ST TSH690 User Manual

TSH690

40MHz to 1GHz AMPLIFIER

■ Supply voltage: 1.5V to 5V

■ >20 mW adjustable output power

■ 28 dB gain at 450 MHz

■ 21 dB gain at 900 MHz

■ 50 Ω matched input and output

■ Bias pin to adjust the amplification class

■ Power down

DESCRIPTION

The TSH690 is a wide band RF amplifier, de­signed in advanced bi polar process. At 450 MHz,
it features 28dB gain and +13.5dBm (20 mW) out­put power at 3V. At 900 MHz, it features 23 dB
gain and +15.5 dBm (35 mW) output power at 3V.

The pin 8 allows a bias current adjust, setting t he
RF output level and the am plifier be haviour. I t al­lows using the TSH690 from the linear A-class
trough the AB-class to power-down mode.

The TSH690 is suited to drive power amplifiers in
cellular phones (GSM, TDMA) for which the

’turn-on time’ is controlled by a voltage ramp.
The more than 20 m W output power makes the

TSH690 dedicated as output stage for 433MHz
and 868 MHz ISM transmitters.

PACKAGE

D

SO8

(Plastic Micropackage)

PIN CONNECTIONS (top view)

APPLICATIONS

■ 433 MHz and 868 MHz ISM transmitters

■ Telemetering systems

■ Remote controls

■ Cordless T elephones

■ Driver for cellular phones

■ Wide band applications

ORDER CODE

Part Number Temperature Range

TSH690ID -40, +85°C

D = Small Outline Package (SO) - also available in Tape & Reel (DT)

March 2001

Package

D

•

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TSH690

SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

, V

CC1

CC2

, V

Supply Voltage & Bias Voltage 5.5 V

bias

RF in RF Input Power +10 dBm

RF out RF Output Power +21 dBm

T

oper

T

stg

Operating Free Air Temperature Range -40 to +85 °C

Storage Temperature Range -65 to +150 °C

OPERATING CONDITIONS

Symbol Parameter Value Unit

V

CC1

V

RF

, V

bias

CC2

sr

Supply Voltages 1.5 to 5 V
Bias Voltage 0 to 5 V
RF Signal Range 40 to 1000 MHz

ESD SENSITIVE DEVICE

Handling Precautions Required

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TSH690

Tj - T

amb

= Pd • R

th(j-a)

ELECTRICAL DC CHARACTERISTICS

Tamb = 25°C, V

Supply Current
Vcc = 2V
Vcc = 2.7V
Vcc = 3V
Vcc = 4V
Vcc = 5V

Rth-(j-a): Junction Ambient Thermal Resistance for SO-8 Package 140 180 °C/W

connected to V

CC

, ZL = 50Ω (unless otherwise specified)

bias

Parameter Min. Typ. Max. Unit

29

33

46
53

mA

79

105

TSH690 DISSIPATION CONSIDERATIONS

In order to respect t he d issipat ion limitati on of the
package, you should co nsider the f ollo wing eq ua­tion:

with:
R

= junction ambient thermal resistance

th(j-a)

T

(°C) = max. junction temperature (150°C)

j

(°C) = ambient temperature

T

amb

(W) = maxi mu m dissi pa ted power

P

d

The respect of this condition forms a safe area on
the following figure:

Figure 1 : Dissipation capability vs T ambient

900

V

800
700
600
500

(mW)

MAX

400

Pd

300
200
100

0

-40-30-20-100 102030405060708090

SAFE
AREA

T

(°C)

AMB

= V

BIAS

CC

RTH = 180°C/W

If VBIAS is DC connected to VCC, the operating
temperature can be directly determined without

determining ICC, thanks to the direct reading
curve:

Figure 2 : Maximu m T

160
140
120
100

(°C)

80

AMB

T

60
40
20

0

0123456

SAFE
AREA

amb

vs V

VCC(V)

CC

V

BIAS=VCC

R

THmax

=180°C/W

In applications using a duty cycle, the average dis­sipation is less than in continuous mode. The fol­lowing figure gives the relation beetween the dis­sipated power and the duty cycle.

Figure 3 : Dissipation vs Duty cycle

900

Pd = VCC x ICC x Duty Cycle

800
700
600
500
400

Pd(mW)

300
200
100

0

0 102030405060708090100

Duty Cycle(%)

VCC = 5V

VCC = 4V

VCC = 3V

VCC = 2V

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TSH690

ELECTRICAL CHARACTERISTICS AT 450 MHz

Tamb = 25°C, V

Power gain S21 (P
Output Power 1dB Compression 8 12 dBm
3rd Order Intercept Point (f = 430MHz) 16 22 dBm
Reverse Isolation S12 (f = 400MHz) -46 dB
Input Return Loss S11 -10 -15 dB
Noise Figure 4.5 dB

1. All min. and m ax. parameters of this table are garanteed by co rrelation with 900 MHz t ests.

ELECTRICAL CHARACTERISTICS AT 900 MHz

Tamb = 25°C, V

Power gain S21 (P
Output Power at 1dB compression point +12 +14.3 dBm
Output power, Pin = -7 dBm +10 +11.7 dBm
3rd Order Intercept Point +25 dBm
Reverse Isolation S12 -35 dB
Input Return Loss S11 -14 dB
Output Return Loss S22 -4.5 dB
Noise figure 5.4 dB

1. All min. and m ax. parameters of this table are garanteed by te st .

& V

CC

= -20dBm)

in

& V

CC

= -20dBm)

in

= +2.7V, ZL = 50Ω, f = 450 MHz (unless otherwise specified)

bias

Parameter

1)

Min. Typ. Max. Unit

20 23 30 dB

= +3V, ZL = 50Ω, f = 900 MHz (unless otherwise specified)

bias

Parameter

1)

Min. Typ. Max. Unit

19 21 dB

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TSH690

SCATTERING PARAMETERS MEASUREMENT (Reference waves planes at package leads)

TEST CONDITIONS V

CC1

, V

CC2

, V

= +2V, P i n = -40dBm, T

bias

= 25°C

amb

Freq S11 S21 S12 S22
MHz Mag Ang Mag Ang Mag Ang Mag Ang

40 0.642 -22.0 6.319 5.0 0.003 -126.5 0.715 -54.7

50 0.615 -25.7 6.406 7.1 0.008 170.7 0.631 -64.7
100 0.537 -41.3 7.643 7.7 0.002 70.1 0.369 -91.3
150 0.490 -55.6 9.353 3.1 0.004 -141.9 0.253 -100.9
200 0.464 -68.0 11.502 -5.7 0.007 -117.3 0.202 -100.9
250 0.428 -79.0 13.856 -18.0 0.003 162.3 0.203 -92.7
300 0.413 -92.1 16.229 -33.4 0.005 142.1 0.209 -87.6
350 0.373 -101.5 18.019 -51.2 0.008 101.4 0.263 -89.4
400 0.334 -106.7 19.110 -70.1 0.008 115.2 0.326 -99.7
450 0.312 -111.5 19.159 -90.3 0.008 169.9 0.382 -112.1
500 0.290 -112.5 18.154 -108.0 0.008 111.5 0.395 -122.9
550 0.302 -114.5 16.778 -124.8 0.010 92.1 0.425 -130.0
600 0.324 -118.2 15.075 -140.5 0.015 93.6 0.424 -139.6
650 0.335 -122.9 13.482 -153.6 0.011 109.6 0.427 -150.8
700 0.349 -129.6 11.992 -165.5 0.011 101.7 0.425 -159.0
750 0.368 -135.0 10.750 -177.2 0.019 82.4 0.414 -169.5
800 0.366 -142.1 9.453 173.4 0.011 79.5 0.413 -177.8
850 0.373 -147.9 8.598 165.0 0.015 60.2 0.432 176.2
900 0.374 -154.1 7.783 155.8 0.013 89.7 0.438 166.4
950 0.381 -159.0 7.117 146.7 0.017 111.3 0.447 160.8

1000 0.377 -165.8 6.500 138.9 0.013 82.2 0.462 155.1

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