2.7–5.5V Serial Infrared Transceiver Module Family
(SIR, 115.2 kbit/s)
FeaturesApplications
Compliant to IrDA 1.2 (up to
115.2 kbit/s)
Wide Operating Voltage Range
(2.7 to 5.5 V )
Low Power Consumption
(1.3 mA Supply Current)
Power Sleep Mode Through
/SD Pin (5 nA Sleep
V
CC1
Current)
Long Range (up to 3.0 m at 115.2
kbit/s)
Three Surface Mount Package
Options
– Universal (9.7 x 4.7 x 4.0 mm)
– Side View (13.0x5.95x5.3mm)
– T op View (13.0x7.6x5.95mm)
BabyFace (Universal) Package
Capable of Surface Mount
Solderability to Side- and
T op-View Orientation
Directly Interfaces with Various
Super I/O and Controller Devices
and TEMIC’s TOIM3000 and
TOIM3232 I/Os
Few External Components
Required
Backward Compatible to All
TEMIC SIR Infrared
Transceivers
Built–in EMI Protection – No
External Shielding Necessary
Description
The TFDU4100, TFDS4500, and TFDT4500 are a family
of low-power infrared transceiver modules compliant to
the IrDA 1.2 standard for serial infrared (SIR) data
communication, supporting IrDA speeds up to 115.2
kbit/s. Integrated within the transceiver modules are a
photo PIN diode, infrared emitter (IRED), and a
low-power analog control IC to provide a total front–end
solution in a single package. TEMIC’s SIR transceivers
are available in three package options, including our
BabyFace package (TFDU4100), the smallest SIR
transceiver available on the market. This wide selection
Notebook Computers, Desktop
PCs, Palmtop Computers (Win
CE, Palm PC), PDAs
Digital Still and Video Cameras
Printers, Fax Machines,
Photocopiers, Screen Projectors
T elecommunication Products
(Cellular Phones, Pagers)
Internet TV Boxes, Video
conferencing systems
External Infrared Adapters
(Dongles)
Medical and Industrial Data
Collection Devices
provides flexibility for a variety of applications and space
constraints.
The transceivers are capable of directly interfacing with
a wide variety of I/O chips which perform the pulse-width
modulation/demodulation function, including TEMIC’s
TOIM3000 and TOIM3232. At a minimum, a
current-limiting resistor in series with the infrared emitter
and a Vcc bypass capacitor are the only external
components required to implement a complete solution.
Package Options
TFDU4100
Baby Face (Universal)
This product is currently in devleopment. Inquiries regarding the status of this product should be directed to TEMIC Marketing.
Pending—Rev. A, 03-Apr-981
TFDS4500
Side View
TFDT4500
Top View
Pre-Release Information
TFDU4100/TFDS4500/TFDT4500
Functional Block Diagram
V
/SD
CC1
Driver
AmplifierComparator
AGC
SC
Logic
Rxd
IRED Anode
TELEFUNKEN
Semiconductor
V
CC2
R
S
Txd
Open Collector Driver
GND
IRED Cathode
Pin Assignment and Description
Pin Number
“ U ”, “ T ”
Option
18IRED AnodeIRED anode, should be externally connected to V
21IRED Cathode IRED cathode, internally connected to driver transistor
37TxdTransmit Data InputIHIGH
42RxdReceived Data Output, push–pull CMOS driver output capable of driving a
56NCDo not connect
63V
75SCSensitivity controlIHIGH
84GNDGround
“ S ”
Option
FunctionDescriptionI/OActive
through a current
control resistor
standard CMOS or TTL load. No external pull–up or pull–down resistor is
required (20 kΩ resistor internal to device). Pin is inactive during
transmission.
/ SDSupply Voltage/Shutdown (see “Shutdown” on page 6)
CC1
CC2
OLOW
5678
IREDDetector
12345678
”U” Option
BabyFace (Universal)
123 4
IREDDetector
”S” Option
Side View
IREDDetector
1 2345678
”T” Option
Top View
2Pending—Rev . A, 03-Apr-98
Pre-Release Information
TELEFUNKEN
V
A
°C
A
TFDU4100/TFDS4500/TFDT4500
Semiconductor
Ordering Information
Part NumberQty/ ReelDescription
TFDU4100–TR31000 pcsOriented in carrier tape for side view surface mounting
TFDU4100–TT31000 pcsOriented in carrier tape for top view surface mounting
TFDS4500–TR3750 pcs
TFDT4500–TR3750 pcs
Absolute Maximum Ratings
ParameterSymbolTest Conditions
Supply Voltage RangeV
Voltage Range of IRED Drive OutputV
Input Currents
Output Sink Current25
Power Dissipation
Junction TemperatureT
Ambient Temperature Range (Operating)T
Storage Temperature RangeT
Soldering Temperaturet = 20 s215240
Average IRED CurrentI
Repetitive Pulsed IRED CurrentI
IRED Anode Voltage at Current OutputV
Transmitter Data Input VoltageV
Receiver Data Output VoltageV
Virtual Source Size
Maximum Intensity for Class 1 Operation of
IEC 825 or EN60825
Notes
a. Reference point GND pin unless otherwise noted.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. All pins except IRED cathode pin and IRED anode pin.
e. See Derating Curve
f. Method: (1-1/e) encircled energy.
g. Worst case IrDA SIR pulse pattern.
d
e
f
g
CC1
CC2
P
D
J
amb
stg
(DC)100
IRED
(RP)t < 90µs, ton<20%500
IRED
IREDA
Txd
Rxd
d2.52.8mm
IRED anode pin, Txd LOW– 0.56
EN60825, 1997400mW/sr
a
b
Min
– 0.56
–2585
–2585
– 0.56
– 0.5V
– 0.5V
Typ
c
Max
200mW
125
cc
cc
10
+ 0.5
+ 0.5
b
Unit
m
°
m
V
Pending—Rev. A, 03-Apr-983
Pre-Release Information
TFDU4100/TFDS4500/TFDT4500
V
ppy,
CC1
I
A
ppy,
CC1
(g)
I
M
d
kW/
2
Rxd Output Volt
Electrical Characteristics
TELEFUNKEN
Semiconductor
ParameterSymbolTest Conditions
a
Min
b
TypcMax
b
Unit
Transceiver
Supply VoltageV
Supply VoltageV
Supply Current, V
(Receive Mode)
Supply Current, V
(Transmit Mode)
CC1
CC1
d
Pin
Pin (avg)
Leakage Current of IR Emitter, IRED
Anode Pin
Transceiver Power On Settling TimeI
CC1
CC1
S
S
I
S
S
V
CC1
Receive Mode2.75.5
Transmit Mode, R2 = 51 Ω2.05.5
V
= 5.5V1.32.5
CC1
V
= 2.7V1.01.5
CC1
V
= 5.5V5.05.5
CC1
V
= 2.7V3.54.5
CC1
= OFF, Txd = LOW , V
T = 25°– 85° C
CC2
= 6V,
0.0050.5µA
50µs
m
Optoelectronic Characteristics
ParameterSymbolTest Conditions
a
Receiver
E
Min Detection Threshold Irradiance
Min Detection Threshold Irradiance
ax Detection Threshold Irradiance
e
d
d
Logic Low Receiver Input IrradianceE
age
emin
E
emin
E
emax
emax (low)
V
OL
V
OH
Output CurrentVOL < 0.8V4mA
Rise Timet
Fall Timet
Rxd Pulse Width of Output SignalP
f
Jitter
Latencyt
r
f
w
t
j
L
Notes
a. T
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
= 25_C, VCC = 2.7 – 5.5 V unless otherwise noted.
amb
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. I
e. BER = 10
(peak) = 210 mA (At IRED Anode pin)
IRED
–8
(IrDA specification).
f. Leading edge of output signal.
α = ±15_, SIR Mode, SC = LOW2035
α = ±15_, SIR Mode, SC = LOW,
V
= 2.7V
CC1
α = ±15_, SIR Mode, SC = HIGH61015
α = ± 90_, SIR Mode, V
α = ± 90_, SIR Mode, V
= 5V3.35
CC1
= 3V815
CC1
SC = HIGH or LOW4mW/m
Active, C = 15 pF, R = 2.2 kΩ0.50.8V
Non–active, C = 15 pF, R = 2.2 kΩVCC–0.5
C = 15 pF, R = 2.2 kΩ201400
C = 15 pF, R = 2.2 kΩ20200
115.2 kbit/s mode1.418
Over a period of 10 bit, 115.2 kbit/s2
Min
b
TypcMax
100500µs
b
Unit
35
mW/m
2
2
m
2
ns
µs
4Pending—Rev . A, 03-Apr-98
Pre-Release Information
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