STD17NF03L
STD17NF03L-1
N-channel 30V - 0.038Ω - 17A - DPAK/IPAK
STripFET™ II Power MOSFET
General features
Type |
VDSS |
RDS(on) |
ID |
STD17NF03L-1 |
30V |
<0.05Ω |
17A |
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STD17NF03L |
30V |
<0.05Ω |
17A |
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■Exceptional dv/dt capability
■Low gate charge at 100°C
■Application oriented characterization
■100% avalanche tested
Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Applications
■ Switching application
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3 |
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1 |
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iPAK |
DPAK |
Internal schematic diagram
Order codes
Part number |
Marking |
Package |
Packaging |
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STD17NF03L-1 |
D17NF03L@ |
IPAK |
Tube |
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STD17NF03LT4 |
D17NF03L@ |
DPAK |
Tape & reel |
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July 2006 |
Rev 3 |
1/14 |
www.st.com
Contents |
STD17NF03L - STD17NF03L-1 |
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Contents
1 |
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. 3 |
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2 |
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
4 |
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2.1 |
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
6 |
3 |
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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4 |
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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5 |
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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6 |
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
13 |
2/14
STD17NF03L - STD17NF03L-1 |
Electrical ratings |
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Table 1. |
Absolute maximum ratings |
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Symbol |
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Parameter |
Value |
Unit |
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VDS |
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Drain-source voltage (VGS = 0) |
30 |
V |
VDGR |
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Drain-gate voltage (RGS = 20 kΩ) |
30 |
V |
VGS |
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Gatesource voltage |
± 16 |
V |
ID |
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Drain current (continuous) at TC = 25°C |
17 |
A |
ID |
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Drain current (continuous) at TC = 100°C |
12 |
A |
(1) |
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Drain current (pulsed) |
68 |
A |
IDM |
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Ptot |
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Total dissipation at TC = 25°C |
30 |
W |
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Derating Factor |
0.2 |
W/°C |
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dv/dt(2) |
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Peak diode recovery avalanche energy |
7 |
V/ns |
(3) |
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Single pulse avalanche energy |
200 |
mJ |
EAS |
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Tstg |
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Storage temperature |
-55 to 175 |
°C |
Tj |
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Max. operating junction temperature |
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1.Pulse width limited by safe operating area.
2.ISD ≤17A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤TJMAX
3.Starting Tj = 25 °C, ID = 8.5A, VDD = 15V
Table 2. |
Thermal data |
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Rthj-case |
Thermal resistance junction-case max |
5.0 |
°C/W |
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Rthj-amb |
Thermal resistance junction-to ambient max |
100 |
°C/W |
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TJ |
Maximum lead temperature for soldering purpose |
275 |
°C |
3/14
Electrical characteristics |
STD17NF03L - STD17NF03L-1 |
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(TCASE=25°C unless otherwise specified) |
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Table 3. |
On/off states |
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Symbol |
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
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V(BR)DSS |
Drain-source |
ID = 250µA, VGS =0 |
30 |
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V |
breakdown voltage |
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Zero gate voltage |
VDS = Max rating |
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1 |
µA |
IDSS |
VDS = Max rating, |
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drain current (VGS = 0) |
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10 |
µA |
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TC = 125°C |
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IGSS |
Gate-body leakage |
VGS = ± 16V |
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±100 |
nA |
current (VDS = 0) |
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VGS(th) |
Gate threshold voltage |
VDS = VGS, ID = 250µA |
1 |
1.5 |
2.2 |
V |
RDS(on) |
Static drain-source on |
VGS = 10V, ID = 8.5A |
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0.038 |
0.05 |
Ω |
resistance |
VGS = 5V, ID = 8.5A |
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0.045 |
0.06 |
Ω |
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Table 4. |
Dynamic |
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Symbol |
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
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(1) |
Forward |
VDS > ID(on) x |
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12 |
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S |
gfs |
transconductance |
RDS(on)max, , ID =8.5A |
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Ciss |
Input capacitance |
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320 |
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pF |
Output capacitance |
VDS = 25V, f = 1MHz, |
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Coss |
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155 |
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pF |
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Reverse transfer |
VGS = 0 |
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Crss |
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28 |
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pF |
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capacitance |
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td(on) |
Turn-on delay time |
VDD = 15V, ID = 8.5A |
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11 |
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ns |
tr |
Rise time |
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100 |
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ns |
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RG = 4.7Ω VGS = 5V |
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td(off) |
Turn-off delay time |
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25 |
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ns |
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(see Figure 13) |
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tf |
Fall time |
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22 |
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ns |
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Qg |
Total gate charge |
VDD = 3024V, ID = 17A, |
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4.8 |
6.5 |
nC |
Qgs |
Gate-source charge |
VGS = 5V, RG = 4.7Ω |
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2.25 |
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nC |
Qgd |
Gate-drain charge |
(see Figure 14) |
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1.7 |
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nC |
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/14
STD17NF03L - STD17NF03L-1 |
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Electrical characteristics |
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Table 5. |
Source drain diode |
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Symbol |
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
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ISD |
Source-drain current |
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22 |
A |
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Source-drain current |
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(1) |
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ISDM |
(pulsed) |
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88 |
A |
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(2) |
Forward on voltage |
ISD = 17A, VGS = 0 |
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1.5 |
V |
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VSD |
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trr |
Reverse recovery time |
ISD = 17A, di/dt = 100A/µs, |
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28 |
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ns |
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Qrr |
Reverse recovery charge |
VDD = 15V, Tj = 150°C |
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18 |
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nC |
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IRRM |
Reverse recovery current |
(see Figure 15) |
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1.3 |
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A |
1.Pulse width limited by safe operating area.
2.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/14