®
STPS3045CT/CG/CR/CP/CPI/CW/CFP
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
T
(max) 175 °C
j
V
F
2x15A
45 V
0.57 V
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
EXTREMELY FAST SWITCHING
■
■ LOW THERMAL RESISTANCE
■ INSULATED PACKAGE: TOP-3I
Insulating voltage = 2500V RMS
Capacitance = 12pF
■ AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifier suited for
SwitchModePowerSupplyandhighfrequencyDC
to DC converters.
Packaged either in TO-220AB, TO-220FPAB,
2
PAK, I2PAK, TO-247, SOT93 or TOP-3I, this
D
device is especially intended for use in low voltage, high frequency inverters, free wheeling and
polarity protection applications.
A1
A2
TO-220AB
STPS3045CT
A1
Insulated
TOP-3I
STPS3045CPI
A1
A1
K
K
K
A2
A2
K
D
2
PAK
A1
STPS3045CG
A2
A1
A2
K
I2PAK
STPS3045CR
A2
K
A2
K
A1
July 2003 - Ed: 6E
SOT-93
STPS3045CP
TO-220FPAB
STPS3045CFP
TO-247
STPS3045CW
A2
K
A1
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STPS3045CT/CG/CR/CP/CPI/CW/CFP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
dTj Rth j a
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
Repetitive peak reverse voltage 45 V
RMS forward current 30 A
Average forward
current
δ = 0.5
TO-220AB / D2PAK /
Tc = 155°C Per diode
I2PAK / SOT-93 / TO-247
TO-220FPAB Tc = 130°C
Per device
TOP-3I Tc = 150°C
Surge non repetitive forward current tp= 10 ms sinusoidal 220 A
Repetitive peak reverse current tp= 2 µs square
F = 1kHz
Non repetitive peak reverse current tp = 100 µs square 3 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 6000 W
Storage temperature range -65 to +175 °C
Maximum operating junction temperature * 175 °C
j
<
thermal runaway condition for a diode on its own heatsink
−1()
Junction to case TO-220AB / D2PAK/I2PAK Per diode
Total
SOT-93 / TO-247 Per diode
Total
TO-220FPAB Per diode
Total
TOP-3I Per diode
Total
TO-220AB / D2PAK/I2PAK
Coupling 0.10
1.60
0.85
1.5
0.8
4
3.2
2.2
1.6
SOT-93 / TO-247
TO-220FPAB Coupling 2.5
TOP-3I Coupling 1.0
15
30
1A
°C/W
A
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode 1) = P (diode1) x R
(per diode) + P (diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (Perdiode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
* Reverse leakage current Tj= 25°C VR=V
R
RRM
200 µA
Tj = 125°C 11 40 mA
V
* Forward voltage drop Tj = 125°CI
F
Tj=25°CI
Tj = 125°C I
Pulse test : * tp = 380 µs, δ <2%
= 15 A 0.5 0.57 V
F
= 30 A 0.84
F
= 30 A 0.65 0.72
F
To evaluate the conduction losses use the following equation :
P=0.42xI
2/9
F(AV)
+ 0.01 I
F2(RMS)
STPS3045CT/CG/CR/CP/CPI/CW/CFP
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
P (W)
F(AV)
12
11
10
9
8
7
6
5
4
3
2
1
0
02468101214161820
δ= 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average current versus ambient
temperature (δ = 0.5, per diode).
I (A)
F(AV)
18
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
R =R (TO-220AB, I PAK, D PAK, SOT-93, TO-247)
th(j-a) th(j-c)
R =R (TO-220FPAB)
th(j-a) th(j-c)
R =R (TOP-3I)
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
22
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
Fig. 5-1: Non repetitive surgepeak forward current
versus overload duration (maximum values, per
diode).
I (A)
M
200
180
160
140
120
100
80
60
IM
40
20
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
TO-220AB, I2PAK, D PAK, SOT-93, TO-247
t(s)
2
T =75°C
C
T =100°C
C
T =125°C
C
Fig. 5-2: Non repetitive surgepeak forward current
versus overload duration (maximum values, per
diode).
I (A)
M
160
140
120
100
80
60
40
IM
20
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
TOP-3I
T =75°C
C
T =100°C
C
T =125°C
C
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