TEMIC U2895B Technical data
查询U2895B供应商
Modulation PLL for GSM, DCS and PCS Systems
Description
The U2895B is a monolithic integrated circuit. It is
realized using TEMIC’s advanced silicon bipolar UHF5S
technology. The device integrates a mixer, an I/Q modulator, a phase-frequency detector (PFD) with two
synchronous programmable dividers, and a charge pump.
The U2895B is designed for cellular phones such as
GSM900, DCS1800, and PCS1900, applying a transmitter architecture at which the VCO operates at the TX
output frequency. No duplexer is needed since the out-of-
band noise is very low. The U2895B exhibits low power
consumption. Broadband operation gives high flexibility
for multi-band frequency mappings. The IC is available
in a shrinked small-outline 28-pin package (SSO28).
Electrostatic sensitive device.
Observe precautions for handling.
U2895B
Features
D
Supply voltage range 2.7 V to 5.5 V
D
Current consumption 50 mA
D
Power-down functions
D
High-speed PFD and charge pump (CP)
D
Small CP saturation voltages (0.5/0.6 V)
D
Programmable dividers and CP polarity
D
Low-current standby mode
Block Diagram
I NI MDLO Q NQ PUMIX PU MIXO MIXLO
ND
RD
MC
5
6
16
17
13
14
15
+
N1
divider
R1
divider
Mode
control
MDO
NMDO
NND
NRD
90°
2
I/Q modulator
MUX
Benefits
D
Novel TX architecture saves filter costs
D
Extended battery operating time without duplexer
D
Less board space (few external components)
D
VCO control without voltage doubler
D
Small SSO28 package
D
One device for all GSM bands
19122728321
25 20
Voltage
reference
PFD
Mixer
Charge
pump
101124184
22
23
21
26
RF
NRF
8
VSP
9
CPO
7
VS1
VS2
VS3
GND CPC GNDP
Figure 1. Block diagram
15048
Rev . A3, 30-Sep-98 1 (16)
U2895B
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Á
Á
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Á
Á
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Ordering Information
Extended Type Number Package Remarks
U2895B-AFSG3 SSO28 T aped and reeled
Pin Description
NI
MDLO
GND
MDO
NMDO
VS1
VSP
CPO
GNDP
CPC
PUMIX
RD
NRD
Pin Symbol Function
1
I
2
3
4
5
6
28
27
26
25
24
23
Q
NQ
VS3
MIXO
GND
NRF
10
11
1
2
3
4
5
6
7
8
9
I
NI
MDLO
GND
MDO
NMDO
VS1
VSP
CPO
GNDP
CPC
In-phase baseband input
Complementary to I
I/Q-modulator LO input
1)
Negative supply
I/Q-modulator output
Complementary to MDO
3)
Positive supply (I/Q MOD)
Pos. supply charge-pump
Charge-pump output
2)
Neg. supply charge pump
Charge-pump current control
(input)
7
8
9
10
11
12
13
14
12495
Figure 2. Pinning
22
21
20
19
18
17
16
15
RF
VS2
MIXLO
PU
GND
NND
ND
MC
12
13
14
15
16
17
18
19
Á
20
21
22
23
24
25
26
27
28
1)
PUMIX
RD
NRD
MC
ND
NND
GND
PU
ÁÁÁ
MIXLO
VS2
RF
NRF
GND
MIXO
VS3
NQ
Q
Power-up, mixer only
R-divider input
Complementary to RD
Mode control
N-divider input
Complementary to ND
1)
Negative supply
Power-up, whole chip except
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mixer
Mixer LO input
3)
Positive supply (MISC.)
Mixer RF-input
Complementary to RF
1)
Negative supply
Mixer output
3)
Positive supply (mixer)
Complementary to Q
Quad.-phase baseband input
All GND pins must be connected to GND
potential. No DC voltage between GND pins!
2)
3)
Max. voltage between GNDP and GND pins
v
200 mV
The maximum permissible voltage difference
between pins VS1, VS2 and VS3 is v200 mV.
Rev . A3, 30-Sep-982 (16)
Absolute Maximum Ratings
Á
Á
Á
Á
ÁÁÁ
ÁÁÁ
ÁÁÁ
pp y
ÁÁÁ
ÁÁÁ
pp y
ÁÁÁ
ÁÁÁ
pp y
ÁÁÁ
1)
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
Parameters Symbol Value Unit
Supply voltage VS1, VS2, VS3
Supply voltage charge pump VSP
Voltage at any input
Current at any input / output pin
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except CPC
CPC output currents
Ambient temperature
Storage temperature
Operating Range
Parameters Symbol Value Unit
Supply voltage
Ambient temperature
Thermal Resistance
Parameters Symbol Value Unit
Junction ambient SSO28
V
VS#
V
VSP
V
Vi#
| II# | | IO# |
ББББББ
| I
|
CPC
T
amb
T
stg
V
, V
VS#
VSP
T
amb
R
thJA
U2895B
v
V
VSP
5.5
–0.5 v V
БББББББ
+0.5 v 5.5
VS
2
5
–20 to +85
–40 to +125
2.7 to 5.5
–20 to +85
130
V
V
V
mA
ÁÁÁ
mA
°C
°C
V
°C
K/W
Electrical Characteristics
VS = 2.7 to 5.5 V, T
Parameters T est Conditions / Pin Symbol Min. T yp. Max. Unit
DC supply
Supply voltages VS#
Supply voltage VSP
Supply current I
Supply current I
Supply current I
Supply current I
N & R divider inputs ND, NND & RD, NRD
N:1 divider frequency
R:1 divider frequency
Input impedance
Input sensitivity
= –20°C to +85°C, final test at 25°C
amb
V
VS1
= V
VS1
Active (VPU = VS)
VS2
= V
Standby (VPU = 0)
VS2
Active (VPU = VS)
Standby (VPU = 0)
VS3
VSP
Active (V
PUMIX
Standby (V
Active
(V
= VS, CPC open)
PU
PUMIX
Standby (VPU = 0)
50-W source
50-W source
Active & standby
50-W source
VS3
= VS)
= 0)
V
VS#
V
VSP
I
VS1A
I
VS1Y
I
VS2A
I
VS2Y
I
VS3A
I
VS3Y
I
VSPA
I
VSPY
f
ND
f
RD
ZRD, Z
VRD, V
ND
ND
2.7
V
VS#
– 0.3
100
100
1 kΩ
20
17
17
13
1.4
5.5
5.5
22
20
22
20
17
30
1.8
20
600
600
2 pF
200
V
V
mA
m
mA
m
mA
m
mA
m
MHz
MHz
mV
A
A
A
A
–
rms
1) Mean value, measured with FND = 151 MHz, FRD = 150 MHz, current vs. time, see page 6, figure 3.
Rev . A3, 30-Sep-98 3 (16)
U2895B
Á
Á
Á
Á
Á
Á
4)
Á
Á
Á
Á
Electrical Characteristics (continued)
VS = 2.7 to 5.5 V, T
= –20°C to +85°C, final test at 25°C
amb
Parameters T est Conditions / Pin Symbol Min. Typ. Max. Unit
Phase-frequency detector (PFD)
PFD operation
fND = 450 MHz, N = 2
fRD = 450 MHz, R = 2
Frequency comparison
3)
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only
fND = 600 MHz, N = 2
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fRD = 450 MHz, R = 2
I/Q modulator baseband inputs I, NI & Q, NQ
DC voltage
MD_IQ
AC voltage
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Referred to GND
Frequency range
Referred to GND
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Differential (preferres)
I/Q modulator LO input MDLO
MDLO
Input impedance
Input level
Frequency range
Active & standby
50-W source
I/Q modulator outputs MDO, NMDO
DC current
Voltage compliance
MDO output level
V
, V
V
MDO
MDO
, V
NMDO
NMDO
500 W to VS
= VS
= VC
5)
(differential)
Carrier suppression
Sideband suppression
IF spurious
Noise
5)
5)
5)
5)
fLO ± 3 f
@ 400 kHz off carrier
mod
Frequency range
Mixer (900 MHz)
RF input level
LO-spurious at
RF/NRF port
MIXLO input level
MIXO (100-W load)
Output level
6)
Carrier suppression
900 MHz
@ P9
MIXLO
= –10 dBm
@ P9RF = –15 dBm
0.05 to 2 GHz
Frequency range
@ P9
@ P9
MIXLO
MIXLO
= –15 dBm
= –15 dBm
f
PFD
f
V
I,
AC
AC
AC
I
MDO
MDO
P9
CS9
FD
V
NI,
f
IO
AC
I,
Q, ACNQ
AC
DI,
f
MDLO
Z
MDLO
P
MDLO
, I
NMDO
, VC
P
MDO
CS
MDO
SS
MDO
SP
MDO
N
MDO
f
MDO
P9
RF
SP9
RF
MIXLO
f
MIXO
P9
MIXO
MIXO
V
Q,
NQ
NI,
DQ
NMDOVS
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V
БББББ
VC
50
225
300
ÁÁÁÁÁÁÁ
1.35
VS1/2
VS1/2
+ 0.1
DC
1
200
ÁÁÁÁ
ÁÁÁÁÁ
400
100
850
250
–20
–15
–10
2.4
– 0.7
120
–32
–35
–35
–40
–50
5.5
150
–45
–115
100
–23
450
–17
–40
–22
50
–12
450
70
–20
MHz
MHz
ÁÁ
V
MHz
mV
pp
mV
pp
MHz
W
dBm
mA
V
mV
rms
dBc
dBc
dBc
dBc/Hz
MHz
dBm
dBm
dBm
MHz
mV
rms
dBc
3)
4)
PFD can be used as a frequency comparator until 300 MHz for loop acquisition
Single-ended operation (complementary baseband input is AC-grounded) leads to reduced linearity
(degrading suppression of odd harmonics)
5)
6)
With typical drive levels at MDLO- & I/Q-inputs
–1 dB compression point (CP-1)
Rev . A3, 30-Sep-984 (16)
Electrical Characteristics (continued)
Á
Á
Á
Á
Á
pp
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
U2895B
VS = 2.7 to 5.5 V, T
= –20°C to +85°C, final test at 25°C
amb
Parameters T est Conditions / Pin Symbol Min. T yp. Max. Unit
Mixer (1900 MHz)
RF input level
LO-spurious at
ББББББ
RF/NRF ports
MIXLO input level
0.5 to 2 GHz
@ P19
ББББББ
@ P19RF = –15 dBm
MIXLO
= –10 dBm
0.05 to 2 GHz
SP19
ÁÁÁÁ
P19
MIXO (100 W load)
Output level
Carrier suppression
Charge-pump output CPO (V
Pump-current pulse
TK pump current
Mismatch source / sink
current
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Sensivity to VSP
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V
CPO
6)
voltage range
@ P19
@ P19
VSP
MIXLO
MIXLO
= 5 V; V
= –17 dBm
= –17 dBm
CPO
CPC open for DC
CPOSO
sourc
sink
7)
7)
)/I
CPOSI
D
VSP
VSP
R
= 2.2 kΩ
CPC
P
= 680 Ω
CPC
(I
– I
CPOSI
I
= I
CPOSO
ББББББ
I
= I
CPOSI
D
I
CPO
|
||
I
CPO
= 2.5 V)
ÁÁÁÁ
|
ÁÁÁÁ
P19
CS19
| I
| I
Tk_| I
Charge-pump control input CPC
Compensation capacitor
Short circuit current
8)
CPC grounded
| I
Mode control
Sink current
VMC = VS
Power-up input PU (power-up for all functions, except mixer)
Settling time
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High level
Low level
High-level current
Low-level current
Output power within 10%
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of steady state values
Active
Standby
Active, V
Standby , V
PUH
PUL
= 2.2 V
= 0.4 V
ÁÁÁÁ
Power-up input PUMIX (power -up for mixer only)
Settling time
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High level
Low level
High-level current
Low-level current
Output power within 10%
ББББББ
of steady state values
Active
Standby
Active, V
PUMIXH
= 2.2 V
Standby ,
V
PUMIXL
= 0.4 V
ÁÁÁÁ
V
V
I
I
P19
RF
RF
MIXLO
MIXO
MIXO
| I
|
CPO
CPO 2
CPO_4
CPC
M
ICPO
S
ICPO
V
CPO
C
CPC
CPCK
I
MC
S
PU
V
PUH
V
PUL
I
PUH
I
PUL
t
setl
PUMIXH
PUMIXL
PUMIXH
PUMIXL
–23
ÁÁÁÁÁÁÁÁ
–22
55
–20
0.7
|
|
|
1.4
3
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
1
2
4
0.5
500
|
1.6
60
ÁÁÁÁÁ
5
2.0
0
50
–1
ÁÁÁÁÁ
5
2.0
0
50
–1
–17
–40
–12
V
VSP
ÁÁ
ÁÁ
V
1.3
2.6
5
15
0.1
0.1
10
0.4
75
20
10
0.4
75
20
–0.6
S2
dBm
dBm
ÁÁ
dBm
mVrms
dBc
mA
mA
mA
%/100°K
–
ÁÁ
–
ÁÁ
V
pF
mA
m
A
m
s
ÁÁ
V
V
m
A
m
A
m
s
ÁÁ
V
V
m
A
m
A
6)
7)
8)
Rev . A3, 30-Sep-98 5 (16)
– 1 dB compression point (CP – 1)
R
: external resistor to GND for charge-pump current control
CPC
See figure 7.
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