Telefunken TSHA6502, TSHA6503, TSHA6501, TSHA6500 Datasheet
TSHA650.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾)
Package
Description
The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
In contrast to the TSHA550. series lead stand–offs are
omitted.
Features
D
Extra high radiant power
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Leads formed without stand–off
D
Angle of half intensity ϕ = ± 24
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 875 nm
°
94 8389
Applications
Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
FSM
T
R
F
FM
V
j
amb
stg
sd
thJA
5 V
100 mA
200 mA
2.5 A
210 mW
100
–55...+100
–55...+100
260
350 K/W
°
C
°
C
°
C
°
C
Document Number 81022
Rev. 3, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
TSHA650.
gFm
F
Radiant Intensity
F
m
F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Temp. Coefficient of
f
e
IF = 20 mA TK
F
VF
R
j
f
e
Angle of Half Intensity ϕ ±24 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1.5 A t
Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p
r
r
f
f
1.5 1.8 V
–1.6 mV/K
100
m
20 pF
–0.7 %/K
875 nm
80 nm
0.2 nm/K
600 ns
300 ns
600 ns
300 ns
A
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward Voltage IF=1.5A, tp=100ms TSHA6500/6501 V
TSHA6502/6503 V
IF=100mA, TSHA6500 I
tp=20ms
TSHA6501 I
TSHA6502 I
TSHA6503 I
IF=1.5A, tp=100ms TSHA6500 I
TSHA6501 I
TSHA6502 I
TSHA6503 I
Radiant Power IF=100mA, TSHA6500
tp=20ms
TSHA6501
TSHA6502
TSHA6503
F
F
e
e
e
e
e
e
e
e
f
e
f
e
f
e
f
e
12 20 mW/sr
16 25 mW/sr
20 30 mW/sr
24 35 mW/sr
150 240 mW/sr
200 300 mW/sr
250 360 mW/sr
300 420 mW/sr
3.2 4.9 V
3.2 4.5 V
22 mW
23 mW
24 mW
25 mW
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 3, 20-May-99
Document Number 81022
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