ST STPS30H60C User Manual

Features

■ High junction temperature capability

■ Avalanche rated

■ Low leakage current

■ Good trade-off between leakage current and

forward voltage drop

■ High frequency operation

Description

Dual centre tab Schottky rectifier suited for high frequency switch mode power supply.

Packaged in TO-220FPAB, TO-220AB, TO-247,

2

I

PAK, and D2PAK, this device is intended to be used in notebook and LCD adaptors and desktop SMPS. In these applications the STPS30H60C provides a good margin between the remaining voltages applied on the diode and the voltage capability of the diode.

A1

A2

TO-220AB

STPS30H60CT

K

STPS30H60C

Power Schottky rectifier

K

A2

K

A1

TO-220FPAB

STPS30H60CFP

A1

A2

K

2

I

PAK

STPS30H60CR

A1

A2

K

A2

A1

2

PAK

D

STPS30H60CG

Table 1. Device summary

TO-247

STPS30H60CW

A1

A2

K

Symbol Value

I

F(AV)

V

F (typ)

RRM

T

j

2 X 15 A

60 V

175 °C

0.535 V

July 2011 Doc ID 12123 Rev 3 1/11

www.st.com

11

Characteristics STPS30H60C

1 Characteristics

Table 2. Absolute ratings (limiting values per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Repetitive peak reverse voltage 60 V

RRM

Forward rms current 30 A

TO-220AB

= 155 °C

T

c

Average forward current, δ = 0.5

TO-220FPAB T

= 125 °C

c

TO-220FPAB T

= 90 °C

c

Surge non repetitive forward current tp = 10 ms sinusoidal 230 A

FSM

Releative peak avalanche power Tj = 25 °C tp = 1 µs 10 200 W

ARM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

dPtot

dTj

<

Rth(j-a)

1

(1)

Per diode 15

Total package 30

Per diode 15

Total package 30

175 °C

Symbol Parameter Value Unit

Per diode 1.5

Total 0.8

Per diode 4.7

To t al 3 . 95

°C/W

R

Table 4. Static electrical characteristics

th(j-c)

th(c)

Junction to case

Coupling

TO-220AB, I2PA K, D2PAK, TO-247

TO-220FPAB

2

TO-220AB, I

PA K , D2PAK, TO-247 0.1

TO-220FPAB 3.2

Symbol Parameter Test conditions Min. Typ. Max. Unit

A

= 25 °C

T

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: t

Reverse leakage current

R

(2)

Forward voltage drop

F

= 380 µs, δ < 2%

p

j

= 125 °C 8 25

T

j

T

= 25 °C

j

= 125 °C 435 470

T

j

= 25 °C

T

j

= 125 °C 535 570

T

j

= 25 °C

T

j

= 125 °C 635 690

T

j

V

= V

R

I

= 7.5 A

F

I

= 15 A

F

I

= 30 A

F

RRM

To evaluate the conduction losses use the following equation: P = 0.45 x I

2/11 Doc ID 12123 Rev 3

+ 0.008 x I

F(AV)

60 µA

550

660

820

F2(RMS)

mA

mV

STPS30H60C Characteristics

Figure 1. Conduction losses versus

average forward current

P (W)

F(AV)

12

10

8

6

4

2

0

0 2 4 6 8 10 12 14 16 18

δ=0.05

δ=0.1 δ=0.2

I (A)

F(AV)

δ

δ=0.5

T

=tp/T

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1µs)

ARM

1

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I (A)

F(AV)

δ=1

tp

18

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125 150 175

R

th(j-a)

=15 °C/W

T (°C)

amb

R

TO-220FPAB

th(j-a)=Rth(j-c)

Figure 4. Normalized avalanche power

derating versus junction temperature

P(T)

ARM j

P (25 °C)

ARM

1.2

1

0.1

0.01

t (µs)

0.001

0.10.01 1

10 100

p

1000

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode)

I (A)

M

200

180

160

140

120

100

80

60

40

I

M

20

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ

=0.5

TO-220AB,TO-247 D PAK, I PAK

t(s)

22

TC=50°C

TC=75°C

TC=125°C

0.8

0.6

0.4

0.2

T (°C)

0

25 50 75 100 125

j

Figure 6. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode)

I (A)

M

120

100

80

60

40

I

M

20

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

TO-220FPAB

TC=50 °C

TC=75 °C

TC=125 °C

150

Doc ID 12123 Rev 3 3/11

Characteristics STPS30H60C

Figure 7. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

TO-220AB,TO-247 D PAK, I PAK

0.9

0.8

0.7

δ=0.5

0.6

0.5

δ=0.2

0.4

0.3

δ=0.1

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

22

t (s)

T

tp

=tp/T

p

δ

Figure 8. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

TO-220FPAB

0.9

0.8

0.7

δ=0.5

0.6

0.5

0.4

δ=0.2

0.3

δ=0.1

0.2

0.1

Single pulse

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

δ

T

=tp/T

tp

Figure 9. Reverse leakage current versus

reverse voltage applied (typical values, per diode)

I (mA)

R

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

0 5 10 15 20 25 30 35 40 45 50 55 60

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

V (V)

R

Figure 11. Forward voltage drop versus

forward current (per diode)

I (A)

FM

100

TJ=125 °C

Maximum values

TJ=125 °C

Typical values

10

1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

Maximum values

V (V)

FM

TJ=25 °C

Figure 10. Junction capacitance versus

reverse voltage applied (typical values, per diode)

C(nF)

10.0

1.0

V (V)

0.1

1 10 100

R

V

osc

F=1MHz

=30mV

Tj=25°C

RMS

Figure 12. Thermal resistance junction to

ambient versus copper surface under tab

R (°C/W)

th(j-a)

80

epoxy printed board FR4, copper thickness = 35 µm

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

S(cm²)

2

D PAK

4/11 Doc ID 12123 Rev 3