Telefunken TCNT1000 Datasheet

Vishay Telefunken

Subminiature Reflective Optical Sensor with
Phototransistor Output

Description

The TCNT1000 have a compact construction where
the emitting-light source and the detector are arranged
in the same direction to sense the presence of an
object by using the reflective IR-beam from the object.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.

Applications

D

Accurate position sensor for shaft encoder

D

Detection of reflective material such as paper,
IBM cards, magnetic tapes etc.

D

Suitable for copy machines, printers, fax machines

TCNT1000

15143

A

Features

D

Package height: 1.5 mm

D

Parts shipped taped and reeled 1000 pcs/ reel

D

Soldering method according to
CECC00802 table 1, class B or C

D

Surface Mountable Technology (SMD)

Cath

Top view

Order Instruction

Ordering Code Sensing Distance Remarks

TCNT1000 1 mm

E

15142

Coll

Rev. A2, 25–Jul–00

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TCNT1000

Vishay Telefunken

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Pulse forward current tp = 0.1 ms; t
Power dissipation T

≤ 25°C P

amb

Output (Detector)

Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Power dissipation T

≤ 25°C P

amb

Coupler

Parameter Test Conditions Symbol Value Unit
Ambient temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s Tsd

1)

1.6 mm distance from Body

= 0.01 I

p / T

R

F

FP

V

CEO
ECO

C

V

amb

stg

5 V

50 mA

1 A

75 mW

30 V

5 V

50 mA

100 mW

–20 to +70
–30 to +80

1)

260

°

C

°

C

°

C

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2 (8) Rev. A2, 25–Jul–00

Document Number 83778

TCNT1000

Vishay Telefunken

Electrical Characteristics (T

= 25°C)

amb

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 20 mA V
Reverse current VR = 5 V I

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector emitter cut-off

VCE = 20 V, IF = 0, E = 0 I

current
Cross talk current VCE = 5 V, IF =10 mA

(see Figure 1)

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector current VCE = 5 V, IF = 10 mA I
Rise time VS = 2 V, IC = 1 mA,

R

= 1 k

W

L

Fall time VS = 2 V, IC = 1 mA,

R

= 1 k

W

1)

Working distance to object: d = 1 mm; object: Flat mirror

L

CEO
ECO

CEO

ICX

C

F

R

1.2 1.6 V
10

m

A

30 V

5 V

100 nA

1)

1)

t

r

t

f

100

20

20

200 nA

m

m

m

A

s

s

Rev. A2, 25–Jul–00

Object:
Flat Mirror

d = working distance 1 mm

15190

Figure 1. Test circuit

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