Telefunken TSHA5503, TSHA5502, TSHA5501, TSHA5500 Datasheet

TSHA550.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package
Description
The TSHA550. series are high efficiency infrared emit­ting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement.
94 8390
Features
D
Extra high radiant power
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 24
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 875 nm
°
Applications
Infrared remote control and free air transmission systems with high power and comfortable radiation angle re­quirements in combination with PIN photodiodes or phototransistors. Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit Reverse Voltage V Forward Current I Peak Forward Current tp/T = 0.5, tp = 100 ms I Surge Forward Current tp = 100 ms I Power Dissipation P Junction Temperature T Operating Temperature Range T Storage Temperature Range T Soldering Temperature Thermal Resistance Junction/Ambient R
Document Number 81020 Rev. 2, 20-May-99
t x 5sec, 2 mm from case
www.vishay.de FaxBack +1-408-970-5600
R
F
FM
FSM
V
amb
stg
T
sd
thJA
5 V 100 mA 200 mA
2.5 A
210 mW
j
100
–55...+100 –55...+100
260 350 K/W
° ° ° °
C C C C
1 (6)
TSHA550.
gFm
F
Radiant Intensity
F
m
F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit Forward Voltage IF = 100 mA, tp = 20 ms V Temp. Coefficient of V
F
IF = 100mA TK Reverse Current VR = 5 V I Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C Temp. Coefficient of
f
e
IF = 20 mA TK
F VF
R
j
f
e
Angle of Half Intensity ϕ ±24 deg Peak Wavelength IF = 100 mA Spectral Bandwidth IF = 100 mA Temp. Coefficient of
l
p
IF = 100 mA TK Rise Time IF = 100 mA t
IF = 1.5 A t Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p r r f f
1.5 1.8 V
–1.6 mV/K
100
m
20 pF
–0.7 %/K
875 nm
80 nm
0.2 nm/K 600 ns 300 ns 600 ns 300 ns
A
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward Voltage IF=1.5A, tp=100ms TSHA5500/5501 V
TSHA5502/5503 V
IF=100mA, TSHA5500 I tp=20ms
TSHA5501 I TSHA5502 I TSHA5503 I
IF=1.5A, tp=100ms TSHA5500 I
TSHA5501 I TSHA5502 I TSHA5503 I
Radiant Power IF=100mA, TSHA5500
tp=20ms
TSHA5501 TSHA5502 TSHA5503
F
F e e e e e e e e
f
e
f
e
f
e
f
e
12 20 mW/sr 16 25 mW/sr 20 30 mW/sr
24 35 mW/sr 150 240 mW/sr 200 300 mW/sr 250 360 mW/sr 300 420 mW/sr
3.2 4.9 V
3.2 4.5 V
22 mW 23 mW 24 mW 25 mW
www.vishay.de FaxBack +1-408-970-5600 2 (6) Rev. 2, 20-May-99
Document Number 81020
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