ST TDA7562 User Manual

TDA7562

MULTIFUNCTION QUAD POWER AMPLIFIER

WITH BUILT-IN DIAGNOSTICS FEATURES

■ DMOS POWER OUTPUT

■ HIGH OUTPUT POWER CAPABILITY 4x25W/

4Ω @ 14.4V, 1KHZ, 10% THD, 4x35W EIAJ

■ MAX. OUTPUT POWER 4x60W/2Ω

■ FULL I

2

C BUS DRIVING:
–ST-BY
– INDEPENDENT FRONT/REAR SOFT PLAY/

MUTE

– SELECTABLE GAIN 30dB - 16dB (FOR

LOW NOISE LINE OUTPUT FUNCTION)

2

–I

C BUS DIGITAL DIAGNOSTICS

■ FULL FAULT PROTECTION

■ DC OFFSET DETECTION

■ FOUR INDEPENDENT SHORT CIRCUIT

PROTECTION

■ CLIPPING DETECTOR PIN WITH

SELECTABLE THRESHOLD (2%/10%)

■ ST-BY/MUTE PIN

■ ESD PROTECTIO N

DESCRIPTION

The TDA7562 is a new BCD technology Quad

BLOCK DIAGRAM

MULTIPOWER BCD TECHNOLOGY
MOSFET OUTPUT POWER STAGE

FLEXIWATT27 (Vertical)

Bridge type of car radio amplifier in Flexiwatt27V
package specially intended for car radio applica­tions. Thanks to the DMOS output stage the
TDA7562 has a very low distortion allowing a clear
powerful sound. This device is equipped with a full
diagnostics array that communicates the status of
each speaker through the I
to control the configuratio n and the behaviour of
the device by means of the I

2

C bus.The possibility

2

C bus makes

TDA7562 a very flexible machine.

May 2003

ST-BY/MUTE

IN RF

IN RR

IN LF

IN LR

SVR

CLK

DATA

VCC1 VCC2

Thermal

I2CBUS

Mute1 Mute2

F

R

F

R

AC_GND

16/30dB

16/30dB

16/30dB

16/30dB

RF

RR

PW_GND

Protection
& Dump

LF LR

Reference

Short Circuit
Protection &
Diagnostic

Short Circuit
Protection &
Diagnostic

Short Circ uit
Protection &
Diagnostic

Short Circuit
Protection &
Diagnostic

TAB

Clip
Detector

CD_OUT

OUT RF+

OUT RF­OUT RR+

OUT RR-

OUT LF+

OUT LF­OUT LR+

OUT LR-

S_GND

1/17

TDA7562

0

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

op

V

V

peak

V

CK

V

DATA

I

O

I

O

P

tot

T

stg

THERMAL DATA

Symbol Parameter Value Unit

R

th j-case

Operating Supply Voltage 18 V
DC Supply Voltage 28 V

S

Peak Supply Voltage (for t = 50ms) 50 V
CK pin Voltage 6 V
Data Pin Voltage 6 V
Output Peak Current (not repetitive t = 100µs) 8 A
Output Peak Current (repetitive f > 10Hz) 6 A
Power Dissipation T

= 70°C 85 W

case

, TjStorage and Junction Temperature -55 to 150 °C

Thermal Resistance Junction to case

Max.

1 °C/W

PIN CONNECTION

(Top view)

27
26
25
24
23

22
21
20
19
18
17
16
15
14
13
12
11
10

9
8
7
6

5
4
3
2
1

TAB
DATA
PW_GND RR
OUT RR­CK
OUT RR+
V

CC2

OUT RF­PW_GND RF
OUT RF+
AC GND
IN RF
IN RR
S_GND
IN LR
IN LF
SVR
OUT LF+
PW_GND LF
OUT LF­V

CC1

OUT LR+
CD-OUT
OUT LR­PW_GND LR
STBY
TAB

D00AU123

2/17

Figure 1. Application Circuit

TDA7562

V(4V .. V

I2C BUS

IN RF

IN RR

IN LF

IN LR

)

CC

DATA

CLK

C1 0.22µF

C2 0.22µF

C3 0.22µF

C4 0.22µF

C8

0.1µF

S-GND

C7

3300µF

Vcc1 Vcc2

2

26

23

16

15

12

13

17 11 5

14

C5

1µF

C6

10µF

721

18
19
20

22
25
24

10

9
8

6
3
4

1, 27

47K

CD OUT

+

­+

­+

­+

­TAB

OUT RF

OUT RR

OUT LF

OUT LR

V

D00AU1231A

3/17

TDA7562

ELECTRICAL CHARACTERISTICS

(Refer to the test circuit, V

= 14.4V; RL = 4Ω; f = 1KHz; T

S

= 25°C; unless otherwise specified.)

amb

Symbol Parameter Test Condition Min. Typ. Max. Unit

POWER AMPLIFIER

V

P

THD Total Harmonic Distortion P

Supply Voltage Range 8 18 V

S

I

Total Quiescent Drain Current 150 300 mA

d

Output Power EIAJ (VS = 13.7V) 32 35 W

O

THD = 10%
THD = 1%

= 2Ω; EIAJ (VS = 13.7V)

R

L

RL = 2Ω; THD 10%
R

= 2Ω; THD 1%

L

RL = 2Ω; MAX POWER

= 1W to 10W; f = 1kHz 0.04 0.1 %

O

22 25

20

50
32

55
38
30
60

PO = 1-10W, f = 10kHz 0.02 0.5 %
G

= 16dB; VO = 0.1 to 5VRMS 0.02 0.05 %

V

C

R

G

∆G

G

∆G

E
E

Cross Talk f = 1KHz to 10KHz, Rg = 600Ω 50 60 dB

T

Input Impedance 60 100 130 KΩ

IN

Voltage Gain 1 29.5 30 30.5 dB

V1

Voltage Gain Match 1 -1 1 dB

V1

Voltage Gain 2 15.5 16 16.5 dB

V2

Voltage Gain Match 2 -1 1 dB

V2

Output Noise Voltage 1 Rg = 600Ω 20Hz to 22kHz 50 100 µV

IN1

Output Noise Voltage 2 Rg = 600Ω; GV = 16dB

IN2

15 30 µV

20Hz to 22kHz

SVR Supply Voltage Rejection f = 100Hz to 10kHz; V

R

= 600Ω

g

= 1Vpk;

r

50 60 dB

BW Power Bandwidth 100 KHz
A

I

A
V
V
T

T
V

V
V

I

CD
CD
CD

Stand-by Attenuation 90 110 dB

SB

Stand-by Current 2 100 µA

SB

Mute Attenuation 80 100 dB

M

Offset Voltage Mute & Play -100 0 100 mV

OS

Min. Supply Mute Threshold 7 7.5 8 V

AM

Turn ON Delay D2/D1 (IB1) 0 to 1 5 20 ms

ON

Turn OFF Delay D2/D1 (IB1) 1 to 0 5 20 ms

OFF

St-By/Mute pin for St-By 0 1.5 V

SBY

St-By/Mute pin for Mute 3.5 5 V

MU

St-By/Mute pin for Operating 7 V

OP

St-By/Mute pin Curren t V

MU

Clip Det High Leakage Current CD off 0 15 µA

LK

Clip Det Sat. Voltage CD on; ICD = 1mA 300 mV

SAT

Clip Det THD level D0 (IB1) = 1 5 10 15 %

THD

STBY/MUTE

V

STBY/MUTE

= 8.5V 20 40 µA
< 1.5V 0 10 µA

S

D0 (IB1) = 0 1 2 3 %

W
W

W
W
W
W

V

4/17

TDA7562

ELECTRICAL CHARACTERISTICS

(Refer to the test circuit, V

= 14.4V; RL = 4Ω; f = 1KHz; T

S

(continued)

= 25°C; unless otherwise specified.)

amb

Symbol Parameter Test Condition Min. Typ. Max. Unit

DIAGNOSTICS (Power Amplifier Mode or Line Driver Mode)

Pgnd Short to GND det. (below this

limit, the Output is considered in
Short Circuit to GND)

Pvs Short to V

det. (above this limit,

S

Power Amplifier in Mute or Play,
one or more short circuits
protection activated

1.2 V

Vs -1.2 V
the Output is considered in Short
Circuit to V

Pnop Normal operation thresholds.

)

S

1.8 Vs -1.8 V
(Within these limits, the Output is
considered witho ut faults).

Lsc Shorted Load det. Power Amplifier Mode 0.5 Ω

Line Driver Mode 1.5 Ω

V

Offset Detection ±1.5 ±2 ±2.5 V

O

I2C BUS INTERFACE

f

V

SCL

V

Clock Frequency 400 KHz
Input Low Voltage 1.5 V

IL

Input High Voltage 2.3 V

IH

5/17

TDA7562

Figure 2. Quiescent Current vs. Supply Voltage

Id (mA)

250
230
210
190
170
150
130
110

90
70
50

Vin = 0
NO LOADS

8 10 121 41 6 18

Vs (V)

Figure 3. Output Power vs. Supply Voltage (4Ω)

Po (W)

70
65
60
55
50
45
40
35
30
25
20
15
10

5

RL = 4 Ohm
f = 1 KHz

8 9 10 11 12 13 14 15 16 17 18

Vs (V)

Po-max

THD = 10 %

THD = 1 %

Figure 5.

10

1

0.1

0.01

Figure 6.

10

1

0.1

0.01

Distortion vs. Output Power (4Ω)

THD (%)

Vs = 14.4 V
RL = 4 Ohm

f = 10 KHz

f = 1 KHz

0.1 1 10
Po (W)

Distortion vs. Output Power (2Ω)

THD (%)

Vs = 14.4 V
RL = 2 Ohm

f = 10 KHz

f = 1 KHz

0.1 1 10
Po (W)

Figure 4. Output Power vs. Supply Voltage (2Ω)

Po (W)

80
75
70
65
60
55
50
45
40
35
30
25
20
15
10

5

8 9 10 11 12 13 14 15 16

RL = 2 Ohm
f = 1 KHz

Vs (V)

6/17

Po-max

THD = 10 %

THD = 1 %

Figure 7.

10

1

0.1

0.01

Distortion vs. Output Power (4Ω)

THD (%)

Vs = 14.4 V
RL = 4 Ohm
Po = 4 W

10 100 1000 10000

f (Hz)