Taitron 2N7002 Schematic [ru]

T

Enhancement Mode
MOSFET (N-Channel)

Enhancement Mode MOSFET (N-Channel)

Features

• High density cell design for low R

• Voltage controlled small signal switch

• Rugged and reliable

• High saturation current capability

• RoHS Compliance

Mechanical Data

Case:

Terminals:

Weight:

Maximum Ratings (T

SOT-23, Plastic Package

Solderable per MIL-STD-202G, Method 208

0.008 gram

=25ºC unless noted otherwise)

Ambient

DS(ON)

2N7002

SOT-23

Symbol Description 2N7002 Unit Conditions

VDSS
VDGR
VGSS

VGSM

ID

IDM

PD

RthJA

PD

RthJA

TJ

TSTG

Drain-Source Voltage 60 V

Drain-Gate Voltage (RGS≤1MΩ) 60 V

Gate-Source Voltage Continuous ±20 V

Gate-Source Voltage Non-repetitive (tp≤50µS) ±40 V

Drain Current Continuous (Note 1)

Drain Current Pulsed (Note 2) 800 mA

Total Device Dissipation FR-5 Board (Note 3)

Max. Thermal Resistance, Junction to Ambient 556 ° C/W

Total Device Dissipation Alumina Substrate (Note 4)

Max. Thermal Resistance, Junction to Ambient 417 ° C/W

Junction Temperature

Storage Temperature Range

115 mA TC=25 ˚C

75 mA T

225 mW TA=25 ˚C

1.8 mW/° C Derate above 25 ˚C

300 mW TA=25 ˚C

2.4 mW/° C Derate above 25 ˚C

-55 to +150 ° C

-55 to +150 ° C

C=100 ˚C

Note: 1. The Power Dissipation of thepackage may result in a lower continuous drain current.

TAITRON COMPONEN

Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060

Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415

S INCORPORATED www.taitroncomponents.com

Rev. B/AH

Page 1 of 6

)

Enhancement Mode MOSFET (N-Channel

2N7002

2. PulseTest: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.

3. FR-5=1.0 x 0.75 x 0.062 in.

4. Alumina=0.4 x 0.3 x 0.025 in 99.5% alumina.

Electrical Characteristics

(T

=25ºC unless noted otherwise)

Ambient

Off Characteristics

Symbol Description Min. Typ. Max. Unit Conditions

V(BR)DSS

IDSS

IGSSF
IGSSR

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage, Forward - - 0.1 V

Gate-Body Leakage, Reverse - - -0.1

60 - - V V

- - 1 VDS=60V, VGS=0V

- - 500 V
μA

GS=0V, ID=10µA

DS=60V, VGS=0V, TJ=125 ˚C

DS=0V, VGS=20V

DS=0V, VGS=-20V

V

On Characteristics (Note 5)

Symbol Description Min. Typ. Max. Unit Conditions

VGS(th)

Gate Threshold Voltage 1.0 1.6 2.0 V VDS=VGS, ID=250μA

- 1.4 7.5 VGS=10V, ID=500mA

RDS(ON)

VDS(ON)

ID(ON)

gFS

Drain-Source ON Resistance

Drain-Source ON Voltage

On State Drain Current 500 2700 - mA

Forward Transconductance

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- 1.7 13.5 VGS=10V, ID=500mA, TJ=125 ˚C

- 1.8 7.5 VGS=5V, ID=50mA

- 2.4 13.5

- 0.6 3.75 VGS=10V, ID=500mA

- 0.09 0.375

80 320 - mS V

Ω

V

V

GS=5V, ID=50mA, TJ=125 ˚C

V

GS=5V, ID=50mA

V

GS=10V,

DS≥2VDS(ON)

V

DS≥2VDS(ON), ID=200mA

Rev. B/AH

Page 2 of 6

)

Enhancement Mode MOSFET (N-Channel

2N7002

Dynamic Characteristics (T

Symbol Description Min. Typ. Max. Unit Conditions

Ciss
Crss

Coss

Input Capacitance - 17 50

Reverse Transfer Capacitance - 2.5 5.0

Output Capacitance - 10 25

=25ºC unless noted otherwise)

Ambient

pF

DS=25V, VGS=0V,

V

f=1MHz

Switching Characteristics

Symbol Description Min. Typ. Max. Unit Conditions

ton
toff

Turn-On Delay Time - 7 20

Turn-Off Delay Time - 11 40

(T

=25ºC unless noted oth er wise )

Ambient

nS

V

DD=25V, RL=50Ω

D=500mA, VGS=10V,

I

R

Drain-Source Diode Ratings and Maximum Ratings

G=25Ω

Symbol Description Min. Typ. Max. Unit Conditions

ID

IDM

VSD

Continuous Drain-Source Diode Forward
Current

Pulsed Drain-Source Diode Forward Current - - 800 mA

Source-Drain Forward Voltage - 0.88 1.5 V VGS=0V, ID=115mA

Note: 5. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

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- - 115 mA

Rev. B/AH

Page 3 of 6