Telefunken TOIM3232, TFDU4100, TFDS4500 Datasheet

TELEFUNKEN
TFDU4100/TFDS4500/TFDT4500
Semiconductor
2.7–5.5V Serial Infrared Transceiver Module Family (SIR, 115.2 kbit/s)
Features Applications
115.2 kbit/s)
Wide Operating Voltage Range
(2.7 to 5.5 V )
Low Power Consumption
(1.3 mA Supply Current)
Power Sleep Mode Through
/SD Pin (5 nA Sleep
V
CC1
Current)
Long Range (up to 3.0 m at 115.2
kbit/s)
Three Surface Mount Package
Options
Universal (9.7 x 4.7 x 4.0 mm)Side View (13.0 x 5.95 x 5.3 mm)T op View (13.0 x 7.6 x 5.95 mm)
BabyFace (Universal) Package
Capable of Surface Mount Solderability to Side- and T op-View Orientation
Directly Interfaces with Various
Super I/O and Controller Devices and TEMIC’s TOIM3000 and TOIM3232 I/Os
Few External Components
Required
Backward Compatible to All
TEMIC SIR Infrared Transceivers
Built–in EMI Protection – No
External Shielding Necessary
Description
The TFDU4100, TFDS4500, and TFDT4500 are a family of low-power infrared transceiver modules compliant to the IrDA 1.2 standard for serial infrared (SIR) data communication, supporting IrDA speeds up to 115.2 kbit/s. Integrated within the transceiver modules are a photo PIN diode, infrared emitter (IRED), and a low-power analog control IC to provide a total front–end solution in a single package. TEMIC’s SIR transceivers are available in three package options, including our BabyFace package (TFDU4100), the smallest SIR transceiver available on the market. This wide selection
Notebook Computers, Desktop
PCs, Palmtop Computers (Win CE, Palm PC), PDAs
Digital Still and Video CamerasPrinters, Fax Machines,
Photocopiers, Screen Projectors
T elecommunication Products
(Cellular Phones, Pagers)
Internet TV Boxes, Video
conferencing systems
External Infrared Adapters
(Dongles)
Medical and Industrial Data
Collection Devices
provides flexibility for a variety of applications and space constraints.
The transceivers are capable of directly interfacing with a wide variety of I/O chips which perform the pulse-width modulation/demodulation function, including TEMIC’s TOIM3000 and TOIM3232. At a minimum, a current-limiting resistor in series with the infrared emitter and a Vcc bypass capacitor are the only external components required to implement a complete solution.
Package Options
TFDU4100
Baby Face (Universal)
This product is currently in devleopment. Inquiries regarding the status of this product should be directed to TEMIC Marketing.
Pending—Rev. A, 03-Apr-98 1
TFDS4500
Side View
TFDT4500
Top View
Pre-Release Information
TFDU4100/TFDS4500/TFDT4500
Functional Block Diagram
V
/SD
CC1
Driver
Amplifier Comparator
AGC
SC
Logic
Rxd
IRED Anode
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Semiconductor
V
CC2
R
S
Txd
Open Collector Driver
GND
IRED Cathode
Pin Assignment and Description
Pin Number
“ U ”, “ T ”
Option
1 8 IRED Anode IRED anode, should be externally connected to V
2 1 IRED Cathode IRED cathode, internally connected to driver transistor 3 7 Txd Transmit Data Input I HIGH 4 2 Rxd Received Data Output, push–pull CMOS driver output capable of driving a
5 6 NC Do not connect 6 3 V 7 5 SC Sensitivity control I HIGH 8 4 GND Ground
“ S ”
Option
Function Description I/O Active
through a current
control resistor
standard CMOS or TTL load. No external pull–up or pull–down resistor is required (20 k resistor internal to device). Pin is inactive during transmission.
/ SD Supply Voltage/Shutdown (see “Shutdown” on page 6)
CC1
CC2
O LOW
5678
IRED Detector
12345678
”U” Option
BabyFace (Universal)
123 4
IRED Detector
”S” Option
Side View
IRED Detector
1 2345678
”T” Option
Top View
2 Pending—Rev . A, 03-Apr-98
Pre-Release Information
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V
A
°C
A
TFDU4100/TFDS4500/TFDT4500
Semiconductor
Ordering Information
Part Number Qty/ Reel Description
TFDU4100–TR3 1000 pcs Oriented in carrier tape for side view surface mounting TFDU4100–TT3 1000 pcs Oriented in carrier tape for top view surface mounting
TFDS4500–TR3 750 pcs
TFDT4500–TR3 750 pcs
Absolute Maximum Ratings
Parameter Symbol Test Conditions
Supply Voltage Range V Voltage Range of IRED Drive Output V Input Currents Output Sink Current 25 Power Dissipation Junction Temperature T Ambient Temperature Range (Operating) T Storage Temperature Range T Soldering Temperature t = 20 s 215 240 Average IRED Current I Repetitive Pulsed IRED Current I IRED Anode Voltage at Current Output V Transmitter Data Input Voltage V Receiver Data Output Voltage V Virtual Source Size Maximum Intensity for Class 1 Operation of
IEC 825 or EN60825
Notes a. Reference point GND pin unless otherwise noted. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. All pins except IRED cathode pin and IRED anode pin. e. See Derating Curve f. Method: (1-1/e) encircled energy. g. Worst case IrDA SIR pulse pattern.
d
e
f
g
CC1 CC2
P
D
J
amb
stg
(DC) 100
IRED
(RP) t < 90µs, ton<20% 500
IRED
IREDA
Txd
Rxd
d 2.5 2.8 mm
IRED anode pin, Txd LOW – 0.5 6
EN60825, 1997 400 mW/sr
a
b
Min
– 0.5 6
–25 85 –25 85
– 0.5 6 – 0.5 V – 0.5 V
Typ
c
Max
200 mW 125
cc cc
10
+ 0.5 + 0.5
b
Unit
m
°
m
V
Pending—Rev. A, 03-Apr-98 3
Pre-Release Information
TFDU4100/TFDS4500/TFDT4500
V
pp y ,
CC1
I
A
pp y ,
CC1
(g)
I
M
d
kW/
2
Rxd Output Volt
Electrical Characteristics
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Semiconductor
Parameter Symbol Test Conditions
a
Min
b
TypcMax
b
Unit
Transceiver
Supply Voltage V Supply Voltage V
Supply Current, V (Receive Mode)
Supply Current, V (Transmit Mode)
CC1
CC1 d
Pin
Pin (avg)
Leakage Current of IR Emitter, IRED Anode Pin
Transceiver Power On Settling Time I
CC1 CC1
S
S
I
S
S
V
CC1
Receive Mode 2.7 5.5
Transmit Mode, R2 = 51 2.0 5.5
V
= 5.5V 1.3 2.5
CC1
V
= 2.7V 1.0 1.5
CC1
V
= 5.5V 5.0 5.5
CC1
V
= 2.7V 3.5 4.5
CC1
= OFF, Txd = LOW , V
T = 25°– 85° C
CC2
= 6V,
0.005 0.5 µA 50 µs
m
Optoelectronic Characteristics
Parameter Symbol Test Conditions
a
Receiver
E
Min Detection Threshold Irradiance
Min Detection Threshold Irradiance
ax Detection Threshold Irradiance
e
d
d
Logic Low Receiver Input Irradiance E
age
emin
E
emin
E
emax
emax (low)
V
OL
V
OH
Output Current VOL < 0.8V 4 mA Rise Time t Fall Time t Rxd Pulse Width of Output Signal P
f
Jitter Latency t
r f w
t
j
L
Notes a. T b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
= 25_C, VCC = 2.7 – 5.5 V unless otherwise noted.
amb
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. I e. BER = 10
(peak) = 210 mA (At IRED Anode pin)
IRED
–8
(IrDA specification).
f. Leading edge of output signal.
α = ±15_, SIR Mode, SC = LOW 20 35 α = ±15_, SIR Mode, SC = LOW,
V
= 2.7V
CC1
α = ±15_, SIR Mode, SC = HIGH 6 10 15 α = ± 90_, SIR Mode, V α = ± 90_, SIR Mode, V
= 5V 3.3 5
CC1
= 3V 8 15
CC1
SC = HIGH or LOW 4 mW/m
Active, C = 15 pF, R = 2.2 k 0.5 0.8 V
Non–active, C = 15 pF, R = 2.2 k VCC–0.5
C = 15 pF, R = 2.2 k 20 1400 C = 15 pF, R = 2.2 k 20 200
115.2 kbit/s mode 1.41 8
Over a period of 10 bit, 115.2 kbit/s 2
Min
b
TypcMax
100 500 µs
b
Unit
35
mW/m
2
2
m
2
ns
µs
4 Pending—Rev . A, 03-Apr-98
Pre-Release Information
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