Telefunken TCUT1200X01 Datasheet

TCUT1200X01

Vishay Telefunken

Subminiature Dual Channel Optical Sensor with
Phototransistor Output

Description

This device has a compact construction where the
emitting-light source and the detector are located
face-to-face on the same optical axes.
The operating wavelength is 950 nm. The detector
side incorporates 2 phototransistors. Distance of both
channels is 0.8 mm.

Applications

D

Accurate position sensor for encoder,

D

Detection for motion direction,

D

Detection of motor speed and direction where high
reliability performance is required

14849

Features

D

Dual channel with 0.3 mm aperture

D

Channel 1 to channel 2 distance 0.8 mm
(optical center)

D

Gap 2 mm

D

Package height: 4 mm

D

Surface Mountable Technology (SMD)

D

Parts shipped taped and reeled 2000 pcs/ reel

D

Soldering method according to
CECC00802 table 1, class B or C

D

Option X01:
High rel. devices for advanced applications

A

Cath

Cath

Order Instruction

Ordering Code Resolution (mm) / Aperture (mm) Remarks

TCUT1200X01 0.24 / 0.3

Coll

E

E

13894

Rev. A3, 01–Jun–99

www.vishay.comDocument Number 83756

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TCUT1200X01

Vishay Telefunken

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T

Output (Detector)

Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Power dissipation T

Coupler

Parameter Test Conditions Symbol Value Unit
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s T

≤ 25°C P

amb

≤ 25°C P

amb

≤ 25°C P

amb

R

F

FSM

V

CEO
ECO

C

V

tot

amb

stg

sd

5 V

25 mA

100 mA

75 mW

70 V

7 V
20 mA
75 mW

150 mW

–40 to +85

–40 to +100

230

°

C

°

C

°

C

www.vishay.com

2 (9) Rev. A3, 01–Jun–99

Document Number 83756

TCUT1200X01

Vishay Telefunken

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 15 mA V
Reverse current VR = 5 V I
Junction capacitance VR = 0 V, f = 1 MHz C

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector emitter cut-off

VCE = 25 V, IF = 0, E = 0 I

current

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector current per

channel
Collector emitter

saturation voltage

VCE = 5 V, IF = 15 mA I

IF = 15 mA, IC = 0.05 mA V

F

R

j

CEO
ECO

CEO

C

CEsat

1.2 1.5 V
10

50 pF

70 V

7 V

10 100 nA

300 500

0.4 V

m

A

m

A

200

150

100

50

Emitter / Detector

tot

P – Total Power Dissipation ( mW )

0

0 255075100

T

– Ambient Temperature ( °C )13664

amb

Figure 1. Derating diagram

Rev. A3, 01–Jun–99

Sensor

I

= 15 mA + VC = 5 V

F

10 k

Figure 2. Application example

V

W

E

GNDGND

74HCT14

U

Q

13887

www.vishay.comDocument Number 83756

3 (9)