Telefunken TCDT1103G, TCDT1103, TCDT1102G, TCDT1102, TCDT1101 Datasheet

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TCDT1100(G) Series
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The TCDT1100(G) series consists of a photo­transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
Applications
Circuits for safe protective separation against electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I – IV at mains voltage 300 V
D
For appl. class I – III at mains voltage 600 V according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according to the following equipment standards:
D
VDE 0884 Optocoupler for electrical safety requirements
D
IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 V
D
VDE 0804 Telecommunication apparatus and data processing
D
IEC 65 Safety for mains-operated electronic and related household apparatus
RMS
)
14827
nc
C
65
1
2
A (+) C (–) nc
E
4
94 9222
3
Order Instruction
Ordering Code CTR Ranking Remarks TCDT1100/ TCDT1100G TCDT1101/ TCDT1101G TCDT1102/ TCDT1102G TCDT1103/ TCDT1103G
1)
G = Leadform 10.16 mm; G is not market on the body
1)
1)
1)
1)
> 40%
40 to 80%
63 to 125%
100 to 200%
Rev. A3, 11–Jan–99208
Features
TCDT1100(G) Series
Vishay Telefunken
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
D
Creepage current resistance according to VDE 0303/IEC 1 12 Comparative Tracking Index: CTI = 275
D
Thickness through insulation 0.75 mm
Certificate number 12399
D
Underwriters Laboratory (UL) 1577 recognized, file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
= 6 kV peak
V
IOTM
D
Isolation test voltage (partial discharge test voltage) V
D
Rated isolation voltage (RMS includes DC) V
IOWM
D
Rated recurring peak voltage (repetitive) V
IORM
= 1.6 kV
pd
= 600 V
= 600 V
(848 V peak)
RMS
RMS
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2 (DIN/VDE 0110/ resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
CTR offered in 4 groups
D
Base not connected
D
Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit Reverse voltage V Forward current I Forward surge current tp 10 ms I Power dissipation T Junction temperature T
25°C P
amb
R
F
FSM
V
5 V
60 mA
3 A
100 mW
j
125
°
C
Output (Detector)
Parameter Test Conditions Symbol Value Unit Collector emitter voltage V Emitter collector voltage V Collector current I Collector peak current tp/T = 0.5, tp 10 ms I Power dissipation T
25°C P
amb
Junction temperature T
CEO ECO
C
CM
V
j
32 V
7 V
50 mA 100 mA 150 mW 125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit AC Isolation test voltage (RMS) t = 1 min V Total power dissipation T
25°C P
amb
Ambient temperature range T Storage temperature range T Soldering temperature 2 mm from case t 10 s T
IO tot
amb
stg
sd
Rev. A3, 11–Jan–99 209
3.75 kV 250 mW
–55 to +100 –55 to +125
260
°
C
°
C
°
C
TCDT1100(G) Series
C F
CE F
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 50 mA V Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage IC = 1 mA V Emitter collector voltage IE = 100 mA V Collector emitter cut-off
current
VCE = 20 V, If = 0, E = 0 I
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter
saturation voltage Cut-off frequency VCE = 5 V, IF = 10 mA,
Coupling capacitance f = 1 MHz C
IF = 10 mA, IC = 1 mA V
R
L
= 100
W
F
j
CEO ECO
CEO
CEsat
f
c
k
1.25 1.6 V 50 pF
32 V
7 V
200 nA
0.3 V
110 kHz
0.3 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = 10 mA TCDT1100(G) CTR 0.40
TCDT1101(G) CTR 0.40 0.80 TCDT1102(G) CTR 0.63 1.25 TCDT1103(G) CTR 1.00 2.00
Rev. A3, 11–Jan–99210
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