Refresh Pulse Figure 9. Transient System Load (DPM)

Figure 10. Battery Insertion Figure 11. Battery to GND Short Protection

Product Folder Link(s): bq24610 bq24617

t − Time=10 s/divμ

VBAT

LODRV

20V/div

5V/div

10V/div

2 A/div

0 1 2 3

IBAT-OutputCurrent- A

Efficiency-%

12Vin,1cell

12Vin,2cell

20Vin,3cell

20Vin,4cell

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bq24610 bq24617

SLUS892 –DECEMBER 2009

Figure 12. Battery to GND Short Transition Figure 13. Efficiency vs Output Current

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