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Features
STPS20M60
Power Schottky rectifier
■ High current capability
■ Avalanche rated
■ Low forward voltage drop
■ High frequency operation
Description
The STPS20M60D is a single diode Schottky
rectifier, suited for high frequency switch mode
power supply.
Packaged in TO-220AC,this device is intended to
be used in notebook, game station and desktop
adapters, providing in these applications a good
efficiency at both low and high load.
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(typ) 0.37 V
V
F
(max) 150 °C
T
j
20 A
60 V
A
K
K
A
K
TO-220AC
STPS20M60D
Figure 1. Electrical characteristics
2 x I
I
"Forward"
F(Io)
X
X
V
F
O
I
F
I
O
I
R
V
V
To
V
I
V
RRM
V
V
AR
R
"Reverse"
(a)
V
F(2xIo)
V
I
AR
a. V
and I
ARM
operating area defined in Figure 11. V
pulse measurements (t
are static characteristics
must respect the reverse safe
ARM
< 1 µs). VR, IR, V
p
and IAR are
AR
and VF,
RRM
November 2011 Doc ID 022037 Rev 1 1/7
www.st.com
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Characteristics STPS20M60
1 Characteristics
Table 2. Absolute ratings (limiting values, at T
specified)
Symbol Parameter Value Unit
= 25 °C unless otherwise
amb
V
I
F(RMS)
I
F(AV)
I
P
ARM
V
ARM
V
ASM
T
1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
2. See Figure 11
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Repetitive peak reverse voltage 60 V
RRM
Forward rms current 60 A
Average forward current, δ = 0.5 Tc = 135 °C 20 A
Surge non repetitive forward current tp = 10 ms sine-wave 400 A
FSM
(1)
Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 26400 W
Maximum repetitive peak
(2)
avalanche voltage
Maximum repetitive peak
(2)
avalanche voltage
Storage temperature range -65 to +175 °C
stg
Maximum operating junction temperature
T
j
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
<
Rth(j-a)
1
dPtot
dTj
t
< 1 µs, Tj < 150 °C, IAR < 99 A 80 V
p
< 1 µs, Tj < 150 °C, IAR < 99 A 80 V
t
p
(3)
150 °C
Symbol Parameter Value Unit
th(j-c)
Junction to case 1.0 °C/W
R
2/7 Doc ID 022037 Rev 1
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STPS20M60 Characteristics
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
R
V
Reverse leakage current
(2)
Forward voltage drop
F
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
= 380 µs, δ < 2%
p
= 25 °C
T
j
= 125 °C - 20 75 mA
T
j
Tj = 25 °C
= 125 °C - 0.370 0.415
T
j
= 25 °C
T
j
= 125 °C - 0.460 0.530
T
j
V
= V
R
I
= 10 A
F
I
= 20 A
F
RRM
- 30 125 µA
- 0.470 0.505
- 0.530 0.580
To evaluate the conduction losses use the following equation:
P = 0.385 x I
Figure 2. Average forward power dissipation
versus average forward current
P (W)
F(AV)
18
16
14
12
10
8
6
4
2
0
0 4 8 1216202428
δ = 0.05
δ = 0.1
Figure 4. Normalized avalanche power
derating versus pulse duration
+ 0.0073 x I
F(AV)
δ = 0.2
T
δ = t / T
p
F2(RMS)
Figure 3. Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
24
R
= R
th(j-a)
δ = 0.5
t
p
δ = 1
I (A)
F(AV)
20
16
12
8
4
0
0 25 50 75 100 125 150
th(j-c)
T (°C)
amb
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(tp)
P (1µs)
ARM
1
ARM
P (25 °C)
1.2
1
P(T)
ARM j
ARM
V
0.1
0.01
0.001
0.10.01 1
10 100
0.8
0.6
0.4
0.2
T (°C)
t (µs)
p
1000
0
25 50 75 100 125
j
150
Doc ID 022037 Rev 1 3/7