Telefunken TCST5123 Datasheet
TCST5123
Vishay Telefunken
Transmissive Optical Sensor with Phototransistor
Output
Description
These devices have a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm.
The detector consists of a phototransistor. Due to the
special construction, the depth of the gap is equal to
a package height of 4 mm.
Applications
D
Position sensor for shaft encoder,
D
Detection of opaque material such as paper,
IBM cards, magnetic tapes etc.,
D
Limit switch for mechanical motions in VCR,
D
General purpose – wherever the space is limited
Features
D
Gap 2.8 mm
D
Package height: TCST5123: 4.0 mm
D
Plastic polycarbonate housing
D
Subminiature construction
D
Snap-in mounting mechanisms
D
Current Transfer Ratio (CTR) of typical 20%
CC
EA
Top view
96 12253
96 11968
Order Instruction
Ordering Code Resolution (mm) / Aperture (mm) Remarks
TCST5123 0.6 / non Snap-in construction
Rev. A3, 08–Jun–99
www.vishay.comDocument Number 83766
1 (7)
TCST5123
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
j
CEO
ECO
C
V
j
6 V
60 mA
3 A
100 mW
100
°
C
70 V
7 V
100 mA
150 mW
100
°
C
Coupler
Parameter Test Conditions Symbol Value Unit
Total power dissipation T
≤ 25°C P
amb
Operation temperature range T
Storage temperature range T
Soldering temperature t ≤ 3 s distance 1.5 mm from case T
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 60 mA V
Junction capacitance VR = 0, f = 1 MHz C
F
j
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current VCE = 25 V, IF = 0, E = 0 I
CEO
ECO
CEO
70 V
7 V
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector current
Crosstalk
2)
Collector emitter saturation voltage
1)
Without shield
2)
With shield, see mechanical setup
1)
VCE = 5 V, IF = 20 mA I
VCE = 5 V, IF = 20 mA I
IF = 20 mA, IC = 0.025 mA V
C
CX
CEsat
2.4 4.0 mA
tot
amb
stg
sd
250 mW
–25 to +85
–55 to +100
260
1.25 1.5 V
50 pF
100 nA
50
°
°
°
m
0.4 V
C
C
C
A
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2 (7) Rev. A3, 08–Jun–99
Document Number 83766
TCST5123
Vishay Telefunken
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Turn-on time IC = 1 mA, VCE = 5 V, RL = 100 W (see figure 1) t
C CE L
Turn-off time
on
f
off
15.0
10.0
m
s
m
s
0
RG = 50 W
t
p
= 0.01
T
= 50 ms
t
p
95 10890
95 10797
W
+ 5 V
IC = 2 mA;
Channel I
Channel II
adjusted through
input amplitude
Oscilloscope
R
y 1 M
W
L
C
x 20 pF
L
I
F
0
I
C
100%
90%
10%
0
t
r
t
d
t
on
t
p
t
d
t
r
t
(= td + tr) turn-on time
on
pulse duration
delay time
rise time
t
p
t
s
t
off
t
s
t
f
t
(= ts + tf) turn-off time
off
I
I
F
F
50
W
100
Figure 1. Test circuit
0.8 mm 7.2 mm
t
f
96 11698
t
t
storage time
fall time
Figure 3. Switching times
opt. Achse
Figure 2. Mechanical setup
Rev. A3, 08–Jun–99
1.4 mm
www.vishay.comDocument Number 83766
3 (7)
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