TCST110. up to TCST230.
Vishay Telefunken
Transmissive Optical Sensor with Phototransistor
Output
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm. The detector consists of a
phototransistor.
B)
Applications
D
Contactless optoelectronic switch, control and
counter
Features
D
Compact construction
D
No setting efforts
D
Polycarbonate case protected against
ambient light
D
2 case variations
D
3 different apertures
D
CTR selected in groups
(regarding fourth number of type designation)
+
E
Order Instruction
Ordering Code Resolution (mm) / Aperture (mm) Remarks
TCST1103
TCST2103
TCST1202
TCST2202
TCST1300
TCST2300
A)
B)
A)
B)
A)
B)
0.6 / 1.0 No mounting flags
0.4 / 0.5 No mounting flags
0.2 / 0.25 No mounting flags
A)
15136
95 10796
D
+
7.6
0.3”
Top view
With two mounting flags
With two mounting flags
With two mounting flags
Rev. A5, 08–Jun–99
www.vishay.comDocument Number 83764
1 (9)
TCST110. up to TCST230.
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CEO
ECO
C
CM
V
6 V
60 mA
3 A
100 mW
j
100
°
C
70 V
7 V
100 mA
200 mA
150 mW
j
100
°
C
Coupler
Parameter Test Conditions Symbol Value Unit
Total power dissipation T
Operating temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 5 s T
≤ 25°C P
amb
tot
amb
stg
sd
250 mW
–55 to +85
–55 to +100
260
°
C
°
C
°
C
www.vishay.com
2 (9) Rev. A5, 08–Jun–99
Document Number 83764
TCST110. up to TCST230.
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 60 mA V
Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 10 mA V
Collector dark current VCE = 25 V, IF = 0, E = 0 I
Coupler
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
Current transfer ratio VCE = 5 V,
I
= 20 mA
F
F
Collector current VCE = 5 V,
I
= 20 mA
F
F
Collector emitter
saturation voltage
IF = 20 mA,
I
= 1 mA
C
IF = 20 mA,
I
= 0.5 mA
C
IF = 20 mA,
I
= 0.1 mA
C
Resolution, path of the
I
= 10 to 90% TCST1103,
Crel
shutter crossing the
radiant sensitive zone
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
F
CEO
ECO
CEO
j
70 V
7 V
1.25 1.6 V
50 pF
100 nA
CTR 10 20 %
CTR 5 10 %
CTR 1.25 2.5 %
V
CEsat
V
CEsat
V
CEsat
I
C
I
C
I
C
2 4 mA
1 2 mA
0.25 0.5 mA
0.4 V
0.4 V
0.4 V
s 0.6 mm
s 0.4 mm
s 0.2 mm
Rev. A5, 08–Jun–99
www.vishay.comDocument Number 83764
3 (9)