ST STPS20L40C User Manual

STPS20L40C

Low drop power Schottky rectifier

Main product characteristics

I

F(AV)

V

RRM

T

(max) 150° C

j

(max) 0.5 V

V

F

2 x 10 A

40 V

Features and benefits

■ Low forward voltage drop meaning very small

conduction losses

■ Low dynamic losses as a result of the schottky

barrier

■ Insulated package: TO-220FPAB

insulating voltage = 200 V DC
capacitance = 12 pF

■ Avalanche capability specified

Description

Dual center tap Schottky rectifiers designed for
high frequency switched mode power supplies
and DC to DC converters.

A1

A2

TO-220FPAB

STPS20L40CFP

A1

K

A2

K

These devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.

March 2007 Rev 5 1/7

www.st.com

7

Characteristics STPS20L40C

d

-

1 Characteristics

Table 1. Absolute Ratings (limiting values)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

I

I

P

T

Repetitive peak reverse voltage 40 V

RRM

RMS forward voltage 30 A

= 115° C

T

Average forward current

Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A

FSM

Peak repetitive reverse current tp = 2 µs square F = 1 kHz 1 A

RRM

Non repetitive peak reverse current tp = 100 µs square 2 A

RSM

Repetitive peak avalanche power tp = 1 µs Tj = 25°C 4000 W

ARM

Storage temperature range -65 to + 150 °C

stg

T

Maximum operating junction temperature

j

c

δ = 0.5

(1)

Per diode
Per device

10
20

150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Ptot

--------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

1

--------------------------

<

Rth j a–()

Table 2. Thermal resistances

Symbol Parameter Value Unit

R

th(j-c)

Junction to case

Per diode

To ta l

Coupling

4.5

3.5

2.5

°C/W

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x R

Table 3. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

.

A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

T

= 25° C

(1)

I

V

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(1)

Forward voltage drop

F

j

= 100° C 15 35 mA

T

j

= 25° C IF = 10 A 0.55

T

j

T

= 125° C IF = 10 A 0.44 0.5

j

= 25° C IF = 20 A 0.73

T

j

T

= 125° C IF = 20 A 0.62 0.72

j

To evaluate the conduction losses use the following equation:
P = 0.28 x I

2/7

F(AV)

+ 0.022 I

F2(RMS)

= V

V

R

RRM

V

0.7 mA

STPS20L40C Characteristics

Figure 1. Average forward power

dissipation versus average forward
current (per diode)

P (W)

F(AV)

8

7

6

5

4

3

2

1

0

δ = 0.05

02468101214

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

Figure 2. Average forward current versus

ambient temperature
(

δ = 0.5, per diode)

I (A)

F(AV)

12

11

10

9

8

7

6

5

4

3

2

1

=tp/T

δ

0

0 25 50 75 100 125 150

R =15°C/W

th(j-a)

T

tp

T (°C)

amb

R=R

th(j-a) th(j-c)

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration

I (A)

M

100

90

80

70

60

50

40

30

IM

20

10

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

T =25°C

T =50°C

T =100°C

C

Z/R

th(j-c) th(j-c)

1.0

0.8

0.6

C

C

δ = 0.5

0.4

δ = 0.2

δ = 0.1

0.2

t (s)

Single pulse

0.0
1E-3 1E-2 1E-1 1E+0 1E+1

p

3/7

δ

=tp/T

T

tp