Table 18.Total current consumption with code execution in run mode at V
Table 19.Total current consumption with code execution in run mode at V
Table 20.Total current consumption in wait mode at V
Table 21.Total current consumption in wait mode at V
Table 22.Total current consumption in active halt mode at V
Table 23.Total current consumption in active halt mode at V
Table 24.Total current consumption in halt mode at V
Table 25.Total current consumption in halt mode at V
Figure 14.Typical HSI frequency variation vs V
Figure 15.Typical LSI frequency variation vs V
Figure 16.Typical V
Figure 17.Typical pull-up resistance vs V
Figure 18.Typical pull-up current vs V
Figure 19.Typ. V
Figure 20.Typ. V
Figure 21.Typ. V
Figure 22.Typ. V
Figure 23.Typ. V
Figure 24.Typ. V
Figure 25.Typ. V
Figure 26.Typ. V
Figure 27.Typ. V
Figure 28.Typ. V
Figure 29.Typical NRST V
Figure 30.Typical NRST pull-up resistance vs V
Figure 31.Typical NRST pull-up current vs V
This datasheet contains the description of the STM8S007xx value line features, pinout,
electrical characteristics, mechanical data and ordering information.
●For complete information on the STM8S microcontroller memory, registers and
peripherals, please refer to the STM8S and STM8A microcontroller families reference
manual (RM0016).
●For information on programming, erasing and protection of the internal Flash memory
please refer to the PM0051 (How to program STM8S and STM8A Flash program
memory and data EEPROM).
●For information on the debug and SWIM (single wire interface module) refer to the
STM8 SWIM communication protocol and debug module user manual (UM0470).
●For information on the STM8 core, please refer to the STM8 CPU programming manual
(PM0044).
8/90Doc ID 022171 Rev 3
STM8S007C8Description
2 Description
The STM8S007xx value line 8-bit microcontrollers offer 64 Kbytes Flash program memory.
They are referred to as high-density devices in the STM8S microcontroller family reference
manual.
All devices of the STM8S007xx value line provide the following benefits: reduced system
cost, performance robustness, short development cycles, and product longevity.
The system cost is reduced thanks to a true data EEPROM for up to 100 k write/erase
cycles and a high system integration level with internal clock oscillators, watchdog, and
brown-out reset.
Device performance is ensured by 20 MIPS at 24 MHz CPU clock frequency and enhanced
characteristics which include robust I/O, independent watchdogs (with a separate clock
source), and a clock security system.
Short development cycles are guaranteed due to application scalability across a common
family product architecture with compatible pinout, memory map and modular peripherals.
Full documentation is offered with a wide choice of development tools.
Product longevity is ensured in the STM8S family thanks to their advanced core which is
made in a state-of-the art technology for applications with 2.95 V to 5.5 V operating supply.
Table 1.STM8S007xx value line features
FeaturesSTM8S007C8
Pin count48
Max. number of GPIOs (I/O)38
External interrupt pins35
Timer CAPCOM channels9
Timer complementary outputs3
A/D converter channels10
HIgh sink I/Os16
High density Flash program memory 64 Kbytes
Data EEPROM128 bytes
RAM6 Kbytes
Doc ID 022171 Rev 39/90
Block diagramSTM8S007C8
XTAL 1-24 MHz
RC int. 16 MHz
RC int. 128 kHz
STM8 core
Debug/SWIM
I
2
C
SPI
UART1
UART3
AWU ti mer
Reset block
Reset
POR
BOR
Clock controller
Detector
Clock to peripherals and core
10 Mbit/s
LIN master
16 channels
Address and data bus
Window WDG
64 Kbytes high
128 bytes
6 Kbytes RAM
Boot ROM
ADC2
Reset
400 Kbit/s
Master/slave
Single wire
autosynchro
debug interf.
SPI emul.
density program Flash
data EEPROM
16-bit general purpose
16-bit advanced control
timer (TIM1)
timers (TIM2, TIM3)
8-bit basic timer
(TIM4)
Beeper
1/2/4 kHz
beep
Independent WDG
4 CAPCOM
channels
Up to
5 CAPCOM
channels
Up to
+ 3 complementary
outputs
3 Block diagram
Figure 1.STM8S007xx value line block diagram
10/90Doc ID 022171 Rev 3
STM8S007C8Product overview
4 Product overview
The following section intends to give an overview of the basic features of the STM8S007xx
value line functional modules and peripherals.
For more detailed information please refer to the corresponding family reference manual
(RM0016).
4.1 Central processing unit STM8
The 8-bit STM8 core is designed for code efficiency and performance.
It contains 6 internal registers which are directly addressable in each execution context, 20
addressing modes including indexed indirect and relative addressing and 80 instructions.
Architecture and registers
●Harvard architecture
●3-stage pipeline
●32-bit wide program memory bus - single cycle fetching for most instructions
●X and Y 16-bit index registers - enabling indexed addressing modes with or without
offset and read-modify-write type data manipulations
●8-bit accumulator
●24-bit program counter - 16-Mbyte linear memory space
●16-bit stack pointer - access to a 64 K-level stack
●8-bit condition code register - 7 condition flags for the result of the last instruction
Addressing
●20 addressing modes
●Indexed indirect addressing mode for look-up tables located anywhere in the address
space
●Stack pointer relative addressing mode for local variables and parameter passing
Instruction set
●80 instructions with 2-byte average instruction size
●Standard data movement and logic/arithmetic functions
●8-bit by 8-bit multiplication
●16-bit by 8-bit and 16-bit by 16-bit division
●Bit manipulation
●Data transfer between stack and accumulator (push/pop) with direct stack access
●Data transfer using the X and Y registers or direct memory-to-memory transfers
Doc ID 022171 Rev 311/90
Product overviewSTM8S007C8
4.2 Single wire interface module (SWIM) and debug module (DM)
The single wire interface module and debug module permits non-intrusive, real-time incircuit debugging and fast memory programming.
SWIM
Single wire interface module for direct access to the debug module and memory
programming. The interface can be activated in all device operation modes. The maximum
data transmission speed is 145 bytes/ms.
Debug module
The non-intrusive debugging module features a performance close to a full-featured
emulator. Beside memory and peripherals, also CPU operation can be monitored in realtime by means of shadow registers.
●R/W to RAM and peripheral registers in real-time
●R/W access to all resources by stalling the CPU
●Breakpoints on all program-memory instructions (software breakpoints)
●Nested interrupts with three software priority levels
●32 interrupt vectors with hardware priority
●Up to 33 external interrupts on six vectors including TLI
●Trap and reset interrupts
4.4 Flash program and data EEPROM memory
●64 Kbytes of high density Flash program single voltage Flash memory
●128 bytes true data EEPROM
●Read while write: Writing in data memory possible while executing code in program
memory.
●User option byte area
Write protection (WP)
Write protection of Flash program memory and data EEPROM is provided to avoid
unintentional overwriting of memory that could result from a user software malfunction.
There are two levels of write protection. The first level is known as MASS (memory access
security system). MASS is always enabled and protects the main Flash program memory,
data EEPROM and option bytes.
To perform in-application programming (IAP), this write protection can be removed by writing
a MASS key sequence in a control register. This allows the application to write to data
EEPROM, modify the contents of main program memory or the device option bytes.
A second level of write protection, can be enabled to further protect a specific area of
memory known as UBC (user boot code). Refer to Figure 2.
12/90Doc ID 022171 Rev 3
STM8S007C8Product overview
Programmable area from 1 Kbyte
Data
UBC area
Program memory area
Data memory area (up to 2 Kbytes)
(2 first pages) up to 64 Kbytes
EEPROM
Remains write protected during IAP
memory
64 Kbytes
Flash
Write access possible for IAP
program
memory
(1 page steps)
Option bytes
The size of the UBC is programmable through the UBC option byte (Ta b le 1 2), in increments
of 1 page (512 bytes) by programming the UBC option byte in ICP mode.
This divides the program memory into two areas:
●Main program memory: 64 Kbytes minus UBC
●User-specific boot code (UBC): Configurable up to 64 Kbytes
The UBC area remains write-protected during in-application programming. This means that
the MASS keys do not unlock the UBC area. It protects the memory used to store the boot
program, specific code libraries, reset and interrupt vectors, the reset routine and usually the
IAP and communication routines.
Figure 2.Flash memory organisation
Read-out protection (ROP)
The read-out protection blocks reading and writing the Flash program memory and data
EEPROM memory in ICP mode (and debug mode). Once the read-out protection is
activated, any attempt to toggle its status triggers a global erase of the program and data
memory. Even if no protection can be considered as totally unbreakable, the feature
provides a very high level of protection for a general purpose microcontroller.
Doc ID 022171 Rev 313/90
Product overviewSTM8S007C8
4.5 Clock controller
The clock controller distributes the system clock (f
MASTER)
coming from different oscillators
to the core and the peripherals. It also manages clock gating for low power modes and
ensures clock robustness.
Features
●Clock prescaler: To get the best compromise between speed and current
consumption the clock frequency to the CPU and peripherals can be adjusted by a
programmable prescaler.
●Safe clock switching: Clock sources can be changed safely on the fly in run mode
through a configuration register. The clock signal is not switched until the new clock
source is ready. The design guarantees glitch-free switching.
●Clock management: To reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
●Master clock sources: Four different clock sources can be used to drive the master
clock:
–1-24 MHz high-speed external crystal (HSE)
–Up to 24 MHz high-speed user-external clock (HSE user-ext)
–16 MHz high-speed internal RC oscillator (HSI)
–128 kHz low-speed internal RC (LSI)
●Startup clock: After reset, the microcontroller restarts by default with an internal 2
MHz clock (HSI/8). The prescaler ratio and clock source can be changed by the
application program as soon as the code execution starts.
●Clock security system (CSS): This feature can be enabled by software. If an HSE
clock failure occurs, the internal RC (16 MHz/8) is automatically selected by the CSS
and an interrupt can optionally be generated.
●Configurable main clock output (CCO): This outputs an external clock for use by the
application.
Table 2.Peripheral clock gating bit assignments in CLK_PCKENR1/2 registers
For efficent power management, the application can be put in one of four different low-power
modes. You can configure each mode to obtain the best compromise between lowest power
consumption, fastest start-up time and available wakeup sources.
●Wait mode: In this mode, the CPU is stopped, but peripherals are kept running. The
wakeup is performed by an internal or external interrupt or reset.
●Active halt mode with regulator on: In this mode, the CPU and peripheral clocks are
stopped. An internal wakeup is generated at programmable intervals by the auto wake
up unit (AWU). The main voltage regulator is kept powered on, so current consumption
is higher than in active halt mode with regulator off, but the wakeup time is faster.
Wakeup is triggered by the internal AWU interrupt, external interrupt or reset.
●Active halt mode with regulator off: This mode is the same as active halt with
regulator on, except that the main voltage regulator is powered off, so the wake up time
is slower.
●Halt mode: In this mode the microcontroller uses the least power. The CPU and
peripheral clocks are stopped, the main voltage regulator is powered off. Wakeup is
triggered by external event or reset.
4.7 Watchdog timers
The watchdog system is based on two independent timers providing maximum security to
the applications.
Activation of the watchdog timers is controlled by option bytes or by software. Once
activated, the watchdogs cannot be disabled by the user program without performing a
reset.
Window watchdog timer
The window watchdog is used to detect the occurrence of a software fault, usually
generated by external interferences or by unexpected logical conditions, which cause the
application program to abandon its normal sequence.
The window function can be used to trim the watchdog behavior to match the application
perfectly.
The application software must refresh the counter before time-out and during a limited time
window.
A reset is generated in two situations:
1.Timeout: At 16 MHz CPU clock the time-out period can be adjusted between 75 µs up
to 64 ms.
2. Refresh out of window: The downcounter is refreshed before its value is lower than the
one stored in the window register.
Doc ID 022171 Rev 315/90
Product overviewSTM8S007C8
Independent watchdog timer
The independent watchdog peripheral can be used to resolve processor malfunctions due to
hardware or software failures.
It is clocked by the 128 kHZ LSI internal RC clock source, and thus stays active even in case
of a CPU clock failure
The IWDG time base spans from 60 µs to 1 s.
4.8 Auto wakeup counter
●Used for auto wakeup from active halt mode
●Clock source: Internal 128 kHz internal low frequency RC oscillator or external clock
●LSI clock can be internally connected to TIM3 input capture channel 1 for calibration
4.9 Beeper
The beeper function outputs a signal on the BEEP pin for sound generation. The signal is in
the range of 1, 2 or 4 kHz.
4.10 TIM1 - 16-bit advanced control timer
This is a high-end timer designed for a wide range of control applications. With its
complementary outputs, dead-time control and center-aligned PWM capability, the field of
applications is extended to motor control, lighting and half-bridge driver
●16-bit up, down and up/down autoreload counter with 16-bit prescaler
●Four independent capture/compare channels (CAPCOM) configurable as input
capture, output compare, PWM generation (edge and center aligned mode) and single
pulse mode output
●Synchronization module to control the timer with external signals
●Break input to force the timer outputs into a defined state
●Three complementary outputs with adjustable dead time
●Encoder mode
●Interrupt sources: 3 x input capture/output compare, 1 x overflow/update, 1 x break
4.11 TIM2, TIM3 - 16-bit general purpose timers
●16-bit autoreload (AR) up-counter
●15-bit prescaler adjustable to fixed power of 2 ratios 1…32768
●Timers with 3 or 2 individually configurable capture/compare channels
●PWM mode
●Interrupt sources: 2 or 3 x input capture/output compare, 1 x overflow/update
16/90Doc ID 022171 Rev 3
STM8S007C8Product overview
4.12 TIM4 - 8-bit basic timer
●8-bit autoreload, adjustable prescaler ratio to any power of 2 from 1 to 128
●Clock source: CPU clock
●Interrupt source: 1 x overflow/update
Table 3.TIM timer features
Counter
Timer
TIM1 16Any integer from 1 to 65536Up/down43Yes
TIM2 16Any power of 2 from 1 to 32768Up30No
TIM316Any power of 2 from 1 to 32768Up20No
TIM48Any power of 2 from 1 to 128Up00No
size
(bits)
Prescaler
Counting
mode
CAPCOM
channels
Complem.
outputs
4.13 Analog-to-digital converter (ADC2)
STM8S007xx value lineproducts contain a 10-bit successive approximation A/D converter
(ADC2) with up to 10 multiplexed input channels and the following main features:
●Input voltage range: 0 to V
●
Conversion time: 14 clock cycles
●Single and continuous modes
●External trigger input
●Trigger from TIM1 TRGO
●End of conversion (EOC) interrupt
DDA
Ext.
trigger
Timer
synchr-
onization/
chaining
No
4.14 Communication interfaces
The following communication interfaces are implemented:
2. (T) True open drain (P-buffer and protection diode to V
3. [ ] alternate function remapping option (If the same alternate function is shown twice, it indicates an exclusive choice not a
duplication of the function).
Doc ID 022171 Rev 321/90
not implemented).
DD
Pinouts and pin descriptionSTM8S007C8
Table 4.Legend/abbreviations for LQFP48 pin description table
Typ eI = input, O = output, S = power supply
floating
Input
wpu = weak pull-up
Ext. interrupt = external interrupt
HS = high sink
O1 = Slow (up to 2 MHz)
Speed
O3 = Fast/slow programmability with slow as default state after reset
Output
O4 = Fast/slow programmability with fast as default state after reset
OD = open drain
PP = push pull
Reset stateBold X
(pin state after internal reset release)
Unless otherwise specified, the pin state is the same during the reset phase and
after the internal reset release.
Table 5.LQFP48 pin description
InputOutput
Default
Pin number
Pin name
Typ e
wpu
floating
Ext. interrupt
High sink
OD
Speed
PP
Main function
alternate
function
(after reset)
1NRSTI/OXReset
2PA1/OSCINI/O XXO1XXPort A1
3PA2/OSCOUTI/O X
4V
SSIO_1
5V
SS
SI/O ground
SDigital ground
XXO1XXPort A2
Resonator/
crystal in
Resonator/
crystal out
6VCAPS1.8 V regulator capacitor
Alternate
function
after remap
[option bit]
7V
DD
8V
DDIO_1
SDigital power supply
SI/O power supply
9PA3/TIM2_CH3I/O XXXO1XXPort A3
(1)
10PA4/UART1_RX
I/O XXXHSO3XXPort A4 UART1 receive
11PA5/UART1_TXI/O XXXHSO3XXPort A5
12PA6/UART1_CKI/O X
13V
DDA
SAnalog power supply
XXHSO3XXPort A6
22/90Doc ID 022171 Rev 3
Timer 2 channel3
UART1
transmit
UART1
synchronous
clock
TIM3_CH1
[AFR1]
STM8S007C8Pinouts and pin description
Table 5.LQFP48 pin description (continued)
InputOutput
Alternate
function
after remap
[option bit]
Pin number
14V
Pin name
SSA
Typ e
wpu
floating
Speed
High sink
Ext. interrupt
OD
PP
Main function
SAnalog ground
15PB7/AIN7I/O XXXO1XXPort B7
Default
alternate
function
(after reset)
Analog
input 7
16PB6/AIN6I/O X
17PB5/AIN5I/O X
18PB4/AIN4I/O X
19PB3/AIN3I/O X
XXO1XXPort B6
XXO1XXPort B5
XXO1XXPort B4
XXO1XXPort B3
20PB2/AIN2I/O XXXO1XXPort B2
21PB1/AIN1I/O X
22PB0/AIN0I/O X
23PE7/AIN8I/O X
24PE6/AIN9I/O X
25PE5/SPI_NSSI/O X
26PC1/TIM1_CH1I/O X
27PC2/TIM1_CH2I/O X
XXO1XXPort B1
XXO1XXPort B0
XXO1XXPort E7 Analog input 8
XXO1XXPort E6 Analog input 9
XXO1XXPort E5
XXHSO3XXPort C1
XXHSO3XXPort C2
Analog
input 6
Analog
input 5
Analog
input 4
Analog
input 3
Analog
input 2
Analog
input 1
Analog
input 0
SPI
master/slave
select
Timer 1 channel 1
Timer 1channel 2
2
C_SDA
I
[AFR6]
2
C_SCL
I
[AFR6]
TIM1_ETR
[AFR5]
TIM1_
CH3N
[AFR5]
TIM1_
CH2N
[AFR5]
TIM1_
CH1N
[AFR5]
28PC3/TIM1_CH3I/O X
29PC4/TIM1_CH4I/O X
30PC5/SPI_SCKI/O X
31V
32V
SSIO_2
DDIO_2
SI/O ground
SI/O power supply
XXHSO3XXPort C3
XXHSO3XXPort C4
Timer 1 channel 3
Timer 1 channel 4
XXHSO3XXPort C5 SPI clock
Doc ID 022171 Rev 323/90
Pinouts and pin descriptionSTM8S007C8
Table 5.LQFP48 pin description (continued)
InputOutput
Alternate
function
after remap
[option bit]
Pin name
Pin number
Typ e
wpu
floating
Speed
High sink
Ext. interrupt
OD
PP
Main function
33PC6/SPI_MOSII/O XXXHSO3XXPort C6
Default
alternate
function
(after reset)
SPI master
out/
slave in
34PC7/SPI_MISOI/O XXXHSO3XXPort C7
35PG0 I/O XXO1XXPort G0
36PG1 I/O X
XO1XXPort G1
37PE3/TIM1_BKINI/O XXX O1XXPort E3
38PE2/I
39PE1/I
2
C_SDAI/O XXO1T
2
C_SCLI/O XXO1T
(2)
(2)
Port E2 I2C data
Port E1 I2C clock
40PE0/CLK_CCOI/O XXXHSO3XXPort E0
41PD0/TIM3_CH2I/O X
42PD1/SWIM
(3)
I/O XXXHSO4X XPort D1
43PD2/TIM3_CH1I/O X
44PD3/TIM2_CH2I/O X
PD4/TIM2_CH1/B
45
EEP
I/O X
46PD5/ UART3_TXI/O X
47
PD6/
UART3_RX
(1)
I/O XXXO1XXPor t D6
XXHSO3XXPort D0
XXHSO3XXPort D2
XXHSO3XXPort D3
XXHSO3XXPort D4
XXO1XXPort D5
SPI master in/
slave out
Timer 1 break input
Configurable
clock output
Timer 3 channel 2
SWIM data
interface
Timer 3 channel 1
Timer 2 channel 2
Timer 2 channel 1
UART3 data
transmit
UART3 data
receive
TIM1_BKIN
[AFR3]/
CLK_CCO
[AFR2]
TIM2_CH3
[AFR1]
ADC_ETR
[AFR0]
BEEP output
[AFR7]
48PD7/TLII/O X
1. The default state of UART1_RX and UART3_RX pins is controlled by the ROM bootloader. These pins are
pulled up as part of the bootloader activation process and returned to the floating state before a return from
the bootloader.
2. In the open-drain output column, ‘T’ defines a true open-drain I/O(P-buffer, weak pull-up, and protection
diode to V
3. The PD1 pin is in input pull-up during the reset phase and after the internal reset release.
are not implemented).
DD
XXO1XXPort D7
Top lev e l
interrupt
Note:The slope control of true open drain pins cannot be programmed and by default is limited to
2 MHz.
24/90Doc ID 022171 Rev 3
STM8S007C8Pinouts and pin description
5.1 Alternate function remapping
As shown in the rightmost column of the pin description table, some alternate functions can
be remapped at different I/O ports by programming one of eight AFR (alternate function
remap) option bits. Refer to Section 8: Option bytes. When the remapping option is active,
the default alternate function is no longer available.
To use an alternate function, the corresponding peripheral must be enabled in the peripheral
registers.
Alternate function remapping does not effect GPIO capabilities of the I/O ports (see the
GPIO section of the family reference manual, RM0016).
Doc ID 022171 Rev 325/90
Memory and register mapSTM8S007C8
0x0 0 000 0
0x
00 17 FF
0x
00 180 0
0x
00 400 0
0x
00 3F FF
0x
00 407F
0x
00 4080
0x
00 47FF
0x
00 480 0
0x
00 4 87F
0x
00 490 0
0x
00 500 0
0x
00 4F FF
0x
00 57 FF
0x
00 580 0
0x
00 600 0
0x
00 5F FF
0x
00 67 FF
0x
00 680 0
0x
00 7EFF
0x
00 7 F0 0
0x
00 7F FF
0x
00 800 0
0x
00 808 0
0x
00 8 07F
0 x01 7FFF
MS19412V1
(see Table 8 and Table 9)
GPIO and peripheral registers
Reserved
Reserved
Reserved
Reserved
Reserved
1024 bytes stack
128 bytes data EEPROM
Option bytes
RAM
(6 Kbytes)
2 Kbytes boot ROM
CPU/SWIM/debug/ITC
register (see Table 10)
32 interrupt vectors
Flash program memory
(64 Kbytes)
6 Memory and register map
6.1 Memory map
Figure 4.Memory map
26/90Doc ID 022171 Rev 3
STM8S007C8Memory and register map
Ta bl e 6 lists the boundary addresses for each memory size. The top of the stack is at the
RAM end address in each case.
Table 6.Flash, Data EEPROM and RAM boundary addresses
Memory areaSize (bytes)Start addressEnd address
Flash program memory64 K0x00 80000x01 7FFF
RAM6 K0x00 00000x00 17FF
Data EEPROM1280x00 40000x00 407F
6.2 Register map
Table 7.I/O port hardware register map
AddressBlockRegister labelRegister name
0x00 5000
PA_ODRPort A data output latch register0x00
Reset
status
0x00 5001PA_IDRPort A input pin value register0x00
0x00 5002PA_DDRPort A data direction register0x00
Por t A
0x00 5003PA_CR1Port A control register 10x00
0x00 5004PA_CR2Port A control register 20x00
0x00 5005
PB_ODRPort B data output latch register0x00
0x00 5006PB_IDRPort B input pin value register0x00
0x00 5007PB_DDRPort B data direction register0x00
Por t B
0x00 5008PB_CR1Port B control register 10x00
0x00 5009PB_CR2Port B control register 20x00
0x00 500A
PC_ODRPort C data output latch register0x00
0x00 500BPB_IDRPort C input pin value register0x00
0x00 500CPC_DDRPort C data direction register0x00
Por t C
0x00 500DPC_CR1Port C control register 10x00
0x00 500EPC_CR2Port C control register 20x00
0x00 500F
PD_ODRPort D data output latch register0x00
0x00 5010PD_IDRPort D input pin value register0x00
0x00 5011PD_DDRPort D data direction register0x00
Por t D
0x00 5012PD_CR1Port D control register 10x02
0x00 5013PD_CR2Port D control register 20x00
Doc ID 022171 Rev 327/90
Memory and register mapSTM8S007C8
Table 7.I/O port hardware register map (continued)
AddressBlockRegister labelRegister name
0x00 5014
0x00 5015PE_IDRPort E input pin value register0x00
0x00 5016PE_DDRPort E data direction register0x00
0x00 5017PE_CR1Port E control register 10x00
0x00 5018PE_CR2Port E control register 20x00
0x00 5019
0x00 501APF_IDRPort F input pin value register0x00
0x00 501BPF_DDRPort F data direction register0x00
0x00 501CPF_CR1Port F control register 10x00
0x00 501DPF_CR2Port F control register 20x00
0x00 501E
0x00 501FPG_IDRPort G input pin value register0x00
0x00 5020PG_DDRPort G data direction register0x00
0x00 5021PG_CR1Port G control register 10x00
0x00 5022PG_CR2Port G control register 20x00
0x00 5023
0x00 5024PH_IDRPort H input pin value register0x00
Por t E
Por t F
Por t G
PE_ODRPort E data output latch register0x00
PF_ODRPort F data output latch register0x00
PG_ODRPort G data output latch register0x00
PH_ODRPort H data output latch register0x00
Reset
status
0x00 5025PH_DDRPort H data direction register0x00
0x00 5026PH_CR1Port H control register 10x00
0x00 5027PH_CR2Port H control register 20x00
0x00 5028
0x00 5029PI_IDRPort I input pin value register0x00
0x00 502API_DDRPort I data direction register0x00
0x00 502BPI_CR1Port I control register 10x00
0x00 502CPI_CR2Port I control register 20x00
Por t H
PI_ODRPort I data output latch register0x00
Por t I
28/90Doc ID 022171 Rev 3
STM8S007C8Memory and register map
Table 8.General hardware register map
AddressBlockRegister labelRegister name
0x00 5050 to
0x00 5059
0x00 505A
FLASH_CR1Flash control register 10x00
Reserved area (10 bytes)
0x00 505BFLASH_CR2Flash control register 20x00
0x00 505CFLASH_NCR2Flash complementary control register 20xFF
2. Product dependent value, see Figure 4: Memory map.
Reserved area (5 bytes)
Reset
Status
36/90Doc ID 022171 Rev 3
STM8S007C8Interrupt vector mapping
7 Interrupt vector mapping
Table 10.Interrupt mapping
IRQ
no.
Source
block
Description
Wakeup from
Halt mode
Wakeup from
Active-halt mode
Vector address
RESETResetYesYes0x00 8000
TRAPSoftware interrupt--0x00 8004
0TLIExternal top level interrupt--0x00 8008
1AWUAuto wake up from halt-Yes0x00 800C
2CLKClock controller--0x00 8010
3EXTI0Port A external interrupts Yes
(1)
Ye s
(1)
0x00 8014
4EXTI1Port B external interrupts YesYes0x00 8018
5EXTI2Port C external interrupts YesYes0x00 801C
6EXTI3Port D external interrupts YesYes0x00 8020
7EXTI4Port E external interrupts YesYes0x00 8024
8Reserved0x00 8028
9Reserved0x00 802C
10SPIEnd of transferYesYes0x00 8030
11TIM1
TIM1 update/overflow/underflow/
trigger/break
--0x00 8034
12TIM1TIM1 capture/compare--0x00 8038
13TIM2TIM2 update /overflow--0x00 803C
14TIM2TIM2 capture/compare--0x00 8040
15TIM3Update/overflow--0x00 8044
16TIM3Capture/compare--0x00 8048
17UART1Tx complete--0x00 804C
18UART1Receive register DATA FULL--0x00 8050
19I
2
CI
2
C interruptYesYes0x00 8054
20UART3Tx complete--0x00 8058
21UART3Receive register DATA FULL--0x00 805C
22ADC2ADC2 end of conversion--0x00 8060
23TIM4TIM4 update/overflow--0x00 8064
24Flash EOP/WR_PG_DIS--0x00 8068
Reserved
1. Except PA1
0x00 806C to
0x00 807C
Doc ID 022171 Rev 337/90
Option bytesSTM8S007C8
8 Option bytes
Option bytes contain configurations for device hardware features as well as the memory
protection of the device. They are stored in a dedicated block of the memory. Except for the
ROP (read-out protection) byte, each option byte has to be stored twice, in a regular form
(OPTx) and a complemented one (NOPTx) for redundancy.
Option bytes can be modified in ICP mode (via SWIM) by accessing the EEPROM address
shown in Table 11: Option bytes below. Option bytes can also be modified ‘on the fly’ by the
application in IAP mode, except the ROP option that can only be modified in ICP mode (via
SWIM).
Refer to the STM8S Flash programming manual (PM0051) and STM8 SWIM
communication protocol and debug module user manual (UM0470) for information on SWIM
programming procedures.
0xAA: Enable readout protection (write access via SWIM protocol)
Note: Refer to the family reference manual (RM0016) section on
Flash/EEPROM memory readout protection for details.
UBC[7:0] User boot code area
0x00: no UBC, no write-protection
0x01: Pages 0 to 1 defined as UBC, memory write-protected
0x02: Pages 0 to 3 defined as UBC, memory write-protected
0x03: Pages 0 to 4 defined as UBC, memory write-protected
...
0xFE: Pages 0 to 255 defined as UBC, memory write-protected
0xFF: Reserved
Note: Refer to the family reference manual (RM0016) section on
Flash/EEPROM write protection for more details.
AFR7Alternate function remapping option 7
0: Port D4 alternate function = TIM2_CH1
1: Port D4 alternate function = BEEP
AFR6 Alternate function remapping option 6
0: Port B5 alternate function = AIN5, port B4 alternate function = AIN4
1: Port B5 alternate function = I
2
C_SDA, port B4 alternate function =
I2C_SCL
AFR5 Alternate function remapping option 5
0: Port B3 alternate function = AIN3, port B2 alternate function = AIN2,
port B1 alternate function = AIN1, port B0 alternate function = AIN0
1: Port B3 alternate function = TIM1_ETR, port B2 alternate function =
TIM1_CH3N, port B1 alternate function = TIM1_CH2N, port B0 alternate
function = TIM1_CH1N
AFR4 Alternate function remapping option 4
Reserved
AFR3 Alternate function remapping option 3
0: Port D0 alternate function = TIM3_CH2
1: Port D0 alternate function = TIM1_BKIN
AFR2 Alternate function remapping option 2
0: Port D0 alternate function = TIM3_CH2
1: Port D0 alternate function = CLK_CCO
Note: AFR2 option has priority over AFR3 if both are activated
AFR1 Alternate function remapping option 1
0: Port A3 alternate function = TIM2_CH3, port D2 alternate function
TIM3_CH1
1: Port A3 alternate function = TIM3_CH1, port D2 alternate function
TIM2_CH3
AFR0 Alternate function remapping option 0
0: Port D3 alternate function = TIM2_CH2
1: Port D3 alternate function = ADC_ETR
Doc ID 022171 Rev 339/90
Option bytesSTM8S007C8
Table 12.Option byte description (continued)
Option byte no.Description
LSI_EN: Low speed internal clock enable
0: LSI clock is not available as CPU clock source
1: LSI clock is available as CPU clock source
IWDG_HW: Independentwatchdog
0: IWDG Independent watchdog activated by software
OPT3
OPT4
1: IWDG Independent watchdog activated by hardware
WWDG_HW: Windowwatchdog activation
0: WWDG window watchdog activated by software
1: WWDG window watchdog activated by hardware
WWDG_HALT: Windowwatchdog reset on halt
0: No reset generated on halt if WWDG active
1: Reset generated on halt if WWDG active
EXTCLK: External clock selection
0: External crystal connected to OSCIN/OSCOUT
1: External clock signal on OSCIN
CKAWUSEL:Auto wakeup unit/clock
0: LSI clock source selected for AWU
1: HSE clock with prescaler selected as clock source for for AWU
PRSC[1:0] AWU clock prescaler
00: 24 MHz to 128 kHz prescaler
01: 16 MHz to 128 kHz prescaler
10: 8 MHz to 128 kHz prescaler
11: 4 MHz to 128 kHz prescaler
HSECNT[7:0]:HSE crystal oscillator stabilization time
This option configures the number of wait states inserted when reading
from the Flash/data EEPROM memory.
1 wait state is required if f
0: No wait state
1: 1 wait state
> 16 MHz.
CPU
40/90Doc ID 022171 Rev 3
STM8S007C8Option bytes
Table 12.Option byte description (continued)
Option byte no.Description
BL[7:0] Bootloader option byte
For STM8S products, this option is checked by the boot ROM code
after reset. Depending on the content of addresses 0x487E, 0x487F,
and 0x8000 (reset vector), the CPU jumps to the bootloader or to
OPTBL
the reset vector. Refer to the UM0560 (STM8L/S bootloader manual)
for more details.
For STM8L products, the bootloader option bytes are on addresses
0xXXXX and 0xXXXX+1 (2 bytes). These option bytes control
whether the bootloader is active or not. For more details, refer to the
UM0560 (STM8L/S bootloader manual) for more details.
Doc ID 022171 Rev 341/90
Electrical characteristicsSTM8S007C8
V
DD
V
DDA
V
DDIO
V
SS
V
SSA
V
SSIO
A
5 V or 3.3 V
9 Electrical characteristics
9.1 Parameter conditions
Unless otherwise specified, all voltages are referred to VSS.
9.1.1 Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100 % of the devices with an ambient temperature at T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ± 3 Σ).
9.1.2 Typical values
= 25 °C and TA = T
A
Amax
(given by
Unless otherwise specified, typical data are based on TA = 25 °C, V
only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated
9.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
9.1.4 Typical current consumption
For typical current consumption measurements, VDD, V
together in the configuration shown in Figure 5.
Figure 5.Supply current measurement conditions
(mean ± 2 Σ).
DDIO
and V
= 5 V. They are given
DD
are connected
DDA
42/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
50 pF
STM8 pin
V
IN
STM8 pin
9.1.5 Pin loading conditions
9.1.6 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 6.
Figure 6.Pin loading conditions
9.1.7 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 7.
Figure 7.Pin input voltage
Doc ID 022171 Rev 343/90
Electrical characteristicsSTM8S007C8
9.2 Absolute maximum ratings
Stresses above those listed as ‘absolute maximum ratings’ may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 13.Voltage characteristics
SymbolRatingsMinMaxUnit
V
- VSSSupply voltage (including V
DDx
DDA and VDDIO
Input voltage on true open drain pins (PE1, PE2)
V
IN
|V
- VDD| Variations between different power pins50
DDx
- VSS| Variations between all the different ground pins50
|V
SSx
V
ESD
Input voltage on any other pin
Electrostatic discharge voltage
(2)
(1)
)
(2)
-0.36.5
V
- 0.36.5
SS
V
- 0.3V
SS
DD
V
+ 0.3
mV
see Absolute maximum
ratings (electrical
sensitivity) on page 80
1. All power (VDD, V
external power supply
2. I
must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
INJ(PIN)
cannot be respected, the injection current must be limited externally to the I
injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads,
there is no positive injection current, and the corresponding V
DDIO
, V
) and ground (VSS, V
DDA
SSIO
, V
) pins must always be connected to the
SSA
value. A positive
INJ(PIN)
maximum must always be respected
IN
44/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
Table 14.Current characteristics
60
60
200
100
160
80
±4
±20
(1)
Unit
mA
SymbolRatings Max.
I
VDD
I
VSS
Total current into V
Total current out of V
power lines (source)
DD
ground lines (sink)
SS
(2)
(2)
Output current sunk by any I/O and control pin20
I
IO
ΣI
IO
Output current source by any I/Os and control pin20
Total output current sourced (sum of all I/O and control pins)
for devices with two V
DDIO
Total output current sourced (sum of all I/O and control pins)
for devices with one V
DDIO
Total output current sunk (sum of all I/O and control pins) for
devices with two V
SSIO
pins
Total output current sunk (sum of all I/O and control pins) for
devices with one V
SSIO
pin
pins
pin
(3)
(3)
(3)
(3)
Injected current on NRST pin±4
(4)(5)
I
INJ(PIN)
ΣI
INJ(PIN)
1. Data based on characterization results, not tested in production.
2. All power (VDD, V
external supply.
3. I/O pins used simultaneously for high current source/sink must be uniformly spaced around the package
between the V
4. I
5. Negative injection disturbs the analog performance of the device. See note in Section 9.3.10: 10-bit ADC
6. When several inputs are submitted to a current injection, the maximum ΣI
must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
INJ(PIN)
cannot be respected, the injection current must be limited externally to the I
injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads,
there is no positive injection current, and the corresponding VIN maximum must always be respected
characteristics on page 76.
positive and negative injected currents (instantaneous values). These results are based on
characterization with
Injected current on OSCIN pin±4
SSIO
(6)
(6)
, V
) pins must always be connected to the
SSA
INJ(PIN)
INJ(PIN)
Injected current on any other pin
(4)
Total injected current (sum of all I/O and control pins)
, V
DDIO
DDIO/VSSIO
) and ground (VSS, V
DDA
pins.
Σ
I
maximum current injection on four I/O port pins of the device.
INJ(PIN)
value. A positive
is the absolute sum of the
Table 15.Thermal characteristics
SymbolRatings ValueUnit
T
STG
T
J
Storage temperature range-65 to 150
Maximum junction temperature150
Doc ID 022171 Rev 345/90
°C
Electrical characteristicsSTM8S007C8
9.3 Operating conditions
The device must be used in operating conditions that respect the parameters in Tab l e 1 6. In
addition, full account must be taken of all physical capacitor characteristics and tolerances.
Table 16.General operating conditions
SymbolParameter ConditionsMinMaxUnit
f
CPU
V
DD/VDD_IO
V
CAP
Internal CPU clock frequency
0 16MHz
Standard operating voltage2.955.5V
C
: capacitance of
EXT
external capacitor
(1)
ESR of external capacitor
At 1 MHz
(2)
4703300nF
0.3Ohm
ESL of external capacitor15nH
48-pin devices, with output
0 24MHz
D
T
A
T
1. Care should be taken when selecting the capacitor, due to its tolerance, as well as the parameter
dependency on temperature, DC bias and frequency in addition to other factors. The parameter
specifications must be respected for the full application range.
2. This frequency of 1 MHz as a condition for V
3. To calculate P
characteristics on page 84) with the value for T
Table 50: Thermal characteristics.
4. Refer to Section 10.2: Thermal characteristics on page 84 for the calculation method.
TA = 85° C for suffix 6
Ambient temperature for 6
suffix version
Junction temperature range-40105
J
), use the formula P
Dmax(TA
Power dissipation at
(3)
P
on 8 standard ports, 2 high
sink ports and 2 open drain
ports simultaneously
(4)
443mW
Maximum power dissipation -4085
parameters is given by the design of the internal regulator.
CAP
= (T
Dmax
- TA)/Θ
Jmax
given in Ta bl e 1 6 above and the value for Θ
Jmax
(see Section 10.2: Thermal
JA
given in
JA
°C
46/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
f
CP U
[MH z]
Supply voltage [V]
24
12
8
4
0
2.954.05.0
16
5. 5
Functionality not
guaranteed in
this area
MS19413V1
Functionality guaranteed
with 0 wait state
Functionality guaranteed
with 1 wait state
C
Rleak
ESRESL
Figure 8.f
Table 17.Operating conditions at power-up/power-down
CPUmax
versus VDD
SymbolParameterConditionsMinTyp
(1)
(1)
2.652.82.95V
2.582.732.88V
t
VDD
t
TEMP
V
IT+
V
VDD rise time rate2
fall time rate2
V
DD
Reset release
delay
rising1.7
V
DD
Power-on reset
threshold
IT-
Brown-out reset
threshold
MaxUnit
∞
µs/V
∞
(1)
ms
V
HYS(BOR)
1. Guaranteed by design, not tested in production.
Brown-out reset
hysteresis
9.3.1 VCAP external capacitor
Stabilization for the main regulator is achieved connecting an external capacitor C
V
pin. C
CAP
to less than 15 nH.
Figure 9.External capacitor C
1. Legend: ESR is the equivalent series resistance and ESL is the equivalent inductance.
is specified in Ta bl e 1 6 . Care should be taken to limit the series inductance
EXT
70mV
to the
EXT
EXT
Doc ID 022171 Rev 347/90
Electrical characteristicsSTM8S007C8
9.3.2 Supply current characteristics
The current consumption is measured as described in Figure 5 on page 42.
Total current consumption in run mode
The MCU is placed under the following conditions:
●All I/O pins in input mode with a static value at V
●All peripherals are disabled (clock stopped by Peripheral Clock Gating registers) except
if explicitly mentioned.
●When the MCU is clocked at 24 MHz, T
Subject to general operating conditions for V
Table 18.Total current consumption with code execution in run mode at VDD = 5 V
SymbolParameterConditionsTyp Max Unit
≤ 85 °C and the WAITSTATE option bit is set.
A
and TA.
DD
or VSS (no load)
DD
Supply
current in
f
f
CPU
CPU
= f
= f
MASTER
MASTER
= 24 MHz
= 16 MHz
run mode,
code
executed
from RAM
f
f
CPU
CPU
= f
= f
MASTER
MASTER
/128 = 125 kHz
/128 =
15.625 kHz
I
DD(RUN)
Supply
current in
f
f
CPU
CPU
CPU
= f
= f
= f
MASTER
MASTER
MASTER
= 128 kHzLSI RC osc. (128 kHz)0.45
= 24 MHz
= 16 MHz
f
run mode,
code
executed
from Flash
f
f
f
CPU
CPU
CPU
= f
= f
= f
MASTER
MASTER
MASTER
= 2 MHzHSI RC osc. (16 MHz/8)
/128 = 125 kHzHSI RC osc. (16 MHz)1.1
/128 =
15.625 kHz
= f
f
CPU
MASTER
1. Data based on characterization results, not tested in production.
2. Default clock configuration measured with all peripherals off.
= 128 kHzLSI RC osc. (128 kHz)0.55
HSE crystal osc. (24 MHz)4.4
HSE user ext. clock (24 MHz)3.77.3
HSE crystal osc. (16 MHz)3.3
HSE user ext. clock (16 MHz)2.75.8
HSI RC osc. (16 MHz)2.53.4
HSE user ext. clock (16 MHz)1.24.1
HSI RC osc. (16 MHz)1.01.3
HSI RC osc. (16 MHz/8)0.55
HSE crystal osc. (24 MHz)11.4
HSE user ext. clock (24 MHz)10.818
HSE crystal osc. (16 MHz)9.0
HSE user ext. clock (16 MHz)8.215.2
HSI RC osc.(16 MHz)8.113.2
(2)
1.5
HSI RC osc. (16 MHz/8)0.6
(1)
(1)
(1)
mA
(1)
(1)
(1)
48/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
Table 19.Total current consumption with code execution in run mode at VDD = 3.3 V
SymbolParameterConditionsTypMax
(1)
Unit
Supply
current in
f
f
CPU
CPU
= f
= f
MASTER
MASTER
= 24 MHz
= 16 MHz
run mode,
code
executed
from RAM
f
f
CPU
CPU
= f
= f
MASTER
MASTER
/128 = 125 kHz
/128 =
15.625 kHz
I
DD(RUN)
Supply
current in
f
f
f
CPU
CPU
CPU
= f
= f
= f
MASTER
MASTER
MASTER
= 128 kHzLSI RC osc. (128 kHz)0.45
= 24 MHz
= 16 MHz
run mode,
code
executed
from Flash
f
f
f
CPU
CPU
CPU
= f
= f
= f
MASTER
MASTER
MASTER
= 2 MHzHSI RC osc. (16 MHz/8)
/128 = 125 kHzHSI RC osc. (16 MHz)1.1
/128 =
15.625 kHz
= f
f
CPU
MASTER
1. Data based on characterization results, not tested in production.
2. Default clock configuration.
= 128 kHzLSI RC osc. (128 kHz)0.55
HSE crystal osc. (24 MHz)4.0
HSE user ext. clock (24 MHz)3.77.3
HSE crystal osc. (16 MHz)2.9
HSE user ext. clock (16 MHz)2.75.8
HSI RC osc. (16 MHz)2.53.4
HSE user ext. clock (16 MHz)1.24.1
HSI RC osc. (16 MHz)1.01.3
HSI RC osc. (16MHz/8)0.55
HSE crystal osc. (24 MHz)11.0
HSE user ext. clock (24 MHz)10.818.0
HSE crystal osc. (16 MHz)8.4
HSE user ext. clock (16 MHz)8.215.2
HSI RC osc. (16 MHz)8.113.2
(2)
1.5
HSI RC osc. (16 MHz/8)0.6
mA
Doc ID 022171 Rev 349/90
Electrical characteristicsSTM8S007C8
Total current consumption in wait mode
Table 20.Total current consumption in wait mode at VDD = 5 V
SymbolParameterConditionsTypMax
(1)
Unit
f
CPU
= f
MASTER
= 24 MHz
HSE user ext. clock (24 MHz)1.84.7
HSE crystal osc. (16 MHz)2.0
HSE crystal osc. (24 MHz)2.4
f
I
DD(WFI)
Supply
current in
CPU
= f
MASTER
= 16 MHz
HSE user ext. clock (16 MHz)1.44.4
HSI RC osc. (16 MHz)1.21.6
wait mode
f
= f
CPU
= f
f
CPU
15.625 kHz
f
= f
CPU
1. Data based on characterization results, not tested in production.
2. Default clock configuration measured with all peripherals off.
Table 21.Total current consumption in wait mode at VDD = 3.3 V
/128 = 125 kHzHSI RC osc. (16 MHz)1.0
MASTER
/128 =
MASTER
= 128 kHzLSI RC osc. (128 kHz)0.5
MASTER
HSI RC osc. (16 MHz/8)
(2)
0.55
SymbolParameterConditionsTypMax
HSE crystal osc. (24 MHz)2.0
f
CPU
= f
MASTER
= 24 MHz
HSE user ext. clock (24 MHz)1.84.7
HSE crystal osc. (16 MHz)1.6
f
I
DD(WFI)
Supply
current in
wait mode
= f
CPU
MASTER
f
= f
CPU
MASTER
= f
f
CPU
MASTER
15.625 kHz
= 16 MHz
HSE user ext. clock (16 MHz)1.44.4
HSI RC osc. (16 MHz)1.21.6
/128 = 125 kHzHSI RC osc. (16 MHz)1.0
/128 =
HSI RC osc. (16 MHz/8)
(2)
0.55
(1)
mA
Unit
mA
f
= f
CPU
MASTER
15.625 kHz
1. Data based on characterization results, not tested in production.
2. Default clock configuration measured with all peripherals off.
/128 =
LSI RC osc. (128 kHz)0.5
50/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
Total current consumption in active halt mode
Table 22.Total current consumption in active halt mode at VDD = 5 V, TA -40 to 85° C
Conditions
SymbolParameter
Main voltage
regulator
(2)
(MVR)
Flash mode
(3)
Clock source
HSE crystal oscillator
(16 MHz)
Operating mode
LSI RC oscillator
(128 kHz)
On
I
DD(AH)
Supply current in
active halt mode
Powerdown mode
HSE crystal oscillator
(16 MHz)
LSI RC oscillator
(128 kHz)
Off
Operating mode
Powerdown mode1145
1. Data based on characterization results, not tested in production.
2. Configured by the REGAH bit in the CLK_ICKR register.
3. Configured by the AHALT bit in the FLASH_CR1 register.
Table 23.Total current consumption in active halt mode at VDD = 3.3 V
LSI RC oscillator
128 kHz)
Conditions
SymbolParameter
Main voltage
regulator
(2)
(MVR)
Flash mode
(3)
Clock source
TypMax
1000
200260
940
140
68
Typ
(1)
(1)
Unit
µA
Unit
Operating mode
On
I
DD(AH)
Supply current in
active halt mode
Powerdown mode
Operating mode
Off
Powerdown mode9
1. Data based on characterization results, not tested in production.
2. Configured by the REGAH bit in the CLK_ICKR register.
3. Configured by the AHALT bit in the FLASH_CR1 register.
Doc ID 022171 Rev 351/90
HSE crystal osc. (16 MHz)600
LSI RC osc. (128 kHz)200
HSE crystal osc. (16 MHz)540
µA
LSI RC osc. (128 kHz)140
66
LSI RC osc. (128 kHz)
Electrical characteristicsSTM8S007C8
Total current consumption in halt mode
Table 24.Total current consumption in halt mode at VDD = 5 V, TA -40 to 85° C
SymbolParameterConditionsTypMaxUnit
Flash in operating mode, HSI
clock after wakeup
I
DD(H)
Supply current in halt mode
Flash in powerdown mode, HSI
clock after wakeup
Table 25.Total current consumption in halt mode at VDD = 3.3 V
63.5
6.535
SymbolParameterConditionsTypUnit
I
DD(H)
Flash in operating mode, HSI clock after
wakeup
Supply current in halt mode
Flash in powerdown mode, HSI clock after
wakeup
61.5
4.5
Low power mode wakeup times
Table 26.Wakeup times
SymbolParameterConditionsTypMax
t
WU(WFI)
t
WU(AH)
t
WU(H)
Wakeup time from wait
mode to run mode
Wakeup time active halt
mode to run mode.
Wakeup time from halt
mode to run mode
(3)
(3)
(3)
= f
f
CPU
MASTER
MVR voltage
regulator on
MVR voltage
regulator off
Flash in operating mode
= 16 MHz. 0.56
Flash in operating
(5)
mode
(4)
Flash in powerdown
(5)
mode
Flash in operating
(5)
mode
(4)
Flash in powerdown
(5)
mode
(5)
Flash in powerdown mode
(5)
HSI (after
wakeup)
48
50
1
3
52
54
(6)
(6)
(6)
(6)
See
note
2
(1)
(2)
(6)
µA
µA
Unit
µs
1. Data guaranteed by design, not tested in production.
WU(WFI)
= 2 x 1/f
2. t
3. Measured from interrupt event to interrupt vector fetch.
4. Configured by the REGAH bit in the CLK_ICKR register.
5. Configured by the AHALT bit in the FLASH_CR1 register.
6. Plus 1 LSI clock depending on synchronization.
master
+ 7 x 1/f
CPU
52/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
Total current consumption and timing in forced reset state
Table 27.Total current consumption and timing in forced reset state
SymbolParameterConditionsTypMax
I
DD(R)
t
RESETBL
1. Data guaranteed by design, not tested in production.
Supply current in reset state
Reset release to bootloader vector
fetch
V
= 5 V1.6
DD
= 3.3 V0.8
V
DD
(1)
Unit
mA
150µs
Current consumption of on-chip peripherals
Subject to general operating conditions for VDD and TA.
HSI internal RC/f
Table 28.Peripheral current consumption
CPU
= f
MASTER
= 16 MHz.
SymbolParameterTyp.Unit
(2)
(2)
(1)
(1)
(2)
(2)
(1)
(1)
(3)
220
120
100
25
90
110
40
50
1000
µA
I
DD(TIM1)
I
DD(TIM2)
I
DD(TIM3)
I
DD(TIM4)
I
DD(UART1)
I
DD(UART3)
I
DD(SPI)
I
DD(I2C)
I
DD(ADC2)
1. Data based on a differential IDD measurement between reset configuration and timer counter running at
16 MHz. No IC/OC programmed (no I/O pads toggling). Not tested in production.
2. Data based on a differential IDD measurement between the on-chip peripheral when kept under reset and
not clocked and the on-chip peripheral when clocked and not kept under reset. No I/O pads toggling. Not
tested in production.
3. Data based on a differential IDD measurement between reset configuration and continuous A/D
conversions. Not tested in production.
TIM1 supply current
TIM2 supply current
TIM3 timer supply current
TIM4 timer supply current
UART1 supply current
UART3 supply current
SPI supply current
I2C supply current
ADC2 supply current when converting
Doc ID 022171 Rev 353/90
Electrical characteristicsSTM8S007C8
0
0.5
1
1.5
2
2.5
2.533.544.555.56
DD(WFI)HSI
DD
ai18797
Current consumption curves
Figure 10 and Figure 11 show typical current consumption measured with code executing in
RAM.
Figure 10. Typ. I
[mA]
I
Figure 11. Typ. I
DD(RUN)
4
3.5
3
2.5
2
1.5
DD(RUN)HSI
1
0.5
0
DD(WFI)
vs VDD, HSI RC osc, f
2.533.544.555.56
vs VDD, HSI RC osc, f
V
DD
= 16 MHz
CPU
[V]
= 16 MHz
CPU
25°C
85°C
ai18796
[mA]
I
V
54/90Doc ID 022171 Rev 3
25°C
85°C
[V]
STM8S007C8Electrical characteristics
OSCIN
f
HSE
External clock
STM8
source
V
HSEL
V
HSEH
9.3.3 External clock sources and timing characteristics
HSE user external clock
Subject to general operating conditions for VDD and TA.
Table 29.HSE user external clock characteristics
SymbolParameterConditionsMinTypMaxUnit
f
HSE_ext
V
HSEH
V
HSEL
I
LEAK_HSE
1. Data based on characterization results, not tested in production.
User external clock source
frequency
OSCIN input pin high level
(1)
voltage
OSCIN input pin low level
(1)
voltage
OSCIN input leakage
current
< V
V
SS
IN
< V
DD
Figure 12. HSE external clock source
024MHz
V
0.7 x V
DD
DD
+ 0.3 V
V
V
SS
0.3 x V
DD
-11µA
HSE crystal/ceramic resonator oscillator
The HSE clock can be supplied with a 1 to 24 MHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and start-up stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
Doc ID 022171 Rev 355/90
Electrical characteristicsSTM8S007C8
OSCOUT
OSCIN
f
HSE
to core
C
L1
C
L2
R
F
STM8
Resonator
Consumption
control
g
m
R
m
C
m
L
m
C
O
Resonator
g
mcrit
2 Π×f
HSE
×()
2
Rm×2Co C+()
2
=
Table 30.HSE oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
f
HSE
R
C
I
DD(HSE)
g
t
SU(HSE)
1. C is approximately equivalent to 2 x crystal Cload.
2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with small R
Refer to crystal manufacturer for more details
3. Data based on characterization results, not tested in production.
4. t
SU(HSE)
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
External high speed oscillator
frequency
Feedback resistor220kΩ
F
(1)
Recommended load capacitance
(2)
C = 20 pF,
f
= 24 MHz
HSE oscillator power consumption
OSC
C = 10 pF,
= 24 MHz
f
OSC
Oscillator transconductance5mA/V
m
(4)
Startup time VDD is stabilized1ms
is the start-up time measured from the moment it is enabled (by software) to a stabilized 24 MHz oscillation is
124MHz
20pF
6 (startup)
2 (stabilized)
6 (startup)
1.5 (stabilized)
(3)
value.
m
(3)
Figure 13. HSE oscillator circuit diagram
mA
HSE oscillator critical g
: Notional resistance (see crystal specification)
R
m
L
: Notional inductance (see crystal specification)
m
C
: Notional capacitance (see crystal specification)
m
formula
m
Co: Shunt capacitance (see crystal specification)
C
L1=CL2
g
m
56/90Doc ID 022171 Rev 3
=C: Grounded external capacitance
>> g
mcrit
STM8S007C8Electrical characteristics
-3%
-2%
-1%
0%
1%
2%
3%
2.533.544.555.56
DD
ai15067b
9.3.4 Internal clock sources and timing characteristics
Subject to general operating conditions for VDD and TA. f
HSE
High speed internal RC oscillator (HSI)
Table 31.HSI oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
f
ACC
t
su(HSI)
I
DD(HSI)
1. Guaranteeed by design, not tested in production.
2. Data based on characterization results, not tested in production
Frequency 16MHz
HSI
Tr i m m e d by th e
Accuracy of HSI oscillator
CLK_HSITRIMR register
for given V
and TA
DD
-1.0
(1)
1.0
conditions
HSI
VDD = 5 V, TA = 25 °C5
Accuracy of HSI oscillator
V
= 5 V,
(factory calibrated)
HSI oscillator wakeup
time including calibration
HSI oscillator power
consumption
DD
-40 °C ≤ TA ≤ 85 °C
-55
1.0
170250
(1)
(2)
%
µs
µA
Figure 14. Typical HSI frequency variation vs VDD at 3 temperatures
% accuracy
V
[V]
-40°C
25°C
85°C
Doc ID 022171 Rev 357/90
Electrical characteristicsSTM8S007C8
ai15070
-3%
-2%
-1%
0%
1%
2%
3%
2.533.544.555.56
V
DD
[V]
% accuracy
Low speed internal RC oscillator (LSI)
Subject to general operating conditions for VDD and TA.
Table 32.LSI oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
f
t
su(LSI)
I
DD(LSI)
Frequency 128kHz
LSI
LSI oscillator wakeup time 7
LSI oscillator power consumption5µA
1. Guaranteeed by design, not tested in production.
Figure 15. Typical LSI frequency variation vs VDD @ 25 °C
(1)
µs
58/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
9.3.5 Memory characteristics
RAM and hardware registers
Table 33.RAM and hardware registers
SymbolParameter ConditionsMinUnit
V
RM
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
2. Refer to Table 17 on page 47 for the value of V
Data retention mode
(1)
IT-max
Halt mode (or reset)V
.
Flash program memory/data EEPROM memory
General conditions: TA = -40 to 85 °C.
Table 34.Flash program memory/data EEPROM memory
SymbolParameter ConditionsMin
(1)
IT-max
(2)
V
TypMaxUnit
V
t
prog
t
erase
N
t
RET
I
DD
Operating voltage
DD
(all modes, execution/write/erase)
f
≤ 16 MHz2.955.5V
CPU
Standard programming time
(including erase) for byte/word/block
6.06.6ms
(1 byte/4 bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
3.03.3ms
Erase time for 1 block (128 bytes)3.03.3ms
Erase/write cycles
(program memory)
RW
Erase/write cycles
(data memory)
(2)
(2)
100
TA = 85 °C
100 k
Data retention (program memory)
after 100 erase/write cycles at
T
= 85 °C
A
10 k erase/write cycles at TA = 85 °C
Data retention (data memory) after
100 k erase/write cycles at T
= 85 °C
A
Supply current (Flash programming or
erasing for 1 to 128 bytes)
T
= 55° C
RET
= 85° C1
T
RET
20
20
2.0mA
cycles
yearsData retention (data memory) after
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
Doc ID 022171 Rev 359/90
Electrical characteristicsSTM8S007C8
9.3.6 I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 35.I/O static characteristics
SymbolParameterConditionsMinTypMaxUnit
V
IL
V
IH
V
hys
R
pu
tR, t
F
I
lkg
I
lkg ana
I
lkg(inj)
Input low level
voltage
Input high level
= 5 V
V
DD
voltage
Hysteresis
(1)
Pull-up resistorVDD = 5 V, V
Fast I/Os
Rise and fall time
(10% - 90%)
Load = 50 pF
Standard and high sink I/Os
Load = 50 pF
Input leakage
current,
≤ VIN≤ V
V
SS
analog and digital
Analog input
leakage current
Leakage current in
adjacent I/O
≤ VIN≤ V
V
SS
Injection current ±4 mA±1
IN
= V
DD
DD
SS
-0.30.3 x V
0.7 x V
DD
VDD + 0.3 VV
DD
700mV
3055 80kΩ
(2)
20
(2)
ns
125
±1 µA
(3)
±250
(3)
V
ns
nA
µA
1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2. Guaranteed by design.
3. Data based on characterization results, not tested in production.
60/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
0
1
2
3
4
5
6
2.533.544.555.56
IL
IH
DD
ai18798
30
35
45
50
55
60
2.533.544.555.56
ull-Up resistance [
Ω
DD
ai18799
Figure 16. Typical VIL and VIH vs VDD @ 3 temperatures
C
-40°
25°C
85°C
[V]
/ V
V
V
[V]
Figure 17. Typical pull-up resistance vs V
@ 3 temperatures
DD
-40°C
25°C
85°C
]
k
P
V
[V]
Doc ID 022171 Rev 361/90
Electrical characteristicsSTM8S007C8
ai15068b
0
20
40
60
80
100
120
140
0123456
DD
Figure 18. Typical pull-up current vs VDD @ 3 temperatures
-40°C
25°C
Pull- Up current [μA]
1. The pull-up is a pure resistor (slope goes through 0).
Table 36.Output driving current (standard ports)
V
[V]
85°C
SymbolParameterConditionsMinMaxUnit
V
OL
Output low level with 4 pins sunkI
Output high level with 8 pins sourcedIIO = 10 mA, V
V
OH
Output high level with 4 pins sourcedI
1. Data based on characterization results, not tested in production
Output low level with 8 pins sunkI
Table 37.Output driving current (true open drain ports)
= 10 mA, V
IO
= 4 mA, V
IO
= 4 mA, V
IO
= 5 V2
DD
= 3.3 V1
DD
= 5 V2.8
DD
= 3.3 V2.1
DD
(1)
(1)
SymbolParameterConditionsMaxUnit
I
= 10 mA, V
IO
V
Output low level with 2 pins sunk
OL
= 10 mA, V
IO
IIO = 20 mA, V
1. Data based on characterization results, not tested in production
= 5 V1
DD
= 3.3 V1.5
DD
= 5 V2
DD
(1)
(1)
VI
V
V
62/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
0
0.25
0.5
0.75
1
1.25
1.5
024681012
OL
MS19400V1
Table 38.Output driving current (high sink ports)
SymbolParameterConditionsMinMaxUnit
Output low level with 8 pins sunkIIO = 10 mA,V
V
Output low level with 4 pins sunkI
OL
= 10 mA,V
IO
Output low level with 4 pins sunkIIO = 20 mA,V
Output high level with 8 pins sourcedIIO = 10 mA, V
V
Output high level with 4 pins sourcedI
OH
= 10 mA, V
IO
Output high level with 4 pins sourcedIIO = 20 mA, V
1. Data based on characterization results, not tested in production
= 5 V0.8
DD
= 3.3 V1
DD
= 5 V1.5
DD
= 5 V4.0
DD
= 3.3 V2.1
DD
= 5 V3.3
DD
(1)
(1)
(1)
(1)
Typical output level curves
Figure 20 to Figure 27 show typical output level curves measured with output on a single
Subject to general operating conditions for VDD and TA unless otherwise specified.
Table 39.NRST pin characteristics
SymbolParameterConditionsMinTyp
V
IL(NRST)
IH(NRST)
V
OL(NRST)
R
PU(NRST)
t
IFP(NRST)
t
INFP(NRST)
t
OP(NRST)
1. Data based on characterization results, not tested in production.
2. The R
3. Data guaranteed by design, not tested in production.
(2)
(3)
(1)
(3)
(1)
(1)
IOL= 2 mA0.5
NRST Input low level voltage
NRST Input high level voltage
NRST Output low level voltage
NRST Pull-up resistor
NRST Input filtered pulse
NRST Input not filtered pulse
NRST output pulse
pull-up equivalent resistor is based on a resistive transistor
PU
(1)
-0.3 V0.3 x V
0.7 x V
DD
305580kΩ
500ns
15µs
MS19409V1
1)
VDD + 0.3
MaxUnit
DD
VV
75ns
68/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
MS19410V1
0
1
2
3
4
5
6
2.533.544.555.56
IL
IH
DD
30
35
40
45
50
55
60
2.533.544.555.56
ESET Pull-Up resistance [
DD
MS19411V1
Figure 29. Typical NRST VIL and VIH vs VDD @ 3 temperatures
-40°C
25°C
85°C
[V]
/ V
V
V
[V]
Figure 30.Typical NRST pull-up resistance vs V
@ 3 temperatures
DD
-40°C
25°C
]
k
NR
V
[V]
85°C
Doc ID 022171 Rev 369/90
Electrical characteristicsSTM8S007C8
ai15069b
0
20
40
60
80
100
120
140
0123456
DD
NRESET Pull-Up current [μA]
0.1µF
External
reset
circuit
STM8
Filter
R
PU
V
DD
Internal reset
NRST
(optional)
Figure 31. Typical NRST pull-up current vs VDD @ 3 temperatures
-40°C
25°C
85°C
V
[V]
The reset network shown in Figure 32 protects the device against parasitic resets. The user
must ensure that the level on the NRST pin can go below the V
max. level specified in
IL
Ta bl e 3 5 . Otherwise the reset is not taken into account internally. For power consumption
sensitive applications, the capacity of the external reset capacitor can be reduced to limit
charge/discharge current. If the NRST signal is used to reset the external circuitry, care
must be taken of the charge/discharge time of the external capacitor to fulfill the external
device’s reset timing conditions. The minimum recommended capacity is 10 nF.
Figure 32. Recommended reset pin protection
70/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
9.3.8
SPI serial peripheral interface
Unless otherwise specified, the parameters given in Ta b le 4 0 are derived from tests
performed under ambient temperature, f
conditions. t
MASTER
= 1/f
MASTER
.
MASTER
frequency and VDD supply voltage
Refer to I/O port characteristics for more details on the input/output alternate function
characteristics (NSS, SCK, MOSI, MISO).
Table 40.SPI characteristics
SymbolParameterConditionsMinMaxUnit
f
SCK
1/t
c(SCK)
t
r(SCK)
t
f(SCK)
t
su(NSS)
t
h(NSS)
t
w(SCKH)
t
w(SCKL)
t
su(MI)
t
su(SI)
t
h(MI)
t
h(SI)
t
a(SO)
t
dis(SO)
t
v(SO)
t
v(MO)
t
h(SO)
t
h(MO)
1. Values based on design simulation and/or characterization results, and not tested in production.
2. Min time is for the minimum time to drive the output and the max time is for the maximum time to validate the data.
3. Min time is for the minimum time to invalidate the output and the max time is for the maximum time to put the data in Hi-Z.
Master mode 010
SPI clock frequency
Slave mode06
SPI clock rise and fall timeCapacitive load: C = 30 pF25
(1)
NSS setup time Slave mode4 x t
(1)
NSS hold timeSlave mode70
(1)
SCK high and low timeMaster modet
(1)
(1)
Data input setup time
(1)
(1)
Data input hold time
(1)
(1)(2)
Data output access timeSlave mode 3 x t
(1)(3)
Data output disable timeSlave mode25
(1)
Data output valid timeSlave mode (after enable edge)75
(1)
Data output valid timeMaster mode (after enable edge)30
1. Measurement points are done at CMOS levels: 0.3 V
and 0.7 V
DD
DD.
(1)
72/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
ai14136V2
SCK Output
CPHA=0
MOSI
OUTPUT
MISO
INP U T
CPHA=0
MSBIN
M SB OUT
BIT6 IN
LSB OUT
LSB IN
CPOL=0
CPOL=1
B I T1 OUT
NSS input
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
r(SCK)
t
f(SCK)
t
h(MI)
High
SCK Output
CPHA=1
CPHA=1
CPOL=0
CPOL=1
t
su(MI)
t
v(MO)
t
h(MO)
Figure 35. SPI timing diagram - master mode
(1)
1. Measurement points are done at CMOS levels: 0.3 V
and 0.7 V
DD
DD.
Doc ID 022171 Rev 373/90
Electrical characteristicsSTM8S007C8
9.3.9 I2C interface characteristics
Table 41.I2C characteristics
SymbolParameter
Standard mode I
(2)
Min
Max
2
C Fast mode I2C
(2)
Min
(2)
Max
(1)
(2)
Unit
t
w(SCLL)
t
w(SCLH)
t
su(SDA)
t
h(SDA)
t
r(SDA)
t
r(SCL)
t
f(SDA)
t
f(SCL)
t
h(STA)
t
su(STA)
t
su(STO)
t
w(STO:STA)
C
1. f
MASTER
Data based on standard I
2.
The maximum hold time of the start condition has only to be met if the interface does not stretch the low
3.
time
The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the
4.
undefined region of the falling edge of SCL
SCL clock low time4.71.3
SCL clock high time4.00.6
SDA setup time250100
SDA data hold time0
(3)
(4)
0
SDA and SCL rise time1000300
SDA and SCL fall time300300
START condition hold time4.00.6
Repeated START condition setup time4.70.6
STOP condition setup time4.00.6 µs
STOP to START condition time
(bus free)
Capacitive load for each bus line400400pF
b
, must be at least 8 MHz to achieve max fast I2C speed (400kHz)
2
C protocol requirement, not tested in production
4.71.3µs
900
µs
(3)
ns
µs
74/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
ai17490
START
SD A
I²C bus
V
DD
V
DD
STM8S20xxx
SDA
SCL
t
f(SDA)
t
r(SDA)
SCL
t
h(STA)
t
w(SCLH)
t
w(SCLL)
t
su(SDA)
t
r(SCL)
t
f(SCL)
t
h(SDA)
S TART REPEATED
START
t
su(STA)
t
su(STO)
STOP
t
su(STA:STO)
2
Figure 36.
Typical application with I
C bus and timing diagram
1. Measurement points are made at CMOS levels: 0.3 x VDD and 0.7 x V
DD
Doc ID 022171 Rev 375/90
Electrical characteristicsSTM8S007C8
9.3.10 10-bit ADC characteristics
Subject to general operating conditions for V
DDA
, f
MASTER
, and TA unless otherwise
specified.
Table 42.ADC characteristics
SymbolParameter ConditionsMinTyp MaxUnit
V
f
ADC clock frequency
ADC
V
V
V
V
V
C
t
t
STAB
t
CONV
1. Data guaranteed by design, not tested in production..
2. During the sample time the input capacitance C
Analog supply35.5V
DDA
Positive reference voltage2.75
REF+
Negative reference voltageV
REF-
Conversion voltage range
AIN
Internal sample and hold
ADC
capacitor
(2)
Sampling time
S
(2)
Wakeup time from standby7µs
Total conversion time (including
sampling time, 10-bit resolution)
source. The internal resistance of the analog source must allow the capacitance to reach its final voltage
level within t
the conversion result. Values for the sample clock tS depend on programming.
After the end of the sample time tS, changes of the analog input voltage have no effect on
S.
AIN
3 to 5.5 V14
DDA =
MHz
4.5 to 5.5 V16
DDA =
V
(1)
SSA
SSA
V
0.5
V
DDA
(1)
DDA
3pF
f
= 4 MHz0.75
ADC
= 6 MHz0.5
f
ADC
= 4 MHz3.5µs
f
ADC
= 6 MHz2.33µs
f
ADC
141/f
(3 pF max) can be charged/discharged by the external
V
V
V
µs
ADC
76/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
Table 43.ADC accuracy with R
SymbolParameter ConditionsTypMaxUnit
|ET|Total unadjusted error
|EO|Offset error
|EG|Gain error
(1)
(1)
|ED|Differential linearity error
|E
|Integral linearity error
L
1. ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins
should be avoided as this significantly reduces the accuracy of the conversion being performed on another
analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may
potentially inject negative current. Any positive injection current within the limits specified for I
ΣI
in Section 9.3.6 does not affect the ADC accuracy.
INJ(PIN)
(1)
(1)
AIN
(1)
< 10 kΩ , V
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
= 5 V
DDA
= 2 MHz12.5
= 4 MHz1.43
= 6 MHz1.63.5
= 2 MHz0.62
= 4 MHz1.12.5
= 6 MHz1.22.5
= 2 MHz0.22
= 4 MHz0.62.5
= 6 MHz0.82.5
= 2 MHz0.71.5
= 4 MHz0.71.5
= 6 MHz0.81.5
= 2 MHz0.61.5
= 4 MHz0.61.5
= 6 MHz0.61.5
INJ(PIN)
LSB
and
Table 44.ADC accuracy with R
< 10 kΩ R
AIN
AIN
, V
DDA
= 3.3 V
SymbolParameter ConditionsTypMaxUnit
f
= 2 MHz1.12
|E
|Total unadjusted error
T
|E
|Offset error
O
|E
|Gain error
G
(1)
(1)
(1)
|ED|Differential linearity error
|E
|Integral linearity error
L
(1)
(1)
ADC
= 4 MHz1.62.5
f
ADC
f
= 2 MHz0.71.5
ADC
f
= 4 MHz1.32
ADC
f
= 2 MHz0.21.5
ADC
= 4 MHz0.52
f
ADC
f
= 2 MHz0.71
ADC
= 4 MHz0.71
f
ADC
f
= 2 MHz0.61.5
ADC
= 4 MHz0.61.5
f
ADC
LSB
Doc ID 022171 Rev 377/90
Electrical characteristicsSTM8S007C8
E
O
E
G
1LSB
IDEAL
1LSB
IDEAL
V
DDAVSSA
–
1024
----------------------------- ------------=
1023
1022
1021
5
4
3
2
1
0
7
6
1234567
1021102210231024
(1)
(2)
E
T
E
D
E
L
(3)
V
DDA
V
SSA
AINx
STM8
V
DD
I
L
±1µA
V
T
0.6V
V
T
0.6V
C
ADC
V
AIN
R
AIN
10-bit A/D
conversion
C
AIN
Figure 37. ADC accuracy characteristics
1. Example of an actual transfer curve.
2. The ideal transfer curve
3. End point correlation line
= Total unadjusted error: maximum deviation between the actual and the ideal transfer curves.
E
T
E
= Offset error: deviation between the first actual transition and the first ideal one.
O
EG = Gain error: deviation between the last ideal transition and the last actual one.
ED = Differential linearity error: maximum deviation between actual steps and the ideal one.
E
= Integral linearity error: maximum deviation between any actual transition and the end point correlation
L
line.
Figure 38. Typical application with ADC
78/90Doc ID 022171 Rev 3
STM8S007C8Electrical characteristics
9.3.11 EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
●ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
●FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
and VSS
DD
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●Corrupted program counter
●Unexpected reset
●Critical data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 45.EMS data
SymbolParameterConditionsLevel/class
= 5 V, TA= 25 °C,
V
V
V
Voltage limits to be applied on any I/O pin to
FESD
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100pF on VDD and V
EFTB
to induce a functional disturbance
SS
pins
DD
f
MASTER
conforming to IEC 61000-4-2
VDD= 5 V, TA= 25 °C,
f
MASTER
conforming to IEC 61000-4-4
= 16 MHz,
= 16 MHz,
2B
4A
Doc ID 022171 Rev 379/90
Electrical characteristicsSTM8S007C8
Electromagnetic interference (EMI)
Emission tests conform to the SAE IEC 61967-2 standard for test software, board layout and
pin loading.
Table 46.EMI data
Conditions
SymbolParameter
General conditions
frequency band
0.1MHz to 30 MHz141324
V
= 5 V
Peak level
S
EMI
SAE EMI
level
1. Data based on characterization results, not tested in production.
DD
TA = 25 °C
LQFP48 package
conforming to SAE IEC
61967-2
130 MHz to 1 GHz-4-47
SAE EMI level1.522.5
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 47.ESD absolute maximum ratings
Monitored
Max f
16 MHz/
8 MHz
HSE/fCPU
16 MHz/
16 MHz
(1)
Unit
24 MHz/
24 MHz
dBµV30 MHz to 130 MHz192317
SymbolRatingsConditionsClass
V
ESD(HBM)
V
ESD(CDM)
1. Data based on characterization results, not tested in production.
Electrostatic discharge voltage
(Human body model)
Electrostatic discharge voltage
(Charge device model)
TA = 25°C, conforming to
JESD22-A114
TA= 25°C, conforming to
JESD22-C101
80/90Doc ID 022171 Rev 3
Maximum
value
(1)
Unit
A2000V
IV1000V
STM8S007C8Electrical characteristics
Static latch-up
Two complementary static tests are required on 10 parts to assess the latch-up
performance:
●A supply overvoltage (applied to each power supply pin)
●A current injection (applied to each input, output and configurable I/O pin) is performed
on each sample.
This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the
application note AN1181.
Table 48.Electrical sensitivities
SymbolParameterConditionsClass
(1)
LUStatic latch-up class
TA = 25 °CA
= 85 °CA
T
A
1. Class description: A Class is an STMicroelectronics internal specification. All its limits are higher than the
JEDEC specifications, that means when a device belongs to class A it exceeds the JEDEC standard. B
class strictly covers all the JEDEC criteria (international standard).
Doc ID 022171 Rev 381/90
Package characteristicsSTM8S007C8
10 Package characteristics
To meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at www.st.com.
ECOPACK® is an ST trademark.
Table 49.48-pin low profile quad flat package mechanical data
mminches
(1)
Symbol
MinTypMaxMinTypMax
A 1.600 0.0630
A1 0.050 0.150 0.0020 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 0.200 0.0035 0.0079
D 8.800 9.000 9.200 0.3465 0.3543 0.3622
D1 6.800 7.000 7.200 0.2677 0.2756 0.2835
D3 5.500 0.2165
E 8.800 9.000 9.200 0.3465 0.3543 0.3622
E1 6.800 7.000 7.200 0.2677 0.2756 0.2835
E3 5.500 0.2165
e 0.500 0.0197
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
Doc ID 022171 Rev 383/90
L1 1.000 0.0394
k 0.0° 3.5° 7.0° 0.0° 3.5° 7.0°
ccc 0.080 0.0031
1. Values in inches are converted from mm and rounded to four decimal places.
Package characteristicsSTM8S007C8
10.2 Thermal characteristics
The maximum chip junction temperature (T
) must never exceed the values given in
Jmax
Table 16: General operating conditions.
The maximum chip-junction temperature, T
, in degrees Celsius, may be calculated
Jmax
using the following equation:
T
Jmax
= T
Amax
+ (P
Dmax
x ΘJA)
Where:
●T
●Θ
●P
●P
is the maximum ambient temperature in °C
Amax
is the package junction-to-ambient thermal resistance in ° C/W
JA
is the sum of P
Dmax
is the product of I
INTmax
INTmax
DD
and P
I/Omax (PDmax
= P
INTmax
+ P
and VDD, expressed in Watts. This is the maximum chip
I/Omax
)
internal power.
●P
P
VOH/I
Table 50.Thermal characteristics
SymbolParameterValueUnit
1. Thermal resistances are based on JEDEC JESD51-2 with 4-layer PCB in a natural convection
environment.
represents the maximum power dissipation on output pins, where:
I/Omax
I/Omax =
Θ
JA
Σ (VOL*IOL) + Σ((VDD-V
of the I/Os at low and high level in the application.
OH
Thermal resistance junction-ambient
LQFP 48 - 7 x 7 mm
OH)*IOH
(1)
), and taking account of the actual VOL/I
57°C/W
OL
and
10.2.1 Reference document
JESD51-2 integrated circuits thermal test method environment conditions - natural
convection (still air). Available from www.jedec.org.
84/90Doc ID 022171 Rev 3
STM8S007C8Package characteristics
10.2.2 Selecting the product temperature range
When ordering the microcontroller, the temperature range is specified in the order code (see
Figure 40: STM8S007xx value line ordering information scheme(1)).
The following example shows how to calculate the temperature range needed for a given
application.
Assuming the following application conditions:
●Maximum ambient temperature T
●I
●Maximum eight standard I/Os used at the same time in output at low level with I
mA, V
●Maximum four high sink I/Os used at the same time in output at low level with I
mA, V
●Maximum two true open drain I/Os used at the same time in output at low level with
I
P
P
This gives: P
P
Thus: P
= 15 mA, VDD = 5.5 V
DDmax
= 2 V
OL
= 1.5 V
OL
= 20 mA, VOL= 2 V
OL
INTmax =
IOmax =
Dmax
15 mA x 5.5 V = 82.5 mW
(10 mA x 2 V x 8 ) + (20 mA x 2 V x 2) + (20 mA x 1.5 V x 4) = 360 mW
INTmax
= 82.5 mW + 360 mW
= 443 mW
Dmax
= 82.5 mW and P
Using the values obtained in Table 50: Thermal characteristics on page 84 T
calculated as follows for LQFP64 10 x 10 mm = 46 °C/W:
= 82 °C (measured according to JESD51-2)
Amax
360 mW:
IOmax
Jmax
is
OL
OL
= 10
= 20
T
= 82 °C + (46 °C/W x 443 mW) = 82 °C + 20 °C = 102 °C
Jmax
This is within the range of the suffix 6 version parts (-40 < T
< 105 °C).
J
In this case, parts must be ordered at least with the temperature range suffix 6.
Doc ID 022171 Rev 385/90
STM8 development toolsSTM8S007C8
11 STM8 development tools
Development tools for the STM8 microcontrollers include the full-featured STice emulation
system supported by a complete software tool package including C compiler, assembler and
integrated development environment with high-level language debugger. In addition, the
STM8 is to be supported by a complete range of tools including starter kits, evaluation
boards and a low-cost in-circuit debugger/programmer.
11.1 Emulation and in-circuit debugging tools
The STice emulation system offers a complete range of emulation and in-circuit debugging
features on a platform that is designed for versatility and cost-effectiveness. In addition,
STM8 application development is supported by a low-cost in-circuit debugger/programmer.
The STice is the fourth generation of full featured emulators from STMicroelectronics. It
offers new advanced debugging capabilities including profiling and coverage to help detect
and eliminate bottlenecks in application execution and dead code when fine tuning an
application.
In addition, STice offers in-circuit debugging and programming of STM8 microcontrollers via
the STM8 single wire interface module (SWIM), which allows non-intrusive debugging of an
application while it runs on the target microcontroller.
For improved cost effectiveness, STice is based on a modular design that allows you to
order exactly what you need to meet your development requirements and to adapt your
emulation system to support existing and future ST microcontrollers.
STice key features
●Occurrence and time profiling and code coverage (new features)
●Advanced breakpoints with up to 4 levels of conditions
●Data breakpoints
●Program and data trace recording up to 128 KB records
●Read/write on the fly of memory during emulation
●In-circuit debugging/programming via SWIM protocol
●8-bit probe analyzer
●1 input and 2 output triggers
●Power supply follower managing application voltages between 1.62 to 5.5 V
●Modularity that allows you to specify the components you need to meet your
development requirements and adapt to future requirements
●Supported by free software tools that include integrated development environment
(IDE), programming software interface and assembler for STM8.
86/90Doc ID 022171 Rev 3
STM8S007C8STM8 development tools
11.2 Software tools
STM8 development tools are supported by a complete, free software package from
STMicroelectronics that includes ST Visual Develop (STVD) IDE and the ST Visual
Programmer (STVP) software interface. STVD provides seamless integration of the Cosmic
and Raisonance C compilers for STM8. A free version that outputs up to 32 Kbytes of code
is available.
11.2.1 STM8 toolset
STM8 toolset with STVD integrated development environment and STVP programming
software is available for free download at www.st.com/mcu. This package includes:
ST Visual Develop – Full-featured integrated development environment from ST, featuring
●Seamless integration of C and ASM toolsets
●Full-featured debugger
●Project management
●Syntax highlighting editor
●Integrated programming interface
●Support of advanced emulation features for STice such as code profiling and coverage
ST Visual Programmer (STVP) – Easy-to-use, unlimited graphical interface allowing read,
write and verify of your STM8 microcontroller’s Flash program memory, data EEPROM and
option bytes. STVP also offers project mode for saving programming configurations and
automating programming sequences.
11.2.2 C and assembly toolchains
Control of C and assembly toolchains is seamlessly integrated into the STVD integrated
development environment, making it possible to configure and control the building of your
application directly from an easy-to-use graphical interface.
Available toolchains include:
●Cosmic C compiler for STM8 – One free version that outputs up to 32 Kbytes of code
is available. For more information, see www.cosmic-software.com.
●Raisonance C compiler for STM8 – One free version that outputs up to 32 Kbytes of
code. For more information, see www.raisonance.com.
●STM8 assembler linker – Free assembly toolchain included in the STVD toolset,
which allows you to assemble and link your application source code.
11.3 Programming tools
During the development cycle, STice provides in-circuit programming of the STM8 Flash
microcontroller on your application board via the SWIM protocol. Additional tools are to
include a low-cost in-circuit programmer as well as ST socket boards, which provide
dedicated programming platforms with sockets for programming your STM8.
For production environments, programmers will include a complete range of gang and
automated programming solutions from third-party tool developers already supplying
programmers for the STM8 family.
Doc ID 022171 Rev 387/90
Ordering informationSTM8S007C8
STM8S007C8T6TR
Product class
STM8 microcontroller
Pin count
C = 48 pins
Package type
T = LQFP
Example:
Sub-family type
(2)
007 = peripheral set
Family type
S = standard
Temperature range
6 = -40 °C to 85 °C
Program memory size
8 = 64 Kbyte
Package pitch
No character = 0.5 mm
Packing
No character = Tray or tube
TR = Tape and reel
12 Ordering information
Figure 40. STM8S007xx value line ordering information scheme
(1)
1. For a list of available options (e.g. memory size, package) and orderable part numbers or for further
information on any aspect of this device, please go to www.st.com
to you.
2. Refer to Table 1: STM8S007xx value line features for detailed description.
or contact the ST Sales Office nearest
88/90Doc ID 022171 Rev 3
STM8S007C8Revision history
13 Revision history
Table 51.Document revision history
DateRevisionChanges
31-Oct-20111Initial release.
Table 34: Flash program memory/data EEPROM memory: updated
06-Jan-20122
26-Apr-20123
VDD condition; updated t
Table 39: NRST pin characteristics: updated typ and max values of
the NRST Pull-up resistor.
Added document status on page 1 (datasheet-production data).
Modified temperature range and ACC
oscillator characteristics on page 57 (ACC
Modified Figure 35: SPI timing diagram - master mode(1) on page 73
(SCK output instead of SCK input).
parameters.
RET
values in Table 31: HSI
HSI
parameter).
HSI
Doc ID 022171 Rev 389/90
STM8S007C8
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