Figure 52. STM8S105xx access line ordering information scheme .....................................................113
7/124DocID14771 Rev 12
STM8S105xxIntroduction
Introduction1
This datasheet contains the description of the device features, pinout, electrical characteristics,
mechanical data and ordering information.
For complete information on the STM8S microcontroller memory, registers and peripherals,
•
please refer to the STM8S microcontroller family reference manual (RM0016).
For information on programming, erasing and protection of the internal Flash memory
•
please refer to the STM8S Flash programming manual (PM0051).
For information on the debug and SWIM (single wire interface module) refer to the STM8
•
SWIM communication protocol and debug module user manual (UM0470).
For information on the STM8 core, please refer to the STM8 CPU programming manual
•
(PM0044).
DocID14771 Rev 128/124
DescriptionSTM8S105xx
Description2
The STM8S105xx access line 8-bit microcontrollers offer from 16 to 32 Kbytes Flash program
memory, plus integrated true data EEPROM. They are referred to as medium-density devices
in the STM8S microcontroller family reference manual (RM0016).
All devices of the STM8S105xx access line provide the following benefits: reduced system
cost, performance and robustness, short development cycles, and product longevity.
The system cost is reduced thanks to an integrated true data EEPROM for up to 300
kwrite/erase cycles and a high system integration level with internal clock oscillators, watchdog,
and brown-out reset.
Device performance is ensured by a 16 MHz CPU clock frequency and enhanced
characteristics which include robust I/O, independent watchdogs (with a separate clock
source), and a clock security system.
Short development cycles are guaranteed due to application scalability across a common
family product architecture with compatible pinout, memory map and and modular peripherals.
Full documentation is offered with a wide choice of development tools.
Product longevity is ensured in the STM8S family thanks to their advanced core which is
made in a state-of-the art technology for applications with 2.95 V to 5.5 V operating supply.
Advanced control timer (TIM1), General-purpose timers (TIM2 and TIM3), Basic timer (TIM4) SPI, I2C, UART,
Window WDG, Independent WDG, ADC
9/124DocID14771 Rev 12
XTAL 1-16 MHz
RC int. 16 MHz
RC int. 128 kHz
STM8 core
Debug/SWIM
I2C
SPI
UART2
16-bit general purpose
AWU timer
Reset block
Reset
POR
BOR
Clock controller
Detector
Clock to peripherals and core
8 Mbit/s
Address and data bus
Window WDG
Independent WDG
Up to 32 Kbytes
1 Kbytes
Up to 2 Kbytes
Boot ROM
ADC1
Reset
400 Kbit/s
Single wire
debug interf.
program Flash
16-bit advanced control
timer (TIM1)
timers (TIM2, TIM3)
8-bit basic timer
(TIM4)
data EEPROM
RAM
Master/slave
autosynchro
LIN master
SPI emul.
Beeper
1/2/4 kHz
beep
5 CAPCOM
channels
Up to
4 CAPCOM
channels +3
Up to
complementary
outputs
STM8S105xxBlock diagram
Block diagram3
Figure 1: STM8S105xx access line block diagram
DocID14771 Rev 1210/124
Product overviewSTM8S105xx
Product overview4
The following section intends to give an overview of the basic features of the device functional
modules and peripherals.
For more detailed information please refer to the corresponding family reference manual
(RM0016).
Central processing unit STM84.1
The 8-bit STM8 core is designed for code efficiency and performance.
It contains 6 internal registers which are directly addressable in each execution context, 20
addressing modes including indexed indirect and relative addressing and 80 instructions.
Architecture and registers
Harvard architecture
•
3-stage pipeline
•
32-bit wide program memory bus - single cycle fetching for most instructions
•
X and Y 16-bit index registers - enabling indexed addressing modes with or without offset
•
and read-modify-write type data manipulations
8-bit accumulator
•
24-bit program counter - 16-Mbyte linear memory space
•
16-bit stack pointer - access to a 64 K-level stack
•
8-bit condition code register - 7 condition flags for the result of the last instruction
•
Addressing
20 addressing modes
•
Indexed indirect addressing mode for look-up tables located anywhere in the address
•
space
Stack pointer relative addressing mode for local variables and parameter passing
•
Instruction set
80 instructions with 2-byte average instruction size
•
Standard data movement and logic/arithmetic functions
•
8-bit by 8-bit multiplication
•
16-bit by 8-bit and 16-bit by 16-bit division
•
Bit manipulation
•
Data transfer between stack and accumulator (push/pop) with direct stack access
•
Data transfer using the X and Y registers or direct memory-to-memory transfers
•
Single wire interface module (SWIM) and debug module (DM)4.2
The single wire interface module and debug module permits non-intrusive, real-time in-circuit
debugging and fast memory programming.
11/124DocID14771 Rev 12
STM8S105xxProduct overview
SWIM
Single wire interface module for direct access to the debug module and memory programming.
The interface can be activated in all device operation modes. The maximum data transmission
speed is 145 bytes/ms.
Debug module
The non-intrusive debugging module features a performance close to a full-featured emulator.
Beside memory and peripherals, also CPU operation can be monitored in real-time by means
of shadow registers.
R/W to RAM and peripheral registers in real-time
•
R/W access to all resources by stalling the CPU
•
Breakpoints on all program-memory instructions (software breakpoints)
•
Two advanced breakpoints, 23 predefined configurations
•
Interrupt controller4.3
Nested interrupts with three software priority levels
•
32 interrupt vectors with hardware priority
•
Up to 37 external interrupts on 6 vectors including TLI
•
Trap and reset interrupts
•
Flash program and data EEPROM memory4.4
Up to 32 Kbytes of Flash program single voltage Flash memory
•
Up to 1 Kbytes true data EEPROM
•
Read while write: Writing in data memory possible while executing code in program memory
•
User option byte area
•
Write protection (WP)
Write protection of Flash program memory and data EEPROM is provided to avoid unintentional
overwriting of memory that could result from a user software malfunction.
There are two levels of write protection. The first level is known as MASS (memory access
security system). MASS is always enabled and protects the main Flash program memory,
data EEPROM and option bytes.
To perform in-application programming (IAP), this write protection can be removed by writing
a MASS key sequence in a control register. This allows the application to write to data
EEPROM, modify the contents of main program memory or the device option bytes.
A second level of write protection, can be enabled to further protect a specific area of memory
known as UBC (user boot code). Refer to the figure below.
The size of the UBC is programmable through the UBC option byte, in increments of 1 page
(512 bytes) by programming the UBC option byte in ICP mode.
This divides the program memory into two areas:
Main program memory: Up to 32 Kbytes minus UBC
•
User-specific boot code (UBC): Configurable up to 32 Kbytes
•
DocID14771 Rev 1212/124
Programmable area
Data
Program memory area
Data memory area ( 1 Kbyte)
EEPROM
UBC area
Remains write protected during IAP
memory
Write access possible for IAP
(1 page steps)
Option bytes
(2 first pages) up to
Medium density
Flash program memory
(up to 32 Kbytes)
from 1 Kbyte
32 Kbytes
Product overviewSTM8S105xx
The UBC area remains write-protected during in-application programming. This means that
the MASS keys do not unlock the UBC area. It protects the memory used to store the boot
program, specific code libraries, reset and interrupt vectors, the reset routine and usually the
IAP and communication routines.
Figure 2: Flash memory organisation
Read-out protection (ROP)
The read-out protection blocks reading and writing the Flash program memory and data
EEPROM memory in ICP mode (and debug mode). Once the read-out protection is activated,
any attempt to toggle its status triggers a global erase of the program and data memory. Even
if no protection can be considered as totally unbreakable, the feature provides a very high
level of protection for a general purpose microcontroller.
Clock controller4.5
The clock controller distributes the system clock (f
to the core and the peripherals. It also manages clock gating for low power modes and ensures
clock robustness.
Features
Clock prescaler: To get the best compromise between speed and current consumption
•
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler.
Safe clock switching: Clock sources can be changed safely on the fly in run mode
•
through a configuration register. The clock signal is not switched until the new clock source
is ready. The design guarantees glitch-free switching.
Clock management: To reduce power consumption, the clock controller can stop the
•
clock to the core, individual peripherals or memory.
Master clock sources: Four different clock sources can be used to drive the master
•
clock:
1-16 MHz high-speed external crystal (HSE)
-
Up to 16 MHz high-speed user-external clock (HSE user-ext)
-
MASTER
) coming from different oscillators
13/124DocID14771 Rev 12
STM8S105xxProduct overview
16 MHz high-speed internal RC oscillator (HSI)
-
128 kHz low-speed internal RC (LSI)
-
Startup clock: After reset, the microcontroller restarts by default with an internal 2 MHz
•
clock (HSI/8). The prescaler ratio and clock source can be changed by the application
program as soon as the code execution starts.
Clock security system (CSS): This feature can be enabled by software. If an HSE clock
•
failure occurs, the internal RC (16 MHz/8) is automatically selected by the CSS and an
interrupt can optionally be generated.
Configurable main clock output (CCO): This outputs an external clock for use by the
•
application.
Table 3: Peripheral clock gating bit assignments in CLK_PCKENR1/2 registers
For efficent power management, the application can be put in one of four different low-power
modes. You can configure each mode to obtain the best compromise between lowest power
consumption, fastest start-up time and available wakeup sources.
Wait mode: In this mode, the CPU is stopped, but peripherals are kept running. The
•
wakeup is performed by an internal or external interrupt or reset.
Active halt mode with regulator on: In this mode, the CPU and peripheral clocks are
•
stopped. An internal wakeup is generated at programmable intervals by the auto wake up
unit (AWU). The main voltage regulator is kept powered on, so current consumption is
higher than in active halt mode with regulator off, but the wakeup time is faster. Wakeup
is triggered by the internal AWU interrupt, external interrupt or reset.
Active halt mode with regulator off: This mode is the same as active halt with regulator
•
on, except that the main voltage regulator is powered off, so the wake up time is slower.
Halt mode: In this mode the microcontroller uses the least power. The CPU and peripheral
•
clocks are stopped, the main voltage regulator is powered off. Wakeup is triggered by
external event or reset.
DocID14771 Rev 1214/124
Product overviewSTM8S105xx
Watchdog timers4.7
The watchdog system is based on two independent timers providing maximum security to
the applications.
Activation of the watchdog timers is controlled by option bytes or by software. Once activated,
the watchdogs cannot be disabled by the user program without performing a reset.
Window watchdog timer
The window watchdog is used to detect the occurrence of a software fault, usually generated
by external interferences or by unexpected logical conditions, which cause the application
program to abandon its normal sequence.
The window function can be used to trim the watchdog behavior to match the application
perfectly.
The application software must refresh the counter before time-out and during a limited time
window.
A reset is generated in two situations:
1. Timeout: At 16 MHz CPU clock the time-out period can be adjusted between 75 µs up to
64 ms.
2. Refresh out of window: The downcounter is refreshed before its value is lower than the
one stored in the window register.
Independent watchdog timer
The independent watchdog peripheral can be used to resolve processor malfunctions due to
hardware or software failures.
It is clocked by the 128 kHZ LSI internal RC clock source, and thus stays active even in case
of a CPU clock failure
The IWDG time base spans from 60 µs to 1 s.
Auto wakeup counter4.8
Used for auto wakeup from active halt mode
•
Clock source: Internal 128 kHz internal low frequency RC oscillator or external clock
•
LSI clock can be internally connected to TIM3 input capture channel 1 for calibration
•
Beeper4.9
The beeper function outputs a signal on the BEEP pin for sound generation. The signal is in
the range of 1, 2 or 4 kHz.
The beeper output port is only available through the alternate function remap option bit AFR7.
15/124DocID14771 Rev 12
STM8S105xxProduct overview
TIM1 - 16-bit advanced control timer4.10
This is a high-end timer designed for a wide range of control applications. With its
complementary outputs, dead-time control and center-aligned PWM capability, the field of
applications is extended to motor control, lighting and half-bridge driver
16-bit up, down and up/down autoreload counter with 16-bit prescaler
•
Four independent capture/compare channels (CAPCOM) configurable as input capture,
•
output compare, PWM generation (edge and center aligned mode) and single pulse mode
output
Synchronization module to control the timer with external signals
•
Break input to force the timer outputs into a defined state
•
Three complementary outputs with adjustable dead time
•
Encoder mode
•
Interrupt sources: 3 x input capture/output compare, 1 x overflow/update, 1 x break
•
TIM2, TIM3 - 16-bit general purpose timers4.11
16-bit autoreload (AR) up-counter
•
15-bit prescaler adjustable to fixed power of 2 ratios 1…32768
•
Timers with 3 or 2 individually configurable capture/compare channels
•
PWM mode
•
Interrupt sources: 2 or 3 x input capture/output compare, 1 x overflow/update
•
Timer
size
(bits)
16TIM1
16TIM2
16TIM3
TIM4 - 8-bit basic timer4.12
8-bit autoreload, adjustable prescaler ratio to any power of 2 from 1 to 128
•
Clock source: CPU clock
•
Interrupt source: 1 x overflow/update
•
Table 4: TIM timer features
PrescalerCounter
Any integer from 1 to
65536
1 to 32768
1 to 32768
Counting
mode
down
CAPCOM
channels
Complem.
outputs
Ext.
trigger
No03UpAny power of 2 from
No02UpAny power of 2 from
Timer
synchronization/
chaining
NoYes34Up/
DocID14771 Rev 1216/124
Product overviewSTM8S105xx
Timer
Timer
synchronization/
chaining
size
(bits)
8TIM4
PrescalerCounter
1 to 128
Counting
mode
CAPCOM
channels
Complem.
outputs
Ext.
trigger
No00UpAny power of 2 from
Analog-to-digital converter (ADC1)4.13
The STM8S105xx products contain a 10-bit successive approximation A/D converter (ADC1)
with up to 10 multiplexed input channels and the following main features:
Input voltage range: 0 to V
•
Conversion time: 14 clock cycles
•
Single and continuous and buffered continuous conversion modes
•
Buffer size (n x 10 bits) where n = number of input channels
•
Scan mode for single and continuous conversion of a sequence of channels
•
Analog watchdog capability with programmable upper and lower thresholds
•
Analog watchdog interrupt
•
External trigger input
•
Trigger from TIM1 TRGO
•
End of conversion (EOC) interrupt
•
DDA
Note: Additional AIN12 analog input is not selectable in ADC scan mode or with analog
watchdog. Values converted from AIN12 are stored only into the ADC_DRH/ADC_DRL
registers.
Communication interfaces4.14
The following communication interfaces are implemented:
2. [ ] alternate function remapping option (If the same alternate function is shown twice, it
indicates an exclusive choice not a duplication of the function).
23/124DocID14771 Rev 12
8
1
2
3
4
5
6
7
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
ADC_ETR/TIM2_CH2/(HS) PD3
[BEEP] TIM2_CH1/(HS) PD4
UART2_TX/PD5
UART2_RX/PD6
[TIM1_CH4] TLI/PD7
NRST
OSCIN/PA1
OSCOUT/PA2
VSS
VCAP
VDD
AIN12/PF4
[I2C_SDA] AIN5/PB5PB4/AIN4[ I2C_SCL]
PB3/AIN3 [TIM1_ETR]
PB2/AIN2 [TIM1_CH3N]
PB1/AIN1 [TIM1_CH2N]
PB0/AIN0 [TIM1_CH1N]
PE5/SPI_NSS
PC1 (HS)/TIM1_CH1/UART2_CK
PC2 (HS)/TIM1_CH2
PC3 (HS)/TIM1_CH3
PC4 (HS)/TIM1_CH4
PC5 (HS)/SPI_SCK
PC6 (HS)/SPI_MOSI
PC7 (HS)/SPI_MISO
PD0 (HS)/TIM3_CH2 [TIM1_BKIN][CLK_CCO]
PD1 (HS)/SWIM
PD2 (HS)/TIM3_CH1 [TIM2_CH3]
105_ai15057
VDDIO
VDDA
VSSA
STM8S105xxPinout and pin description
Figure 6: SDIP 32-pin pinout
1. (HS) high sink capability.
2. (T) True open drain (P-buffer and protection diode to VDDnot implemented).
3. [ ] alternate function remapping option (If the same alternate function is shown twice, it
indicates an exclusive choice not a duplication of the function).
LQFP44LQFP48
UFQFPN32
Table 6: Pin description for STM8S105 microcontrollers
PPODSpeedHigh
Main function
(after reset)
ResetXI/ONRST6111
I/O groundSV
Digital groundSV
1.8 V regulator capacitorSVCAP10566
Digital power supplySV
I/O power supplySV
7222
OSC IN
8333
OSC
OUT
--44
SSIO_1
9455
SS
11677
DD
12788
DDIO_1
OutputInputTypePin namePin number
Ext.
wpufloatingSDIP32LQFP32/
interrupt
sink
DocID14771 Rev 1224/124
Default alternate
function
Resonator/Port A1XXO1XXI/OPA1/
crystal in
Resonator/Port A2XXO1XXXI/OPA2/
crystal out
Alternate
function after
remap
[option bit]
Pinout and pin descriptionSTM8S105xx
Default alternate
function
Timer 2 -
channel 3
Analog input 12
(2)
Analog input 7Port B7XXO1XXXI/OPB7/
Analog input 6Port B6XXO1XXXI/OPB6/
PPODSpeedHigh
Main function
(after reset)
Port A3XXO1XXXI/OPA3/
Port A4XXO3HSXXXI/OPA4--910
Port A5XXO3HSXXXI/OPA5--1011
Port A6XXO3HSXXXI/OPA6--1112
Port F4XXO1XXI/OPF4/
Analog power supplySV
Analog groundSV
OutputInputTypePin namePin number
Ext.
LQFP44LQFP48
UFQFPN32
---9
TIM2
_CH3
[TIM3
_CH1]
138--
AIN12
(1)
1491213
DDA
15101314
SSA
--1415
AIN7
--1516
AIN6
wpufloatingSDIP32LQFP32/
interrupt
sink
Alternate
function after
remap
[option bit]
TIM3_ CH1
[AFR1]
16111617
AIN5
[I2C_
SDA]
17121718
AIN4
[I2C_
SCL]
18131819
AIN3
[TIM1_
ETR]
19141920
AIN2
[TIM1_
CH3N]
20152021
AIN1
[TIM1_
CH2N]
21162122
AIN0
[TIM1_
CH1N]
---23
AIN8
Analog input 5Port B5XXO1XXXI/OPB5/
Analog input 4Port B4XXO1XXXI/OPB4/
Analog input 3Port B3XXO1XXXI/OPB3/
Analog input 2Port B2XXO1XXXI/OPB2/
Analog input 1Port B1XXO1XXXI/OPB1/
Analog input 0Port B0XXO1XXXI/OPB0/
Analog input 8Port E7XXO1XXXI/OPE7/
I2C_SDA
[AFR6]
I2C_SCL
[AFR6]
TIM1_ ETR
[AFR5]
TIM1_ CH3N
[AFR5]
TIM1_ CH2N
[AFR5]
TIM1_ CH1N
[AFR5]
25/124DocID14771 Rev 12
STM8S105xxPinout and pin description
(3)
Alternate
function after
remap
[option bit]
Default alternate
function
Analog input 9
SPI master/slave
select
Timer 1 -Port C1XXO3HSXXXI/OPC1/
channel 1/ UART2
synchronous clock
Timer 1-Port C2XXO3HSXXXI/OPC2/
channel 2
Timer 1 -Port C3XXO3HSXXXI/OPC3/
channel 3
Timer 1 -Port C4XXO3HSXXXI/OPC4/
channel 4
SPI clockPort C5XXO3HSXXXI/OPC5/
PPODSpeedHigh
Main function
(after reset)
Port E6XXO1XXXI/OPE6/
Port E5XXO1XXXI/OPE5/SPI_
OutputInputTypePin namePin number
Ext.
LQFP44LQFP48
UFQFPN32
--2224
AIN9
22172325
NSS
23182426
TIM1_
CH1/
UART2_CK
24192527
TIM1_
CH2
25202628
TIM1_
CH3
2621-29
TIM1_
CH4
27222730
SPI_
SCK
wpufloatingSDIP32LQFP32/
interrupt
sink
--2831
SSIO_2
--2932
DDIO_2
28233033
SPI_
MOSI
29243134
SPI_
MISO
---37
TIM1_
BKIN
(4)
--3438
I2C_
SDA
--3539
I2C_
SCL
--3640
CLK_
CCO
O1XXI/OPE2/
T
(4)
O1XXI/OPE1/
T
I/O groundSV
I/O power supplySV
Port C6XXO3HSXXXI/OPC6/
Port C7XXO3HSXXXI/OPC7/
Port G0XXO1XXI/OPG0--3235
Port G1XXO1XXI/OPG1--3336
Port E3XXO1XXXI/OPE3/
Port E0XXO3HSXXXI/OPE0/
SPI master
out/slave in
SPI master in/
slave out
Timer 1 - break
input
I2C dataPort E2
I2C clockPort E1
Configurable clock
output
DocID14771 Rev 1226/124
Pinout and pin descriptionSTM8S105xx
Default alternate
function
Timer 3 -
channel 2
SWIM data
interface
Timer 3 -
channel 1
Timer 2 -
channel 2
Timer 2 -
channel 1
PPODSpeedHigh
Main function
(after reset)
Port D0XXO3HSXXXI/OPD0/
Port D1XXO4HSXXXI/OPD1/
Port D2XXO3HSXXXI/OPD2/
Port D3XXO3HSXXXI/OPD3/
Port D4XXO3HSXXXI/OPD4/
OutputInputTypePin namePin number
Ext.
LQFP44LQFP48
UFQFPN32
30253741
TIM3_
CH2
[TIM1_
BKIN]
[CLK_
CCO]
31263842
32273943
1284044
2294145
SWIM
TIM3_
CH1
[TIM2_
CH3]
TIM2_
CH2
[ADC_
ETR]
TIM2_
CH1
[BEEP]
(5)
wpufloatingSDIP32LQFP32/
interrupt
sink
Alternate
function after
remap
[option bit]
TIM1_ BKIN
[AFR3]/
CLK_ CCO
[AFR2]
TIM2_CH3
[AFR1]
ADC_ ETR
[AFR0]
BEEP output
[AFR7]
3304246
UART2_
TX
4314347
UART2_
RX
5324448
[TIM1_
CH4]
(1)
A pull-up is applied to PF4 during the reset phase. This pin is input floating after reset release.
(2)
AIN12 is not selectable in ADC scan mode or with analog watchdog.
(3)
In 44-pin package, AIN9 cannot be used by ADC scan mode.
(4)
In the open-drain output column, ‘T’ defines a true open-drain I/O (P-buffer, weak pull-up and protection diode to VDDare not implemented).
(5)
The PD1 pin is in input pull-up during the reset phase and after internal reset release.
Port D5XXO1XXXI/OPD5/
Port D6XXO1XXXI/OPD6/
Alternate function remapping5.1.1
As shown in the rightmost column of the pin description table, some alternate functions can
be remapped at different I/O ports by programming one of eight AFR (alternate function
remap) option bits. When the remapping option is active, the default alternate function is no
longer available.
To use an alternate function, the corresponding peripheral must be enabled in the peripheral
registers.
UART2 data
transmit
UART2 data
receive
Top level interruptPort D7XXO1XXXI/OPD7/TLI
TIM1_ CH4
[AFR4]
27/124DocID14771 Rev 12
STM8S105xxPinout and pin description
Alternate function remapping does not effect GPIO capabilities of the I/O ports (see the GPIO
section of the family reference manual, RM0016).
DocID14771 Rev 1228/124
0x00 FFFF
Flash program memory
(16to 32 Kbytes)
0x00 8000
Reserved
0x01 0000
0x02 7FFF
0x00 0000
RAM
0x00 07FF
(2 Kbytes)
0x00 4000
0x00 43FF
1 Kbyte data EEPROM
Reserved
Reserved
0x00 4400
0x00 47FF
32 interrupt vectors
0x00 807F
GPIO and periph. reg.
0x00 5000
0x00 57FF
0x00 5800
0x00 7FFF
0x00 4900
0x00 4FFF
2 Kbytes boot ROM
0x00 6000
0x00 67FF
0x00 6800
0x00 7EFF
CPU/SWIM/debug/ITC
registers
0x00 7F00
0x00 5FFF
Reserved
Reserved
Reserved
Option bytes
0x00 4800
0x00 487F
512 bytes stack
Memory and register mapSTM8S105xx
Memory and register map6
Memory map6.1
Figure 7: Memory map
The following table lists the boundary addresses for each memory size. The top of the stack
is at the RAM end address in each case.
29/124DocID14771 Rev 12
STM8S105xxMemory and register map
Table 7: Flash, Data EEPROM and RAM boundary addresses
End addressStart addressSize (bytes)Memory area
0x00 FFFF0x00 800032KFlash program memory
0x00 BFFF0x00 800016K
0x00 07FF0x00 00002KRAM
0x00 43FF0x00 40001024Data EEPROM
Register map6.2
I/O port hardware register map6.2.1
Table 8: I/O port hardware register map
Register nameRegister labelBlockAddress
Reset
status
0x00Port A data output latch registerPA_ODRPort A0x00 5000
0xXXPort A input pin value registerPA_IDR0x00 5001
0x00Port A data direction registerPA_DDR0x00 5002
0x00Port A control register 1PA_CR10x00 5003
0x00Port A control register 2PA_CR20x00 5004
0x00Port B data output latch registerPB_ODRPort B0x00 5005
0xXXPort B input pin value registerPB_IDR0x00 5006
0x00Port B data direction registerPB_DDR0x00 5007
0x00Port B control register 1PB_CR10x00 5008
0x00Port B control register 2PB_CR20x00 5009
DocID14771 Rev 1230/124
Memory and register mapSTM8S105xx
Register nameRegister labelBlockAddress
Reset
status
0x00Port C data output latch registerPC_ODRPort C0x00 500A
0xXXPort C input pin value registerPC_IDR0x00 500B
0x00Port C data direction registerPC_DDR0x00 500C
0x00Port C control register 1PC_CR10x00 500D
0x00Port C control register 2PC_CR20x00 500E
0x00Port D data output latch registerPD_ODRPort D0x00 500F
0xXXPort D input pin value registerPD_IDR0x00 5010
0x00Port D data direction registerPD_DDR0x00 5011
0x02Port D control register 1PD_CR10x00 5012
0x00Port D control register 2PD_CR20x00 5013
0x00Port E data output latch registerPE_ODRPort E0x00 5014
0xXXPort E input pin value registerPE_IDR0x00 5015
0x00Port E data direction registerPE_DDR0x00 5016
0x00Port E control register 1PE_CR10x00 5017
0x00Port E control register 2PE_CR20x00 5018
0x00Port F data output latch registerPF_ODRPort F0x00 5019
0xXXPort F input pin value registerPF_IDR0x00 501A
0x00Port F data direction registerPF_DDR0x00 501B
0x00Port F control register 1PF_CR10x00 501C
31/124DocID14771 Rev 12
STM8S105xxMemory and register map
Register nameRegister labelBlockAddress
Reset
status
0x00Port F control register 2PF_CR20x00 501D
0x00Port G data output latch registerPG_ODRPort G0x00 501E
0xXXPort G input pin value registerPG_IDR0x00 501F
0x00Port G data direction registerPG_DDR0x00 5020
0x00Port G control register 1PG_CR10x00 5021
0x00Port G control register 2PG_CR20x00 5022
0x00Port H data output latch registerPH_ODRPort H0x00 5023
0xXXPort H input pin value registerPH_IDR0x00 5024
0x00Port H data direction registerPH_DDR0x00 5025
0x00Port H control register 1PH_CR10x00 5026
0x00Port H control register 2PH_CR20x00 5027
0x00Port I data output latch registerPI_ODRPort I0x00 5028
0xXXPort I input pin value registerPI_IDR0x00 5029
0x00DM debug module control register 1DM_CR10x00 7F96
0x00DM debug module control register 2DM_CR20x00 7F97
DM_CSR10x00 7F98
0x10DM debug module control/status
register 1
DM_CSR20x00 7F99
0x00DM debug module control/status
register 2
Reserved area (5 bytes)0x00 7F9B to
0x00 7F9F
(1)
Accessible by debug module only
0xFFDM enable function registerDM_ENFCTR0x00 7F9A
DocID14771 Rev 1246/124
Interrupt vector mappingSTM8S105xx
Interrupt vector mapping7
Table 11: Interrupt mapping
IRQ
no.
block
DescriptionSource
Port A external interruptsEXTI03
Wakeup
from halt
mode
(1)
Yes
Wakeup from
active-halt
mode
(1)
Vector
address
0x00 8000YesYesResetRESET
0x00 8004--Software interruptTRAP
0x00 8008--External top level interruptTLI0
0x00 800CYes-Auto wake up from haltAWU1
0x00 8010--Clock controllerCLK2
0x00 8014Yes
0x00 8018YesYesPort B external interruptsEXTI14
0x00 801CYesYesPort C external interruptsEXTI25
0x00 8020YesYesPort D external interruptsEXTI36
0x00 8024YesYesPort E external interruptsEXTI47
0x00 80288
0x00 802C--Reserved9
0x00 8030YesYesEnd of transferSPI10
TIM111
underflow/ trigger/ break
0x00 8034--TIM1 update/ overflow/
0x00 8038--TIM1 capture/ compareTIM112
0x00 803C--TIM update/ overflowTIM213
0x00 8040--TIM capture/ compareTIM214
47/124DocID14771 Rev 12
STM8S105xxInterrupt vector mapping
IRQ
no.
block
UART221
ADC122
DescriptionSource
FULL
analog watchdog interrupt
Wakeup
from halt
mode
Wakeup from
active-halt
mode
Vector
address
0x00 8044--Update/ overflowTIM315
0x00 8048--Capture/ compareTIM316
0x00 804C--Reserved17
0x00 8050--Reserved18
0x00 8054YesYesI2C interruptI2C19
0x00 8058--Tx completeUART220
0x00 805C--Receive register DATA
0x00 8060--ADC1 end of conversion/
Reserved
(1)
Except PA1
0x00 8064--TIM update/ overflowTIM423
0x00 8068--EOP/ WR_PG_DISFlash24
0x00 806C
to 0x00
807C
DocID14771 Rev 1248/124
Option bytesSTM8S105xx
Option bytes8
Option bytes contain configurations for device hardware features as well as the memory
protection of the device. They are stored in a dedicated block of the memory. Except for the
ROP (read-out protection) byte, each option byte has to be stored twice, in a regular form
(OPTx) and a complemented one (NOPTx) for redundancy.
Option bytes can be modified in ICP mode (via SWIM) by accessing the EEPROM address
shown in the table below.
Option bytes can also be modified ‘on the fly’ by the application in IAP mode, except the ROP
option that can only be modified in ICP mode (via SWIM).
Refer to the STM8S Flash programming manual (PM0051) and STM8 SWIM communication
protocol and debug module user manual (UM0470) for information on SWIM programming
procedures.
For STM8S products, this option is checked by the boot ROM code
after reset. Depending on the content of addresses 0x487E, 0x487F,
and 0x8000 (reset vector), the CPU jumps to the bootloader or to
the reset vector. Refer to the UM0560 (STM8L/S bootloader manual)
for more details.
For STM8L products, the bootloader option bytes are on addresses
0xXXXX and 0xXXXX+1 (2 bytes). These option bytes control
whether the bootloader is active or not. For more details, refer to the
UM0560 (STM8L/S bootloader manual) for more details.
Table 14: Description of alternate function remapping bits [7:0] of OPT2
Option byte no.
Description
(1)
AFR7 Alternate function remapping option 7OPT2
0: AFR7 remapping option inactive: Default alternate function
1: Port B3 alternate function = TIM1_ETR; port B2 alternate function
= TIM1_NCC3; port B1 alternate function = TIM1_CH2N; port B0
alternate function = TIM1_CH1N.
AFR4 Alternate function remapping option 4
0: AFR4 remapping option inactive: Default alternate function
(2)
.
1: Port D7 alternate function = TIM1_CH4.
AFR3 Alternate function remapping option 3
0: AFR3 remapping option inactive: Default alternate function
(2)
.
.
.
1: Port D0 alternate function = TIM1_BKIN.
AFR2 Alternate function remapping option 2
DocID14771 Rev 1252/124
Option bytesSTM8S105xx
Option byte no.
Description
(1)
0: AFR2 remapping option inactive: Default alternate function
1: Port D0 alternate function = CLK_CCO.Note: AFR2 option has
priority over AFR3 if both are activated.
1: Port A3 alternate function = TIM3_CH1; port D2 alternate function
TIM2_CH3.
AFR0 Alternate function remapping option 0
0: AFR0 remapping option inactive: Default alternate function
1: Port D3 alternate function = ADC_ETR.
(1)
Do not use more than one remapping option in the same port.
(2)
Refer to pinout description.
(2)
(2)
(2)
.
.
.
53/124DocID14771 Rev 12
STM8S105xxUnique ID
Unique ID9
The devices feature a 96-bit unique device identifier which provides a reference number that
is unique for any device and in any context. The 96 bits of the identifier can never be altered
by the user.
The unique device identifier can be read in single bytes and may then be concatenated using
a custom algorithm.
The unique device identifier is ideally suited:
For use as serial numbers
•
For use as security keys to increase the code security in the program memory while using
•
and combining this unique ID with software cryptograhic primitives and protocols before
programming the internal memory.
To activate secure boot processes
•
Table 15: Unique ID registers (96 bits)
Address
0x48CD
0x48CF
0x48D2
description
X co-ordinate
on the wafer
Y co-ordinate
on the wafer
Lot number
Unique ID bitsContent
01234567
U_ID[7:0]
U_ID[15:8]0x48CE
U_ID[23:16]
U_ID[31:24]0x48D0
U_ID[39:32]Wafer number0x48D1
U_ID[47:40]
U_ID[55:48]0x48D3
U_ID[63:56]0x48D4
U_ID[71:64]0x48D5
U_ID[79:72]0x48D6
U_ID[87:80]0x48D7
U_ID[95:88]0x48D8
DocID14771 Rev 1254/124
5 V or 3.3 V
A
V
V
V
V
V
V
DD
DDA
DDIO
SS
SSA
SSIO
Electrical characteristicsSTM8S105xx
Electrical characteristics10
Parameter conditions10.1
Unless otherwise specified, all voltages are referred to VSS.
Minimum and maximum values10.1.1
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100 % of the devices with an ambient temperature at TA= 25 °C and TA= T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on characterization,
the minimum and maximum values refer to sample tests and represent the mean value plus
or minus three times the standard deviation (mean ± 3 Σ).
Typical values10.1.2
Unless otherwise specified, typical data are based on TA= 25 °C, VDD= 5 V. They are given
only as design guidelines and are not tested.
Amax
(given by
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ± 2 Σ).
Typical curves10.1.3
Unless otherwise specified, all typical curves are given only as design guidelines and are not
tested.
Typical current consumption10.1.4
For typical current consumption measurements, VDD, V
in the configuration shown in the following figure.
Figure 8: Supply current measurement conditions
DDIO
and V
are connected together
DDA
55/124DocID14771 Rev 12
STM8 PIN
50 pF
STM8 PIN
V
IN
STM8S105xxElectrical characteristics
Loading capacitor10.1.5
The loading conditions used for pin parameter measurement are shown in the following figure.
Figure 9: Pin loading conditions
Pin input voltage10.1.6
The input voltage measurement on a pin of the device is described in the following figure.
Figure 10: Pin input voltage
Absolute maximum ratings10.2
Stresses above those listed as ‘absolute maximum ratings’ may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 16: Voltage characteristics
UnitMaxMinRatingsSymbol
(1)
V
- V
DDx
SS
V
IN
PE2)
(2)
DocID14771 Rev 1256/124
DDA andVDDIO
)
6.5VSS- 0.3Input voltage on true open drain pins (PE1,
V6.5-0.3Supply voltage (including V
Electrical characteristicsSTM8S105xx
UnitMaxMinRatingsSymbol
DDx
(2)
-
VDD+ 0.3VSS- 0.3Input voltage on any other pin
mV50Variations between different power pins|V
VDD|
SSx
ESD
- VSS|
Electrostatic discharge voltageV
see Absolute maximum
50Variations between all the different ground pins|V
ratings (electrical sensitivity)
(1)
All power (VDD, V
DDIO
, V
) and ground (VSS, V
DDA
SSIO
, V
) pins must always be
SSA
connected to the external power supply
(2)
I
INJ(PIN)
must never be exceeded. This is implicitly insured if VINmaximum is respected.
If VINmaximum cannot be respected, the injection current must be limited externally to the
I
INJ(PIN)
value. A positive injection is induced by VIN>VDDwhile a negative injection is induced
by VIN<VSS. For true open-drain pads, there is no positive injection current, and the
corresponding VINmaximum must always be respected
Table 17: Current characteristics
(1)
RatingsSymbol
UnitMax.
I
VDD
I
VSS
IO
ΣI
(2)
(2)
60Total current out of VSSground lines (sink)
mA60Total current into VDDpower lines (source)
20Output current sunk by any I/O and control pinI
20Output current source by any I/Os and control pin
IO
pins) for devices with two V
pins) for devices with one V
pins) for devices with two V
pins) for devices with one V
DDIO
DDIO
SSIO
SSIO
pins
pin
pins
pin
(3)
(3)
(3)
(3)
200Total output current sourced (sum of all I/O and control
100Total output current sourced (sum of all I/O and control
160Total output current sunk (sum of all I/O and control
80Total output current sunk (sum of all I/O and control
57/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
(1)
RatingsSymbol
UnitMax.
INJ(PIN)
(4) (5)
±4Injected current on NRST pinI
±4Injected current on OSCIN pin
(6)
ΣI
INJ(PIN)
(1)
(2)
(4)
Data based on characterization results, not tested in production.
All power (VDD, V
DDIO
, V
) and ground (VSS, V
DDA
SSIO
, V
SSA
) pins must always be
(6)
±4Injected current on any other pin
±20Total injected current (sum of all I/O and control pins)
connected to the external supply.
(3)
I/O pins used simultaneously for high current source/sink must be uniformly spaced
around the package between the V
(4)
I
INJ(PIN)
must never be exceeded. This is implicitly insured if VINmaximum is respected.
DDIO/VSSIO
pins.
If VINmaximum cannot be respected, the injection current must be limited externally to the
I
INJ(PIN)
value. A positive injection is induced by VIN>VDDwhile a negative injection is induced
by VIN<VSS. For true open-drain pads, there is no positive injection current, and the
corresponding VINmaximum must always be respected
(5)
Negative injection disturbs the analog performance of the device. See note in I2C interface
characteristics.
(6)
When several inputs are submitted to a current injection, the maximum ΣI
INJ(PIN)
is the
absolute sum of the positive and negative injected currents (instantaneous values). These
results are based on characterization with ΣI
INJ(PIN)
maximum current injection on four I/O
port pins of the device.
Table 18: Thermal characteristics
UnitValueRatingsSymbol
STG
J
150Maximum junction temperatureT
°C-65 to 150Storage temperature rangeT
Operating conditions10.3
The device must be used in operating conditions that respect the parameters in the table
below. In addition, full account must be taken of all physical capacitor characteristics and
tolerances.
DocID14771 Rev 1258/124
Table 19: General operating conditions
Electrical characteristicsSTM8S105xx
UnitMaxMinConditionsParameterSymbol
f
CPU
VDD/ V
VCAP
(3)
P
D
DD_IO
(1)
frequency
voltage
: capacitance of
EXT
external capacitor
ESR of external
capacitor
at 1 MHz
(2)
ESL of external
capacitor
Power dissipation at
TA = 85 °C for suffix
44 and 48-pin devices,
with output on eight
standard ports, two high6or TA= 125° C for
suffix 3sink ports and two open
drain ports
simultaneously
(4)
MHz160Internal CPU clock
V5.52.95Standard operating
nF3300470C
-
-
-
Ohm0.3
nH15
mW443
32-pin package, with
360
output on eight standard
ports and two high sink
ports simultaneously
T
A
Ambient temperature
for 6 suffix version
dissipation
Ambient temperature
for 3 suffix version
T
J
dissipation
(4)
°C85-40Maximum power
125-40Maximum power
105-406 suffix versionJunction temperature
range
130-403 suffix version
(1)
Care should be taken when selecting the capacitor, due to its tolerance, as well as the
parameter dependency on temperature, DC bias and frequency in addition to other factors.
The parameter maximum value must be respected for the full application range.
59/124DocID14771 Rev 12
16
12
8
4
0
2.95
4.0
5.0
5.5
f
CPU
(MHz)
Functionality guaranteed
@TA-40 to 125 °C
Supply voltage
Functionality
not
guaranteed
in this area
STM8S105xxElectrical characteristics
(2)
This frequency of 1 MHz as a condition for VCAP parameters is given by design of internal
regulator.
(3)
To calculate P
Dmax(TA
characteristics ) with the value for T
), use the formula P
given in the current table and the value for Θ
Jmax
Dmax
= (T
- TA)/ΘJA(see Thermal
Jmax
given in Thermal characteristics.
(4)
Refer to Thermal characteristics
JA
VDD
Figure 11: f
CPUmax
versus V
DD
Table 20: Operating conditions at power-up/power-down
VDDrise time ratet
VDDfall time rate
(1)
(1)
UnitMaxTypMinConditionsParameterSymbol
µs/V∞2.0
∞2.0
TEMP
V
IT+
VDDrisingReset releasedelayt
threshold
V
IT-
threshold
V
HYS(BOR)
hysteresis
(1)
Guaranteed by design, not tested in production.
DocID14771 Rev 1260/124
(1)
ms1.7
V2.952.82.65Power-on reset
2.882.72.58Brown-out reset
mV70Brown-out reset
ESR
R
Leak
ESL
C
Electrical characteristicsSTM8S105xx
VCAP external capacitor10.3.1
Stabilization for the main regulator is achieved connecting an external capacitor C
V
CAP
pin. C
is specified in the Operating conditions section. Care should be taken to limit
EXT
EXT
the series inductance to less than 15 nH.
Figure 12: External capacitor C
EXT
1. ESR is the equivalent series resistance and ESL is the equivalent inductance.
Supply current characteristics10.3.2
The current consumption is measured as described in Pin input voltage.
Total current consumption in run mode10.3.2.1
Table 21: Total current consumption with code execution in run mode at VDD= 5 V
to the
I
DD(RUN)
f
Supply
current in run
mode, code
= f
CPU
MASTER
= 16 MHz
(16 MHz)
executed
from RAM3.22.6HSE user ext. clock
(16 MHz)
(16 MHz)
f
= f
CPU
125 kHz
MASTER
/128 =
(16 MHz)
(16 MHz)
(1)
TypConditionsParameterSymbol
UnitMax
mA3.2HSE crystal osc.
3.22.5HSI RC osc.
2.21.6HSE user ext. clock
2.01.3HSI RC osc.
61/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
(1)
TypConditionsParameterSymbol
UnitMax
I
DD(RUN)
f
Supply
current in run
mode, code
= f
CPU
MASTER
15.625 kHz
f
= f
CPU
= 128 kHz
f
= f
CPU
= 16 MHz
/128 =
(16 MH3z/8)
MASTER
(128 kHz)
MASTER
(16 MHz)
executed
fromFlash8.07.0HSE user ext. clock
(16 MHz)
(16 MHz)
f
= f
CPU
= 2 MHz
f
CPU
125 kHz
MASTER
= f
MASTER
/128 =
(16 MHz/8)
(16 MHz)
(2)
0.75HSI RC osc.
0.55LSI RC osc.
7.7HSE crystal osc.
8.07.0HSI RC osc.
1.5HSI RC osc.
2.01.35HSI RC osc.
f
= f
CPU
MASTER
15.625 kHz
f
= f
CPU
= 128 kHz
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
/128 =
(16 MHz/8)
MASTER
(128 kHz)
0.75HSI RC osc.
0.6LSI RC osc.
Table 22: Total current consumption with code execution in run mode at VDD= 3.3 V
(1)
UnitMax
mA2.8HSE crystal osc.
I
DD(RUN)
current
in run
f
CPU
= f
MASTER
DocID14771 Rev 1262/124
TypConditionsParameterSymbol
= 16 MHzSupply
(16 MHz)
Electrical characteristicsSTM8S105xx
(1)
TypConditionsParameterSymbol
UnitMax
mode,
code
executed
from
RAM
current
in run
mode,
code
executed
from
Flash
f
= f
CPU
MASTER
= 125 kHz
= f
CPU
MASTER
15.625 kHz
f
= f
CPU
f
CPU
= f
MASTER
MASTER
/128
/128 =
= 128 kHz
= 16 MHzSupply
3.22.6HSE user ext. clock
(16 MHz)
3.22.5HSI RC osc.
(16 MHz)
2.21.6HSE user ext. clock
(16 MHz)
2.01.3HSI RC osc.
(16 MHz)
0.75HSI RC osc. (16 MHz/8)f
0.55LSI RC osc.
(128 kHz)
7.3HSE crystal osc.
(16 MHz)
8.07.0HSE user ext. clock
(16 MHz)
8.07.0HSI RC osc.
f
= f
CPU
f
CPU
= f
MASTER
MASTER
= 125 kHz
f
= f
CPU
MASTER
15.625 kHz
= 2 MHz
/128
/128 =
(16 MHz)
(16 MHz/8)
(16 MHz)
(16 MHz/8)
1.5HSI RC osc.
(2)
2.01.35HSI RC osc.
0.75HSI RC osc.
63/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
(1)
TypConditionsParameterSymbol
UnitMax
f
CPU
= f
MASTER
= 128 kHz
(128 kHz)
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
Total current consumption in wait mode10.3.2.2
Table 23: Total current consumption in wait mode at VDD= 5 V
f
I
DD(WFI)
Supply
current in
wait mode
CPU
MHz
= f
MASTER
= 16
(16 MHz)
(16 MHz)
0.6LSI RC osc.
(1)
TypConditionsParameterSymbol
UnitMax
mA2.15HSE crystal osc.
2.01.55HSE user ext. clock
1.91.5HSI RC osc.
(16 MHz)
f
= f
CPU
MASTER
= 125 kHz
f
= f
CPU
MASTER
= 15.625 kHz
f
= f
CPU
MASTER
kHz
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
/128
/128
= 128
(16 MHz)
(16 MHz/8)
(128 kHz)
(2)
1.3HSI RC osc.
0.7HSI RC osc.
0.5LSI RC osc.
DocID14771 Rev 1264/124
Electrical characteristicsSTM8S105xx
Table 24: Total current consumption in wait mode at VDD= 3.3 V
TypConditionsParameterSymbol
(1)
UnitMax
I
DD(WFI)
Supply
current in
wait mode
CPU
MHz
= f
MASTER
= 16
(16 MHz)
f
(16 MHz)
(16 MHz)
f
= f
CPU
MASTER
= 125 kHz
f
= f
CPU
MASTER
= 15.625 kHz
f
= f
CPU
MASTER
128 kHz
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
/128
/128
=
(16 MHz)
(16 MHz/8)
(128 kHz)
(2)
mA1.75HSE crystal osc.
2.01.55HSE user ext. clock
1.91.5HSI RC osc.
1.3HSI RC osc.
0.7HSI RC osc.
0.5LSI RC osc.
Total current consumption in active halt mode10.3.2.3
I
DD(AH)
Table 25: Total current consumption in active halt mode at VDD= 5 V
Max
at 85
(1)
°C
125
°C
Main
(3)
TypConditionsParameterSymbol
Clock sourceFlash mode
voltage
regulator
(2)
(MVR)
OnSupply
current in
active halt
mode
Operating
mode
osc.
(16 MHz)
400320200LSI RC osc.
UnitMax at
(1)
µA1080HSE crystal
65/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
Main
voltage
regulator
(2)
(MVR)
Off
Power-down
mode
Operating
mode
mode
(3)
Clock sourceFlash mode
(128 kHz)
osc.
(16 MHz)
(128 kHz)
(128 kHz)
TypConditionsParameterSymbol
Max
at 85
(1)
°C
125
°C
UnitMax at
(1)
1030HSE crystal
350270140LSI RC osc.
22012068LSI RC osc.
1506012Power-down
(1)
Data based on characterization results, not tested in production
(2)
Configured by the REGAH bit in the CLK_ICKR register.
(3)
Configured by the AHALT bit in the FLASH_CR1 register.
Table 26: Total current consumption in active halt mode at VDD= 3.3 V
Clock sourceFlash
osc.
(16 MHz)
I
DD(AH)
current in
active halt
mode
Main
voltage
regulator
(2)
(MVR)
OnSupply
(3)
mode
Operating
mode
(128 kHz)
Max
TypConditionsParameterSymbol
(1)
125
°C
at 85
°C
UnitMax at
(1)
µA680HSE crystal
400320200LSI RC osc.
DocID14771 Rev 1266/124
Electrical characteristicsSTM8S105xx
Main
voltage
regulator
(2)
(MVR)
mode
(3)
Clock sourceFlash
Power-down
mode
osc.
(16 MHz)
(128 kHz)
Off
Operating
mode
(128 kHz)
mode
(1)
Data based on characterization results, not tested in production.
(2)
Configured by the REGAH bit in the CLK_ICKR register.
(3)
Configured by the AHALT bit in the FLASH_CR1 register.
Max
TypConditionsParameterSymbol
(1)
125
°C
at 85
°C
UnitMax at
(1)
630HSE crystal
350270140LSI RC osc.
22012066LSI RC osc.
1506010Power-down
Total current consumption in halt mode10.3.2.4
Table 27: Total current consumption in halt mode at VDD= 5 V
I
DD(H)
(1)
Data based on characterization results, not tested in production.
Supply current
in halt mode
clock after wakeup
HSI clock after wakeup
TypConditionsParameterSymbol
Max at
85 °C
(1)
125
°C
UnitMax at
(1)
µA1509062Flash in operating mode, HSI
80256.5Flash in powerdown mode,
67/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
Table 28: Total current consumption in halt mode at VDD= 3.3 V
t
WU(WFI)
I
DD(H)
Supply current
in halt mode
clock after wakeup
HSI clock after wakeup
(1)
Data based on characterization results, not tested in production.
Low power mode wakeup times10.3.2.5
Table 29: Wakeup times
Wakeup time from
wait mode to run
(3)
0 to 16 MHz
= f
CPU
MASTER
= 16 MHzmode
TypConditionsParameterSymbol
Max at
85 °C
(1)
125
°C
UnitMax at
(1)
µA1509060Flash in operating mode, HSI
80204.5Flash in powerdown mode,
(1)
TypConditionsParameterSymbol
Max
See
note
Unit
(2)
0.56f
t
WU(AH)
t
WU(H)
Wakeup time active
halt mode to run
(3)
mode
Wakeup time active
halt mode to run
(3)
mode
Wakeup time active
halt mode to run
(3)
mode
Wakeup time active
halt mode to run
(3)
mode
Wakeup time from
halt mode to run
MVR voltage
regulator
(4)
on
MVR voltage
regulator
(4)
on
MVR voltage
regulator
(4)
off
MVR voltage
regulator
(4)
off
Flash in operating
(5)
mode
Flash in
power-down
(5)
Flash in operating
(5)
mode
Flash in
power-down
(5)
(5)
(5)
HSI
(after
wakeup)
HSI
(after
wakeup)mode
HSI
(after
wakeup)
HSI
(after
wakeup)mode
1
3
48
50
52Flash in operating mode
54Flash in power-down mode
(6)
(6)
(6)
(6)
(6)
2
μs
DocID14771 Rev 1268/124
(3)
mode
(1)
Data guaranteed by design, not tested in production.
(2)
t
WU(WFI)
(3)
Measured from interrupt event to interrupt vector fetch.
(4)
Configured by the REGAH bit in the CLK_ICKR register.
(5)
Configured by the AHALT bit in the FLASH_CR1 register.
(6)
Plus 1 LSI clock depending on synchronization.
= 2 x 1/f
master
+ 7 x 1/f
CPU.
Total current consumption and timing in forced reset state10.3.2.6
Table 30: Total current consumption and timing in forced reset state
Electrical characteristicsSTM8S105xx
(1)
(1)
Unit
UnitMax
TypConditionsParameterSymbol
Max
TypConditionsParameterSymbol
I
DD(R)
t
RESETBL
(2)
state
Reset pin release to
vector fetch
(1)
Data guaranteed by design, not tested in production.
(2)
Characterized with all I/Os tied to VSS.
Current consumption of on-chip peripherals10.3.2.7
Subject to general operating conditions for VDDand TA.
HSI internal RC/f
I
DD(TIM1)
I
DD(TIM2)
CPU
= f
MASTER
= 16 MHz.
Table 31: Peripheral current consumption
(1)
(1)
500VDD= 5 VSupply current in reset
μA
400VDD= 3.3 V
μs150
UnitTyp.ParameterSymbol
230TIM1 supply current
µA
115TIM2 supply current
69/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
UnitTyp.ParameterSymbol
I
DD(TIM3)
I
DD(TIM4)
I
DD(UART2)
I
DD(SPI)
I
DD(I2C)
I
DD(ADC1)
(1)
Data based on a differential IDDmeasurement between reset configuration and timer
(2)
(2)
(1)
(1)
(2)
(3)
90TIM3 timer supply current
30TIM4 timer supply current
110UART2 supply current
45SPI supply current
65I2C supply current
955ADC1 supply current when converting
counter running at 16 MHz. No IC/OC programmed (no I/O pads toggling). Not tested in
production.
(2)
Data based on a differential IDDmeasurement between the on-chip peripheral when kept
under reset and not clocked and the on-chip peripheral when clocked and not kept under
reset. No I/O pads toggling. Not tested in production.
(3)
Data based on a differential IDDmeasurement between reset configuration and continuous
A/D conversions. Not tested in production.
Current consumption curves10.3.2.8
The following figures show typical current consumption measured with code executing in
RAM.
Figure 13: Typ. I
DD(RUN)
DocID14771 Rev 1270/124
vs. V
HSE user external clock, f
DD ,
CPU
= 16 MHz
Electrical characteristicsSTM8S105xx
Figure 14: Typ. I
Figure 15: Typ. I
DD(RUN)
DD(RUN)
vs. f
HSE user external clock, VDD= 5 V
CPU ,
vs. V
HSI RC osc, f
DD ,
CPU
= 16 MHz
71/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
Figure 16: Typ. I
Figure 17: Typ. I
DD(WFI)
DD(WFI)
vs. V
vs. f
HSE user external clock, f
DD ,
, HSE user external clock VDD= 5 V
CPU
CPU
= 16 MHz
DocID14771 Rev 1272/124
Electrical characteristicsSTM8S105xx
Figure 18: Typ. I
DD(WFI)
vs. VDD, HSI RC osc, f
External clock sources and timing characteristics10.3.3
HSE user external clock
Subject to general operating conditions for VDDand TA.
CPU
= 16 MHz
Table 32: HSE user external clock characteristics
f
HSE_ext
User external clock source
frequency
V
HSEH
(1)
OSCIN input pin high level
voltage
V
HSEL
(1)
OSCIN input pin low level
voltage
LEAK_HSE
(1)
Data based on characterization results, not tested in production.
OSCIN input leakage currentI
VSS< VIN< V
DD
UnitMaxMinConditionsParameterSymbol
MHz160
DD
VDD+ 0.3 V0.7 x V
V
V
SS
0.3 x V
DD
μA+1-1
73/124DocID14771 Rev 12
V
HSEH
V
HSEL
External clock
source
OSCIN
f
HSE
STM8
STM8S105xxElectrical characteristics
Figure 19: HSE external clocksource
HSE crystal/ceramic resonator oscillator
The HSE clock can be supplied with a 1 to 16 MHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and start-up stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
f
HSE
F
(1)
C
I
DD(HSE)
g
m
SU(HSE)
External high speed
oscillator frequency
Feedback resistorR
Recommended load
capacitance
HSE oscillator power
consumption
Oscillator
transconductance
(4)
Table 33: HSE oscillator characteristics
(2)
C = 20 pF,
f
= 16 MHz
OSC
C = 10 pF,
f
=16 MHz
OSC
VDDis stabilizedStartup timet
6 (startup)
1.6 (stabilized)
6 (startup)
1.2 (stabilized)
UnitMaxTypMinConditionsParameterSymbol
MHz161
kΩ220
pF20
(3)
mA
(3)
mA/V5
ms1
(1)
C is approximately equivalent to 2 x crystal Cload.
DocID14771 Rev 1274/124
OSCOUT
OSCIN
f
HSE
to core
C
L1
C
L2
R
F
STM8
Resonator
Consumption
control
g
m
R
m
C
m
L
m
C
O
Resonator
Electrical characteristicsSTM8S105xx
(2)
The oscillator selection can be optimized in terms of supply current using a high quality resonator with
small Rmvalue. Refer to crystal manufacturer for more details
(3)
Data based on characterization results, not tested in production.
(4)
t
SU(HSE)
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
Figure 20: HSE oscillator circuit diagram
HSE oscillator critical gmequation
g
mcrit
= (2 × Π × f
)2× Rm(2Co + C)
HSE
2
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1= CL2= C: Grounded external capacitance
gm>> g
mcrit
Internal clock sources and timing characteristics10.3.4
Subject to general operating conditions for VDDand TA.
High speed internal RC oscillator (HSI)
Table 34: HSI oscillator characteristics
UnitMaxTypMinConditionsParameterSymbol
HSI
MHz16Frequencyf
75/124DocID14771 Rev 12
ACC
Accuracy of HSI
HSI
oscillator
User-trimmed with
CLK_HSITRIMR register
for given VDDand T
conditions
(1)
A
STM8S105xxElectrical characteristics
UnitMaxTypMinConditionsParameterSymbol
(2)
%1.0
Accuracy of HSI
(3)
oscillator (factory
calibrated)
85 °C
2.95 ≤ VDD≤ 5.5 V,-40 °C
-3.0
≤ TA≤ 125 °C
t
su(HSI)
HSI oscillator
wakeup time
including calibration
I
DD(HSI)
consumption
(1)
Refer to application note.
(2)
Guaranteed by design, not tested in production.
(3)
Data based on characterization results, not tested in production.
Figure 21: Typical HSI accuracy at VDD= 5 V vs 5 temperatures
(3)
1.0-1.0VDD= 5 V, TA= 25°C
2.0-2.0VDD= 5 V, 25 °C ≤ TA≤
(3)
3.0
(2)
µs1.0
(3)
170HSI oscillator power
µA250
DocID14771 Rev 1276/124
Figure 22: Typical HSI accuracy vs VDD@ 4 temperatures
Low speed internal RC oscillator (LSI)
Subject to general operating conditions for VDDand TA.
Electrical characteristicsSTM8S105xx
Table 35: LSI oscillator characteristics
LSI
su(LSI)
DD(LSI)
(1)
Guaranteeed by design, not tested in production.
LSI oscillator wakeup timet
(1)
UnitMaxTypMinParameterSymbol
kHz146128110Frequencyf
µs7
µA5LSI oscillator power consumptionI
77/124DocID14771 Rev 12
Figure 23: Typical LSI accuracy vs VDD@ 4 temperatures
Memory characteristics10.3.5
RAM and hardware registers
STM8S105xxElectrical characteristics
Table 36: RAM and hardware registers
UnitMinConditionsParameterSymbol
V
RM
(1)
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)
(1)
Halt mode (or reset)Data retention mode
IT-max
(2)
VV
or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.
refer to Operating conditions for the value of V
(2)
Refer to the Operating conditions section for the value of V
IT-max
IT-max
Flash program memory/data EEPROM memory
General conditions: TA= -40 to 125°C.
Table 37: Flash program memory/data EEPROM memory
ConditionsParameterSymbol
V
DD
CPU
≤ 16 MHzOperating voltage (all modes,
(1)
UnitMaxTypMin
V5.52.95f
execution/write/erase)
t
prog
ms6.66.0Standard programming time
(including erase) for
byte/word/block (1 byte/4
bytes/128 bytes)
mA2.0Supply current (Flash
programming or erasing for 1 to
128 bytes)
(1)
Data based on characterization results, not tested in production.
(2)
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
even when a write/erase operation addresses a single byte.
I/O port pin characteristics10.3.6
General characteristics
Subject to general operating conditions for VDDand TAunless otherwise specified. All unused
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Table 38: I/O static characteristics
UnitMaxTypMinConditionsParameterSymbol
V
IL
voltage
VDD= 5 VInput low level
-0.3
0.3 x V
DD
V
79/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
UnitMaxTypMinConditionsParameterSymbol
V
IH
V
hys
pu
tR, t
I
lkg
I
lkg ana
Input high level
voltage
Hysteresis
Pull-up resistorR
F
time(10 % - 90 %)
Input leakage
current, analog
and digital
Analog input
leakage current
(1)
VDD= 5 V, VIN= V
SS
Fast I/Os load = 50 pFRise and fall
Standard and high sink
I/OsLoad = 50 pF
Fast I/Os load = 20 pF
Standard and high sink
I/OsLoad = 20 pF
VSS≤ VIN≤ V
VSS≤ VIN≤ V
DD
DD
0.7 x
V
DD
VDD+ 0.3
V
(3)
35
(3)
125
(3)
20
(3)
50
(2)
±1.0
(2)
±250
V
mV700
kΩ805530
ns
µA
nA
I
lkg(inj)
adjacent I/O
(1)
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization
(2)
Injection current ±4 mALeakage current in
±1.0
(2)
results, not tested in production.
(2)
Data based on characterization results, not tested in production.
Figure 38: Typical NRST pull-up resistance vs VDD@ 4 temperatures
Figure 39: Typical NRST pull-up current vs VDD@ 4 temperatures
The reset network shown in the following figure protects the device against parasitic resets.
The user must ensure that the level on the NRST pin can go below V
IL(NRST)
max. (see Table
38: I/O static characteristics ), otherwise the reset is not taken into account internally.
For power consumption sensitive applications, the external reset capacitor value can be
reduced to limit the charge/discharge current. If NRST signal is used to reset external circuitry,
attention must be taken to the charge/discharge time of the external capacitor to fulfill the
external devices reset timing conditions. Minimum recommended capacity is 100 nF.
DocID14771 Rev 1290/124
External
reset
circuit
(optional)
0.1 μF
NRST
VDD
RPU
Filter
Internal reset
STM8
Electrical characteristicsSTM8S105xx
Figure 40: Recommended reset pin protection
SPI serial peripheral interface10.3.9
Unless otherwise specified, the parameters given in the following table are derived from tests
performed under ambient temperature, f
t
MASTER
= 1/f
MASTER
.
MASTER
Refer to I/O port characteristics for more details on the input/output alternate function
characteristics (NSS, SCK, MOSI, MISO).
frequency and VDDsupply voltage conditions.
f
1
SCK
t
c(SCK)
t
r(SCK)
t
f(SCK)
su(NSS)
h(NSS)
t
w(SCKH)
t
w(SCKL)
t
su(MI)
t
su(SI)
(1)
(1)
(1)
(1)
(1)
(1)
frequency
and fall time
low time
setup time
Table 43: SPI characteristics
Slave modeNSS setup timet
Master modeSCK high and
4 x
t
MASTER
t
/2 -
SCK
15
5Master modeData input
60Slave mode
25Capacitive load: C = 30 pFSPI clock rise
t
SCK
15
UnitMaxMinConditionsParameterSymbol
MHz80Master modeSPI clock
ns
ns
ns70Slave modeNSS hold timet
/2 +
ns
ns
setup time
5Slave modeData input
ns
91/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
UnitMaxMinConditionsParameterSymbol
t
h(MI)
t
h(SI)
t
a(SO)
t
dis(SO)
t
v(SO)
t
v(MO)
t
h(SO)
(1)
(1)
(1) (2)
(1) (3)
(1)
(1)
(1)
time
time
access time
disable time
Data output
valid time
Data output
valid time
Data output
hold time
Slave modeData output
(after enable edge)
(after enable edge)
(after enable edge)
7Master modeData input hold
10Slave modeData input hold
3 x
t
MASTER
25Slave modeData output
ns
ns
ns
ns
73Slave mode
ns
36Master mode
ns
28Slave mode
ns
t
h(MO)
(1)
12Master mode
(after enable edge)
(1)
Values based on design simulation and/or characterization results, and not tested in
production.
(2)
Min time is for the minimum time to drive the output and the max time is for the maximum
time to validate the data.
(3)
Min time is for the minimum time to invalidate the output and the max time is for the
1. Measurement points are made at CMOS levels: 0.3 VDDand 0.7 VDD.
(1)
93/124DocID14771 Rev 12
ai14136b
SCK intput
CPHA=0
MOSI
OUTUT
MISO
INPUT
CPHA=0
MSBIN
MSB OUT
BIT6 IN
LSB OUT
LSB IN
CPOL=0
CPOL=1
BIT1 OUT
NSSinput
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
r(SCK)
t
f(SCK)
t
h(MI)
High
SCK output
CPHA=1
CPHA=1
CPOL=0
CPOL=1
t
su(MI)
t
v(MO)
t
h(MO)
STM8S105xxElectrical characteristics
Figure 43: SPI timing diagram - master mode
(1)
1. Measurement points are made at CMOS levels: 0.3 VDDand 0.7 VDD.
w(SCLL)
w(SCLH)
su(SDA)
h(SDA)
t
r(SDA)
t
r(SCL)
t
f(SDA)
t
f(SCL)
I2C interface characteristics10.3.10
SDA data hold timet
Table 44: I2C characteristics
Standard mode I2CParameterSymbol
Min
(3)
0
(2)
Max
(2)
Min
(4)
0
(2)
Max
(1)
(2)
(3)
UnitFast mode I2C
μs1.34.7SCL clock low timet
μs0.64.0SCL clock high timet
ns100250SDA setup timet
ns900
ns3001000SDA and SCL rise time
ns300300SDA and SCL fall time
DocID14771 Rev 1294/124
ai15385b
START
SDA
I²C bus
V
DD
V
DD
STM8S105xx
SDA
SCL
t
f(SDA)
t
r(SDA)
SCL
t
h(STA)
t
w(SCLH)
t
w(SCLL)
t
su(SDA)
t
r(SCL)
t
f(SCL)
t
h(SDA)
START REPEATED
START
t
su(STA)
t
su(STO)
STOP
t
su(STA:STO)
Electrical characteristicsSTM8S105xx
(1)
Standard mode I2CParameterSymbol
UnitFast mode I2C
Max
(2)
μs0.64.0START condition hold timet
μs0.64.7
h(STA)
t
su(STA)
Repeated START condition
Min
(2)
Max
(2)
Min
(2)
setup time
su(STO)
t
w(STO:STA)
STOP to START condition time
μs0.64.0STOP condition setup timet
μs1.34.7
(bus free)
b
(1)
f
MASTER
(2)
Data based on standard I2C protocol requirement, not tested in production.
(3)
The maximum hold time of the start condition has only to be met if the interface does not stretch the
, must be at least 8 MHz to achieve max fast I2C speed (400kHz).
pF400400Capacitive load for each bus lineC
low time.
(4)
The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge
the undefined region of the falling edge of SCL.
Figure 44: Typical application with I2C bus and timing diagram
1. Measurement points are made at CMOS levels: 0.3 x VDDand 0.7 x V
(1)
DD
95/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
10-bit ADC characteristics10.3.11
Subject to general operating conditions for V
Table 45: ADC characteristics
ADC
DDA
Positive reference voltageV
Negative reference voltageV
Conversion voltage range
(2)
V
REF+
REF-
AIN
Devices with
external
V
, f
DDA
MASTER
=2.95 to 5.5 VADC clock frequencyf
DDA
=4.5 to 5.5 V
DDA
REF+/VREF-
, and TAunless otherwise specified.
UnitMaxTypMinConditionsParameterSymbol
MHz4.01.0V
6.01.0V
V5.53.0Analog supplyV
2.75
V SSA
V
REF-
(1)
V DDAV SSA
DDA
(1)
REF+
VV
V0.5
V
VV
pins
C
ADC
pF3.0Internal sample and hold
capacitor
(2)
S
STAB
t
CONV
ADC
ADC
ADC
= 4 MHzSampling timet
= 6 MHz
= 4 MHzTotal conversion time
0.5f
µs0.75f
µs7.0Wakeup time from standbyt
µs3.5f
(including sampling time,
10-bit resolution)
(1)
Data guaranteed by design, not tested in production..
(2)
During the sample time the input capacitance C
ADC
= 6 MHz
AIN
14
(3 pF max) can be charged/discharged
µs2.33f
1/f
by the external source. The internal resistance of the analog source must allow the
capacitance to reach its final voltage level within tS.After the end of the sample time tS,
ADC
DocID14771 Rev 1296/124
Electrical characteristicsSTM8S105xx
changes of the analog input voltage have no effect on the conversion result. Values for the
sample clock tSdepend on programming.
|ET|
|EO|
|EG|
Table 46: ADC accuracy with R
(2)
(2)
(2)
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
= 2 MHzTotal unadjusted error
= 4 MHz
= 6 MHz
= 2 MHzOffset error
= 4 MHz
= 6 MHz
= 2 MHzGain error
= 4 MHz
< 10 kΩ , V
AIN
DDA
TypConditionsParameterSymbol
= 5 V
(1)
UnitMax
LSB2.51.0f
3.01.4f
3.51.6f
2.00.6f
2.51.1f
2.51.2f
2.00.2f
2.50.6f
= 6 MHz
ADC
|ED|
|EL|
(1)
Data based on characterisation results, not tested in production.
(2)
ADC accuracy vs. negative injection current: Injecting negative current on any of the
(2)
(2)
ADC
ADC
ADC
ADC
ADC
ADC
= 2 MHzDifferential linearity error
= 4 MHz
= 6 MHz
= 2 MHzIntegral linearity error
= 4 MHz
= 6 MHz
2.50.8f
1.50.7f
1.50.7f
1.50.8f
1.50.6f
1.50.6f
1.50.6f
analog input pins should be avoided as this significantly reduces the accuracy of the
conversion being performed on another analog input. It is recommended to add a Schottky
diode (pin to ground) to standard analog pins which may potentially inject negative current.
97/124DocID14771 Rev 12
STM8S105xxElectrical characteristics
Any positive injection current within the limits specified for I
INJ(PIN)
port pin characteristics section does not affect the ADC accuracy.
|ET|
|EO|
|EG|
|ED|
Table 47: ADC accuracy with R
(2)
(2)
(2)
(2)
ADC
ADC
ADC
ADC
ADC
ADC
ADC
< 10 kΩ R
AIN
= 2 MHzTotal unadjusted error
= 4 MHz
= 2 MHzOffset error
= 4 MHz
= 2 MHzGain error
= 4 MHz
= 2 MHzDifferential linearity error
AIN
, V
and ΣI
DDA
TypConditionsParameterSymbol
INJ(PIN)
= 3.3 V
2.51.6f
1.50.7f
2.01.3f
1.50.2f
2.00.5f
1.00.7f
in the I/O
(1)
UnitMax
LSB2.01.1f
= 4 MHz
ADC
|EL|
(1)
Data based on characterisation results, not tested in production.
(2)
ADC accuracy vs. negative injection current: Injecting negative current on any of the
(2)
ADC
ADC
= 2 MHzIntegral linearity error
= 4 MHz
1.00.7f
1.50.6f
1.50.6f
analog input pins should be avoided as this significantly reduces the accuracy of the
conversion being performed on another analog input. It is recommended to add a Schottky
diode (pin to ground) to standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for I
INJ(PIN)
and ΣI
INJ(PIN)
in I/O port
pin characteristics does not affect the ADC accuracy.
DocID14771 Rev 1298/124
Figure 45: ADC accuracy characteristics
STM8
10-bit A/D
conversion
R
AIN
C
AIN
V
AIN
AINx
V
DD
V
T
0.6 V
V
T
0.6 V
I
L
± 1 µA
C
ADC
1. Example of an actual transfer curve.
2. The ideal transfer curve
3. End point correlation line
Electrical characteristicsSTM8S105xx
ET= Total unadjusted error: maximum deviation between the actual and the ideal transfer
curves.
EO= Offset error: deviation between the first actual transition and the first ideal one.
EG= Gain error: deviation between the last ideal transition and the last actual one.
ED= Differential linearity error: maximum deviation between actual steps and the ideal
one.
EL= Integral linearity error: maximum deviation between any actual transition and the end
point correlation line.
Figure 46: Typical application with ADC
EMC characteristics10.3.12
Susceptibility tests are performed on a sample basis during product characterization.
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
•
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to VDDand V
•
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
SS
Designing hardened software to avoid noise problems10.3.12.2
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
•
Unexpected reset
•
Critical data corruption (control registers...)
•
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Table 48: EMS data
Level/
class
(1)
2/B
V
FESD
Voltage limits to be
applied on any I/O pin to
induce a functional
disturbance
ConditionsParameterSymbol
VDD= 5 V, TA= 25 °C, f
conforming to IEC 1000-4-2
MASTER
= 16 MHz,
V
EFTB
Fast transient voltage
burst limits to be applied
through 100 pF on V
DD
DocID14771 Rev 12100/124
VDD= 5 V, TA= 25 °C ,f
MHz,conforming to IEC 1000-4-4
MASTER
= 16
4/A
(1)
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