Figure 51. 20-pin, 4.40 mm body, 0.65 mm pitch .................................................................................101
Figure 52. 20-lead, plastic small outline (300 mils) package ...............................................................101
Figure 53. STM8S903K3/F3 ordering information scheme ..................................................................104
7/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Introduction
Introduction1
This datasheet contains the description of the device features, pinout, electrical characteristics,
mechanical data and ordering information.
For complete information on the STM8S microcontroller memory, registers and peripherals,
•
please refer to the STM8S microcontroller family reference manual (RM0016).
For information on programming, erasing and protection of the internal Flash memory
•
please refer to the STM8S Flash programming manual (PM0051).
For information on the debug and SWIM (single wire interface module) refer to the STM8
•
SWIM communication protocol and debug module user manual (UM0470).
For information on the STM8 core, please refer to the STM8 CPU programming manual
•
(PM0044).
DocID15590 Rev 88/116
DescriptionSTM8S903K3 STM8S903F3
Description2
The STM8S903K3 and STM8S903F3 8-bit microcontrollers offer 8 Kbytes Flash program
memory, plus integrated true data EEPROM. The STM8S microcontroller family reference
manual (RM0016) refers to devices in this family as low-density. They provide the following
benefits: performance, robustness, and reduced system cost.
Device performance and robustness are ensured by advanced core and peripherals made
in a state-of-the art technology, a 16 MHz clock frequency, robust I/Os, independent watchdogs
with separate clock source, and a clock security system.
The system cost is reduced thanks to an integrated true data EEPROM for up to 300
kwrite/erase cycles and a high system integration level with internal clock oscillators, watchdog
and brown-out reset.
Full documentation is offered as well as a wide choice of development tools.
The following section intends to give an overview of the basic features of the device functional
modules and peripherals.
For more detailed information please refer to the corresponding family reference manual
(RM0016).
Central processing unit STM84.1
The 8-bit STM8 core is designed for code efficiency and performance.
It contains 6 internal registers which are directly addressable in each execution context, 20
addressing modes including indexed indirect and relative addressing and 80 instructions.
Architecture and registers
Harvard architecture
•
3-stage pipeline
•
32-bit wide program memory bus - single cycle fetching for most instructions
•
X and Y 16-bit index registers - enabling indexed addressing modes with or without offset
•
and read-modify-write type data manipulations
8-bit accumulator
•
24-bit program counter - 16-Mbyte linear memory space
•
16-bit stack pointer - access to a 64 K-level stack
•
8-bit condition code register - 7 condition flags for the result of the last instruction
•
Addressing
20 addressing modes
•
Indexed indirect addressing mode for look-up tables located anywhere in the address
•
space
Stack pointer relative addressing mode for local variables and parameter passing
•
Instruction set
80 instructions with 2-byte average instruction size
•
Standard data movement and logic/arithmetic functions
•
8-bit by 8-bit multiplication
•
16-bit by 8-bit and 16-bit by 16-bit division
•
Bit manipulation
•
Data transfer between stack and accumulator (push/pop) with direct stack access
•
Data transfer using the X and Y registers or direct memory-to-memory transfers
•
Single wire interface module (SWIM) and debug module (DM)4.2
The single wire interface module and debug module permits non-intrusive, real-time in-circuit
debugging and fast memory programming.
11/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Product overview
SWIM
Single wire interface module for direct access to the debug module and memory programming.
The interface can be activated in all device operation modes. The maximum data transmission
speed is 145 bytes/ms.
Debug module
The non-intrusive debugging module features a performance close to a full-featured emulator.
Beside memory and peripherals, also CPU operation can be monitored in real-time by means
of shadow registers.
R/W to RAM and peripheral registers in real-time
•
R/W access to all resources by stalling the CPU
•
Breakpoints on all program-memory instructions (software breakpoints)
•
Two advanced breakpoints, 23 predefined configurations
•
Interrupt controller4.3
Nested interrupts with three software priority levels
•
32 interrupt vectors with hardware priority
•
Up to 28 external interrupts on 7 vectors including TLI
•
Trap and reset interrupts
•
Flash program and data EEPROM memory4.4
8 Kbytes of Flash program single voltage Flash memory
•
640 bytes true data EEPROM
•
User option byte area
•
Write protection (WP)
Write protection of Flash program memory and data EEPROM is provided to avoid unintentional
overwriting of memory that could result from a user software malfunction.
There are two levels of write protection. The first level is known as MASS (memory access
security system). MASS is always enabled and protects the main Flash program memory,
data EEPROM and option bytes.
To perform in-application programming (IAP), this write protection can be removed by writing
a MASS key sequence in a control register. This allows the application to write to data
EEPROM, modify the contents of main program memory or the device option bytes.
A second level of write protection, can be enabled to further protect a specific area of memory
known as UBC (user boot code). Refer to the figure below.
The size of the UBC is programmable through the UBC option byte, in increments of 1 page
(64-byte block) by programming the UBC option byte in ICP mode.
This divides the program memory into two areas:
Main program memory: Up to 8 Kbytes minus UBC
•
User-specific boot code (UBC): Configurable up to 8 Kbytes
•
The UBC area remains write-protected during in-application programming. This means that
the MASS keys do not unlock the UBC area. It protects the memory used to store the boot
DocID15590 Rev 812/116
UBC area
Program memory area
Data memory area ( 640 bytes)
Remains write protectedduring IAP
Data
EEPROM
memory
Write access possible forIAP
Option bytes
Programmable
bytes(1 page)
up to 8 Kbytes
(in 1 page steps)
area from 64
Low density
Flash program
memory
(8 Kbytes)
Product overviewSTM8S903K3 STM8S903F3
program, specific code libraries, reset and interrupt vectors, the reset routine and usually the
IAP and communication routines.
Figure 2: Flash memory organization
Read-out protection (ROP)
The read-out protection blocks reading and writing the Flash program memory and data
EEPROM memory in ICP mode (and debug mode). Once the read-out protection is activated,
any attempt to toggle its status triggers a global erase of the program and data memory. Even
if no protection can be considered as totally unbreakable, the feature provides a very high
level of protection for a general purpose microcontroller.
Clock controller4.5
The clock controller distributes the system clock (f
to the core and the peripherals. It also manages clock gating for low power modes and ensures
clock robustness.
Features
Clock prescaler: To get the best compromise between speed and current consumption
•
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler.
Safe clock switching: Clock sources can be changed safely on the fly in run mode
•
through a configuration register. The clock signal is not switched until the new clock source
is ready. The design guarantees glitch-free switching.
Clock management: To reduce power consumption, the clock controller can stop the
•
clock to the core, individual peripherals or memory.
Master clock sources: Four different clock sources can be used to drive the master
•
clock:
-
1-16 MHz high-speed external crystal (HSE)
MASTER
) coming from different oscillators
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Bit
STM8S903K3 STM8S903F3Product overview
Up to 16 MHz high-speed user-external clock (HSE user-ext)
-
16 MHz high-speed internal RC oscillator (HSI)
-
128 kHz low-speed internal RC (LSI)
-
Startup clock: After reset, the microcontroller restarts by default with an internal 2 MHz
•
clock (HSI/8). The prescaler ratio and clock source can be changed by the application
program as soon as the code execution starts.
Clock security system (CSS): This feature can be enabled by software. If an HSE clock
•
failure occurs, the internal RC (16 MHz/8) is automatically selected by the CSS and an
interrupt can optionally be generated.
Configurable main clock output (CCO): This outputs an external clock for use by the
•
application.
Table 2: Peripheral clock gating bit assignments in CLK_PCKENR1/2 registers
For efficent power management, the application can be put in one of four different low-power
modes. You can configure each mode to obtain the best compromise between lowest power
consumption, fastest start-up time and available wakeup sources.
Wait mode: In this mode, the CPU is stopped, but peripherals are kept running. The
•
wakeup is performed by an internal or external interrupt or reset.
Active halt mode with regulator on: In this mode, the CPU and peripheral clocks are
•
stopped. An internal wakeup is generated at programmable intervals by the auto wake up
unit (AWU). The main voltage regulator is kept powered on, so current consumption is
higher than in active halt mode with regulator off, but the wakeup time is faster. Wakeup
is triggered by the internal AWU interrupt, external interrupt or reset.
Active halt mode with regulator off: This mode is the same as active halt with regulator
•
on, except that the main voltage regulator is powered off, so the wake up time is slower.
Halt mode: In this mode the microcontroller uses the least power. The CPU and peripheral
•
clocks are stopped, the main voltage regulator is powered off. Wakeup is triggered by
external event or reset.
Watchdog timers4.7
The watchdog system is based on two independent timers providing maximum security to
the applications.
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Product overviewSTM8S903K3 STM8S903F3
Activation of the watchdog timers is controlled by option bytes or by software. Once activated,
the watchdogs cannot be disabled by the user program without performing a reset.
Window watchdog timer
The window watchdog is used to detect the occurrence of a software fault, usually generated
by external interferences or by unexpected logical conditions, which cause the application
program to abandon its normal sequence.
The window function can be used to trim the watchdog behavior to match the application
perfectly.
The application software must refresh the counter before time-out and during a limited time
window.
A reset is generated in two situations:
1. Timeout: At 16 MHz CPU clock the time-out period can be adjusted between 75 µs up to
64 ms.
2. Refresh out of window: The downcounter is refreshed before its value is lower than the
one stored in the window register.
Independent watchdog timer
The independent watchdog peripheral can be used to resolve processor malfunctions due to
hardware or software failures.
It is clocked by the 128 kHZ LSI internal RC clock source, and thus stays active even in case
of a CPU clock failure
The IWDG time base spans from 60 µs to 1 s.
Auto wakeup counter4.8
Used for auto wakeup from active halt mode
•
Clock source: Internal 128 kHz internal low frequency RC oscillator or external clock
•
LSI clock can be internally connected to TIM1 input capture channel 1 for calibration
•
Beeper4.9
The beeper function outputs a signal on the BEEP pin for sound generation. The signal is in
the range of 1, 2 or 4 kHz.
The beeper output port is only available through the alternate function remap option bit AFR7.
TIM1 - 16-bit advanced control timer4.10
This is a high-end timer designed for a wide range of control applications. With its
complementary outputs, dead-time control and center-aligned PWM capability, the field of
applications is extended to motor control, lighting and half-bridge driver
16-bit up, down and up/down autoreload counter with 16-bit prescaler
•
Four independent capture/compare channels (CAPCOM) configurable as input capture,
•
output compare, PWM generation (edge and center aligned mode) and single pulse mode
output
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STM8S903K3 STM8S903F3Product overview
Synchronization module to control the timer with external signals or to synchronise with
•
TIM5 or TIM6
Break input to force the timer outputs into a defined state
•
Three complementary outputs with adjustable dead time
•
Encoder mode
•
Interrupt sources: 3 x input capture/output compare, 1 x overflow/update, 1 x break
•
TIM5 - 16-bit general purpose timer4.11
16-bit autoreload (AR) up-counter
•
15-bit prescaler adjustable to fixed power of 2 ratios 1…32768
Interrupt sources: 3 x input capture/output compare, 1 x overflow/update
•
Synchronization module to control the timer with external signals or to synchronize with
•
TIM1 or TIM6
TIM6 - 8-bit basic timer4.12
Timer
size
(bits)
16TIM1
16TIM5
8TIM6
8-bit autoreload, adjustable prescaler ratio to any power of 2 from 1 to 128
•
Clock source: CPU clock
•
Interrupt source: 1 x overflow/update
•
Synchronization module to control the timer with external signals or to synchronize with
•
TIM1 or TIM5.
Table 3: TIM timer features
PrescalerCounter
to 65536
from 1 to 32768
from 1 to 128
Counting
mode
CAPCOM
channels
Complementary
outputs
Ext.
trigger
No03UpAny power of 2
No00UpAny power of 2
Timer
synchronization/
chaining
YesYes34Up/downAny integer from 1
Analog-to-digital converter (ADC1)4.13
The STM8S903K3 family products contain a 10-bit successive approximation A/D converter
(ADC1) with up to 7 external and 1 internal multiplexed input channels and the following main
features:
Input voltage range: 0 to V
•
DD
DocID15590 Rev 816/116
Product overviewSTM8S903K3 STM8S903F3
Conversion time: 14 clock cycles
•
Single and continuous and buffered continuous conversion modes
•
Buffer size (n x 10 bits) where n = number of input channels
•
Scan mode for single and continuous conversion of a sequence of channels
•
Analog watchdog capability with programmable upper and lower thresholds
•
Internal reference voltage on channel AIN7
•
Analog watchdog interrupt
•
External trigger input
•
Trigger from TIM1 TRGO
•
End of conversion (EOC) interrupt
•
Internal bandgap reference voltage
Channel AIN7 is internally connected to the internal bandgap reference voltage. The internal
bandgap reference is constant and can be used, for example, to monitor VDD. It is independent
of variations in VDDand ambient temperature TA.
Communication interfaces4.14
The following communication interfaces are implemented:
I/O pins used simultaneously for high current source/sink must be uniformly spaced around the package. In addition, the total driven current must respect the absolute maximum ratings ( see section
"Absolute maximum ratings").
(2)
When the MCU is in Halt/Active-halt mode, PA1 is automatically configured in input weak pull-up and cannot be used for waking up the device. In this mode, the output state of PA1 is not driven. It is
recommended to use PA1 only in input mode if Halt/Active-halt is used in the application.
(3)
In the open-drain output column, ‘T’ defines a true open-drain I/O (P-buffer, weak pull-up, and protection diode to VDDare not implemented)
(4)
The PD1 pin is in input pull-up during the reset phase and after internal reset release.
I/O pins used simultaneously for high current source/sink must be uniformly spaced around the package. In addition, the total driven current must respect the absolute maximum ratings ( see section
"Absolute maximum ratings").
(2)
When the MCU is in Halt/Active-halt mode, PA1 is automatically configured in input weak pull-up and cannot be used for waking up the device. In this mode, the output state of PA1 is not driven. It is
recommended to use PA1 only in input mode if Halt/Active-halt is used in the application.
(3)
In the open-drain output column, ‘T’ defines a true open-drain I/O (P-buffer, weak pull-up, and protection diode to VDDare not implemented)
(4)
The PD1 pin is in input pull-up during the reset phase and after internal reset release.
25/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Pinout and pin description
Alternate function remapping5.6
As shown in the rightmost column of the pin description table, some alternate functions can
be remapped at different I/O ports by programming one of eight AFR (alternate function
remap) option bits. When the remapping option is active, the default alternate function is no
longer available.
To use an alternate function, the corresponding peripheral must be enabled in the peripheral
registers.
Alternate function remapping does not effect GPIO capabilities of the I/O ports (see the GPIO
section of the family reference manual, RM0016).
DocID15590 Rev 826/116
0x00 9FFF
Flash program memory
(8 Kbytes)
0x00 0000
RAM
0x00 03FF
(1 Kbyte)
513 bytes stack
0x00 4000
0x00 427F
640 bytes data EEPROM
Reserved
Reserved
Reserved
0x00 4280
0x00 A000
0x00 47FF
0x00 8000
32 interrupt vectors
0x00 807F
GPIO and periph. reg.
0x00 5000
0x00 57FF
0x00 5800
0x00 7FFF
0x00 480B
0x00 4FFF
0x00 7EFF
CPU/SWIM/debug/ITC
registers
0x00 7F00
Reserved
Reserved
Option bytes
0x00 480A
0x00 4800
0x00 0800
0x00 3FFF
0x00 8080
Reserved
Unique ID
0x00 4864
0x00 4865
0x00 4870
0x00 4871
Memory and register mapSTM8S903K3 STM8S903F3
Memory and register map6
Memory map6.1
Figure 7: Memory map
27/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Memory and register map
Register map6.2
I/O port hardware register map6.2.1
Table 7: I/O port hardware register map
0x00 5000
0x00 5005
0x00 500A
Port A
Port B
Port C
Register nameRegister labelBlockAddress
Reset
status
0x00Port A data output latch registerPA_ODR
(1)
Port A input pin value registerPA_IDR0x00 5001
0xXX
0x00Port A data direction registerPA_DDR0x00 5002
0x00Port A control register 1PA_CR10x00 5003
0x00Port A control register 2PA_CR20x00 5004
0x00Port B data output latch registerPB_ODR
(1)
Port B input pin value registerPB_IDR0x00 5006
0xXX
0x00Port B data direction registerPB_DDR0x00 5007
0x00Port B control register 1PB_CR10x00 5008
0x00Port B control register 2PB_CR20x00 5009
0x00Port C data output latch registerPC_ODR
(1)
Port C input pin value registerPB_IDR0x00 500B
0xXX
0x00Port C data direction registerPC_DDR0x00 500C
0x00 500F
0x00 5014
Port D
Port E
0x00Port C control register 1PC_CR10x00 500D
0x00Port C control register 2PC_CR20x00 500E
0x00Port D data output latch registerPD_ODR
(1)
Port D input pin value registerPD_IDR0x00 5010
0xXX
0x00Port D data direction registerPD_DDR0x00 5011
0x02Port D control register 1PD_CR10x00 5012
0x00Port D control register 2PD_CR20x00 5013
0x00Port E data output latch registerPE_ODR
(1)
Port E input pin value registerPE_IDR0x00 5015
0xXX
0x00Port E data direction registerPE_DDR0x00 5016
0x00Port E control register 1PE_CR10x00 5017
DocID15590 Rev 828/116
Memory and register mapSTM8S903K3 STM8S903F3
0x00 5019
Port F
(1)
Depends on the external circuitry.
General hardware register map6.2.2
0x00 501E to
Reserved area (60 bytes)
Register nameRegister labelBlockAddress
Port F input pin value registerPF_IDR0x00 501A
Table 8: General hardware register map
Register nameRegister labelBlockAddress
Reset
status
0x00Port E control register 2PE_CR2Port E0x00 5018
0x00Port F data output latch registerPF_ODR
0xXX
0x00Port F data direction registerPF_DDR0x00 501B
0x00Port F control register 1PF_CR10x00 501C
0x00Port F control register 2PF_CR20x00 501D
Reset
status
(1)
0x00 5059
0x00 505A
0x00 505B
0x00 505C
0x00 505D
0x00 505E
0x00 505F
0x00 5060 to
0x00 5061
0x00 5062
0x00 5063
Flash
FLASH _IAPSR
Reserved area (2 bytes)
FLASH _PUKRFlash
Reserved area (1 byte)
0x00Flash control register 1FLASH_CR1
0x00Flash control register 2FLASH_CR2
0xFFFlash complementary control register 2FLASH_NCR2
Option bytes contain configurations for device hardware features as well as the memory
protection of the device. They are stored in a dedicated block of the memory. Except for the
ROP (read-out protection) byte, each option byte has to be stored twice, in a regular form
(OPTx) and a complemented one (NOPTx) for redundancy.
Option bytes can be modified in ICP mode (via SWIM) by accessing the EEPROM address
shown in the table below.
Option bytes can also be modified ‘on the fly’ by the application in IAP mode, except the ROP
option that can only be modified in ICP mode (via SWIM).
Refer to the STM8S Flash programming manual (PM0051) and STM8 SWIM communication
protocol and debug module user manual (UM0470) for information on SWIM programming
procedures.
1: Port B4 alternate function = ADC_ETR; port B5 alternate function
= TIM1_BKIN.
AFR3 Alternate function remapping option 3
(2)
(2)
.
DocID15590 Rev 846/116
Option bytesSTM8S903K3 STM8S903F3
Option byte no.
Description
(1)
0: AFR3 remapping option inactive: Default alternate function
1: Port C3 alternate function = TLI.
AFR2 Alternate function remapping option 2
Reserved.
(1)
Do not use more than one remapping option in the same port.
(2)
Refer to pinout description.
Table 15: STM8S903K3 alternate function remapping bits [1:0] for 32-pin packages
AFR1 option bit
value
value
00
AFR1 and AFR0 remapping options inactive:
Default alternate functions
PC510
Alternate function mappingI/O portAFR0 option bit
(1)
TIM5_CH1
TIM1_CH1PC6
(2)
.
11
(1)
Refer to pinout description.
TIM1_CH2PC7
PA301
SPI_NSS
TIM5_CH3PD2
TIM5_CH3PD2
TIM5_CH1PC5
TIM1_CH1PC6
TIM1_CH2PC7
TIM1_CH3NPC2
TIM1_CH2NPC1
TIM1_CH1NPE5
UART1_TXPA3
UART1_RXPF4
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STM8S903K3 STM8S903F3Option bytes
Table 16: STM8S903F3 alternate function remapping bits [1:0] for 20-pin packages
AFR1 option bit
value
value
00
11
Alternate function mappingI/O portAFR0 option bit
AFR1 and AFR0 remapping options inactive:
Default alternate functions
PC510
TIM5_CH1
(1)
TIM1_CH1PC6
TIM1_CH2PC7
PA301
SPI_NSS
TIM5_CH3PD2
TIM5_CH3PD2
TIM5_CH1PC5
TIM1_CH1PC6
TIM1_CH2PC7
—PC2
—PC1
(1)
Refer to pinout description.
TIM1_CH1NPE5
UART1_TXPA3
UART1_RXPF4
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Unique IDSTM8S903K3 STM8S903F3
Unique ID9
The devices feature a 96-bit unique device identifier which provides a reference number that
is unique for any device and in any context. The 96 bits of the identifier can never be altered
by the user.
The unique device identifier can be read in single bytes and may then be concatenated using
a custom algorithm.
The unique device identifier is ideally suited:
For use as serial numbers
•
For use as security keys to increase the code security in the program memory while using
•
and combining this unique ID with software cryptograhic primitives and protocols before
programming the internal memory.
To activate secure boot processes
•
Table 17: Unique ID registers (96 bits)
Address
0x4865
0x4867
0x486A
description
X co-ordinate
on the wafer
Y co-ordinate
on the wafer
Lot number
Unique ID bitsContent
01234567
U_ID[7:0]
U_ID[15:8]0x4866
U_ID[23:16]
U_ID[31:24]0x4868
U_ID[39:32]Wafer number0x4869
U_ID[47:40]
U_ID[55:48]0x486B
U_ID[63:56]0x486C
U_ID[71:64]0x486D
U_ID[79:72]0x486E
U_ID[87:80]0x486F
U_ID[95:88]0x4870
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STM8 pin
STM8S903K3 STM8S903F3Electrical characteristics
Electrical characteristics10
Parameter conditions10.1
Unless otherwise specified, all voltages are referred to VSS.
Minimum and maximum values10.1.1
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100 % of the devices with an ambient temperature at TA= 25 °C and TA= T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on characterization,
the minimum and maximum values refer to sample tests and represent the mean value plus
or minus three times the standard deviation (mean ± 3 Σ).
Typical values10.1.2
Unless otherwise specified, typical data are based on TA= 25 °C, VDD= 5 V. They are given
only as design guidelines and are not tested.
Amax
(given by
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ± 2 Σ).
Typical curves10.1.3
Unless otherwise specified, all typical curves are given only as design guidelines and are not
tested.
Loading capacitor10.1.4
The loading conditions used for pin parameter measurement are shown in the following figure.
Figure 8: Pin loading conditions
Pin input voltage10.1.5
The input voltage measurement on a pin of the device is described in the following figure.
DocID15590 Rev 850/116
STM8 pin
V
IN
Electrical characteristicsSTM8S903K3 STM8S903F3
Figure 9: Pin input voltage
Absolute maximum ratings10.2
Stresses above those listed as ‘absolute maximum ratings’ may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 18: Voltage characteristics
UnitMaxMinRatingsSymbol
V
DDx
- V
SS
Supply voltage
(1)
6.5-0.3
V
|V
|V
V
IN
DDx
SSx
ESD
- VDD|
- VSS|
Input voltage on true open drain pins
Input voltage on any other pin
(2)
Variations between different power pins
Variations between all the different ground
pins
Electrostatic discharge voltage
(2)
6.5VSS- 0.3
VDD+ 0.3VSS- 0.3
50-
50-
See "Absolute
maximum ratings
V
mV
(electrical sensitivity)"
(1)
All power (VDD) and ground (VSS) pins must always be connected to the external power supply
(2)
I
INJ(PIN)
cannot be respected, the injection current must be limited externally to the I
must never be exceeded. This is implicitly insured if VINmaximum is respected. If VINmaximum
INJ(PIN)
value. A positive
injection is induced by VIN>VDDwhile a negative injection is induced by VIN<VSS. For true open-drain
pads, there is no positive injection current, and the corresponding VINmaximum must always be respected
Table 19: Current characteristics
I
VDD
RatingsSymbol
Total current into VDDpower lines (source)
(2)
Max
(1)
Unit
mA100
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STM8S903K3 STM8S903F3Electrical characteristics
RatingsSymbol
I
VSS
I
IO
Total current out of VSSground lines (sink)
Output current sunk by any I/O and control pin
(2)
Output current source by any I/Os and control pin
I
INJ(PIN)
(3) (4)
Injected current on NRST pin
Injected current on OSCIN pin
Injected current on any other pin
INJ(PIN)
(3)
Total injected current (sum of all I/O and control pins)
must never be exceeded. This is implicitly insured if VINmaximum is respected. If VINmaximum
ΣI
INJ(PIN)
(1)
Data based on characterization results, not tested in production.
(2)
All power (VDD) and ground (VSS) pins must always be connected to the external supply.
(3)
I
cannot be respected, the injection current must be limited externally to the I
(5)
(5)
INJ(PIN)
value. A positive
Max
(1)
80
20
- 20
± 4
± 4
± 4
± 20
Unit
injection is induced by VIN>VDDwhile a negative injection is induced by VIN<VSS. For true open-drain
pads, there is no positive injection current, and the corresponding VINmaximum must always be respected
(4)
ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins
should be avoided as this significantly reduces the accuracy of the conversion being performed on
another analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins
which may potentially inject negative current. Any positive injection current within the limits specified for
I
INJ(PIN)
(5)
and ΣI
INJ(PIN)
in the I/O port pin characteristics section does not affect the ADC accuracy.
When several inputs are submitted to a current injection, the maximum ΣI
INJ(PIN)
is the absolute sum
of the positive and negative injected currents (instantaneous values). These results are based on
characterization with ΣI
INJ(PIN)
maximum current injection on four I/O port pins of the device.
STG
J
Table 20: Thermal characteristics
UnitValueRatingsSymbol
-65 to +150Storage temperature rangeT
°C
150Maximum junction temperatureT
DocID15590 Rev 852/116
Electrical characteristicsSTM8S903K3 STM8S903F3
Operating conditions10.3
Table 21: General operating conditions
UnitMaxMinConditionsParameterSymbol
CPU
DD
VCAP
(3)
P
D
(1)
C
: capacitance of external
EXT
capacitor
ESR of external capacitor
for suffix 6
°C for suffix 3
(2)
MHz160Internal CPU clock frequencyf
V5.52.95Standard operating voltageV
nF3300470
Ω0.3-at 1 MHz
nH15-ESL of external capacitor
mW182-TSSOP20Power dissipation at TA= 85 °C
1000-SO20W
198-UFQFPN20
333-LQFP32
526-UFQFPN32
333-SDIP32
45-TSSOP20Power dissipation at TA= 125
250-SO20W
49-UFQFPN20
83-LQFP32
132-UFQFPN32
83-SDIP32
T
A
°C85-40Maximum power dissipationAmbient temperature for 6 suffix
version
125-40Maximum power dissipationAmbient temperature for 3 suffix
version
J
105-406 suffix versionJunction temperature rangeT
130-403 suffix version
(1)
Care should be taken when selecting the capacitor, due to its tolerance, as well as the parameter
dependency on temperature, DC bias and frequency in addition to other factors. The parameter maximum
value must be respected for the full application range.
(2)
This frequency of 1 MHz as a condition for VCAP parameters is given by design of internal regulator
53/116DocID15590 Rev 8
(3)
16
12
8
4
0
2.95
4.0
5.0
5.5
f
CPU
(MHz)
Functionality guaranteed
@TA-40 to 125 °C
Supply voltage
Functionality
not
guaranteed
in this area
To calculate P
Dmax(TA
), use the formula P
Dmax
= (T
STM8S903K3 STM8S903F3Electrical characteristics
- TA)/ΘJA(see Thermal characteristics).
Jmax
VDD
Figure 10: f
CPUmax
versus V
DD
Table 22: Operating conditions at power-up/power-down
(1)
UnitMaxTypMinConditionsParameterSymbol
µs/V∞2VDDrise time ratet
∞2VDDfall time rate
TEMP
V
IT+
threshold
V
IT-
2.82.652.5Brown-out reset
threshold
V
HYS(BOR)
hysteresis
(1)
Reset is always generated after a t
still above the minimum ooperating voltage (VDDmin) when the t
delay. The application must ensure that VDDis
TEMP
delay has elapsed.
TEMP
VCAP external capacitor10.3.1
Stabilization for the main regulator is achieved connecting an external capacitor C
V
pin. C
CAP
the series inductance to less than 15 nH.
is specified in the Operating conditions section. Care should be taken to limit
EXT
DocID15590 Rev 854/116
EXT
ms1.7VDDrisingReset release delayt
V2.852.72.6Power-on reset
mV70Brown-out reset
to the
C
Rleak
ESRESL
Electrical characteristicsSTM8S903K3 STM8S903F3
Figure 11: External capacitor C
EXT
1. ESR is the equivalent series resistance and ESL is the equivalent inductance.
Supply current characteristics10.3.2
The current consumption is measured as described in Pin input voltage.
Total current consumption in run mode10.3.2.1
The MCU is placed under the following conditions:
All I/O pins in input mode with a static value at VDDor VSS(no load)
•
All peripherals are disabled (clock stopped by peripheral clock gating registers) except if
•
explicitly mentioned.
Subject to general operating conditions for VDDand TA.
Table 23: Total current consumption with code execution in run mode at VDD= 5 V
I
DD(RUN)
I
DD(RUN)
Supply current
in run mode,
code executed
from RAM
Supply current
in run mode,
code executed
from Flash
Supply current
in run mode,
code executed
from Flash
f
= f
CPU
MASTER
16 MHz
= f
CPU
MASTER
125 kHz
f
= f
CPU
MASTER
15.625 kHz
f
= f
CPU
MASTER
128 kHz
f
= f
CPU
MASTER
16 MHz
f
= f
CPU
MASTER
2 MHz
=
/128 =
/128 =
=
=
=
(2)
(1)
TypConditionsParameterSymbol
Max
Unit
-2.3HSE crystal osc. (16 MHz)
2.352HSE user ext. clock (16 MHz)
21.7HSI RC osc. (16 MHz)
-0.86HSE user ext. clock (16 MHz)f
0.870.7HSI RC osc. (16 MHz)
0.580.46HSI RC osc. (16 MHz/8)
mA
0.550.41LSI RC osc. (128 kHz)
-4.5HSE crystal osc. (16 MHz)
4.754.3HSE user ext. clock (16 MHz)
4.53.7HSI RC osc. (16 MHz)
1.050.84HSI RC osc. (16 MHz/8)
mA
55/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Electrical characteristics
f
CPU
= f
MASTER
/128 =
125 kHz
f
CPU
= f
MASTER
/128 =
15.625 kHz
f
CPU
= f
MASTER
=
128 kHz
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
Table 24: Total current consumption with code execution in run mode at VDD= 3.3 V
(1)
TypConditionsParameterSymbol
Max
Unit
0.90.72HSI RC osc. (16 MHz)
0.580.46HSI RC osc. (16 MHz/8)
0.570.42LSI RC osc. (128 kHz)
I
DD(RUN)
Supply current
in run mode,
code executed
from RAM
Supply current
in run mode,
code executed
from Flash
f
CPU
= f
MASTER
=
16 MHz
CPU
= f
MASTER
/
128 = 125 kHz
f
CPU
= f
MASTER
/
128 = 15.625 kHz
f
CPU
= f
MASTER
=
128 kHz
f
CPU
= f
MASTER
=
16 MHz
f
CPU
= f
MASTER
=
2 MHz
f
CPU
= f
MASTER
/
128 = 125 kHz
(2)
TypConditionsParameterSymbol
Max
(1)
Unit
-1.8HSE crystal osc. (16 MHz)
2.32HSE user ext. clock (16 MHz)
21.5HSI RC osc. (16 MHz)
-0.81HSE user ext. clock (16 MHz)f
0.870.7HSI RC osc. (16 MHz)
0.580.46HSI RC osc. (16 MHz/8)
0.550.41LSI RC osc. (128 kHz)
mA
-4HSE crystal osc. (16 MHz)
4.73.9HSE user ext. clock (16 MHz)
4.53.7HSI RC osc. (16 MHz)
1.050.84HSI RC osc. (16 MHz/8)
0.90.72HSI RC osc. (16 MHz)
f
CPU
= f
MASTER
/
HSI RC osc. (16 MHz/8)
DocID15590 Rev 856/116
0.580.46
Electrical characteristicsSTM8S903K3 STM8S903F3
128 = 15.625 kHz
f
CPU
= f
MASTER
=
128 kHz
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
Total current consumption in wait mode10.3.2.2
Table 25: Total current consumption in wait mode at VDD= 5 V
f
= f
CPU
16 MHz
MASTER
=
TypConditionsParameterSymbol
Max
(1)
Unit
0.570.42LSI RC osc. (128 kHz)
TypConditionsParameterSymbol
Max
(1)
Unit
-1.6HSE crystal osc. (16 MHz)
1.31.1HSE user ext. clock (16 MHz)
1.10.89HSI RC osc. (16 MHz)
f
I
DD(WFI)
Supply
current in
= f
CPU
125 kHz
MASTER
/128 =
wait mode
f
CPU
= f
MASTER
/128 =
15.625 kHz
f
CPU
= f
MASTER
=
128 kHz
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
Table 26: Total current consumption in wait mode at VDD= 3.3 V
HSE crystal osc.
(16 MHz)
HSE user ext. clock
I
DD(WFI)
Supply current
in wait mode
f
= f
CPU
16 MHz
MASTER
=
(16 MHz)
(2)
0.880.7HSI RC osc. (16 MHz)
mA
0.570.45HSI RC osc. (16 MHz/8)
0.540.4LSI RC osc. (128 kHz)
TypConditionsParameterSymbol
Max
(1)
Unit
-1.1
mA
1.31.1
57/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Electrical characteristics
HSI RC osc.
(16 MHz)
f
CPU
= f
MASTER
/ 128 =
125 kHz
f
CPU
= f
MASTER
/ 128 =
15.625 kHz
f
CPU
= f
MASTER
=
128 kHz
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
HSI RC osc.
(16 MHz)
HSI RC osc.
(16 MHz/8)
LSI RC osc.
(128 kHz)
Total current consumption in active halt mode10.3.2.3
(2)
TypConditionsParameterSymbol
Max
(1)
Unit
1.10.89
0.880.7
0.570.45
0.540.4
I
DD(AH)
I
DD(AH)
I
DD(AH)
I
DD(AH)
I
DD(AH)
Table 27: Total current consumption in active halt mode at VDD= 5 V
Conditions
Main
ParameterSymbol
Supply current
in active halt
mode
Supply current
in active halt
mode
Supply current
in active halt
mode
Supply current
in active halt
mode
Supply current
in active halt
mode
voltage
regulator
(2)
(MVR)
(3)
Clock sourceFlash mode
HSE crystal osc.
Operating modeOn
(16 MHz)
LSI RC osc.
Operating modeOn
(128 kHz)
HSE crystal osc.
Power-down modeOn
(16 MHz)
LSI RC osc.
Power-down modeOn
(128 kHz)
LSI RC osc.
Operating modeOff
(128 kHz)
Typ
Max
at 85
°C
(1)
Max
at 125
°C
(1)
--1030
300260200
--970
230200150
1108566
Unit
μA
DocID15590 Rev 858/116
Electrical characteristicsSTM8S903K3 STM8S903F3
Conditions
Main
ParameterSymbol
voltage
regulator
(2)
(MVR)
(3)
Supply current
I
DD(AH)
in active halt
Power-down mode
mode
(1)
Data based on characterization results, not tested in production
(2)
Configured by the REGAH bit in the CLK_ICKR register.
(3)
Configured by the AHALT bit in the FLASH_CR1 register.
Table 28: Total current consumption in active halt mode at VDD= 3.3 V
Conditions
Main
I
DD(AH)
ParameterSymbol
Supply current
in active halt
voltage
regulator
(2)
(MVR)
(3)
Clock sourceFlash mode
HSE crystal
osc. (16 MHz)Operating modeOn
mode
Clock sourceFlash mode
LSI RC osc.
(128 kHz)
Typ
Typ
Max at
85 °C
(1)
Max
at 85
°C
(1)
Max
at 125
°C
(1)
402010
Max at
125 °C
(1)
Unit
Unit
μA--550
LSI RC osc.
I
DD(AH)
Supply current
Operating mode
(128 kHz)
in active halt
I
DD(AH)
mode
On
HSE crystal
osc. (16 MHz)
Power-down
mode
I
DD(AH)
Supply current
I
DD(AH)
in active halt
mode
Off
I
DD(AH)
(1)
Data based on characterization results, not tested in production
(2)
Configured by the REGAH bit in the CLK_ICKR register.
(3)
Configured by the AHALT bit in the FLASH_CR1 register.
Operating mode
Power-down
mode
LSI RC osc.
(128 kHz)
(128 kHz)
290260200
--970
μA
230200150
1058066LSI RC osc.
351810
59/116DocID15590 Rev 8
Total current consumption in halt mode10.3.2.4
Table 29: Total current consumption in halt mode at VDD= 5 V
STM8S903K3 STM8S903F3Electrical characteristics
Flash in operating mode, HSI
clock after wakeup
I
DD(H)
Supply current in
halt mode
Flash in power-down mode, HSI
clock after wakeup
(1)
Data based on characterization results, not tested in production
Table 30: Total current consumption in halt mode at VDD= 3.3 V
Flash in operating mode, HSI
clock after wakeup
I
DD(H)
Supply current in
halt mode
Flash in power-down mode, HSI
clock after wakeup
(1)
Data based on characterization results, not tested in production
(1)
Max at
125 °C
(1)
Unit
TypConditionsParameterSymbol
Max at
85 °C
1057563
μA
55206.0
(1)
Max at
125 °C
(1)
Unit
TypConditionsParameterSymbol
Max at
85 °C
1007560
μA
30174.5
t
WU(WFI)
t
WU(AH)
Low power mode wakeup times10.3.2.5
Wakeup time from
wait mode to run
(3)
Wakeup time active
halt mode to run
(3)
mode
Wakeup time active
halt mode to run
(3)
mode
Table 31: Wakeup times
CPU
= f
MASTER
= 16 MHzmode
MVR voltage
Flash in operating
regulator
(4)
on
MVR voltage
regulator
(4)
on
mode
Flash in
power-down
DocID15590 Rev 860/116
(5)
(5)
HSI
(after
wakeup)
HSI
(after
wakeup)mode
(1)
TypConditionsParameterSymbol
Max
See
-0 to 16 MHz
note
Unit
(2)
-0.56f
(6)
1
(6)
(6)
2
μs
-3
Electrical characteristicsSTM8S903K3 STM8S903F3
(1)
TypConditionsParameterSymbol
Max
Unit
Wakeup time active
MVR voltage
Flash in operating
halt mode to run
(3)
mode
Wakeup time active
halt mode to run
(3)
mode
regulator
(4)
off
MVR voltage
regulator
(4)
off
mode
Flash in
power-down
Wakeup time from
t
WU(H)
(1)
Data guaranteed by design, not tested in production.
(2)
t
WU(WFI)
(3)
Measured from interrupt event to interrupt vector fetch.
(4)
Configured by the REGAH bit in the CLK_ICKR register.
(5)
Configured by the AHALT bit in the FLASH_CR1 register.
(6)
Plus 1 LSI clock depending on synchronization.
halt mode to run
(3)
mode
= 2 x 1/f
master
+ 6 x 1/f
CPU.
(5)
(5)
(5)
(5)
HSI
(after
wakeup)
HSI
(after
wakeup)mode
(6)
(6)
-48
-50
-52Flash in operating mode
-54Flash in power-down mode
Total current consumption and timing in forced reset state10.3.2.6
Table 32: Total current consumption and timing in forced reset state
I
DD(R)
(2)
state
t
RESETBL
Reset pin release to
vector fetch
(1)
Data guaranteed by design, not tested in production.
(2)
Characterized with all I/Os tied to VSS.
Current consumption of on-chip peripherals10.3.2.7
Subject to general operating conditions for VDDand TA.
TypConditionsParameterSymbol
Max
(1)
Unit
-400VDD= 5 VSupply current in reset
μA
-300VDD= 3.3 V
μs150-
61/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Electrical characteristics
HSI internal RC/f
CPU
= f
MASTER
= 16 MHz, VDD= 5 V
Table 33: Peripheral current consumption
UnitTyp.ParameterSymbol
(2)
(2)
(1)
(1)
(2)
(1)
(3)
130TIM5 supply current
50TIM6 timer supply current
120UART1 supply current
45SPI supply current
65I2C supply current
1000ADC1 supply current when converting
I
DD(TIM1)
I
DD(TIM5)
I
DD(TIM6)
I
DD(UART1)
I
DD(SPI)
I
DD(I2C)
I
DD(ADC1)
(1)
Data based on a differential IDDmeasurement between reset configuration and timer
µA210TIM1 supply current
counter running at 16 MHz. No IC/OC programmed (no I/O pads toggling). Not tested in
production.
(2)
Data based on a differential IDDmeasurement between the on-chip peripheral when kept
under reset and not clocked and the on-chip peripheral when clocked and not kept under
reset. No I/O pads toggling. Not tested in production.
(3)
Data based on a differential IDDmeasurement between reset configuration and continuous
A/D conversions. Not tested in production.
Current consumption curves10.3.2.8
The following figures show typical current consumption measured with code executing in
RAM.
Figure 12: Typ I
DD(RUN)
vs. VDDHSE user external clock, f
CPU
= 16 MHz
DocID15590 Rev 862/116
Electrical characteristicsSTM8S903K3 STM8S903F3
Figure 13: Typ I
Figure 14: Typ I
DD(RUN)
DD(RUN)
vs. f
HSE user external clock, VDD= 5 V
CPU
vs. VDDHSI RC osc, f
CPU
= 16 MHz
63/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Electrical characteristics
Figure 15: Typ I
Figure 16: Typ I
DD(WFI)
DD(WFI)
vs. VDDHSE user external clock, f
vs. f
HSE user external clock, VDD= 5 V
CPU
CPU
= 16 MHz
Figure 17: Typ I
DD(WFI)
DocID15590 Rev 864/116
vs. VDDHSI RC osc, f
CPU
= 16 MHz
External clock sources and timing characteristics10.3.3
V
HSEH
V
HSEL
External clock
source
OSCIN
f
HSE
STM8
HSE user external clock
Subject to general operating conditions for VDDand TA.
Table 34: HSE user external clock characteristics
Electrical characteristicsSTM8S903K3 STM8S903F3
UnitMaxMinConditionsParameterSymbol
f
HSE_ext
User external clock source
frequency
(1)
V
HSEH
OSCIN input pin high level
voltage
V
HSEL
(1)
OSCIN input pin low level
voltage
LEAK_HSE
(1)
Data based on characterization results, not tested in production.
OSCIN input leakage currentI
VSS< VIN< V
DD
Figure 18: HSE external clocksource
MHz160
DD
VDD+ 0.3 V0.7 x V
V
V
SS
0.3 x V
DD
μA+1-1
f
HSE
HSE crystal/ceramic resonator oscillator
The HSE clock can be supplied with a 1 to 16 MHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and start-up stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
Table 35: HSE oscillator characteristics
UnitMaxTypMinConditionsParameterSymbol
External high speed
oscillator frequency
MHz16-1
65/116DocID15590 Rev 8
OSCOUT
OSCIN
f
HSE
to core
C
L1
C
L2
R
F
STM8
Resonator
Consumption
control
g
m
R
m
C
m
L
m
C
O
Resonator
STM8S903K3 STM8S903F3Electrical characteristics
UnitMaxTypMinConditionsParameterSymbol
F
(1)
C
I
DD(HSE)
g
m
SU(HSE)
(1)
C is approximately equivalent to 2 x crystal Cload.
(2)
The oscillator selection can be optimized in terms of supply current using a high quality resonator with
Feedback resistorR
Recommended load
capacitance
HSE oscillator power
consumption
Oscillator
transconductance
(4)
(2)
C = 20 pF,
f
= 16 MHz
OSC
C = 10 pF,
f
=16 MHz
OSC
VDDis stabilizedStartup timet
--
--
6 (startup)
1.6 (stabilized)
6 (startup)
1.2 (stabilized)
(3)
(3)
mA/V--5
small Rmvalue. Refer to crystal manufacturer for more details
(3)
Data based on characterization results, not tested in production.
(4)
t
SU(HSE)
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
kΩ-220-
pF20--
mA
ms-1-
Figure 19: HSE oscillator circuit diagram
HSE oscillator critical gmequation
g
= (2 × Π × f
mcrit
)2× Rm(2Co + C)
HSE
DocID15590 Rev 866/116
2
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1= CL2= C: Grounded external capacitance
Electrical characteristicsSTM8S903K3 STM8S903F3
HSI
ACC
HSI
gm>> g
mcrit
Internal clock sources and timing characteristics10.3.4
Subject to general operating conditions for VDDand TA.
High speed internal RC oscillator (HSI)
Table 36: HSI oscillator characteristics
Frequencyf
Accuracy of HSI
oscillator
Accuracy of HSI
oscillator (factory
calibrated)
User-trimmed with
CLK_HSITRIMR register for
given VDDand T
conditions
VDD= 5 V, TA= 25°C
A
(1)
(2)
VDD= 5 V,
25 °C ≤ TA≤ 85 °C
UnitMaxTypMinConditionsParameterSymbol
MHz-16-
(3)
--
1.0
1--1
%
2.0--2.0
2.95 ≤ VDD≤ 5.5 V,
-40 °C ≤ TA≤ 125 °C
t
su(HSI)
HSI oscillator
wakeup time
including
calibration
I
DD(HSI)
HSI oscillator
power
consumption
(1)
Refer to application note.
(2)
Data based on characterization results, not tested in production.
(3)
Guaranteed by design, not tested in production.
-3.0
(2)
(2)
-
--
170-
3.0
1.0
250
(3)
(2)
μs
μA
67/116DocID15590 Rev 8
Figure 20: Typical HSI frequency variation vs VDD@ 4 temperatures
Low speed internal RC oscillator (LSI)
Subject to general operating conditions for VDDand TA.
STM8S903K3 STM8S903F3Electrical characteristics
LSI
su(LSI)
DD(LSI)
Table 37: LSI oscillator characteristics
Frequencyf
LSI oscillator wake-up timet
LSI oscillator power consumptionI
Figure 21: Typical LSI frequency variation vs VDD@ 4 temperatures
UnitMaxTypMinParameterSymbol
kHz150128110
μs7--
μA-5-
DocID15590 Rev 868/116
Memory characteristics10.3.5
RAM and hardware registers
Table 38: RAM and hardware registers
Electrical characteristicsSTM8S903K3 STM8S903F3
UnitMinConditionsParameterSymbol
V
RM
(1)
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)
Data retention mode
(1)
Halt mode (or reset)
V
IT-max
(2)
V
or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.
(2)
Refer to the Operating conditions section for the value of V
IT-max
Flash program memory/data EEPROM memory
Table 39: Flash program memory/data EEPROM memory
ConditionsParameterSymbol
V
DD
Operating voltage
(all modes, execution/
f
CPU
≤ 16 MHz
Min
(1)
UnitMaxTyp
V5.5-2.95
write/erase)
t
prog
Standard programming time
(including erase) for
byte/word/block (1 byte/
6.66-
4 bytes/64 bytes)
Fast programming time for
1 block (64 bytes)
3.333-
ms
t
erase
N
RW
t
RET
Erase time for 1 block
(64 bytes)
Erase/write cycles
(2)
(program memory)
Erase/write cycles
(data memory)
(2)
Data retention (program
and data memory) after 10k
erase/write cycles at
TA= +55 °C
TA= +85 °C
TA= +125 °C
T
= 55°C
RET
3.333-
--10 k
cycles
-1 M300 k
years--20
69/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Electrical characteristics
ConditionsParameterSymbol
Min
(1)
UnitMaxTyp
Data retention (data
memory) after 300k
erase/write cycles at
RET
= 85°C
--1
T
TA= +125 °C
I
DD
Supply current (Flash
programming or erasing
mA-2-
for 1 to 128 bytes)
(1)
Data based on characterization results, not tested in production.
(2)
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
even when a write/erase operation addresses a single byte.
I/O port pin characteristics10.3.6
General characteristics
Subject to general operating conditions for VDDand TAunless otherwise specified. All unused
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
V
IL
V
IH
V
hys
R
pu
tR, t
Table 40: I/O static characteristics
UnitMaxTypMinConditionsParameterSymbol
Input low level voltage
VDD= 5 V
--0.3 V
0.3 x
V
DD
V
Input high level voltage
Hysteresis
Pull-up resistor
F
Rise and fall time
(10 % - 90 %)
(1)
VDD= 5 V, VIN= V
Fast I/Os
Load = 50 pF
SS
0.7 x
V
DD
Standard and high sink
I/Os
VDD+
-
0.3
mV-700-
kΩ805530
(3)
--
--
35
125
(3)
ns
Load = 50 pF
(3)
Fast I/Os
--
20
DocID15590 Rev 870/116
Load = 20 pF
Electrical characteristicsSTM8S903K3 STM8S903F3
UnitMaxTypMinConditionsParameterSymbol
Standard and high sink
I/Os
--
50
(3)
Load = 20 pF
I
lkg
I
lkg ana
I
lkg(inj)
Digital input leakage current
Analog input leakage current
Leakage current in adjacent
I/O
(1)
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not
VSS≤ VIN≤V
VSS≤ VIN≤ V
DD
DD
Injection current ±4 mA
--
--
--
±1
±250
±1
(2)
(2)
(2)
tested in production.
(2)
Data based on characterisation results, not tested in production.
Figure 36: Typical NRST pull-up resistance vs VDD@ 4 temperatures
Figure 37: Typical NRST pull-up current vs VDD@ 4 temperatures
The reset network shown in the following figure protects the device against parasitic resets.
The user must ensure that the level on the NRST pin can go below V
IL(NRST)
max. (see Table
40: I/O static characteristics ), otherwise the reset is not taken into account internally.
For power consumption sensitive applications, the external reset capacitor value can be
reduced to limit the charge/discharge current. If NRST signal is used to reset external circuitry,
attention must be taken to the charge/discharge time of the external capacitor to fulfill the
external devices reset timing conditions. Minimum recommended capacity is 100 nF.
DocID15590 Rev 880/116
External
reset
circuit
(optional)
0.1 μF
NRST
VDD
RPU
Filter
Internal reset
STM8
Electrical characteristicsSTM8S903K3 STM8S903F3
Figure 38: Recommended reset pin protection
SPI serial peripheral interface10.3.8
Unless otherwise specified, the parameters given in the following table are derived from tests
performed under ambient temperature, f
t
MASTER
= 1/f
MASTER
.
MASTER
Refer to I/O port characteristics for more details on the input/output alternate function
characteristics (NSS, SCK, MOSI, MISO).
frequency and VDDsupply voltage conditions.
f
1/
SCK
t
c(SCK)
f
1/
SCK
t
c(SCK)
t
r(SCK)
t
f(SCK)
su(NSS)
h(NSS)
t
w(SCKH)
t
w(SCKL)
t
su(MI)
t
su(SI)
t
h(MI)
t
h(SI)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
ParameterSymbol
frequency
1/ t
SCK
c(SCK)
fall time
time
time
time
Table 45: SPI characteristics
Conditions
(1)
Master modeSPI clock
SPI clock frequencyf
Capacitive load: C = 30 pFSPI clock rise and
Slave modeNSS setup timet
Master modeSCK high and low
0
4 x
t
MASTER
70Slave modeNSS hold timet
t
/
SCK
2 - 15
5Master modeData input setup
5Slave mode
7Master modeData input hold
10Slave mode
(2)
25
t
SCK
2 +15
UnitMaxMin
MHz80
MHz7
ns
/
81/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Electrical characteristics
UnitMaxMin
t
a(SO)
ParameterSymbol
(3) (4)
Conditions
Slave modeData output
access time
t
dis(SO)
(3) (5)
Slave modeData output
disable time
t
v(SO)
(3)
Data output valid
time
t
v(MO)
(3)
Data output valid
time
t
h(SO)
(3)
Data output hold
time
t
h(MO)
(3)
Data output hold
time
(1)
Parameters are given by selecting 10 MHz I/O output frequency.
(2)
Data characterization in progress.
(3)
Values based on design simulation and/or characterization results, and not tested in
Slave mode
(after enable edge)
Master mode
(after enable edge)
Slave mode
(after enable edge)
Master mode
(after enable edge)
(1)
25
27
11
(2)
(2)
3 x
t
MASTER
(2)
65
30
production.
(4)
Min time is for the minimum time to drive the output and the max time is for the maximum
time to validate the data.
(5)
Min time is for the minimum time to invalidate the output and the max time is for the
1. Measurement points are made at CMOS levels: 0.3 VDD and 0.7 VDD.
83/116DocID15590 Rev 8
ai14136b
SCK output
CPHA=0
MOSI
OUTUT
MISO
INPUT
CPHA=0
MSBIN
MSB OUT
BIT6 IN
LSB OUT
LSB IN
CPOL=0
CPOL=1
BIT1 OUT
NSSinput
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
r(SCK)
t
f(SCK)
t
h(MI)
High
SCK output
CPHA=1
CPHA=1
CPOL=0
CPOL=1
t
su(MI)
t
v(MO)
t
h(MO)
STM8S903K3 STM8S903F3Electrical characteristics
Figure 41: SPI timing diagram - master mode
(1)
1. Measurement points are made at CMOS levels: 0.3 VDD and 0.7 VDD.
w(SCLL)
w(SCLH)
su(SDA)
h(SDA)
t
r(SDA)
t
r(SCL)
t
f(SDA)
t
f(SCL)
h(STA)
su(STA)
I2C interface characteristics10.3.9
ParameterSymbol
SDA data hold timet
Table 46: I2C characteristics
Standard mode I2C
(2)
Min
(3)
DocID15590 Rev 884/116
Max
Fast mode I2C
(2)
Min
-0
Unit
(1)
Max
(2)
(2)
-1.3-4.7SCL clock low timet
μs
-0.6-4.0SCL clock high timet
-100-250SDA setup timet
(4)
0
900
300-1000-SDA and SCL rise time
(3)
ns
300-300-SDA and SCL fall time
-0.6-4.0START condition hold timet
μs
-0.6-4.7Repeated START condition setup timet
t
f(SDA)
t
r(SDA)
t
su(SDA)th(SDA)
t
f(SCL)
t
r(SCL)
t
w(SCLL)
t
w(SCLH)
t
h(STA)
t
su(STO)
t
su(STA)tw(STO:STA)
SDA
SCL
4.7kΩ
SDA
SCL
100Ω
100Ω
4.7kΩ
I2C bus
START
START
STOP
REPEATED
START
STM8S
V
DD
V
DD
ai17490
Electrical characteristicsSTM8S903K3 STM8S903F3
su(STO)
t
w(STO:STA)
ParameterSymbol
STOP to START condition time
Standard mode I2C
Min
(2)
Max
Fast mode I2C
(2)
Min
(2)
Max
(1)
(2)
-0.6-4.0STOP condition setup timet
(bus free)
b
(1)
f
MASTER
(2)
Data based on standard I2C protocol requirement, not tested in production
(3)
The maximum hold time of the start condition has only to be met if the interface does not stretch the
, must be at least 8 MHz to achieve max fast I2C speed (400kHz)
low time
(4)
The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge
the undefined region of the falling edge of SCL
Figure 42: Typical application with I2C bus and timing diagram
Unit
μs-1.3-4.7
pF400-400-Capacitive load for each bus lineC
1. Measurement points are made at CMOS levels: 0.3 x VDD and 0.7 x VDD.
10-bit ADC characteristics10.3.10
Subject to general operating conditions for VDD, f
MASTER
Table 47: ADC characteristics
ADC
, and TAunless otherwise specified.
UnitMaxTypMinConditionsParameterSymbol
MHz4-1VDD=2.95 to 5.5 VADC clock frequencyf
85/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Electrical characteristics
UnitMaxTypMinConditionsParameterSymbol
6-1VDD=4.5 to 5.5 V
V
AIN
Conversion voltage range
(1)
SS
-V
DD
VV
V
BGREF
V1.251.221.19VDD=2.95 to 5.5 VInternal bandgap reference
voltage
C
ADC
pF-3-Internal sample and hold
capacitor
(1)
S
STAB
t
CONV
ADC
ADC
ADC
= 4 MHzMinimum sampling timet
= 6 MHz
= 4 MHzMinimum total conversion
-0.5-f
-Wake-up time from standbyt
7
µs-0.75-f
µs-
µs3.5f
time (including sampling time,
1/f
µs2.33f
ADC
10-bit resolution)
(1)
During the sample time the input capacitance C
ADC
= 6 MHz
14
(3 pF max) can be charged/discharged
AIN
by the external source. The internal resistance of the analog source must allow the
capacitance to reach its final voltage level within tS.After the end of the sample time tS,
changes of the analog input voltage have no effect on the conversion result. Values for the
sample clock tSdepend on programming.
|ET|
Table 48: ADC accuracy with R
(2)
ADC
= 2 MHzTotal unadjusted error
< 10 kΩ , VDD= 5 V
AIN
(1)
TypConditionsParameterSymbol
UnitMax
LSB3.51.6f
|EO|
|EG|
|ED|
(2)
(2)
= 4 MHz
ADC
= 6 MHz
ADC
= 2 MHzOffset error
ADC
= 4 MHz
ADC
= 6 MHz
ADC
= 2 MHzGain error
ADC
= 4 MHz
ADC
= 6 MHz
ADC
(2)
DocID15590 Rev 886/116
ADC
ADC
= 2 MHzDifferential linearity error
= 4 MHz
42.2f
4.52.4f
2.51.1f
31.5f
31.8f
31.5f
32.1f
42.2f
1.50.7f
1.50.7f
Electrical characteristicsSTM8S903K3 STM8S903F3
(1)
TypConditionsParameterSymbol
UnitMax
= 6 MHz
ADC
|EL|
(1)
Data based on characterisation results, not tested in production.
(2)
ADC accuracy vs. negative injection current: Injecting negative current on any of the
(2)
ADC
ADC
ADC
= 2 MHzIntegral linearity error
= 4 MHz
= 6 MHz
1.50.7f
1.50.6f
20.8f
20.8f
analog input pins should be avoided as this significantly reduces the accuracy of the
conversion being performed on another analog input. It is recommended to add a Schottky
diode (pin to ground) to standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for I
INJ(PIN)
and ΣI
INJ(PIN)
in the I/O
port pin characteristics section does not affect the ADC accuracy.
Table 49: ADC accuracy with R
ADC
ADC
< 10 kΩ R
AIN
= 2 MHzTotal unadjusted error|ET|
= 4 MHz
, VDD= 3.3 V
AIN
TypConditionsParameterSymbol
(1)
UnitMax
LSB3.51.6f
41.9f
= 2 MHzOffset error|EO|
ADC
= 4 MHz
ADC
= 2 MHzGain error|EG|
ADC
= 4 MHz
ADC
= 2 MHzDifferential linearity error|ED|
ADC
= 4 MHz
ADC
= 2 MHzIntegral linearity error|EL|
ADC
= 4 MHz
ADC
(1)
Data based on characterisation results, not tested in production.
2.51f
2.51.5f
31.3f
32f
10.7f
1.50.7f
1.50.6f
20.8f
87/116DocID15590 Rev 8
STM8
10-bit A/D
conversion
R
AIN
C
AIN
V
AIN
AINx
V
DD
V
T
0.6 V
V
T
0.6 V
I
L
± 1 µA
C
ADC
STM8S903K3 STM8S903F3Electrical characteristics
Figure 43: ADC accuracy characteristics
1. Example of an actual transfer curve.
2. The ideal transfer curve
3. End point correlation line
ET= Total unadjusted error: maximum deviation between the actual and the ideal transfer
curves.
EO= Offset error: deviation between the first actual transition and the first ideal one.
EG= Gain error: deviation between the last ideal transition and the last actual one.
ED= Differential linearity error: maximum deviation between actual steps and the ideal
one.
EL= Integral linearity error: maximum deviation between any actual transition and the end
point correlation line.
Figure 44: Typical application with ADC
DocID15590 Rev 888/116
Electrical characteristicsSTM8S903K3 STM8S903F3
EMC characteristics10.3.11
Susceptibility tests are performed on a sample basis during product characterization.
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
•
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to VDDand V
•
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
SS
Designing hardened software to avoid noise problems10.3.11.2
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Table 50: EMS data
Level/
class
2/B
4/A
(1)
(1)
V
V
FESD
EFTB
Voltage limits to be
applied on any I/O pin to
induce a functional
disturbance
Fast transient voltage
burst limits to be applied
through 100 pF on V
and VSSpins to induce a
functional disturbance
DD
ConditionsParameterSymbol
VDD= 3.3 V, TA= 25 °C, f
(HSI clock), conforming to IEC 61000-4-2
VDD= 3.3 V, TA= 25 °C ,f
(HSI clock),conforming to IEC 61000-4-4
MASTER
MASTER
= 16 MHz
= 16 MHz
89/116DocID15590 Rev 8
STM8S903K3 STM8S903F3Electrical characteristics
(1)
Data obtained with HSI clock configuration, after applying HW recommendations described
in AN2860 (EMC guidelines for STM8S microcontrollers).
Electromagnetic interference (EMI)10.3.11.3
Based on a simple application running on the product (toggling 2 LEDs through the I/O ports),
the product is monitored in terms of emission. This emission test is in line with the norm SAE
IEC 61967-2 which specifies the board and the loading of each pin.
Table 51: EMI data
Conditions
ParameterSymbol
General
conditions
Monitored
frequency band
Max f
16 MHz/
8 MHz
Peak level
VDD= 5 V
TA= 25 °C
0.1 MHz to
30 MHz
LQFP32
package
Conforming to
S
EMI
SAE IEC
30 MHz to
130 MHz
61967-2
130 MHz to
1 GHz
SAE EMI
level
(1)
Data based on characterisation results, not tested in production.
SAE EMI level
HSE/fCPU
16 MHz/
16 MHz
(1)
Unit
55
54
dBμV
55
2.52.5
Absolute maximum ratings (electrical sensitivity)10.3.11.4
Based on three different tests (ESD, DLU and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)10.3.11.5
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied
to the pins of each sample according to each pin combination. The sample size depends on
the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated:
DocID15590 Rev 890/116
Electrical characteristicsSTM8S903K3 STM8S903F3
Human body model. This test conforms to the JESD22-A114A/A115A standard. For more
details, refer to the application note AN1181.
Table 52: ESD absolute maximum ratings
(1)
UnitMaximum
V
V
ESD(HBM)
(Human body model)
V
ESD(CDM)
(1)
Data based on characterization results, not tested in production
TA= 25°C, conforming toElectrostatic discharge
JESD22-A114voltage
TALQFP32 package =Electrostatic discharge
25°C, conforming tovoltage
SD22-C101(Charge device model)
ClassConditionsRatingsSymbol
value
4000A
1000IV
Static latch-up10.3.11.6
Two complementary static tests are required on six parts to assess the latch-up performance:
A supply overvoltage (applied to each power supply pin)
•
A current injection (applied to each input, output and configurable I/O pin) are performed
•
on each sample.
This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the
application note AN1181.
Table 53: Electrical sensitivities
(1)
ConditionsParameterSymbol
(1)
Class description: A Class is an STMicroelectronics internal specification. All its limits
are higher than the JEDEC specifications, that means when a device belongs to class A it
exceeds the JEDEC standard. B class strictly covers all the JEDEC criteria (international
standard).
Class
ATA= 25 °CStatic latch-up classLU
ATA= 85 °C
ATA= 125 °C
91/116DocID15590 Rev 8
5V_ME
L
A1K
L1
c
A
A2
ccc
C
D
D1
D3
E3
E1 E
16
17
24
25
b
32
1
Pin 1
identification
8
9
STM8S903K3 STM8S903F3Package information
Package information11
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK®packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.