Telefunken TSML3700 Datasheet
TSML3700
Vishay Telefunken
GaAs/GaAlAs Infrared Emitting Diode in SMT Package
Description
TSML3700 is an infrared emitting diode in GaAlAs on
GaAs technology in a miniature PL–CC–2 SMD package.
It has been designed to meet the increasing demand
on optoelectronic devices for surface mounting.
The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside
the package is filled up with clear epoxy.
This new package achieves an improvement of 100%
in radiant intensity, compared with the old SOT–23
package.
94 8553
Features
D
SMT IRED with extra high radiant power
D
Low forward voltage
D
Compatible with automatic placement equipment
D
EIA and ICE standard package
D
Suitable for infrared, vapor phase and wavesolder process
D
Available in 8 mm tape
D
Suitable for pulse current operation
D
Extra wide angle of half intensity ϕ = ± 60
D
Peak wavelength
D
High reliability
D
Matching to TEMT3700 phototransistor
l
= 925 nm
p
°
Applications
Infrared source in tactile keyboards
IR diode in low space applications
Matching with phototransistor TEMT3700 in reflective sensors
High performance PCB mounted infrared sensors
High power infrared emitter for miniature light barriers
Document Number 81034
Rev. 3, 20-May-99
www.vishay.com
1 (6)
TSML3700
g
y
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t x10sec T
Thermal Resistance Junction/Ambient R
R
F
FM
FSM
V
j
amb
stg
sd
thJA
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
e
e
f
2.5 7 mW/sr
e
f
e
Angle of Half Intensity ϕ ±60 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 20 mA t
IF = 1 A t
Fall Time IF = 20 mA t
IF = 1 A t
l
Dl
p
l
p
r
r
f
f
1.3 1.7 V
2.2 V
–1.3 mV/K
20 pF
60 mW/sr
32 mW
–0.8 %/K
925 nm
50 nm
0.2 nm/K
800 ns
500 ns
800 ns
500 ns
5 V
100 mA
200 mA
1 A
170 mW
100
–55...+100
–55...+100
260
450 K/W
100
°
°
°
°
m
C
C
C
C
A
www.vishay.com
2 (6) Rev. 3, 20-May-99
Document Number 81034
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