TCDT1120(G) Series
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The TCDT1 120(G) series consists of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
RMS
)
14827
nc
C
65
1
2
A (+) C (–) nc
E
4
94 9222
3
Order Instruction
Ordering Code CTR Ranking Remarks
TCDT1120/ TCDT1120G
TCDT1122/ TCDT1122G
TCDT1123/ TCDT1123G
TCDT1124/ TCDT1124G
1)
G = Leadform 10.16 mm; G is not market on the body
1)
1)
1)
1)
63 to 125%
100 to 200%
160 to 320%
>40%
Rev. A3, 11–Jan–99224
Features
TCDT1120(G) Series
Vishay Telefunken
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 12399
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
= 6 kV peak
V
IOTM
D
Isolation test voltage (partial discharge test
voltage) V
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 1.6 kV
pd
= 600 V
(848 V peak)
RMS
D
Rated recurring peak voltage (repetitive)
= 600 V
V
IORM
D
Creepage current resistance according to
VDE 0303/IEC 1 12
Comparative Tracking Index: CTI = 275
D
Thickness through insulation ≥ 0.75 mm
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2 (DIN/VDE 01 10 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.3 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
Base not connected
D
CTR offered in 4 groups
D
Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
RMS
F
FSM
R
5 V
60 mA
3 A
V
j
100 mW
125
°
C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector base voltage V
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
≤ 25°C P
amb
Junction temperature T
CBO
CEO
ECO
C
CM
V
j
90 V
90 V
7 V
50 mA
100 mA
150 mW
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Isolation test voltage (RMS) t = 1 min V
Total power dissipation T
≤ 25°C P
amb
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
IO
tot
amb
stg
sd
Rev. A3, 11–Jan–99 225
3.75 kV
250 mW
–55 to +100
–55 to +125
260
°
C
°
C
°
C
TCDT1120(G) Series
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector base voltage IC = 100 mA V
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector emitter cut-off
VCE = 20 V, If = 0 I
current
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA,
Coupling capacitance f = 1 MHz C
IF = 10 mA, IC = 1 mA V
R
L
= 100
W
F
j
CBO
CEO
ECO
CEO
CEsat
f
c
k
1.25 1.6 V
50 pF
90 V
90 V
7 V
150 nA
0.3 V
110 kHz
0.3 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = 1 mA TCDT1120(G) CTR 0.10
TCDT1122(G) CTR 0.15
TCDT1123(G) CTR 0.30
TCDT1124(G) CTR 0.60
VCE = 5 V, IF = 10 mA TCDT1120(G) CTR 0.40
TCDT1122(G) CTR 0.63 1.25
TCDT1123(G) CTR 1 2.00
TCDT1124(G) CTR 1.60 3.20
Rev. A3, 11–Jan–99226