ST STPS30L60C User Manual
Features
■ Low forward voltage drop
■ Negligible switching losses
■ Low thermal resistance
■ Avalanche capability specified
STPS30L60C
Power Schottky rectifier
Datasheet − production data
A1
K
A2
K
Description
These dual center tap Schottky rectifiers are
suited for switched mode power supplies and high
frequency DC to DC converters.
Packaged in TO-220FPAB, TO-220AB narrow
leads, TO-220AB, D
device is intended for use in high frequency
inverters.
Figure 1. Electrical characteristics
V
I
V
RRM
V
V
AR
R
"Reverse"
2
PAK, I2PAK and TO-247, this
(a)
I
"Forward"
2 x I
O
I
F
I
O
I
R
V
V
To
F(Io)
X
X
V
V
V
F(2xIo)
F
A2
A1
2
PAK
D
STPS30L60CG
A2
K
A1
TO-220AB
STPS30L60CT
K
A2
A1
K
TO-220AB narrow leads
STPS30L100CTN
K
A1
TO-220FPAB
STPS30L60CFP
A1
2
PAK
I
STPS30L60CR
K
A1
TO-247
STPS30L60CW
A2
A2
K
A2
I
AR
Table 1. Device summary
Symbol Value
2 x 15 A
I
F(AV)
60 V
0.56 V
a. V
ARM
and I
must respect the reverse safe
ARM
operating area defined in Figure 12 V
pulse measurements (t
are static characteristics
< 1 µs). VR, IR, V
p
and IAR are
AR
RRM
and VF,
V
RRM
150 °C
T
j (max)
V
F (max)
June 2012 Doc ID 6479 Rev 10 1/13
This is information on a product in full production.
www.st.com
13
Characteristics STPS30L60C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
RRM
P
ARM
V
ARM
V
ASM
T
Repetitive peak reverse voltage 60 V
RRM
Forward rms current 30 A
TO-220AB narrow leads,
TO-220AB, I
Average forward current
TO-247, δ = 0.5
TO-220FPAB, δ = 0.5
Surge non repetitive forward current t
FSM
Repetitive peak reverse current
(1)
Repetitive peak avalanche power
(2)
Maximum repetitive peak avalanche voltage
(2)
Maximum single pulse peak avalanche voltage
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
2
PAK, D2PA K,
(3)
Tc = 130 °C
T
= 110 °C
c
= 10 ms, sinusoidal 230 A
p
t
= 2 µs square, F = 1
p
kHz
t
= 1 µs, Tj = 25 °C
p
< 1 µs, Tj < 150 °C,
t
p
< 29 A
I
AR
t
< 1 µs, Tj < 150 °C,
p
IAR < 29 A
Per diode
Per device
Per diode
Per device
15
30
15
30
2A
7800 W
80 V
80 V
150 °C
dV/dt Critical rate of rise reverse voltage 10000 V/µs
1. For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12.
dPtot
3. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistances
<
Rth(j-a)
1
Symbol Parameter Value Unit
A
TO-220AB narrow leads,
TO-220AB, I2PAK, D2PAK, TO-247
R
th(j-c)
Junction to case
TO-220FPAB
TO-220AB narrow leads, TO-220AB, I2PAK,
th(c)
Coupling
R
D2PAK, TO-247
TO-220FPAB 3.2
When the diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode1) x R
j
2/13 Doc ID 6479 Rev 10
(Per diode) + P(diode2) x R
th(j-c)
th(c)
Per diode 1.5
Total 0.8
Per diode 4.7
Total 3.95
0.1
°C/W
STPS30L60C Characteristics
I (A)
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
= 25 °C
T
(1)
I
R
V
Reverse leakage current
(1)
Forward voltage drop
F
j
= 125 °C 77 130 mA
T
j
T
= 25 °C IF = 15 A 0.6
j
= 125 °C IF = 15 A 0.5 0.56
T
j
V
R
= V
RRM
Tj = 25 °C IF = 30 A 0.75
480 µA
V
Tj = 125 °C IF = 30 A 0.65 0.7
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.42 x I
Figure 2. Average forward power dissipation
P (W)
F(av)
12
10
8
6
4
2
0
0 2 4 6 8 101214161820
versus average forward current
(per diode)
δ
δ = 1
=tp/T
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(av)
δ = 0.5
Figure 3. Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
F(av)
18
16
14
12
10
8
6
T
tp
4
2
0
0 25 50 75 100 125 150
δ
=tp/T
R
th(j-a)=Rth(j-c)
T
tp
+ 0.009x I
F(AV)
TO-220AB, TO-220AB narrow leads, I2PAK, D2PAK,TO-247
R
=15 °C/W
th(j-a)
T (°C)
amb
F2(RMS)
TO-220FPAB
Figure 4. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Doc ID 6479 Rev 10 3/13
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Characteristics STPS30L60C
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
TO-220AB,TO-220 narrow leads
TO-247, D2PAK,I2PAK
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
t (s)
p
Figure 8. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
I (mA)
R
5E+2
1E+2
1E+1
1E+0
1E-1
1E-2
0 5 10 15 20 25 30 35 40 45 50 55 60
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
V (V)
R
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
δ=0.5
0.6
0.5
0.4
δ=0.2
0.3
δ=0.1
0.2
0.1
Single pulse
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
t (s)
p
δ
T
=tp/T
Figure 9. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(nF)
2.0
1.0
0.5
0.2
VR(V)
0.1
1 10 100
F=1MHz
Tj=25°C
tp
4/13 Doc ID 6479 Rev 10
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