Double channel high side driver with analog current sense
Features
Max transient supply voltageV
Operating voltage rangeV
Max On-state resistance (per ch.)R
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open load detection
– Output short to V
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E050AJ-E and VND5E050AK-E are
double channel high-side drivers manufactured in
the ST proprietary VIPower M0-5 technology and
housed in the tiny PowerSSO-12 and PowerSSO24 packages. The VND5E050AJ-E and
VND5E050AK-E are designed to drive 12V
automotive grounded loads delivering protection,
diagnostics and easy 3V and 5V CMOS
compatible interface with any microcontroller.
The devices integrate advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, over-temperature shut-off with
auto-restart and over-voltage active clamp. A
dedicated analog current sense pin is associated
with every output channel in order to provide
Enhanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation indication, overtemperature indication, short-circuit to Vcc
diagnosis and on & off state open load detection.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Figure 29. CS_DIS high level voltageFigure 30. CS_DIS clamp voltage
Vcsdh (V)
4
3,5
3
2,5
2
1,5
1
0,5
0
-50 -250255075100 125 150 175
Tc (°C)
Vcsdcl(V)
10
9
8
Icsd = 1 mA
7
6
5
4
3
2
1
0
-50 -250255075100 125 150 175
Tc (°C)
Figure 31. CS_DIS low level voltage
Vcsdl (V)
3
2,5
2
1,5
1
0,5
0
-50 -250255075100 125 150 175
Tc (°C)
24/44 Doc ID 14617 Rev 4
VND5E050AJ-E / VND5E050AK-EApplication information
3 Application information
Figure 32. Application schematic
+5V
V
CC
R
prot
Μ
CU
R
prot
R
prot
R
SENSE
C
EXT
CS_DIS
INPUT
CURRENT SENSE
D
ld
OUTPUT
GND
R
GND
GND
D
GND
V
Note:Channel 2 has the same internal circuit as channel 1.
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.R
2. R
where -I
maximum rating section of the device datasheet.
Power dissipation in R
P
= (-VCC)2/R
D
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
values. This shift will vary depending on how many devices are on in the case of several
high side drivers sharing the same R
≤ 600mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
GND
)
)
(when VCC<0: during reverse battery situations) is:
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Section 3.1.2: Solution 2: diode (DGND) in the
ground line.
3.1.2 Solution 2: diode (D
A resistor (R
=1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os:
if the device drives an
GND
prot
) in line to
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHμC-VIH-VGND
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
CCpeak
prot
≤ 180kΩ
= - 100V and I
latchup
=10kΩ, C
prot
≥ 20mA; V
3.4 Current sense and diagnostic
The current sense pin performs a double function (see Figure 33: Current sense and
diagnostic):
●Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a know ratio K
The current I
external resistor R
minimum (see parameter V
26/44 Doc ID 14617 Rev 4
can be easily converted to a voltage V
SENSE
. Linearity between I
SENSE
SENSE
) / I
IHmax
≥ 4.5V
OHµC
=10nF.
EXT
.
OUT
and V
X
SENSE
by means of an
SENSE
is ensured up to 5V
in Table 9: Current sense (8V<VCC<18V)). The
VND5E050AJ-E / VND5E050AK-EApplication information
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8V<V
●Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
SENSEH
in case of the following fault conditions (refer to ):
<18V)).
CC
SENSEH
up to a
–Power limitation activation
–Over-temperature
–Short to V
in off-state
CC
–Open load in off-state with additional external components.
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the
device in a high impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
Figure 33. Current sense and diagnostic
V
V
BAT
V
CC
PU
41V
Overtemperature
OL OFF
Pwr_Lim
SENSEH
CS_DIS
To uC ADC
I
OUT/KX
R
PROT
R
SENSE
I
SENSEH
CURRENT
SENSEn
V
SENSE
V
3.4.1 Short to VCC and off-state open load detection
Short to V
A short circuit between V
V
SENSEH
during the on-state depending on the nature of the short circuit.
Off-state open load with external circuitry
CC
and output is indicated by the relevant current sense pin set to
CC
during the device off-state. Small or no current is delivered by the current sense
INPUTn
Main MOSn
+
-
GND
PU_CMD
R
PU
V
OL
OUTn
I
I
Loff2r
Loff2f
Load
R
PD
Detection of an open load in off mode requires an external pull-up resistor R
the output to a positive supply voltage V
It is preferable VPU to be switched off during the module stand-by mode in order to avoid the
overall stand-by current consumption to increase in normal conditions, i.e. when load is
connected.
An external pull down resistor R
connected between output and GND is mandatory to
PD
avoid misdetection in case of floating outputs in off-state (see Figure 33: Current sense and
diagnostic).
R
must be selected in order to ensure V
PD
OUT < VOLmin
unless pulled up by the external
circuitry:
VVIRV
2
=<⋅=
OLfoffLPD
min)2(
R
≤ 22 KΩ is recommended.
PD
OUT
OFFupPull
_
−
For proper open load detection in off-state, the external pull-up resistor must be selected
according to the following formula:
IRRVR
V
OUT
For the values of V
(8V<V
CC
<18V).
=
ONupPull
_
−
OLmin,VOLmax, IL(off2)r
and I
⋅⋅−⋅
RR
+
PDPU
see Table 10: Open load detection
L(off2)f
roffLPDPUPUPD
)2(
OL
max
VV
4
=>
28/44 Doc ID 14617 Rev 4
VND5E050AJ-E / VND5E050AK-EApplication information
3.5 Maximum demagnetization energy (VCC = 13.5V)
Figure 34. Maximum turn-off current versus inductance (for each channel)
100
A
B
C
10
I (A)
1
0,1110100L (mH)
A: T
B: T
C: T
VIN, I
= 150°C single pulse
jstart
= 100°C repetitive pulse
jstart
= 125°C repetitive pulse
jstart
L
Note:Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves A and B.
DemagnetizationDemagnetizationDemagnetization
=0 Ω.In case of repetitive pulses, T
L
(at beginning of each
jstart
t
Doc ID 14617 Rev 429/44
Package and PCB thermal dataVND5E050AJ-E / VND5E050AK-E
4 Package and PCB thermal data
4.1 PowerSSO-12 thermal data
Figure 35. PowerSSO-12 PC board
Note:Layout condition of R
area= 77mm x 86mm,PCB thickness=1.6mm, Cu thickness=70µm (front and back side),
Copper areas: from minimum pad lay-out to 8cm
Figure 36. R
thj-amb
ON)
RTHj_amb(°C/ W)
70
65
60
55
50
45
40
35
30
0246810
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
2
).
Vs. PCB copper area in open box free air condition (one channel
PCB Cu heatsink area (cm^ 2)
30/44 Doc ID 14617 Rev 4
VND5E050AJ-E / VND5E050AK-EPackage and PCB thermal data
Figure 37. PowerSSO-12 thermal impedance junction ambient single pulse (one
channel ON)
ZTH (°C/ W)
100
Footprint
2 cm
8 cm
2
2
10
1
0,1
0,00010,0010,010,11101001000
Time ( s)
Equation 1: pulse calculation formula
Z
where
Figure 38. Thermal fitting model of a double channel HSD in PowerSSO-12
THδ
RTHδ Z
δtpT⁄=
THtp
1 δ–()+⋅=
(a)
a. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Doc ID 14617 Rev 431/44
Package and PCB thermal dataVND5E050AJ-E / VND5E050AK-E
Table 15.Thermal parameters
Area/island (cm2)Footprint28
R1=R7 (°C/W)0.7
R2=R8 (°C/W)2.8
R3 (°C/W)4
R4 (°C/W)887
R5 (°C/W)221510
R6 (°C/W)262015
C1=C7 (W.s/°C)0.001
C2=C8 (W.s/°C)0.0025
C3 (W.s/°C)0.05
C4 (W.s/°C)0.20.10.1
C5 (W.s/°C)0.270.81
C6 (W.s/°C)369
4.2 PowerSSO-24 thermal data
Figure 39. PowerSSO-24 PC board
Note:Layout condition of R
area= 77mm x 86mm, PCB thickness=1.6mm, Cu thickness=70µm (front and back side),
Copper areas: from minimum pad lay-out to 8cm
and Zth measurements (PCB: Double layer, Thermal Vias, FR4
th
2
).
32/44 Doc ID 14617 Rev 4
VND5E050AJ-E / VND5E050AK-EPackage and PCB thermal data
Figure 40. R
RTHj_amb(°C/W)
55
50
45
40
35
30
0246810
thj-amb
ON)
vs PCB copper area in open box free air condition (one channel
PCB Cu heatsink area (cm^2)
Doc ID 14617 Rev 433/44
Package and PCB thermal dataVND5E050AJ-E / VND5E050AK-E
Figure 41. PowerSSO-24 thermal impedance junction ambient single pulse (one
channel ON)
Equation 2: pulse calculation formula
Z
where
Figure 42. Thermal fitting model of a double channel HSD in PowerSSO-24
b. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
THδ
RTHδ Z
THtp
1 δ–()+⋅=
δtpT⁄=
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
(b)
34/44 Doc ID 14617 Rev 4
VND5E050AJ-E / VND5E050AK-EPackage and PCB thermal data
Table 16.Thermal parameters
Area / island (cm2)Footprint 2 8
R1= R7 (°C/W)0.4
R2= R8 (°C/W)2
R3 (°C/W)6
R4 (°C/W)7.7
R5 (°C/W)998
R6 (°C/W)281710
C1= C7 (W.s/°C)0.001
C2= C8 (W.s/°C)0.0022
C3 (W.s/°C)0.025
C4 (W.s/°C)0.75
C5 (W.s/°C)149
C6 (W.s/°C)2.2517
Doc ID 14617 Rev 435/44
Package and packing informationVND5E050AJ-E / VND5E050AK-E
5 Package and packing information
5.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK® is an ST trademark.
5.2 PowerSSO-12package information
Figure 43. PowerSSO-12 package dimensions
.
36/44 Doc ID 14617 Rev 4
VND5E050AJ-E / VND5E050AK-EPackage and packing information
Table 17.PowerSSO-12 mechanical data
Symbol
Min.Typ.Max.
A1.251.62
A100.1
A21.101.65
B0.230.41
C0.190.25
D4.85.0
E3.84.0
e0.8
H5.86.2
h0.250.5
L0.41.27
Millimeters
k0°8°
X1.92.5
Y3.64.2
ddd0.1
Doc ID 14617 Rev 437/44
Package and packing informationVND5E050AJ-E / VND5E050AK-E
5.3 PowerSSO-24 package information
Figure 44. PowerSSO-24 package dimensions
38/44 Doc ID 14617 Rev 4
VND5E050AJ-E / VND5E050AK-EPackage and packing information
Table 18.PowerSSO-24 mechanical data
Symbol
Min.Typ.Max.
A2.45
A22.152.35
a100.1
b0.330.51
c0.230.32
(3)
D
(3)
E
10.1010.50
7.407.60
e0.8
e38.8
F2.3
G0.1
H10.110.5
(1) (2)
Millimeters
h0.4
k0°8°
L0.550.85
O1.2
Q0.8
S2.9
T3.65
U1.0
N10°
X4.14.7
Y6.57.1
1. No intrusion allowed inwards the leads.
2. Flash or bleeds on exposed die pad shall not exceed 0.5 mm per side
3. “D and E” do not include mold Flash or protusions. Mold Flash or protusions shall not exceed 0.15 mm per
side
Doc ID 14617 Rev 439/44
Package and packing informationVND5E050AJ-E / VND5E050AK-E
5.4 PowerSSO-12 packing information
Figure 45. PowerSSO-12 tube shipment (no suffix)
B
C
Base q.ty100
Bulk q.ty2000
Tube length (± 0.5)532
A
A1.85
B6.75
C (± 0.1)0.6
All dimensions are in mm.
Figure 46. PowerSSO-12 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base q.ty2500
Bulk q.ty2500
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)12.4
N (min)60
T (max)18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
– Changed L (min) value from 0.6 to 0.55
– Changed L (max) value from 1 to 0.85
Doc ID 14617 Rev 443/44
VND5E050AJ-E / VND5E050AK-E
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