STPS20L40C
Low drop power Schottky rectifier
Main product characteristics
I
F(AV)
V
RRM
T
(max) 150° C
j
(max) 0.5 V
V
F
2 x 10 A
40 V
Features and benefits
■ Low forward voltage drop meaning very small
conduction losses
■ Low dynamic losses as a result of the schottky
barrier
■ Insulated package: TO-220FPAB
insulating voltage = 200 V DC
capacitance = 12 pF
■ Avalanche capability specified
Description
Dual center tap Schottky rectifiers designed for
high frequency switched mode power supplies
and DC to DC converters.
A1
A2
TO-220FPAB
STPS20L40CFP
A1
K
A2
K
These devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
March 2007 Rev 5 1/7
www.st.com
7
Characteristics STPS20L40C
d
-
1 Characteristics
Table 1. Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
I
P
T
Repetitive peak reverse voltage 40 V
RRM
RMS forward voltage 30 A
= 115° C
T
Average forward current
Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A
FSM
Peak repetitive reverse current tp = 2 µs square F = 1 kHz 1 A
RRM
Non repetitive peak reverse current tp = 100 µs square 2 A
RSM
Repetitive peak avalanche power tp = 1 µs Tj = 25°C 4000 W
ARM
Storage temperature range -65 to + 150 °C
stg
T
Maximum operating junction temperature
j
c
δ = 0.5
(1)
Per diode
Per device
10
20
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Ptot
--------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
1
--------------------------
<
Rth j a–()
Table 2. Thermal resistances
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
To ta l
Coupling
4.5
3.5
2.5
°C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
Table 3. Static electrical characteristics (per diode)
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
.
A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
T
= 25° C
(1)
I
V
1. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(1)
Forward voltage drop
F
j
= 100° C 15 35 mA
T
j
= 25° C IF = 10 A 0.55
T
j
T
= 125° C IF = 10 A 0.44 0.5
j
= 25° C IF = 20 A 0.73
T
j
T
= 125° C IF = 20 A 0.62 0.72
j
To evaluate the conduction losses use the following equation:
P = 0.28 x I
2/7
F(AV)
+ 0.022 I
F2(RMS)
= V
V
R
RRM
V
0.7 mA
STPS20L40C Characteristics
Figure 1. Average forward power
dissipation versus average forward
current (per diode)
P (W)
F(AV)
8
7
6
5
4
3
2
1
0
δ = 0.05
02468101214
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 2. Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
I (A)
F(AV)
12
11
10
9
8
7
6
5
4
3
2
1
=tp/T
δ
0
0 25 50 75 100 125 150
R =15°C/W
th(j-a)
T
tp
T (°C)
amb
R=R
th(j-a) th(j-c)
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration
I (A)
M
100
90
80
70
60
50
40
30
IM
20
10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =25°C
T =50°C
T =100°C
C
Z/R
th(j-c) th(j-c)
1.0
0.8
0.6
C
C
δ = 0.5
0.4
δ = 0.2
δ = 0.1
0.2
t (s)
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0 1E+1
p
3/7
δ
=tp/T
T
tp
Characteristics STPS20L40C
Figure 7. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
I (mA)
R
2E+2
1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0 5 10 15 20 25 30 35 40
T =150°C
j
T =125°C
j
T =75°C
j
T =25°C
j
V (V)
R
Figure 9. Forward voltage drop versus
forward current (maximum values)
(per diode)
I (A)
FM
100.0
10.0
T =125°C
j
T =150°C
j
(typical values)
T =25°C
j
Figure 8. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
2000
1000
V (V)
100
12 51020 50
R
F=1MHz
V =30mV
OSC RMS
T =25°C
j
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T =75°C
j
V (V)
FM
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STPS20L40C Package Information
2 Package Information
● Epoxy meets UL94, V0
● Cooling method: by conduction (C)
● Recommended torque value: 0.55 Nm
● Maximum torque value: 0.70 Nm
Table 4. TO-220FPAB dimensions
Dimensions
Ref
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
A
H
B
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
Dia
L6
L2
L3
L5
F1
L4
F2
D
L7
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
G1
F
E
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
G
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
5/7
Ordering information STPS20L40C
3 Ordering information
Ordering type Marking Package Weight Base qty
STPS20L40CFP STPS20L40CFP TO-220FPAB 2 g 50 Tube
Delivery
mode
4 Revision history
Date Revision Description of Changes
Jul_2003 4B Last release.
26-Mar-2007 5 Removed ISOWATT, TO-220AB and TO-247 packages.
6/7
STPS20L40C
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