Telefunken TCRT5000L, TCRT5000 Datasheet
TCRT5000(L)
Vishay Telefunken
Reflective Optical Sensor with Transistor Output
Description
The TCRT5000(L) has a compact construction where
the emitting-light source and the detector are arranged
in the same direction to sense the presence of an object by using the reflective IR beam from the object.
The operating wavelength is 950 mm. The detector
consists of a phototransistor.
Applications
D
Position sensor for shaft encoder
D
Detection of reflective material such as paper,
IBM cards, magnetic tapes etc.
D
Limit switch for mechanical motions in VCR
D
General purpose – wherever the space is limited
94 9442
15116
Features
D
Snap-in construction for PCB mounting
D
Package height: 7 mm
D
Plastic polycarbonate housing construction
which prevents crosstalk
D
L = long leads
D
Current Transfer Ratio (CTR) of typical 10%
C
E
Top view
A
C
Order Instruction
Ordering Code Sensing Distance Remarks
TCRT5000 12 mm Leads (3.5 mm)
TCRT5000(L) 12 mm Long leads (15 mm)
Rev. A4, 03–Jul–00
www.vishay.comDocument Number 83760
1 (8)
TCRT5000(L)
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 mA I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 55°C P
amb
R
F
FSM
V
CEO
ECO
C
V
5 V
60 mA
3 A
100 mW
j
100
°
C
70 V
5 V
100 mA
100 mW
j
100
°
C
Sensor
Parameter Test Conditions Symbol Value Unit
Total power dissipation T
Operation temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
≤ 25°C P
amb
tot
amb
stg
sd
200 mW
–25 to +85
–25 to +100
260
°
C
°
C
°
C
www.vishay.com
2 (8) Rev. A4, 03–Jul–00
Document Number 83760
TCRT5000(L)
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 60 mA V
Junction capacitance VR = 0 V, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current VCE = 20 V, IF = 0, E = 0 I
Sensor
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector current VCE = 5 V, IF = 10 mA,
D = 12 mm
Collector emitter
saturation voltage
1)
See test circuit
2)
Test surface: Mirror (Mfr. Spindler a. Hoyer, Part No 340005)
IF = 10 mA, IC = 0.1 mA,
D = 12 mm
V
CEsat
IC
F
CEO
ECO
CEO
1,2)
1.25 1.5 V
j
50 pF
70 V
7 V
10 200 nA
0.5 1 2.1 mA
1,2)
0.4 V
Rev. A4, 03–Jul–00
94 9226
I
F
Figure 1. Test circuit
I
C
A
96 12314
V
CC
Flat Mirror
∅ = 22.5 mm
Rem. 2
Figure 2. Test circuit
d = working distance
D = Distance
12 ±
7.0 ± 0.2
= package height
www.vishay.comDocument Number 83760
0.2
3 (8)
Loading...