TSKS5400
Vishay Telefunken
GaAs Infrared Emitting Diode in Side View Package
Description
TSKS5400 is a standard GaAs infrared emitting diode
in a flat sideview molded plastic package. A small
recessed spherical lens provides an improved radiant
intensity in a low profile case.
The diode is case compatible to the TEKS5400
photodetector, allowing the user to assemble his own
optical sensor.
Features
D
Side view package with spherical lens
D
Radiation direction perpendicular to
mounting direction
D
Angle of half sensitivity ϕ = ± 30
D
Peak wavelength
D
Case compatible with TEKS5400
D
Ordering code:
l
= 950 nm
P
°
TSKS5400-ESZ (2.54 mm Pin distance)
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Surge forward current tp x 100 ms I
Power dissipation P
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t x 5 s, 2 mm from body T
Thermal resistance junction/ ambient R
R
F
FSM
V
stg
stg
sd
thJA
14 354
6 V
100 mA
2 A
170 mW
j
100
–25 to +85
–40 to +100
260
°
C
°
C
°
C
°
C
450 k/W
Document Number 83780
Rev. A7, 15-Dez-99
www.vishay .de • FaxBack +1-408-970-5600
1 (5)
TSKS5400
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward voltage IF = 100 mA, tp x 20 ms V
Reverse voltage IR = 10 mA V
Junction capacitance VR =0 V, f = 1 MHz, E = 0 C
Radiant intensity IF = 50 mA, tp x 20 ms I
Radiant power IF = 50 mA, tp x 20 ms
Temp. coefficient of
f
e
IF = 50 mA TK
F
VR
j
e
f
e
f
6 V
2 7 mW/ sr
e
Angle of half sensitivity ϕ ±30
Peak wavelength IF = 50 mA
Spectral bandwidth IF = 50 mA
Rise time IF = 1 A, tp/T = 0.01, tp x 10 ms t
Fall time IF = 1 A, tp/T = 0.01, tp x 10 ms t
l
Dl
p
r
f
1.3 1.7 V
50 pF
10 mW
–1 % K
950 nm
50 nm
400 ns
450 ns
°
Typical Characteristics (T
200
150
R
thJA
100
50
V
P – Power Dissipation ( mW )
0
0 20406080100
T
– Ambient Temperature ( °C )14846
amb
= 25_C unless otherwise specified)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
125
100
R
75
thJA
4
10
3
10
2
10
1
10
F
0
I – Forward Current ( mA )
10
–1
10
0123
94 7996 e
– Forward Voltage ( V )
V
F
Figure 3. Forward Current vs. Forward Voltage
1.5
IF = 10 mA
1.4
1.3
1.2
4
50
F
25
I – Forward Current ( mA )
0
0 20406080100
T
– Ambient Temperature ( °C )14847
amb
Figure 2. Forward Current vs. Ambient Temperature
1.1
1.0
Frel
0.9
V – Relative Forward Voltage
0.8
–45 –30 –15 0 15 30 45 60 75 90
T
– Ambient Temperature ( °C )14347
amb
Figure 4. Relative Forward Current vs.
Ambient Temperature
www.vishay .de • FaxBack +1-408-970-5600
2 (5) Rev. A7, 15-Dez-99
Document Number 83780