Datasheet TC4432EPA, TC4432EOA, TC4432EJA, TC4432CPA, TC4432COA Datasheet (TelCom Semiconductor)

1.5A HIGH-SPEED 30V MOSFET DRIVERS

1

TC4431
TC4432

FEATURES

■ High Peak Output Current ............................... 1.5A

■ Wide Operating Range .............................5V to 30V

■ High Capacitive Load

Drive Capability ......................... 1000 pF in 25nsec

■ Short Delay Time ................................ <78nsec Typ

■ Low Supply Current

— With Logic “1” Input ................................. 2.5mA

— With Logic “0” Input ................................. 300µA

■ Low Output Impedance ....................................... 7Ω

■ Latch-Up Protected .......... Will Withstand >300mA

Reverse Current

■ ESD Protected....................................................4 kV

ORDERING INFORMATION

Temperature

Part No. Package Range

TC4431COA 8-Pin SOIC 0°C to +70°C
TC4431CPA 8-Pin Plastic DIP 0°C to +70°C
TC4431EJA 8-Pin CerDIP – 40°C to +85°C
TC4431EOA 8-Pin SOIC – 40°C to +85°C
TC4431EPA 8-Pin Plastic DIP – 40°C to +85°C

GENERAL DESCRIPTION

The TC4431/4432 are 30V CMOS buffer/drivers suit­able for use in high-side driver applications. They will not
latch up under any conditions within their power and voltage
ratings. They can accept, without damage or logic upset, up
to 300mA of reverse current (of either polarity) being forced
back into their outputs. All terminals are fully protected
against up to 4kV of electrostatic discharge.

Under-voltage lockout circuitry forces the output to a
"low" state when the input supply voltage drops below 7V.
Maximum startup VDD bias voltage threshold is 10V. For
operation at lower voltages, the LOCK DIS, Pin 3 can be
grounded to disable the lockout and start-up circuit. The
under-voltage lockout and start-up circuit gives brown out
protection when driving MOSFETS.

Temperature

Part No. Package Range

TC4432COA 8-Pin SOIC 0°C to +70°C
TC4432CPA 8-Pin Plastic DIP 0°C to +70°C
TC4432EJA 8-Pin CerDIP – 40°C to +85°C
TC4432EOA 8-Pin SOIC – 40°C to +85°C
TC4432EPA 8-Pin Plastic DIP – 40°C to +85°C

2

3

4

5

FUNCTIONAL BLOCK DIAGRAM

3

LOCK DIS.

2 mA

INPUT

2

GND

4, 5

EFFECTIVE

INPUT

C = 10pF

TELCOM SEMICONDUCTOR, INC.

250mV

Inverted

TC4431

Non-Inverted

TC4432

UV LOCK

TC4431/32

Inverting/Noninverting

8

V

DD

7

OUT
OUT

6

TC4431/2-8 10/21/96

4-257

6

7

8

TC4431
TC4431

1.5A HIGH-SPEED 30V MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Operating Temperature Range

C Version...............................................0°C to +70°C

Supply Voltage ............................................................36V

Input Voltage (Note 1) ........................ V

+ 0.3V to GND

DD

Maximum Chip Temperature................................. +150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R

ELECTRICAL CHARACTERISTICS: T

................................................ 150°C/W

θJ-A

.................................................. 50°C/W

θJ-C

................................................... 125°C/W

θJ-A

..................................................... 42°C/W

θJ-C

................................................... 250°C/W

θJ-A

..................................................... 75°C/W

θJ-C

= +25°C with 5.0 ≤ V

A

E Version ...........................................- 40°C to +85°C

Package Power Dissipation (TA ≤ 70°C )

Plastic .............................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

≤ 30V, unless otherwise specified.

DD

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current (Note 1) 0V ≤ VIN ≤ V

(16V MAX) –1 — 1 µA

DD

Output

V
V
R
I

PK

I

REV

OH
OL
O

High Output Voltage I

= 100mA V

OUT

– 1.0 V

DD

– 0.8 — V

DD

Low Output Voltage — — 0.025 V
Output Resistance (VOL)V

= 30V, IO = 10mA — 7 10 Ω

DD

Peak Output Current Source: VDD = 30V — 3.0 — A

Sink: VDD = 30V — 1.5 —

Latch-Up Protection Duty Cycle ≤ 2% 0.3 — — A
Withstand Reverse Current t ≤ 300 µsec

Switching Time (Note 2)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1 — 25 40 nsec
Fall Time Figure 1 — 33 50 nsec
Delay Time Figure 1 — 62 80 nsec
Delay Time Figure 1 — 78 90 nsec

Power Supply

I

S

V

S

V

DO

Power Supply Current VIN = 3V — 2.5 4 mA

VIN = 0V — 0.3 0.4
Start-up Threshold — 8.4 10 V
Drop-out Threshold (Note 3) 7 7.7 — V

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TELCOM SEMICONDUCTOR, INC.

1.5A HIGH-SPEED 30V MOSFET DRIVERS

1

TC4431
TC4432

ELECTRICAL CHARACTERISTICS (Cont.): Specifications measured over operating temperature range

with 5.0V ≤ V

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

Switching Time (Note 2)
t

R

t

F

t

D1

t

D2

Power Supply

I

S

V

S

V

DO

NOTES: 1. For inputs >16V, add a 1kΩ resistor in series with the input. See graph on page 4 for input current.

2. Switching times are guaranteed by design.

3. For operation below 7V, the LOCK DIS., Pin 3 can be grounded to disable the lockout and start-up circuit.

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current (Note 1) 0V ≤ VIN ≤ V

High Output Voltage I
Low Output Voltage — — 0.025 V
Output Resistance VDD = 30V, IO = 10mA — — 12 Ω

Rise Time Figure 1 — — 60 nsec
Fall Time Figure 1 — — 70 nsec
Delay Time Figure 1 — — 100 nsec
Delay Time Figure 1 — — 110 nsec

Power Supply Current VIN = 3V — — 6 mA

Start-up Threshold — 8.4 10 V
Drop-out Threshold (Note 3) 7 7.7 — V

= 100mA V

OUT

VIN = 0V — — 0.7

(16V MAX) – 1 — 1 µA

DD

≤ 30V, unless otherwise specified.

DD

– 1.2 — — V

DD

2

3

4

5

PIN CONFIGURATIONS

LOCK DIS

V

DD

IN

GND

1

1
2

TC4431

3
4

2

INVERTING NONINVERTING

8

V

DD

OUT

7
6

OUT

5

GND

7

6

NOTE: SOIC pinout is identical to DIP.

V

DD

IN

LOCK DIS

GND

2
3
4

2

TC4432

8

V

DD

OUT

7

OUT

6

GND

5

7

6

6

7

8

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4-259

TC4431
TC4431

1.5A HIGH-SPEED 30V MOSFET DRIVERS

INPUT

LOCK DIS.

VDD= 30V

4.7 µF

1, 8

7

2

6

3

4, 5

INPUT: 100 kHz, square wave,

t

= t

FALL

≤ 10nsec

RISE

+5V

INPUT

10%

0.1 µF

0V

V

DD

t

90%

OUTPUT

OUTPUT

0V

CL = 1000 pF

+5V

INPUT

10%

0V

V

DD

t

OUTPUT

0V

Figure 1. Switching Time Test Circuit

D1

t

F

10%

Inverting Driver

90%

D1

t

R

10%

Noninverting Driver

t

D2

90%

90%

t

D2

90%

10%

t

R

10%

90%

t

F

TYPICAL CHARACTERISTICS

Supply Current vs. Capacitive Load

60

V = 12V

DD

50

40

(mA)

30

SUPPLY

I

20

10

0

100 1000 10,000

Input Current vs. Input Voltage

50
45
40
35
30
25
20
15

Input Curent (mA)

10

5
0

3 6 12 15 18 21 24 27 309

C (pF)

LOAD

WITHOUT 1K RES.

WITH 1K RES.

Input Voltage (VIN)

2 MHz

900 kHz

600 kHz

200 kHz
20 kHz

150

T

F

125

100

75

Time (nsec)

50

T

R

25

0

3 6 12 15 18 21 24 27 309

300

T

250

D1

200

150

T

D2

Time (nsec)

100

50

0

3 6 12 15 18 21 24 27 309

Rise/Fall Time vs. V

C

= 1000pf at 258C

LOAD

V

(VOLTS)

DD

TD1 and TD2 Delay vs. V

C

= 1000pf at 258C

LOAD

V

(VOLTS)

DD

DD

DD

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