The VNQ500 is a monolithic device designed in
STMicroelectronics VIPower M0-3 technology,
intended for driving any kind of load with one side
connected to ground.
Active current limitation, combined with latched
thermal shutdown, protect the device against
overload.
In the case of over temperature of one channel
the relative I/O pin is pulled down.
The device automatically turns off in the case of
ground pin disconnection.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Values specified in this section are for 8V<VCC<36V; -40°C< Tj <150°C, unless otherwise
stated.
Figure 3.Current and voltage conventions
I
S
V
CC
V
INn
Table 5.Power
V
I
GND
CC
OUTPUTn
I
INn
I
CE
V
CE
I/On
CE
GND
I
OUTn
V
OUTn
SymbolParameterTest conditionsMin. Typ. Max. Unit
Operating supply
V
V
USD
V
R
(1)
CC
voltage
Undervoltage
(1)
shutdown
(1)
Overvoltage shutdown36V
OV
I
= 0.25A; Tj = 25°C
On-state resistance
ON
Supply current
I
S
OUTn
= 0.25A
I
OUTn
Off-state; V
= V
V
CE
I/On
= V
V
CE
I/On
= 13V; T
V
CC
= 13V;
CC
= 0V;
= 0V;
case
= 25°C
5.51336V
345.5V
500
1000mΩmΩ
25
20
On-state (all channels ON);
mA
8
1mA
5µA
3µA
LGND
I
L(off1)
I
L(off3)
I
L(off4)
1. Per channel.
turn-off
(1)
Off-state output current V
(1)
Off-state output current
(1)
Off-state output current
Output current at
(1)
I
= 13V
V
CC
V
= V
CC
V
OUTn
I/On
V
I/On
V
CC
V
I/On
V
CC
= V
CE
= 0V
= V
OUTn
= V
OUTn
= 13V; TJ = 125°C
= V
OUTn
= 13V; TJ = 25°C
I/On
= V
GND
= 13V;
= 0V050µA
=0 V,
= 0V,
µA
µA
8/24Doc ID 9934 Rev 3
VNQ500Electrical specifications
Table 6.Switching (VCC =13V)
SymbolParameterTest conditionsMin.Typ. Max. Unit
t
on
t
off
dV
OUT
dV
OUT
1. See Figure 4: Switching time waveforms: turn-on and turn-off.
Table 7.Input and CE pin
Turn-on time RL= 52Ω from 80% V
Turn-off time RL= 52Ω to 10% V
= 52Ω from V
R
/dt
Turn-on voltage slope
(on)
/dt
Turn-off voltage slope
(off)
L
V
OUT
= 52Ω from V
R
L
V
OUT
= 10.4V
= 1.3V
(1)
(1)
OUT
OUT
SymbolParameterTest conditionsMin.Typ. Max. Unit
(1)
OUT
(1)
OUT
= 1.3V to
= 11.7V to
50µs
75µs
0.3V/µs
0.3V/µs
V
I
INL
V
INH
I
INH
V
I(hyst)
V
Table 8.Protections and diagnostics
I/O low level1.25V
INL
Low level I/O currentV
= 1.25V1µA
IN
I/O high level3.25V
High level I/O currentV
= 3.25V10µA
IN
I/O hysteresis voltage0.5V
Input clamp voltage
ICL
I
IN
= - 1mA
I
IN
(1)
= 1mA
6.8
6
- 0.7
8V
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
T
I
V
demag
t
reset
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
I/O low level default
OL
detection
Junction shutdown
TSD
temperature
DC short circuit
lim
current
Turn-off output clamp
voltage
Thermal latch reset
time
= 1mA, latched thermal
I
IN
shutdown
= 13V; R
V
CC
I
= 0.25 A; L = 50mH
OUT
Tj < T
(see third figure in
TSD
= 10mΩ0.40.60.9A
LOAD
Figure 6: Waveforms)
0.5V
150175200°C
V
CC
-48V
-
V
CC
41
CC
55
-
10µs
V
V
Doc ID 9934 Rev 39/24
Electrical specificationsVNQ500
Figure 4.Switching time waveforms: turn-on and turn-off
V
IN
V
OUT
dV
OUT
Figure 5.Driving circuit
MCU
t
on
80%
/dt
(on)
MCOUTn
Diagnostic feedback
t
r
Rprot
Rprot
Rprot
10%
(1)
(1)
t
off
t
90%
/dt
dV
OUT
(off)
t
f
t
(1)
CE
I/On
OUTPUTn
VNQ500PEP
1. See Figure 19: Application schematic.
Table 9.Truth table
ConditionsMCOUTnCEI/OnOutput_n
Normal operation
Current limitation
Over temperature
Undervoltage
L
H
L
H
L
H
L
H
StandbyXLXL
10/24Doc ID 9934 Rev 3
H
H
H
H
H
H
H
H
L
H
L
H
L
L (latched)
L
H
L
H
L
H
L
L
L
L
VNQ500Electrical specifications
Table 10.Electrical transient requirements on V
ISO T/R
Test level
CC
pin
7637/1
Test pulse
1- 25V
2+ 25V
3a- 25V
3b+ 25V
4- 4V
5+ 26.5V
1. All functions of the device are performed as designed after exposure to disturbance.
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
IIIIIIIVDelays and impedance
(1)
(1)
(1)
(1)
(1)
(1)
- 50V
+ 50V
- 50V
+ 50V
- 5V
+ 46.5V
(1)
(1)
(1)
(1)
(1)
(2)
- 75V
+ 75V
- 100V
+ 75V
- 6V
+ 66.5V
(1)
(1)
(1)
(1)
(1)
(2)
- 100V
+ 100V
- 150V
+ 100V
- 7V
+ 86.5V
(1)
(1)
(1)
(1)
(1)
(2)
2ms, 10Ω
0.2ms, 10Ω
0.1µs, 50Ω
0.1µs, 50Ω
100ms, 0.01Ω
400ms, 2Ω
Figure 6.Waveforms
1) NORMAL OPERATION
CE
MC
I/O
n
VOUT
CE
V
CC
MC
I/
On
V
OUTn
CE
T
jn
MC
I/O
n
I
OUTn
OUTn
OUTn
OUTn
n
2) UNDERVOLTAGE
VUSD
hyst
V
USD
3) SHORTED LOAD OPERATION
T
TSD
VOL
t
reset
Doc ID 9934 Rev 311/24
Electrical specificationsVNQ500
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High level input current
Figure 9.Input clamp voltageFigure 10. Turn-off voltage slope
IL(off) (uA)
0.3
0.27
0.24
0.21
0.18
0.15
0.12
0.09
0.06
0.03
Vcc=36V
0
-50 -25025 50 75 100 125 150 175
Tc ( °C )
Vicl (V)
10
9.5
8.5
7.5
6.5
5.5
Iin=1mA
9
8
7
6
5
-50 -2502550 75 100 125 150 175
Tc ( °C )
Iih (uA)
6
5.5
4.5
3.5
2.5
1.5
Vin=3.25V
5
4
3
2
1
-50 -2502550 75 100 125 150 175
Tc ( °C )
dVout/dt(on) (V/ms)
1000
900
800
700
600
500
400
300
200
100
Vcc=13V
Rl=6.5Ohm
0
-50 -25025 50 75 100 125 150 175
Tc ( °C )
Figure 11. Overvoltage shutdownFigure 12. Turn-off voltage slope
Vov (V)
60
55
50
45
40
35
30
25
20
-50 -2502550 75 100 125 150 175
Tc ( °C )
dVout/dt(off) (V/ms)
800
750
700
650
600
550
500
450
400
Vcc=13V
Rl=6.5Ohm
-50 -2502550 75 100 125 150 175
Tc ( °C )
12/24Doc ID 9934 Rev 3
VNQ500Electrical specifications
Figure 13. I
Figure 15. Input high levelFigure 16. Input hysteresis voltage
vs T
LIM
case
Ilim (A)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Vcc=13V
0
-50 -2502550 75 100 125 150 175
Tc ( °C )
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
-50 -2502550 75 100 125 150 175
Tc ( °C )
Figure 14. On-state resistance vs V
Ron (mOhm)
1000
900
800
700
600
500
400
300
200
100
0
Vhyst (V)
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -2502550 75 100 125 150 175
Iout=0.25A
Tc= 150°C
Tc= 25 °C
Tc= -40°C
5 10152025303540
Vcc (V)
Tc ( °C )
CC
Figure 17. On-state resistance vs TcaseFigure 18. Input low level
Ron (mOhm)
900
800
700
600
500
400
300
200
100
0
-50 -2502550 75 100 125 150 175
Iout=0.25A
Vcc=8V, 13V & 36V
Tc ( °C )
Vil (V)
3
2.75
2.5
2.25
2
1.75
1.5
1.25
1
-50 -25025 50 75 100 125 150 175
Tc ( °C )
Doc ID 9934 Rev 313/24
Application informationVNQ500
3 Application information
Figure 19. Application schematic
+5V
V
CC
mC
R
prot
R
prot
R
prot
Diagnostic
feedback
CE
I/0n
V
GND
GND
R
GND
D
GND
OUTPUT
D
ld
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following show how to dimension the R
1.R
2. R
where -I
≤ 600mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
maximum rating section of the device datasheet.
Power dissipation in R
P
= (-VCC)2/R
D
GND
(when VCC<0 during reverse battery situations) is:
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
will produce a shift (I
GND
S(on)max
* R
GND
values. This shift will vary depending on how many devices are ON in the case of several
high-side drivers sharing the same R
GND
.
resistor:
GND
) in the input thresholds and the status output
GND
S(on)max
only)
becomes the sum of the
14/24Doc ID 9934 Rev 3
VNQ500Application information
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
Note that a resistor (R
GND
) in the ground line
GND
=1kΩ) should be inserted in parallel to D
an inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift ( 600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than those shown in the ISO T/R 7637/1 table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the μC I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
I/Os:
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHμC-VIH-VGND
) / I
IHmax
if the device drives
GND
≈
) in line to
prot
µC and the
µC
Example
For the following conditions:
V
I
latchup
V
5kΩ ≤ R
Recommended values are:
R
CCpeak
OHμC
=10kΩ
prot
= - 100V
≥ 20mA
≥ 4.5V
≤ 180kΩ.
prot
Doc ID 9934 Rev 315/24
Application informationVNQ500
3.4 Maximum demagnetization energy (VCC = 13.5V)
Figure 20. Maximum turn-off current versus load inductance
I
LM AX ( A )
10
VIN, I
A = Single Pulse at T
B= Repetitive pulse at T
C= Repetitive Pulse at T
Jstart
=150ºC
Jstart
Jstart
=100ºC
=125ºC
1
A
B
C
0,1
101001000
L( mH)
L
Demagnetization
Demagnetization
Demagnetization
Note:Values are generated with RL=0 Ω.
In case of repetitive pulses, T
(at beginning of each demagnetization) of every pulse
jstart
must not exceed the temperature specified above for curves B and C.
16/24Doc ID 9934 Rev 3
t
VNQ500Package and thermal data
4 Package and thermal data
4.1 PowerSSO-12 thermal data
Figure 21. PowerSSO-12 PC board
Note:Layout condition of R
thickness=2mm,Cu thickness=35
Figure 22. R
RTHj_amb(°C/ W)
thj-amb
75
70
65
60
55
50
45
0246810
and Zth measurements (PCB FR4 area= 78mm x 78mm, PCB
th
Vs PCB copper area in open box free air condition
μ
m, Copper areas: from minimum pad lay-out to 16 cm2).
PCB Cu heatsink area (cm^ 2)
Doc ID 9934 Rev 317/24
Package and thermal dataVNQ500
Figure 23. Thermal impedance junction ambient single pulse
ZTH ( °C/ W)
1000
Equation 1:
Z
where
THδ
RTHδ Z
δtpT⁄=
100
10
1
0,1
000,010,1110100 1000
Time (s)
pulse calculation formula
1 δ–()+⋅=
THtp
Footprint
8 cm
2
Figure 24. Thermal fitting model of a quad channel HSD in PowerSSO-12
18/24Doc ID 9934 Rev 3
VNQ500Package and thermal data
Table 11.Thermal parameter
Area/island (cm2)Footprint8
R1=R7=R9=R11 (°C/W)0.8
R2=R8=R10=R12 (°C/W)2.6
R3 (°C/W)1.5
R4 (°C/W)8
R5 (°C/W)2818
R6 (°C/W)3022
C1=C7=C9=C11 (W.s/°C)0.00006
C2=C8=C10=C12 (W.s/°C)0.0005
C3 (W.s/°C)0.015
C4 (W.s/°C)0.1
C5 (W.s/°C)0.150.17
C6 (W.s/°C)35
Doc ID 9934 Rev 319/24
Package and packing informationVNQ500
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.
5.2 PowerSSO-12 mechanical data
Table 12.PowerSSO-12 mechanical data
Symbol
Min.Typ.Max.
A1.2501.620
A10.0000.100
A21.1001.650
B0.2300.410
C0.1900.250
D4.8005.000
E3.8004.000
e0.800
H5.8006.200
h0.2500.500
.
Millimeters
L0.4001.270
k0º8º
X1.9002.500
Y3.6004.200
ddd0.100
20/24Doc ID 9934 Rev 3
VNQ500Package and packing information
Figure 25. PowerSSO-12 package dimensions
Doc ID 9934 Rev 321/24
Package and packing informationVNQ500
5.3 PowerSS0-12 packing information
Figure 26. PowerSSO-12 tube shipment (no suffix)
B
C
Base Q.ty100
Bulk Q.ty2000
A
Tube length (± 0.5)532
A1.85
B6.75
C (± 0.1)0.6
Figure 27. PowerSSO-12 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty2500
Bulk Q.ty2500
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)12.4
N (min)60
T (max)18.4
Updated Table 3: Absolute maximum ratings - corrected P
Updated Table 4: Thermal data.
Updated Figure 6: Waveforms - corrected
MC
OUTn
signal.
Updated Table 10: Electrical transient requirements on VCC pin.
Corrected Figure 22: Rthj-amb Vs PCB copper area in open box free
air condition.
®
Added ECOPACK
packages information.
Replaced the obsolete root part number VNQ500PEP-E with the
new root part number VNQ500.
tot
value.
Doc ID 9934 Rev 323/24
VNQ500
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