Telefunken TSHF5400 Datasheet
TSHF5400
Vishay Telefunken
High Speed IR Emitting Diode in ø 5 mm (T–1¾) Package
Description
TSHF5400 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded on copper frame, in a clear, untinted plastic
package.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology .
Features
D
High modulation bandwidth (10 MHz)
D
Extra high radiant power and radiant intensity
D
Low forward voltage
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 22
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 870 nm
°
94 8390
Applications
Infrared high speed remote control and free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
TSHF5400 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
FSM
T
R
F
FM
V
j
amb
stg
sd
thJA
5 V
100 mA
200 mA
1.5 A
160 mW
100
–40...+100
–40...+100
260
270 K/W
°
C
°
C
°
C
°
C
Document Number 81024
Rev. 7, 02-Aug-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
TSHF5400
g
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
e
e
f
e
25 40 mW/sr
f
e
Angle of Half Intensity ϕ ±22 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t
l
Dl
p
l
p
r
f
Virtual Source Diameter method: 63% encircled energy ø 2.2 mm
1.35 1.6 V
2.4 3.0 V
–1.7 mV/K
10
m
160 pF
400 mW/sr
35 mW
–0.7 %/K
870 nm
40 nm
0.2 nm/K
30 ns
30 ns
A
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 7, 02-Aug-99
Document Number 81024
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