Telefunken TLME3100 Datasheet

TLME3100
Vishay Telefunken
High Intensity SMD LED High Intensity SMD LED
Yellow TLME3100 AlInGaP on GaAs 60
Description
This device has been designed to meet the increasing demand for AlInGaP technology. The package of the TLME3100 is the P–LCC–2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is surrounded with a white thermoplast. The reflector inside this package is filled up with clear epoxy.
Features
±
ö
°
D
SMD LED with exceptional brightness
D
Luminous intensity categorized
D
Compatible with automatic placement equipment
D
EIA and ICE standard package
D
Compatible with infrared, vapor phase and wave solder processes according to CECC
D
Available in 8 mm tape
D
Low profile package
D
Non-diffused lens: excellent for coupling to light pipes and backlighting
D
Low power consumption
D
Luminous intensity ratio in one packaging unit I
Vmax/IVmin
x 2.0
Applications
Automotive: backlighting in dashboards and switches Telecommunication: indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use
94 8553
Document Number 83038 Rev. A1, 04-Feb-99
www.vishay .de FaxBack +1-408-970-5600
1 (6)
TLME3100
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
TLME3100
Parameter Test Conditions Symbol Value Unit Reverse voltage V DC forward current T Surge forward current tp 10 ms I Power dissipation T Junction temperature T Operating temperature range T Storage temperature range T Soldering temperature t 5 s T Thermal resistance junction/ambient mounted on PC board
Optical and Electrical Characteristics
T
= 25_C, unless otherwise specified
amb
Yellow (TLME3100 )
60°C I
amb
60°C P
amb
(pad size > 16 mm
2
)
R
R
F
FSM
V
amb
stg
sd
thJA
5 V
30 mA
0.1 A 80 mW
j
100 –40 to +100 –55 to +100
260
°
C
°
C
°
C
°
C
400 K/W
Parameter Test Conditions T ype Symbol Min Typ Max Unit Luminous intensity IF = 10 mA I Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA
V
l
d
l
p
25 50 mcd
581 588 594 nm
590 nm Angle of half intensity IF = 10 mA ϕ ±60 deg Forward voltage IF = 20 mA V Reverse voltage IR = 10 mA V Junction capacitance VR = 0, f = 1 MHz C
Typical Characteristics (T
125
100
75
50
V
25
P – Power Dissipation ( mW )
= 25_C, unless otherwise specified)
amb
60
50
40
30
20
F
I – Forward Current ( mA )
10
F
R
j
5 V
2 2.6 V
15 pF
0
020406080
T
95 10887
Figure 1 Power Dissipation vs. Ambient Temperature
www.vishay .de FaxBack +1-408-970-5600 Document Number 83038 2 (6)
– Ambient Temperature ( °C )
amb
100
0
020406080
T
95 10894
Figure 2 Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
Rev. A1, 04-Feb-99
100
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