Telefunken TSMS3700 Datasheet

Vishay Telefunken

GaAs Infrared Emitting Diode in SMT Package

Description

TSMS3700 is a standard GaAs infrared emitting diode
in a miniature PL–CC–2 package.
Its flat window provides a wide aperture, making it ideal
for use with external optics.
The diode is case compatible to the TEMT3700 photo­transistor, allowing the user to assemble his own
optical interrupters.

Features

D

SMT IRED with high radiant power

D

Low forward voltage

D

Compatible with automatic placement equipment

D

EIA and ICE standard package

D

Suitable for infrared, vapor phase and wave­solder process

D

Available in 8 mm tape

D

Suitable for DC and high pulse current operation

D

Wide angle of half intensity ϕ = ± 60

D

Peak wavelength

D

High reliability

D

Matching to TEMT3700 phototransistor

l

= 950 nm

p

°

TSMS3700

94 8553

Applications

Infrared source in tactile keyboards
IR diode in low space applications
Matching with phototransistor TEMT3700 in reflective sensors
PCB mounted infrared sensors
Infrared emitter for miniature light barriers

Document Number 81037
Rev. 3, 01-Aug-00

www.vishay.com

1 (6)

TSMS3700

g

y

Vishay Telefunken

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t x10sec T
Thermal Resistance Junction/Ambient on PC board R

R

F

FM

FSM

V

j

amb

stg

sd

thJA

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Forward Voltage IF = 100 mA, tp = 20 ms V

IF = 1 A, tp = 100 ms V

Temp. Coefficient of V

F

IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I

IF = 1.5 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of

f

e

IF = 100 mA TK

F
F
VF

R

j
e
e

f

1.6 4.5 mW/sr

e

f

e

Angle of Half Intensity ϕ ±60 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of

l

p

IF = 100 mA TK

Rise Time IF = 20 mA t

IF = 1 A t

Fall Time IF = 20 mA t

IF = 1 A t

l

Dl

p

l

p
r
r
f
f

1.3 1.7 V

1.8 V

–1.3 mV/K

30 pF

35 mW/sr
15 mW

–0.8 %/K

950 nm

50 nm

0.2 nm/K
800 ns
400 ns
800 ns
400 ns

5 V
100 mA
200 mA

1.5 A
170 mW
100

–55...+100
–55...+100

260
450 K/W

100

°
°
°
°

m

C
C
C
C

A

www.vishay.com
2 (6) Rev. 3, 01-Aug-00

Document Number 81037