This datasheet contains the description of the device features, pinout, electrical characteristics,
mechanical data and ordering information.
For complete information on the STM8S microcontroller memory, registers and peripherals,
•
please refer to the STM8S microcontroller family reference manual (RM0016).
For information on programming, erasing and protection of the internal Flash memory
•
please refer to the STM8S Flash programming manual (PM0051).
For information on the debug and SWIM (single wire interface module) refer to the STM8
•
SWIM communication protocol and debug module user manual (UM0470).
For information on the STM8 core, please refer to the STM8 CPU programming manual
•
(PM0044).
7/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Description
Description2
The STM8S003x value line 8-bit microcontrollers feature 8 Kbytes Flash program memory,
plus integrated true data EEPROM. The STM8S microcontroller family reference manual
(RM0016) refers to devices in this family as low-density. They provide the following benefits:
performance, robustness, and reduced system cost.
Device performance and robustness are ensured by integrated true data EEPROM supporting
up to 100000 write/erase cycles, advanced core and peripherals made in a state-of-the art
technology, a 16 MHz clock frequency, robust I/Os, independent watchdogs with separate
clock source, and a clock security system.
The system cost is reduced thanks to high system integration level with internal clock
oscillators, watchdog and brown-out reset.
Full documentation is offered as well as a wide choice of development tools.
The following section intends to give an overview of the basic features of the device functional
modules and peripherals.
For more detailed information please refer to the corresponding family reference manual
(RM0016).
Central processing unit STM84.1
The 8-bit STM8 core is designed for code efficiency and performance.
It contains 6 internal registers which are directly addressable in each execution context, 20
addressing modes including indexed indirect and relative addressing and 80 instructions.
Architecture and registers
Harvard architecture
•
3-stage pipeline
•
32-bit wide program memory bus - single cycle fetching for most instructions
•
X and Y 16-bit index registers - enabling indexed addressing modes with or without offset
•
and read-modify-write type data manipulations
8-bit accumulator
•
24-bit program counter - 16-Mbyte linear memory space
•
16-bit stack pointer - access to a 64 K-level stack
•
8-bit condition code register - 7 condition flags for the result of the last instruction
•
Addressing
20 addressing modes
•
Indexed indirect addressing mode for look-up tables located anywhere in the address
•
space
Stack pointer relative addressing mode for local variables and parameter passing
•
Instruction set
80 instructions with 2-byte average instruction size
•
Standard data movement and logic/arithmetic functions
•
8-bit by 8-bit multiplication
•
16-bit by 8-bit and 16-bit by 16-bit division
•
Bit manipulation
•
Data transfer between stack and accumulator (push/pop) with direct stack access
•
Data transfer using the X and Y registers or direct memory-to-memory transfers
•
Single wire interface module (SWIM) and debug module (DM)4.2
The single wire interface module and debug module permits non-intrusive, real-time in-circuit
debugging and fast memory programming.
DocID018576 Rev 310/100
Product overviewSTM8S003K3 STM8S003F3
SWIM
Single wire interface module for direct access to the debug module and memory programming.
The interface can be activated in all device operation modes. The maximum data transmission
speed is 145 bytes/ms.
Debug module
The non-intrusive debugging module features a performance close to a full-featured emulator.
Beside memory and peripherals, also CPU operation can be monitored in real-time by means
of shadow registers.
R/W to RAM and peripheral registers in real-time
•
R/W access to all resources by stalling the CPU
•
Breakpoints on all program-memory instructions (software breakpoints)
•
Two advanced breakpoints, 23 predefined configurations
•
Interrupt controller4.3
Nested interrupts with three software priority levels
•
32 interrupt vectors with hardware priority
•
Up to 27 external interrupts on 6 vectors including TLI
•
Trap and reset interrupts
•
Flash program memory and data EEPROM4.4
8 Kbytes of Flash program single voltage Flash memory
•
128 bytes of true data EEPROM
•
User option byte area
•
Write protection (WP)
Write protection of Flash program memory and data EEPROM is provided to avoid unintentional
overwriting of memory that could result from a user software malfunction.
There are two levels of write protection. The first level is known as MASS (memory access
security system). MASS is always enabled and protects the main Flash program memory,
the data EEPROM, and the option bytes.
To perform in-application programming (IAP), this write protection can be removed by writing
a MASS key sequence in a control register. This allows the application to modify the content
of the main program memory and data EEPROM, or to reprogram the device option bytes.
A second level of write protection, can be enabled to further protect a specific area of memory
known as UBC (user boot code). Refer to the figure below.
The size of the UBC is programmable through the UBC option byte, in increments of 1 page
(64-byte block) by programming the UBC option byte in ICP mode.
This divides the program memory into two areas:
Main program memory: 8 Kbytes minus UBC
•
User-specific boot code (UBC): Configurable up to 8 Kbytes
•
The UBC area remains write-protected during in-application programming. This means that
the MASS keys do not unlock the UBC area. It protects the memory used to store the boot
11/100DocID018576 Rev 3
UBC area
Program memory area
Remains write protected during IAP
Write access possible for IAP
Option bytes
Programmable
bytes(1 page)
up to 8 Kbytes
(in 1 page steps)
area from 64
Low density
Flash program
memory
(8 Kbytes)
Data EEPROM (128 bytes)
STM8S003K3 STM8S003F3Product overview
program, specific code libraries, reset and interrupt vectors, the reset routine and usually the
IAP and communication routines.
Figure 2: Flash memory organization
Read-out protection (ROP)
The read-out protection blocks reading and writing from/to the Flash program memory and
the data EEPROM in ICP mode (and debug mode). Once the read-out protection is activated,
any attempt to toggle its status triggers a global erase of the program memory. Even if no
protection can be considered as totally unbreakable, the feature provides a very high level
of protection for a general purpose microcontroller.
Clock controller4.5
The clock controller distributes the system clock (f
to the core and the peripherals. It also manages clock gating for low power modes and ensures
clock robustness.
Features
Clock prescaler: To get the best compromise between speed and current consumption
•
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler.
Safe clock switching: Clock sources can be changed safely on the fly in run mode
•
through a configuration register. The clock signal is not switched until the new clock source
is ready. The design guarantees glitch-free switching.
Clock management: To reduce power consumption, the clock controller can stop the
•
clock to the core, individual peripherals or memory.
Master clock sources: Four different clock sources can be used to drive the master
•
clock:
1-16 MHz high-speed external crystal (HSE)
-
Up to 16 MHz high-speed user-external clock (HSE user-ext)
-
16 MHz high-speed internal RC oscillator (HSI)
-
128 kHz low-speed internal RC (LSI)
-
MASTER
) coming from different oscillators
DocID018576 Rev 312/100
Bit
Product overviewSTM8S003K3 STM8S003F3
Startup clock: After reset, the microcontroller restarts by default with an internal 2 MHz
•
clock (HSI/8). The prescaler ratio and clock source can be changed by the application
program as soon as the code execution starts.
Clock security system (CSS): This feature can be enabled by software. If an HSE clock
•
failure occurs, the internal RC (16 MHz/8) is automatically selected by the CSS and an
interrupt can optionally be generated.
Configurable main clock output (CCO): This outputs an external clock for use by the
•
application.
Table 2: Peripheral clock gating bit assignments in CLK_PCKENR1/2 registers
For efficent power management, the application can be put in one of four different low-power
modes. You can configure each mode to obtain the best compromise between lowest power
consumption, fastest start-up time and available wakeup sources.
Wait mode: In this mode, the CPU is stopped, but peripherals are kept running. The
•
wakeup is performed by an internal or external interrupt or reset.
Active halt mode with regulator on: In this mode, the CPU and peripheral clocks are
•
stopped. An internal wakeup is generated at programmable intervals by the auto wake up
unit (AWU). The main voltage regulator is kept powered on, so current consumption is
higher than in active halt mode with regulator off, but the wakeup time is faster. Wakeup
is triggered by the internal AWU interrupt, external interrupt or reset.
Active halt mode with regulator off: This mode is the same as active halt with regulator
•
on, except that the main voltage regulator is powered off, so the wake up time is slower.
Halt mode: In this mode the microcontroller uses the least power. The CPU and peripheral
•
clocks are stopped, the main voltage regulator is powered off. Wakeup is triggered by
external event or reset.
Watchdog timers4.7
The watchdog system is based on two independent timers providing maximum security to
the applications.
Activation of the watchdog timers is controlled by option bytes or by software. Once activated,
the watchdogs cannot be disabled by the user program without performing a reset.
13/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Product overview
Window watchdog timer
The window watchdog is used to detect the occurrence of a software fault, usually generated
by external interferences or by unexpected logical conditions, which cause the application
program to abandon its normal sequence.
The window function can be used to trim the watchdog behavior to match the application
perfectly.
The application software must refresh the counter before time-out and during a limited time
window.
A reset is generated in two situations:
1. Timeout: At 16 MHz CPU clock the time-out period can be adjusted between 75 µs up to
64 ms.
2. Refresh out of window: The downcounter is refreshed before its value is lower than the
one stored in the window register.
Independent watchdog timer
The independent watchdog peripheral can be used to resolve processor malfunctions due to
hardware or software failures.
It is clocked by the 128 kHZ LSI internal RC clock source, and thus stays active even in case
of a CPU clock failure
The IWDG time base spans from 60 µs to 1 s.
Auto wakeup counter4.8
Used for auto wakeup from active halt mode
•
Clock source: Internal 128 kHz internal low frequency RC oscillator or external clock
•
LSI clock can be internally connected to TIM1 input capture channel 1 for calibration
•
Beeper4.9
The beeper function outputs a signal on the BEEP pin for sound generation. The signal is in
the range of 1, 2 or 4 kHz.
The beeper output port is only available through the alternate function remap option bit AFR7.
TIM1 - 16-bit advanced control timer4.10
This is a high-end timer designed for a wide range of control applications. With its
complementary outputs, dead-time control and center-aligned PWM capability, the field of
applications is extended to motor control, lighting and half-bridge driver
16-bit up, down and up/down autoreload counter with 16-bit prescaler
•
Four independent capture/compare channels (CAPCOM) configurable as input capture,
•
output compare, PWM generation (edge and center aligned mode) and single pulse mode
output
Synchronization module to control the timer with external signals
•
Break input to force the timer outputs into a defined state
•
Three complementary outputs with adjustable dead time
•
DocID018576 Rev 314/100
Product overviewSTM8S003K3 STM8S003F3
Encoder mode
•
Interrupt sources: 3 x input capture/output compare, 1 x overflow/update, 1 x break
•
TIM2 - 16-bit general purpose timer4.11
16-bit autoreload (AR) up-counter
•
15-bit prescaler adjustable to fixed power of 2 ratios 1…32768
Interrupt sources: 3 x input capture/output compare, 1 x overflow/update
•
TIM4 - 8-bit basic timer4.12
8-bit autoreload, adjustable prescaler ratio to any power of 2 from 1 to 128
•
Clock source: CPU clock
•
Interrupt source: 1 x overflow/update
•
Table 3: TIM timer features
Timer
Counter
size (bits)
16TIM1
16TIM2
8TIM4
Prescaler
Any integer
from 1 to
65536
Any power of
2 from 1 to
32768
Any power of
2 from 1 to
128
Counting
mode
CAPCOM
channels
Complem.
outputs
Ext.
trigger
Yes34Up/down
No03Up
No00Up
Timer
synchronization/
chaining
No
Analog-to-digital converter (ADC1)4.13
The STM8S003xx products contain a 10-bit successive approximation A/D converter (ADC1)
with up to 5 external multiplexed inputs channels and the following features:
Input voltage range: 0 to V
•
Conversion time: 14 clock cycles
•
Single and continuous and buffered continuous conversion modes
•
Buffer size (n x 10 bits) where n = number of input channels
•
Scan mode for single and continuous conversion of a sequence of channels
•
Analog watchdog capability with programmable upper and lower thresholds
•
Analog watchdog interrupt
•
DD
15/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Product overview
External trigger input
•
Trigger from TIM1 TRGO
•
End of conversion (EOC) interrupt
•
Communication interfaces4.14
The following communication interfaces are implemented:
O3 = Fast/slow programmability with slow as default state after reset
O4 = Fast/slow programmability with fast as default state after reset
float = floating, wpu = weak pull-upInputPort and control
Output
T = True open drain, OD = Open drain, PP =
Push pull
Bold X (pin state after internal reset release).
Unless otherwise specified, the pin state is the same during the reset
phase and after the internal reset release.
Figure 3: STM8S003K3 LQFP32 pinout
DocID018576 Rev 318/100
Pinout and pin descriptionSTM8S003K3 STM8S003F3
1. (HS) high sink capability.
2. (T) True open drain (P-buffer and protection diode to VDDnot implemented).
3. [ ] alternate function remapping option (if the same alternate function is shown twice, it
indicates an exclusive choice not a duplication of the function).
Table 5: LQFP32 pin description
Pin
no.
2
4
6
7
Pin
name
PA1/ OSCI
SS
DD
TIM2_CH3
[SPI_NSS]
(2)
Type
OutputInput
Ext.
wpufloating
interrupt
High
sink
(1)
PPODSpeed
Main
function
(after reset)
ResetXI/ONRST1
Port A1XXO1XXXI/O
Port A2XXO1XXXI/OPA2/ OSCOUT3
Digital groundSV
1.8 V regulator capacitorSVCAP5
Digital power supplySV
Port A3XXO3HSXXXI/OPA3/
Port F4XXO1XXI/OPF48
Default
alternate
function
Resonator/
crystal in
Resonator/
crystal out
Timer 2
channel 3
Alternate
function
after remap
[option bit]
SPI master/
slave select
[AFR1]
13
14
TIM1_ETR
TIM1_CH3N
Port B7XXO1XXXI/OPB79
Port B6XXO1XXXI/OPB610
O1XXI/OPB5/ I2C_SDA11
O1XXI/OPB4/ I2C_SCL12
(3)
T
(3)
T
Port B3XXO3HSXXXI/OPB3/AIN3/
Port B2XXO3HSXXXI/OPB2/AIN2/
I2C dataPort B5
I2C clockPort B4
Analog input 3/
Timer 1
external trigger
Analog input 2/
Timer 1 inverted
channel 3
19/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Pinout and pin description
Pin
no.
15
16
17
18
19
Pin
name
TIM1_CH2N
TIM1_CH1N
SPI_NSS
TIM1_CH1/
UART1_CK
TIM1_CH2
Type
OutputInput
Ext.
wpufloating
interrupt
High
sink
(1)
PPODSpeed
Main
function
(after reset)
Port B1XXO3HSXXXI/OPB1/AIN1/
Port B0XXO3HSXXXI/OPB0/AIN0/
Port E5XXO3HSXXXI/OPE5/
Port C1XXO3HSXXXI/OPC1/
Port C2XXO3HSXXXI/OPC2/
Default
alternate
function
Analog input 1/
Timer 1 inverted
channel 2
Analog input 0/
Timer 1 inverted
channel 1
SPI
master/slave
select
Timer 1 channel 1
UART1 clock
Timer 1 channel 2
Alternate
function
after remap
[option bit]
20
21
25
26
27
TIM1_CH3
TIM1_CH4/
CLK_CCO
TIM1_BKIN
[CLK_CCO]
(4)
[TIM2_CH3]
Port C3XXO3HSXXXI/OPC3/
Port C4XXO3HSXXXI/OPC4/
Port C6XXO3HSXXXI/OPC6/ PI_MOSI23
Port C7XXO3HSXXXI/OPC7/ PI_MISO24
Port D0XXO3HSXXXI/OPD0/
Port D1XXO4HSXXXI/OPD1/ SWIM
Port D2XXO3HSXXXI/OPD2
Timer 1 channel 3
Timer 1 channel 4
/configurable
clock output
SPI clockPort C5XXO3HSXXXI/OPC5/ SPI_SCK22
SPI master
out/slave in
SPI master in/
slave out
Timer 1 - break
input
SWIM data
interface
Configurable
clock output
[AFR5]
Timer 2 channel
3[AFR1]
DocID018576 Rev 320/100
20
19
18
17
16
15
14
13
1
2
3
4
5
6
7
8
UART1_CK/TIM2_CH1/BEEP/(HS)PD4
NRST
V
DD
VCAP
V
SS
OSCOUT/PA2
PD3 (HS)/AIN4/TIM2_CH2/ADC_ETR
PD1(HS)/SWIM
PB4 (T)/I2C_SCL [ADC_ETR]
PC3 (HS)/TIM1_CH3 [TLI] [TIM1_CH1N]
PC4 (HS)/TIM1_CH4/CLK_CCO/AIN2/[TIM1_CH2N]
PC5 (HS)/SPI_SCK [TIM2_CH1]
12
11
9
10
[SPI_NSS] TIM2_CH3/(HS) PA3
PD2 (HS)/AIN3/[TIM2_CH3]
OSCIN/PA1
PB5 (T)/I2C_SDA [TIM1_BKIN]
UART1_TX/AIN5/(HS) PD5
UART1_RX/AIN6/(HS) PD6
PC6 (HS)/SPI_MOSI [TIM1_CH1]
PC7 (HS)/SPI_MISO [TIM1_CH2]
Pinout and pin descriptionSTM8S003K3 STM8S003F3
Pin
no.
28
29
Pin
name
TIM2_CH2/
ADC_ETR
TIM2_CH1
Type
OutputInput
Ext.
wpufloating
interrupt
High
sink
(1)
PPODSpeed
Main
function
(after reset)
Port D3XXO3HSXXXI/OPD3/
Default
alternate
function
Timer 2 channel 2/ADC
external trigger
Port D4XXO3HSXXXI/OPD4/BEEP/
Timer 2 channel
Alternate
function
after remap
[option bit]
1/BEEP output
30
31
32
UART1_TX
Port D5XXO3HSXXXI/OPD5/
Port D6XXO3HSXXXI/OPD6/
UART1_RX
Port D7XXO3HSXXXI/OPD7/ TLI
[TIM1_CH4]
UART1 data
transmit
UART1 data
receive
Top level
interrupt
Timer 1 channel 4
[AFR6]
(1)
I/O pins used simultaneously for high current source/sink must be uniformly spaced around the package. In addition, the total
driven current must respect the absolute maximum ratings (see Electrical characteristics).
(2)
When the MCU is in Halt/Active-halt mode, PA1 is automatically configured in input weak pull-up and cannot be used for waking
up the device. In this mode, the output state of PA1 is not driven. It is recommended to use PA1 only in input mode if Halt/Active-halt
is used in the application.
(3)
In the open-drain output column, "T" defines a true open-drain I/O (P-buffer, weak pull-up, and protection diode to VDDare not
implemented).
(4)
The PD1 pin is in input pull-up during the reset phase and after internal reset release.
STM8S003F3 TSSOP20/UFQFPN20 pinout and pin description5.2
STM8S003F3 TSSOP20 pinout and pin description5.2.1
Figure 4: STM8S003F3 TSSOP20 pinout
1. HS high sink capability.
21/100DocID018576 Rev 3
2
1
3
4
5
6 7 8
9
11
12
13
14
15
16171819
VCAP
V
SS
OSCOUT/PA2
OSCIN/PA1
[SPI_NSS] TIM2_CH3/(HS) PA3
NRST
PD4 (HS)/BEEP / TIM2_CH1/UART1_CK
PD5(HS)/AIN5/UART1_TX
PD3 (HS)/AIN4/TIM2_CH2/ADC_ETR
PD2(HS)/AIN3/{TIM2_CH3]
PC4(HS)/TIM1_CH4/CLK_CCO/AIN2/[TIM1_CH2N]
PC5 (HS)/SPI_SCK [TIM2_CH1]
PC6(HS)/SPI_MOSI [TIM1_CH1]
PC7(HS)/SPI_MISO[TIM1_CH2]
PD1(HS)/SWIM
[TIM1_BKIN] I
2
C_SDA/(T)PB5
10
PD6(HS)/AIN6/UART1_RX
20
V
DD
[ADC_ETR] I
2
C_SCL/(T)PB4
STM8S003K3 STM8S003F3Pinout and pin description
2. (T) True open drain (P-buffer and protection diode to VDDnot implemented).
3. [ ] alternate function remapping option (If the same alternate function is shown twice, it
indicates an exclusive choice not a duplication of the function).
STM8S003F3 UFQFPN20 pinout5.2.2
Figure 5: STM8S003F3 UFQFPN20-pin pinout
Pin no.
1. HS high sink capability.
2. (T) True open drain (P-buffer and protection diode to VDDnot implemented).
3. [ ] alternate function remapping option (if the same alternate function is shown twice, it
indicates an exclusive choice not a duplication of the function).
Analog
input 4/
Timer 2 channel
2/ADC
external
trigger
Alternate
function after
remap [option
bit]
Timer 1 channel 1
[AFR0]
Timer 1 channel 2
[AFR0]
Timer 2 channel 3
[AFR1]
Pin no.
TypePin name
1316
1417
1518
1619
1720
(1)
I/O pins used simultaneously for high current source/sink must be uniformly spaced around the package. In addition, the total
driven current must respect the absolute maximum ratings.
(2)
When the MCU is in halt/active-halt mode, PA1 is automatically configured in input weak pull-up and cannot be used for waking
up the device. In this mode, the output state of PA1 is not driven. It is recommended to use PA1 only in input mode if halt/active-halt
is used in the application.
(3)
In the open-drain output column, "T" defines a true open-drain I/O (P-buffer, weak pull-up, and protection diode to VDDare
not implemented).
(4)
The PD1 pin is in input pull-up during the reset phase and after internal reset release.
SPI_MOSI
[TIM1_ CH1]
SPI_MISO
[TIM1_ CH2]
(4)
SWIM
CH3]
TIM2_ CH2/
ADC_ ETR
wpufloatingUFQFPN20TSSOP20
Alternate function remapping5.3
As shown in the rightmost column of the pin description table, some alternate functions can
be remapped at different I/O ports by programming one of eight AFR (alternate function
remap) option bits. When the remapping option is active, the default alternate function is no
longer available.
To use an alternate function, the corresponding peripheral must be enabled in the peripheral
registers.
Alternate function remapping does not effect GPIO capabilities of the I/O ports (see the GPIO
section of the family reference manual, RM0016).
DocID018576 Rev 324/100
0x00 9FFF
Flash program memory
(8 Kbytes)
0x00 0000
RAM
0x00 03FF
(1 Kbyte)
513 bytes stack
Reserved
Reserved
0x00 A000
0x02 7FFF
0x00 47FF
0x00 8000
32 interrupt vectors
0x00 807F
GPIO and periph. reg.
0x00 5000
0x00 57FF
0x00 5800
0x00 7FFF
0x00 480B
0x00 4FFF
0x00 7EFF
CPU/SWIM/debug/ITC
registers
0x00 7F00
Reserved
Option bytes
0x00 480A
0x00 4800
0x00 0800
0x00 8080
Reserved
0x00 407F
Data EEPROM
0x00 4000
Reserved
Memory and register mapSTM8S003K3 STM8S003F3
Memory and register map6
Memory map6.1
Figure 6: Memory map
25/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Memory and register map
Register map6.2
I/O port hardware register map6.2.1
Table 7: I/O port hardware register map
0x00 5000
0x00 5005
0x00 500A
Port A
Port B
Port C
Register nameRegister labelBlockAddress
Reset
status
0x00Port A data output latch registerPA_ODR
(1)
Port A input pin value registerPA_IDR0x00 5001
0xXX
0x00Port A data direction registerPA_DDR0x00 5002
0x00Port A control register 1PA_CR10x00 5003
0x00Port A control register 2PA_CR20x00 5004
0x00Port B data output latch registerPB_ODR
(1)
Port B input pin value registerPB_IDR0x00 5006
0xXX
0x00Port B data direction registerPB_DDR0x00 5007
0x00Port B control register 1PB_CR10x00 5008
0x00Port B control register 2PB_CR20x00 5009
0x00Port C data output latch registerPC_ODR
(1)
Port C input pin value registerPB_IDR0x00 500B
0xXX
0x00Port C data direction registerPC_DDR0x00 500C
0x00 500F
0x00 5014
Port D
Port E
0x00Port C control register 1PC_CR10x00 500D
0x00Port C control register 2PC_CR20x00 500E
0x00Port D data output latch registerPD_ODR
(1)
Port D input pin value registerPD_IDR0x00 5010
0xXX
0x00Port D data direction registerPD_DDR0x00 5011
0x02Port D control register 1PD_CR10x00 5012
0x00Port D control register 2PD_CR20x00 5013
0x00Port E data output latch registerPE_ODR
(1)
Port E input pin value registerPE_IDR0x00 5015
0xXX
0x00Port E data direction registerPE_DDR0x00 5016
0x00Port E control register 1PE_CR10x00 5017
DocID018576 Rev 326/100
Memory and register mapSTM8S003K3 STM8S003F3
0x00 5019
Port F
(1)
Depends on the external circuitry.
General hardware register map6.2.2
Register nameRegister labelBlockAddress
Port F input pin value registerPF_IDR0x00 501A
Table 8: General hardware register map
Register nameRegister labelBlockAddress
Reset
status
0x00Port E control register 2PE_CR2Port E0x00 5018
0x00Port F data output latch registerPF_ODR
0xXX
0x00Port F data direction registerPF_DDR0x00 501B
0x00Port F control register 1PF_CR10x00 501C
0x00Port F control register 2PF_CR20x00 501D
Reset
status
(1)
0x00 5059
0x00 5061
Reserved area (60 bytes)0x00 501E to
Flash0x00 505A
0x00Flash control register 1FLASH_CR1
0x00Flash control register 2FLASH_CR20x00 505B
0xFFFlash complementary control register 2FLASH_NCR20x00 505C
Option bytes contain configurations for device hardware features as well as the memory
protection of the device. They are stored in a dedicated block of the memory. Except for the
ROP (read-out protection) byte, each option byte has to be stored twice, in a regular form
(OPTx) and a complemented one (NOPTx) for redundancy.
Option bytes can be modified in ICP mode (via SWIM) by accessing the EEPROM address
shown in the table below.
Option bytes can also be modified ‘on the fly’ by the application in IAP mode, except the ROP
option that can only be modified in ICP mode (via SWIM).
Refer to the STM8S Flash programming manual (PM0051) and STM8 SWIM communication
protocol and debug module user manual (UM0470) for information on SWIM programming
procedures.
1: Port C5 alternate function = TIM2_CH1; port C6
alternate function = TIM1_CH1; port C7 alternate
function = TIM1_CH2.
(1)
Refer to pinout description.
(2)
Do not use more than one remapping option in the same port. It is forbidden to enable
both AFR1 and AFR0.
(2)
45/100DocID018576 Rev 3
50 pF
STM8 pin
STM8S003K3 STM8S003F3Electrical characteristics
Electrical characteristics9
Parameter conditions9.1
Unless otherwise specified, all voltages are referred to VSS.
Minimum and maximum values9.1.1
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100 % of the devices with an ambient temperature at TA= 25 °C and TA= T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on characterization,
the minimum and maximum values refer to sample tests and represent the mean value plus
or minus three times the standard deviation (mean ± 3 Σ).
Typical values9.1.2
Unless otherwise specified, typical data are based on TA= 25 °C, VDD= 5 V. They are given
only as design guidelines and are not tested.
Amax
(given by
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ± 2 Σ).
Typical curves9.1.3
Unless otherwise specified, all typical curves are given only as design guidelines and are not
tested.
Loading capacitor9.1.4
The loading conditions used for pin parameter measurement are shown in the following figure.
Figure 7: Pin loading conditions
Pin input voltage9.1.5
The input voltage measurement on a pin of the device is described in the following figure.
DocID018576 Rev 346/100
STM8 pin
V
IN
V
DDx
- V
Electrical characteristicsSTM8S003K3 STM8S003F3
Figure 8: Pin input voltage
Absolute maximum ratings9.2
Stresses above those listed as ‘absolute maximum ratings’ may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 15: Voltage characteristics
SS
Supply voltage
(1)
6.5-0.3
UnitMaxMinRatingsSymbol
V
|V
|V
V
IN
DDx
SSx
ESD
- VDD|
- VSS|
Input voltage on true open drain pins
Input voltage on any other pin
(2)
Variations between different power pins
Variations between all the different ground
pins
Electrostatic discharge voltage
(2)
6.5VSS- 0.3
VDD+ 0.3VSS- 0.3
50
50
See "Absolute
maximum ratings
V
mV
(electrical sensitivity)"
(1)
All power (VDD) and ground (VSS) pins must always be connected to the external power supply
(2)
I
cannot be respected, the injection current must be limited externally to the I
must never be exceeded. This is implicitly insured if VINmaximum is respected. If VINmaximum
INJ(PIN)
INJ(PIN)
value. A positive
injection is induced by VIN>VDDwhile a negative injection is induced by VIN<VSS. For true open-drain
pads, there is no positive injection current, and the corresponding VINmaximum must always be respected
Table 16: Current characteristics
I
VDD
RatingsSymbol
Total current into VDDpower lines (source)
(2)
Max
(1)
Unit
mA100
47/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Electrical characteristics
RatingsSymbol
I
VSS
I
IO
Total current out of VSSground lines (sink)
Output current sunk by any I/O and control pin
(2)
Output current source by any I/Os and control pin
I
INJ(PIN)
(3) (4)
Injected current on NRST pin
Injected current on OSCIN pin
Injected current on any other pin
ΣI
INJ(PIN)
(1)
Data based on characterization results, not tested in production.
(2)
All power (VDD) and ground (VSS) pins must always be connected to the external supply.
(3)
I
(3)
Total injected current (sum of all I/O and control pins)
must never be exceeded. This is implicitly insured if VINmaximum is respected. If VINmaximum
INJ(PIN)
cannot be respected, the injection current must be limited externally to the I
(5)
(5)
INJ(PIN)
value. A positive
Max
80
20
- 20
± 4
± 4
± 4
± 20
(1)
Unit
injection is induced by VIN>VDDwhile a negative injection is induced by VIN<VSS. For true open-drain
pads, there is no positive injection current, and the corresponding VINmaximum must always be respected
(4)
ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins
should be avoided as this significantly reduces the accuracy of the conversion being performed on
another analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins
which may potentially inject negative current. Any positive injection current within the limits specified for
I
INJ(PIN)
(5)
and ΣI
INJ(PIN)
in the I/O port pin characteristics section does not affect the ADC accuracy.
When several inputs are submitted to a current injection, the maximum ΣI
INJ(PIN)
is the absolute sum
of the positive and negative injected currents (instantaneous values). These results are based on
characterization with ΣI
INJ(PIN)
maximum current injection on four I/O port pins of the device.
STG
J
Table 17: Thermal characteristics
UnitValueRatingsSymbol
-65 to +150Storage temperature rangeT
°C
150Maximum junction temperatureT
DocID018576 Rev 348/100
Electrical characteristicsSTM8S003K3 STM8S003F3
Operating conditions9.3
Table 18: General operating conditions
UnitMaxMinConditionsParameterSymbol
CPU
DD
VCAP
(3)
P
D
T
A
T
J
(1)
C
: capacitance of
EXT
external capacitor
ESR of external
capacitor
ESL of external
capacitor
Power dissipation at TA= 85 °C
for suffix 6
version
Junction temperature range for
suffix 6
at 1 MHz
Maximum power dissipationAmbient temperature for 6 suffix
(2)
MHz160Internal CPU clock frequencyf
V5.52.95Standard operating voltageV
nF3300470
Ω0.3-
nH15-
238-TSSOP20
220-UFQFPN20
mW
330-LQFP32
85-40
°C
105-40
(1)
Care should be taken when selecting the capacitor, due to its tolerance, as well as the parameter
dependency on temperature, DC bias and frequency in addition to other factors. The parameter maximum
value must be respected for the full application range.
(2)
This frequency of 1 MHz as a condition for VCAP parameters is given by design of internal regulator.
(3)
To calculate P
value for T
Dmax(TA
given in the previous table and the value for ΘJAgiven in Thermal characteristics.
Jmax
), use the formula P
Dmax
=(T
- TA)/ΘJA(see Thermal characteristics ) with the
Jmax
49/100DocID018576 Rev 3
16
12
8
4
0
2.95
4.0
5.0
5.5
f
CPU
(MHz)
Functionality guaranteed
@TA-40 to 85 °C
Supply voltage
Functionality
not
guaranteed
in this area
C
Rleak
ESRESL
STM8S003K3 STM8S003F3Electrical characteristics
t
VDD
Figure 9: f
CPUmax
versus V
DD
Table 19: Operating conditions at power-up/power-down
(1)
UnitMaxTypMinConditionsParameterSymbol
∞2VDDrise time rate
μs/V
∞2VDDfall time rate
TEMP
IT+
IT-
HYS(BOR)
(1)
Reset is always generated after a t
delay. The application must ensure that VDDis still above the
TEMP
minimum ooperating voltage (VDDmin) when the t
VCAP external capacitor9.3.1
Stabilization for the main regulator is achieved connecting an external capacitor C
V
pin. C
CAP
the series inductance to less than 15 nH.
is specified in the Operating conditions section. Care should be taken to limit
EXT
Figure 10: External capacitor C
delay has elapsed.
TEMP
EXT
ms1.7VDDrisingReset release delayt
2.852.72.6Power-on reset thresholdV
V
2.82.652.5Brown-out reset thresholdV
mV70Brown-out reset hysteresisV
to the
EXT
1. ESR is the equivalent series resistance and ESL is the equivalent inductance.
DocID018576 Rev 350/100
Electrical characteristicsSTM8S003K3 STM8S003F3
Supply current characteristics9.3.2
The current consumption is measured as described in Pin input voltage.
Total current consumption in run mode9.3.2.1
The MCU is placed under the following conditions:
All I/O pins in input mode with a static value at VDDor VSS(no load)
•
All peripherals are disabled (clock stopped by peripheral clock gating registers) except if
•
explicitly mentioned.
Subject to general operating conditions for VDDand TA.
Table 20: Total current consumption with code execution in run mode at VDD= 5 V
Max
2.352HSE user ext. clock (16 MHz)
21.7HSI RC osc. (16 MHz)
(1)
f
= f
CPU
16 MHz
MASTER
TypConditionsParameterSymbol
2.3HSE crystal osc. (16 MHz)
=
Unit
I
DD(RUN)
I
DD(RUN)
Supply current
in run mode,
code executed
from RAM
Supply current
in run mode,
code executed
from Flash
Supply current
in run mode,
code executed
from Flash
= f
CPU
MASTER
125 kHz
f
= f
CPU
MASTER
15.625 kHz
f
= f
CPU
MASTER
128 kHz
f
= f
CPU
MASTER
16 MHz
f
= f
CPU
MASTER
2 MHz
f
= f
CPU
MASTER
125 kHz
f
= f
CPU
MASTER
15.625 kHz
/128 =
/128 =
=
=
=
/128 =
/128 =
(2)
0.86HSE user ext. clock (16 MHz)f
0.870.7HSI RC osc. (16 MHz)
0.580.46HSI RC osc. (16 MHz/8)
mA
0.550.41LSI RC osc. (128 kHz)
4.5HSE crystal osc. (16 MHz)
4.754.3HSE user ext. clock (16 MHz)
4.53.7HSI RC osc. (16 MHz)
1.050.84HSI RC osc. (16 MHz/8)
0.90.72HSI RC osc. (16 MHz)
mA
0.580.46HSI RC osc. (16 MHz/8)
f
= f
CPU
128 kHz
MASTER
=
0.570.42LSI RC osc. (128 kHz)
51/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Electrical characteristics
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
Table 21: Total current consumption with code execution in run mode at VDD= 3.3 V
I
DD(RUN)
Supply current
in run mode,
code executed
from RAM
Supply current
in run mode,
code executed
from Flash
f
CPU
= f
MASTER
=
16 MHz
CPU
= f
MASTER
/
128 = 125 kHz
f
CPU
= f
MASTER
/
128 = 15.625 kHz
f
CPU
= f
MASTER
=
128 kHz
f
CPU
= f
MASTER
=
16 MHz
f
CPU
= f
MASTER
=
2 MHz
f
CPU
= f
MASTER
/
128 = 125 kHz
(2)
TypConditionsParameterSymbol
Max
(1)
Unit
1.8HSE crystal osc. (16 MHz)
2.32HSE user ext. clock (16 MHz)
21.5HSI RC osc. (16 MHz)
0.81HSE user ext. clock (16 MHz)f
0.870.7HSI RC osc. (16 MHz)
0.580.46HSI RC osc. (16 MHz/8)
0.550.41LSI RC osc. (128 kHz)
4HSE crystal osc. (16 MHz)
mA
4.73.9HSE user ext. clock (16 MHz)
4.53.7HSI RC osc. (16 MHz)
1.050.84HSI RC osc. (16 MHz/8)
0.90.72HSI RC osc. (16 MHz)
f
= f
CPU
MASTER
128 = 15.625 kHz
f
= f
CPU
MASTER
/
HSI RC osc. (16 MHz/8)
=
128 kHz
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
DocID018576 Rev 352/100
0.580.46
0.570.42LSI RC osc. (128 kHz)
Total current consumption in wait mode9.3.2.2
Table 22: Total current consumption in wait mode at VDD= 5 V
Electrical characteristicsSTM8S003K3 STM8S003F3
f
CPU
= f
MASTER
=
16 MHz
f
I
DD(WFI)
Supply
current in
= f
CPU
125 kHz
MASTER
/128 =
wait mode
f
CPU
= f
MASTER
/128 =
15.625 kHz
f
CPU
= f
MASTER
=
128 kHz
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
Table 23: Total current consumption in wait mode at VDD= 3.3 V
(2)
TypConditionsParameterSymbol
Max
(1)
Unit
1.6HSE crystal osc. (16 MHz)
1.31.1HSE user ext. clock (16 MHz)
1.10.89HSI RC osc. (16 MHz)
0.880.7HSI RC osc. (16 MHz)
mA
0.570.45HSI RC osc. (16 MHz/8)
0.540.4LSI RC osc. (128 kHz)
I
DD(WFI)
Supply current
in wait mode
f
= f
CPU
MASTER
16 MHz
f
= f
CPU
MASTER
125 kHz
f
= f
CPU
MASTER
15.625 kHz
f
= f
CPU
MASTER
128 kHz
=
/ 128 =
/ 128 =
=
HSE crystal osc.
(16 MHz)
HSE user ext. clock
(16 MHz)
HSI RC osc.
(16 MHz)
HSI RC osc.
(16 MHz)
HSI RC osc.
(16 MHz/8)
(2)
LSI RC osc.
(128 kHz)
TypConditionsParameterSymbol
1.1
Max
1.31.1
1.10.89
0.880.7
0.570.45
0.540.4
(1)
Unit
mA
53/100DocID018576 Rev 3
(1)
Data based on characterization results, not tested in production.
(2)
Default clock configuration measured with all peripherals off.
Total current consumption in active halt mode9.3.2.3
Table 24: Total current consumption in active halt mode at VDD= 5 V
STM8S003K3 STM8S003F3Electrical characteristics
I
DD(AH)
I
DD(AH)
I
DD(AH)
I
DD(AH)
I
DD(AH)
I
DD(AH)
ParameterSymbol
Supply current in
active halt mode
Supply current in
active halt mode
Supply current in
active halt mode
Supply current in
active halt mode
Supply current in
active halt mode
Supply current in
active halt mode
Conditions
Main
voltage
regulator
(2)
(MVR)
Off
(3)
Operating modeOn
Operating modeOn
Power-down modeOn
Power-down modeOn
Operating mode
Power-down mode
Clock sourceFlash mode
HSE crystal osc.
(16 MHz)
LSI RC osc.
(128 kHz)
HSE crystal osc.
(16 MHz)
LSI RC osc.
(128 kHz)
LSI RC osc.
(128 kHz)
LSI RC osc.
(128 kHz)
Typ
1030
970
Max
at 85
°C
(1)
260200
200150
8566
2010
Unit
μA
(1)
Data based on characterization results, not tested in production
(2)
Configured by the REGAH bit in the CLK_ICKR register.
(3)
Configured by the AHALT bit in the FLASH_CR1 register.
Table 25: Total current consumption in active halt mode at VDD= 3.3 V
Conditions
Main voltage
regulator
(2)
(MVR)
(3)
Operating modeOn
DocID018576 Rev 354/100
I
DD(AH)
ParameterSymbol
Supply current in
active halt mode
Clock sourceFlash mode
HSE crystal osc.
(16 MHz)
Typ
Max at
85 °C
(1)
Unit
μA550
Conditions
Main voltage
regulator
(2)
(MVR)
(3)
Operating mode
I
DD(AH)
ParameterSymbol
Supply current in
active halt mode
I
DD(AH)
On
Power-down
mode
I
DD(AH)
Supply current in
I
DD(AH)
active halt mode
Off
I
DD(AH)
(1)
Data based on characterization results, not tested in production
(2)
Configured by the REGAH bit in the CLK_ICKR register.
(3)
Configured by the AHALT bit in the FLASH_CR1 register.
Operating mode
Power-down
mode
Clock sourceFlash mode
LSI RC osc.
(128 kHz)
HSE crystal osc.
(16 MHz)
LSI RC osc.
(128 kHz)
(128 kHz)
Electrical characteristicsSTM8S003K3 STM8S003F3
Typ
970
Max at
85 °C
260200
200150
8066LSI RC osc.
1810
(1)
Unit
μA
Total current consumption in halt mode9.3.2.4
Table 26: Total current consumption in halt mode at VDD= 5 V
Supply current in halt
mode
I
DD(H)
(1)
Data based on characterization results, not tested in production
Table 27: Total current consumption in halt mode at VDD= 3.3 V
I
DD(H)
Supply current in halt
mode
Flash in operating mode, HSI clock
after wakeup
Flash in power-down mode, HSI
clock after wakeup
Flash in operating mode, HSI clock
after wakeup
TypConditionsParameterSymbol
Max at 85
(1)
°C
Unit
7563
μA
206.0
Max at 85
TypConditionsParameterSymbol
°C
(1)
Unit
μA7560
55/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Electrical characteristics
Max at 85
TypConditionsParameterSymbol
°C
(1)
Unit
Flash in power-down mode, HSI
clock after wakeup
(1)
Data based on characterization results, not tested in production
Low power mode wakeup times9.3.2.5
Table 28: Wakeup times
t
WU(WFI)
t
WU(AH)
Wakeup time from
wait mode to run
(3)
Wakeup time active
halt mode to run
(3)
mode
Wakeup time active
halt mode to run
(3)
mode
Wakeup time active
halt mode to run
(3)
mode
0 to 16 MHz
= f
CPU
MASTER
MVR voltage
regulator
(4)
on
MVR voltage
regulator
(4)
on
MVR voltage
regulator
(4)
off
= 16 MHzmode
Flash in operating
(5)
mode
Flash in
power-down
(5)
Flash in operating
(5)
mode
HSI
(after
wakeup)
HSI
(after
wakeup)mode
HSI
(after
wakeup)
TypConditionsParameterSymbol
0.56f
1
3
48
(6)
(6)
(6)
174.5
Max
See
note
(6)
2
(1)
Unit
(2)
μs
Wakeup time active
halt mode to run
(3)
mode
MVR voltage
regulator
(4)
off
Flash in
power-down
Wakeup time from
t
WU(H)
(1)
Data guaranteed by design, not tested in production.
(2)
t
WU(WFI)
halt mode to run
(3)
mode
= 2 x 1/f
master
+ x 1/f
CPU.
DocID018576 Rev 356/100
(5)
(5)
(5)
HSI
(after
wakeup)mode
50
52Flash in operating mode
54Flash in power-down mode
(6)
(3)
Measured from interrupt event to interrupt vector fetch.
(4)
Configured by the REGAH bit in the CLK_ICKR register.
(5)
Configured by the AHALT bit in the FLASH_CR1 register.
(6)
Plus 1 LSI clock depending on synchronization.
Total current consumption and timing in forced reset state9.3.2.6
Table 29: Total current consumption and timing in forced reset state
Electrical characteristicsSTM8S003K3 STM8S003F3
I
DD(R)
(2)
state
t
RESETBL
Reset pin release to
vector fetch
(1)
Data guaranteed by design, not tested in production.
(2)
Characterized with all I/Os tied to VSS.
Current consumption of on-chip peripherals9.3.2.7
Subject to general operating conditions for VDDand TA.
I
DD(TIM1)
HSI internal RC/f
TIM1 supply current
CPU
= f
MASTER
= 16 MHz, VDD= 5 V
Table 30: Peripheral current consumption
(1)
210
TypConditionsParameterSymbol
Max
(1)
Unit
400VDD= 5 VSupply current in reset
μA
300VDD= 3.3 V
μs150
UnitTyp.ParameterSymbol
I
DD(TIM2)
I
DD(TIM4)
I
DD(UART1)
I
DD(SPI)
I
DD(I2C)
I
DD(ADC1)
TIM2 supply current
TIM4 timer supply current
UART1 supply current
SPI supply current
I2C supply current
(1)
(1)
(2)
(2)
(2)
ADC1 supply current when converting
(3)
130
50
120
45
65
1000
μA
57/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Electrical characteristics
(1)
Data based on a differential IDDmeasurement between reset configuration and timer counter running
at 16 MHz. No IC/OC programmed (no I/O pads toggling). Not tested in production.
(2)
Data based on a differential IDDmeasurement between the on-chip peripheral when kept under reset
and not clocked and the on-chip peripheral when clocked and not kept under reset. No I/O pads toggling.
Not tested in production.
(3)
Data based on a differential IDDmeasurement between reset configuration and continuous A/D
conversions. Not tested in production.
Current consumption curves9.3.2.8
The following figures show typical current consumption measured with code executing in
RAM.
Figure 11: Typ I
DD(RUN)
vs. VDDHSE user external clock, f
CPU
= 16 MHz
Figure 12: Typ I
DD(RUN)
DocID018576 Rev 358/100
vs. f
HSE user external clock, VDD= 5 V
CPU
Electrical characteristicsSTM8S003K3 STM8S003F3
Figure 13: Typ I
Figure 14: Typ I
DD(WFI)
DD(RUN)
vs. VDDHSI RC osc, f
CPU
vs. VDDHSE user external clock, f
= 16 MHz
= 16 MHz
CPU
59/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Electrical characteristics
Figure 15: Typ I
Figure 16: Typ I
DD(WFI)
DD(WFI)
vs. f
HSE user external clock, VDD= 5 V
CPU
vs. VDDHSI RC osc, f
CPU
= 16 MHz
f
HSE_ext
HSEH
HSEL
LEAK_HSE
External clock sources and timing characteristics9.3.3
HSE user external clock
Subject to general operating conditions for VDDand TA.
Table 31: HSE user external clock characteristics
User external clock source
frequency
(1)
(1)
OSCIN input pin high level voltageV
OSCIN input pin low level voltageV
OSCIN input leakage currentI
DocID018576 Rev 360/100
VSS< VIN<
V
DD
UnitMaxMinConditionsParameterSymbol
MHz160
DD
VDD+ 0.3 V0.7 x V
V
V
SS
0.3 x V
DD
μA+1-1
(1)
V
HSEH
V
HSEL
External clock
source
OSCIN
f
HSE
STM8
Data based on characterization results, not tested in production.
Figure 17: HSE external clock source
HSE crystal/ceramic resonator oscillator
The HSE clock can be supplied with a 1 to 16 MHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and start-up stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
Electrical characteristicsSTM8S003K3 STM8S003F3
f
HSE
F
(1)
C
I
DD(HSE)
g
m
SU(HSE)
External high speed
oscillator frequency
Feedback resistorR
Recommended load
capacitance
HSE oscillator power
consumption
Oscillator
transconductance
(4)
Table 32: HSE oscillator characteristics
(2)
C = 20 pF,
f
= 16 MHz
OSC
C = 10 pF,
f
=16 MHz
OSC
VDDis stabilizedStartup timet
6 (startup)
1.6 (stabilized)
6 (startup)
1.2 (stabilized)
UnitMaxTypMinConditionsParameterSymbol
MHz161
kΩ220
pF20
(3)
mA
(3)
mA/V5
ms1
61/100DocID018576 Rev 3
OSCOUT
OSCIN
f
HSE
to core
C
L1
C
L2
R
F
STM8
Resonator
Consumption
control
g
m
R
m
C
m
L
m
C
O
Resonator
STM8S003K3 STM8S003F3Electrical characteristics
(1)
C is approximately equivalent to 2 x crystal Cload.
(2)
The oscillator selection can be optimized in terms of supply current using a high quality resonator with
small Rmvalue. Refer to crystal manufacturer for more details
(3)
Data based on characterization results, not tested in production.
(4)
t
SU(HSE)
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
Figure 18: HSE oscillator circuit diagram
HSE oscillator critical gmequation
g
mcrit
= (2 × Π × f
)2× Rm(2Co + C)
HSE
2
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1= CL2= C: Grounded external capacitance
gm>> g
mcrit
Internal clock sources and timing characteristics9.3.4
Subject to general operating conditions for VDDand TA.
High speed internal RC oscillator (HSI)
Table 33: HSI oscillator characteristics
UnitMaxTypMinConditionsParameterSymbol
HSI
Frequencyf
DocID018576 Rev 362/100
MHz16
Electrical characteristicsSTM8S003K3 STM8S003F3
UnitMaxTypMinConditionsParameterSymbol
ACC
HSI
Accuracy of HSI
oscillator
Accuracy of HSI
oscillator (factory
User-trimmed with
CLK_HSITRIMR register for
given VDDand T
conditions
A
(1)
VDD= 5 V,
-40 °C ≤ TA≤ 85 °C
calibrated)
t
su(HSI)
HSI oscillator
wakeup time
including
calibration
I
DD(HSI)
HSI oscillator
power
consumption
(1)
Refer to application note.
(2)
Data based on characterization results, not tested in production.
(3)
Guaranteed by design, not tested in production.
170
5-5
1.0
1.0
250
(3)
(3)
(2)
%
μs
μA
Figure 19: Typical HSI frequency variation vs VDD@ 4 temperatures
63/100DocID018576 Rev 3
Low speed internal RC oscillator (LSI)
Subject to general operating conditions for VDDand TA.
Table 34: LSI oscillator characteristics
STM8S003K3 STM8S003F3Electrical characteristics
UnitMaxTypParameterSymbol
LSI
su(LSI)
DD(LSI)
Frequencyf
LSI oscillator wake-up timet
LSI oscillator power consumptionI
Figure 20: Typical LSI frequency variation vs VDD@ 4 temperatures
kHz128
μs7
μA5
Memory characteristics9.3.5
RAM and hardware registers
Table 35: RAM and hardware registers
UnitMinConditionsParameterSymbol
V
RM
(1)
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)
Data retention mode
(1)
Halt mode (or reset)
or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.
(2)
Refer to the Operating conditions section for the value of V
DocID018576 Rev 364/100
IT-max
V
IT-max
(2)
V
Flash program memory and data EEPROM
Table 36: Flash program memory and data EEPROM
ConditionsParameterSymbol
Min
(1)
Electrical characteristicsSTM8S003K3 STM8S003F3
UnitMaxTyp
V
DD
t
prog
t
erase
N
RW
t
RET
Operating voltage (all
modes, execution/
write/erase)
Standard programming time
(including erase) for
byte/word/block (1 byte/
4 bytes/64 bytes)
Fast programming time for
1 block (64 bytes)
Erase time for 1 block
(64 bytes)
Erase/write cycles
(2)
(program memory)
Erase/write cycles
(2)
(data memory)
Data retention (program
memory) after 100
erase/write cycles at TA=
85 °C
Data retention (data
memory) after 10 k
erase/write cycles at TA=
85 °C
f
≤ 16 MHz
CPU
TA= 85 °C
T
= 55°C
RET
100
100 k
20
20
V5.52.95
6.66
ms
3.333
3.333
cycles
years
Data retention (data
memory) after 100 k
erase/write cycles at TA=
T
RET
= 85°C
1
85 °C
I
DD
Supply current (Flash
programming or erasing
mA2
for 1 to 128 bytes)
65/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Electrical characteristics
(1)
Data based on characterization results, not tested in production.
(2)
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
even when a write/erase operation addresses a single byte.
I/O port pin characteristics9.3.6
General characteristics
Subject to general operating conditions for VDDand TAunless otherwise specified. All unused
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Table 37: I/O static characteristics
UnitMaxTypMinConditionsParameterSymbol
V
IL
V
IH
V
hys
R
pu
tR, t
I
lkg
I
lkg ana
I
lkg(inj)
Input low level voltage
VDD= 5 V
-0.3 V
0.3 x
V
DD
V
VDD+
0.3
(2)
20
125
mV700
kΩ805530
ns
(2)
SS
0.7 x
V
DD
Input high level voltage
Hysteresis
Pull-up resistor
F
Rise and fall time
(10 % - 90 %)
(1)
VDD= 5 V, VIN= V
Fast I/Os
Load = 50 pF
Standard and high sink
I/Os
Load = 50 pF
Digital input leakage current
Analog input leakage current
Leakage current in adjacent
I/O
VSS≤ VIN≤V
VSS≤ VIN≤ V
DD
DD
Injection current ±4 mA
(2)
±1
±250
(2)
±1
(2)
μA
nA
μA
(1)
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not
tested in production.
(2)
Data based on characterisation results, not tested in production.
Figure 35: Typical NRST pull-up resistance vs VDD@ 4 temperatures
DocID018576 Rev 376/100
0.1 µF
External
reset
circuit
STM8
Filter
R
PU
V
DD
Internal reset
NRST
(optional)
Electrical characteristicsSTM8S003K3 STM8S003F3
Figure 36: Typical NRST pull-up current vs VDD@ 4 temperatures
The reset network shown in the following figure protects the device against parasitic resets.
The user must ensure that the level on the NRST pin can go below V
IL(NRST)
max. (see
#unique_55/CD662 ), otherwise the reset is not taken into account internally.
For power consumption sensitive applications, the external reset capacitor value can be
reduced to limit the charge/discharge current. If NRST signal is used to reset external circuitry,
attention must be taken to the charge/discharge time of the external capacitor to fulfill the
external devices reset timing conditions. Minimum recommended capacity is 10 nF.
Figure 37: Recommended reset pin protection
SPI serial peripheral interface9.3.8
Unless otherwise specified, the parameters given in the following table are derived from tests
performed under ambient temperature, f
t
MASTER
= 1/f
MASTER
.
MASTER
Refer to I/O port characteristics for more details on the input/output alternate function
characteristics (NSS, SCK, MOSI, MISO).
frequency and VDDsupply voltage conditions.
77/100DocID018576 Rev 3
Table 42: SPI characteristics
STM8S003K3 STM8S003F3Electrical characteristics
f
1/
SCK
t
c(SCK)
f
1/
SCK
t
c(SCK)
t
r(SCK)
t
f(SCK)
su(NSS)
h(NSS)
t
w(SCKH)
t
w(SCKL)
t
su(MI)
t
su(SI)
t
h(MI)
t
h(SI)
t
a(SO)
t
dis(SO)
(3)
(3)
(3)
(3)
(3)
(3) (4)
(3) (5)
(3)
(3)
(3)
ParameterSymbol
frequency
1/ t
SCK
c(SCK)
fall time
time
time
time
access time
disable time
Conditions
Master modeSPI clock
SPI clock frequencyf
Capacitive load: C = 30 pFSPI clock rise and
Slave modeNSS setup timet
Master modeSCK high and low
Slave modeData output
Slave modeData output
(1)
0
4 x
t
MASTER
70Slave modeNSS hold timet
t
/
SCK
2 - 15
5Master modeData input setup
5Slave mode
7Master modeData input hold
10Slave mode
25
(2)
25
t
/
SCK
2 +15
3 x
t
MASTER
UnitMaxMin
MHz80
MHz7
ns
t
v(SO)
t
v(MO)
t
h(SO)
t
h(MO)
(3)
(3)
(3)
(3)
Data output valid
time
Data output valid
time
Data output hold
time
Data output hold
time
Slave mode
(after enable edge)
Master mode
(after enable edge)
Slave mode
(after enable edge)
Master mode
(after enable edge)
DocID018576 Rev 378/100
27
11
(2)
(2)
65
30
(2)
ai14134
SCK Input
CPHA=0
MOSI
INPUT
MISO
OUT PUT
CPHA=0
MSB O UT
MSB IN
BIT6 OUT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
NSSinput
t
SU(NSS)
t
c(SCK)
t
h(NSS)
t
a(SO)
t
w(SCKH)
t
w(SCKL)
t
v(SO)
t
h(SO)
t
r(SCK)
t
f(SCK)
t
dis(SO)
t
su(SI)
t
h(SI)
ai14135
SCK Input
CPHA=1
MOSI
INPUT
MISO
OUT PUT
CPHA=1
MSB O UT
MSB IN
BIT6 OUT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
t
SU(NSS)
t
c(SCK)
t
h(NSS)
t
a(SO)
t
w(SCKH)
t
w(SCKL)
t
v(SO)
t
h(SO)
t
r(SCK)
t
f(SCK)
t
dis(SO)
t
su(SI)
t
h(SI)
NSS input
Electrical characteristicsSTM8S003K3 STM8S003F3
(1)
Parameters are given by selecting 10 MHz I/O output frequency.
(2)
Data characterization in progress.
(3)
Values based on design simulation and/or characterization results, and not tested in
production.
(4)
Min time is for the minimum time to drive the output and the max time is for the maximum
time to validate the data.
(5)
Min time is for the minimum time to invalidate the output and the max time is for the
1. Measurement points are made at CMOS levels: 0.3 VDD and 0.7 VDD.
79/100DocID018576 Rev 3
ai14136b
SCK intput
CPHA=0
MOSI
OUTUT
MISO
INPUT
CPHA=0
MSBIN
MSB OUT
BIT6 IN
LSB OUT
LSB IN
CPOL=0
CPOL=1
BIT1 OUT
NSSinput
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
r(SCK)
t
f(SCK)
t
h(MI)
High
SCK output
CPHA=1
CPHA=1
CPOL=0
CPOL=1
t
su(MI)
t
v(MO)
t
h(MO)
STM8S003K3 STM8S003F3Electrical characteristics
Figure 40: SPI timing diagram - master mode
(1)
w(SCLL)
w(SCLH)
su(SDA)
h(SDA)
t
r(SDA)
t
r(SCL)
t
f(SDA)
t
f(SCL)
h(STA)
su(STA)
1. Measurement points are made at CMOS levels: 0.3 VDD and 0.7 VDD.
I2C interface characteristics9.3.9
Table 43: I2C characteristics
ParameterSymbol
SDA data hold timet
Standard mode I2C
(2)
Min
(3)
0
DocID018576 Rev 380/100
Max
(2)
Fast mode I2C
(2)
Min
Max
1.34.7SCL clock low timet
0.64.0SCL clock high timet
100250SDA setup timet
(4)
0
900
3001000SDA and SCL rise time
300300SDA and SCL fall time
0.64.0START condition hold timet
0.64.7Repeated START condition setup timet
(2)
(3)
(1)
Unit
μs
ns
μs
t
f(SDA)
t
r(SDA)
t
su(SDA)th(SDA)
t
f(SCL)
t
r(SCL)
t
w(SCLL)
t
w(SCLH)
t
h(STA)
t
su(STO)
t
su(STA)tw(STO:STA)
SDA
SCL
4.7kΩ
SDA
SCL
100Ω
100Ω
4.7kΩ
I2C bus
START
START
STOP
REPEATED
START
STM8S
V
DD
V
DD
ai17490
Electrical characteristicsSTM8S003K3 STM8S003F3
(2)
(1)
Unit
su(STO)
t
w(STO:STA)
ParameterSymbol
STOP to START condition time
Standard mode I2C
(2)
Min
Max
Fast mode I2C
Min
(2)
(2)
0.64.0STOP condition setup timet
Max
(bus free)
b
(1)
f
MASTER
(2)
Data based on standard I2C protocol requirement, not tested in production
(3)
The maximum hold time of the start condition has only to be met if the interface does not stretch the
, must be at least 8 MHz to achieve max fast I2C speed (400kHz)
low time
(4)
The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge
the undefined region of the falling edge of SCL
Figure 41: Typical application with I2C bus and timing diagram
μs1.34.7
pF400400Capacitive load for each bus lineC
1. Measurement points are made at CMOS levels: 0.3 x VDD and 0.7 x VDD.
10-bit ADC characteristics9.3.10
Subject to general operating conditions for VDD, f
MASTER
, and TAunless otherwise specified.
81/100DocID018576 Rev 3
Table 44: ADC characteristics
STM8S003K3 STM8S003F3Electrical characteristics
UnitMaxTypMinConditionsParameterSymbol
ADC
V
AIN
C
ADC
(1)
S
STAB
t
CONV
Conversion voltage range
Internal sample and hold
capacitor
(including sampling time,
10-bit resolution)
(1)
ADC
ADC
ADC
ADC
= 4 MHzMinimum sampling timet
= 6 MHz
= 4 MHzMinimum total conversion time
= 6 MHz
V
14
SS
41VDD=2.95 to 5.5 VADC clock frequencyf
MHz
61VDD=4.5 to 5.5 V
VV
DD
pF3
0.75f
μs
0.5f
μs7Wake-up time from standbyt
μs3.5f
μs2.33f
1/f
ADC
(1)
During the sample time the input capacitance C
(3 pF max) can be charged/discharged
AIN
by the external source. The internal resistance of the analog source must allow the
capacitance to reach its final voltage level within tS.After the end of the sample time tS,
changes of the analog input voltage have no effect on the conversion result. Values for the
sample clock tSdepend on programming.
|ET|
Table 45: ADC accuracy with R
(2)
< 10 kΩ , VDD= 5 V
AIN
= 2 MHzTotal unadjusted error
ADC
= 4 MHz
ADC
(1)
TypConditionsParameterSymbol
UnitMax
3.51.6f
42.2f
LSB
4.52.4f
2.51.1f
|EO|
(2)
= 6 MHz
ADC
= 2 MHzOffset error
ADC
DocID018576 Rev 382/100
Electrical characteristicsSTM8S003K3 STM8S003F3
(1)
TypConditionsParameterSymbol
UnitMax
|EG|
|ED|
|EL|
(2)
(2)
(2)
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
= 4 MHz
= 6 MHz
= 2 MHzGain error
= 4 MHz
= 6 MHz
= 2 MHzDifferential linearity error
= 4 MHz
= 6 MHz
= 2 MHzIntegral linearity error
= 4 MHz
31.5f
31.8f
31.5f
32.1f
42.2f
1.50.7f
1.50.7f
1.50.7f
1.50.6f
20.8f
= 6 MHz
ADC
(1)
Data based on characterization results, not tested in production.
(2)
ADC accuracy vs. negative injection current: Injecting negative current on any of the
20.8f
analog input pins should be avoided as this significantly reduces the accuracy of the
conversion being performed on another analog input. It is recommended to add a Schottky
diode (pin to ground) to standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for I
INJ(PIN)
and ΣI
INJ(PIN)
in the I/O
port pin characteristics section does not affect the ADC accuracy.
|ET|
|EO|
Table 46: ADC accuracy with R
(2)
(2)
ADC
ADC
ADC
< 10 kΩ R
AIN
= 2 MHzTotal unadjusted error
= 4 MHz
= 2 MHzOffset error
, VDD= 3.3 V
AIN
TypConditionsParameterSymbol
(1)
UnitMax
3.51.6f
41.9f
LSB
2.51f
83/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Electrical characteristics
(1)
TypConditionsParameterSymbol
UnitMax
= 4 MHz
ADC
|EG|
|ED|
|EL|
(1)
Data based on characterization results, not tested in production.
(2)
ADC accuracy vs. negative injection current: Injecting negative current on any of the
(2)
(2)
(2)
ADC
ADC
ADC
ADC
ADC
ADC
= 2 MHzGain error
= 4 MHz
= 2 MHzDifferential linearity error
= 4 MHz
= 2 MHzIntegral linearity error
= 4 MHz
2.51.5f
31.3f
32f
10.7f
1.50.7f
1.50.6f
20.8f
analog input pins should be avoided as this significantly reduces the accuracy of the
conversion being performed on another analog input. It is recommended to add a Schottky
diode (pin to ground) to standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for I
INJ(PIN)
and ΣI
INJ(PIN)
in I/O port
pin characteristics does not affect the ADC accuracy.
Figure 42: ADC accuracy characteristics
1. Example of an actual transfer curve.
2. The ideal transfer curve
DocID018576 Rev 384/100
STM8
10-bit A/D
conversion
R
AIN
C
AIN
V
AIN
AINx
V
DD
V
T
0.6 V
V
T
0.6 V
I
L
± 1 µA
C
ADC
Electrical characteristicsSTM8S003K3 STM8S003F3
3. End point correlation line
ET= Total unadjusted error: maximum deviation between the actual and the ideal transfer
curves.
EO= Offset error: deviation between the first actual transition and the first ideal one.
EG= Gain error: deviation between the last ideal transition and the last actual one.
ED= Differential linearity error: maximum deviation between actual steps and the ideal
one.
EL= Integral linearity error: maximum deviation between any actual transition and the end
point correlation line.
Figure 43: Typical application with ADC
EMC characteristics9.3.11
Susceptibility tests are performed on a sample basis during product characterization.
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
•
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to VDDand V
•
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
Designing hardened software to avoid noise problems9.3.11.2
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
85/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Electrical characteristics
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Table 47: EMS data
ConditionsParameterSymbol
Level/
class
V
FESD
Voltage limits to be
applied on any I/O pin to
induce a functional
VDD= 3.3 V, TA= 25 °C, f
MASTER
= 16 MHz
(HSI clock), conforming to IEC 61000-4-2
2/B
(1)
disturbance
V
EFTB
Fast transient voltage
burst limits to be applied
through 100 pF on V
DD
and VSSpins to induce a
VDD= 3.3 V, TA= 25 °C ,f
MASTER
= 16 MHz
(HSI clock),conforming to IEC 61000-4-4
4/A
(1)
functional disturbance
(1)
Data obtained with HSI clock configuration, after applying HW recommendations described
in AN2860 (EMC guidelines for STM8S microcontrollers).
Electromagnetic interference (EMI)9.3.11.3
Based on a simple application running on the product (toggling 2 LEDs through the I/O ports),
the product is monitored in terms of emission. This emission test is in line with the norm SAE
IEC 61967-2 which specifies the board and the loading of each pin.
Table 48: EMI data
Conditions
Max f
ParameterSymbol
General
conditions
Monitored
frequency band
HSE/fCPU
16 MHz/
8 MHz
Peak level
S
EMI
VDD= 5 V
TA= 25 °C
LQFP32
package
DocID018576 Rev 386/100
0.1 MHz to
30 MHz
30 MHz to
(1)
Unit
16 MHz/
16 MHz
55
dBμV
54
Conditions
Electrical characteristicsSTM8S003K3 STM8S003F3
Max f
ParameterSymbol
General
conditions
Monitored
frequency band
HSE/fCPU
16 MHz/
8 MHz
Conforming to
130 MHz
(1)
Unit
16 MHz/
16 MHz
SAE IEC
61967-2
130 MHz to
55
1 GHz
SAE EMI
level
(1)
Data based on characterisation results, not tested in production.
SAE EMI level
2.52.5
Absolute maximum ratings (electrical sensitivity)9.3.11.4
Based on three different tests (ESD, DLU and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)9.3.11.5
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied
to the pins of each sample according to each pin combination. The sample size depends on
the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated:
Human body model. This test conforms to the JESD22-A114A/A115A standard. For more
details, refer to the application note AN1181.
Table 49: ESD absolute maximum ratings
(1)
UnitMaximum
V
V
ESD(HBM)
V
ESD(CDM)
(Human body model)
ClassConditionsRatingsSymbol
value
TA= 25°C, conforming toElectrostatic discharge
JESD22-A114voltage
4000A
TALQFP32 package =Electrostatic discharge
25°C, conforming tovoltage
1000IV
SD22-C101(Charge device model)
87/100DocID018576 Rev 3
STM8S003K3 STM8S003F3Electrical characteristics
(1)
Data based on characterization results, not tested in production
Static latch-up9.3.11.6
Two complementary static tests are required on 10 parts to assess the latch-up performance:
A supply overvoltage (applied to each power supply pin)
•
A current injection (applied to each input, output and configurable I/O pin) are performed
•
on each sample.
This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the
application note AN1181.
Table 50: Electrical sensitivities
ConditionsParameterSymbol
Static latch-up classLU
(1)
Class description: A Class is an STMicroelectronics internal specification. All its limits
are higher than the JEDEC specifications, that means when a device belongs to class A it
exceeds the JEDEC standard. B class strictly covers all the JEDEC criteria (international
standard).
Class
ATA= 25 °C
ATA= 85 °C
(1)
DocID018576 Rev 388/100
5V_ME
L
A1K
L1
c
A
A2
ccc
C
D
D1
D3
E3
E1 E
16
17
24
25
b
32
1
Pin 1
identification
8
9
Package informationSTM8S003K3 STM8S003F3
Package information10
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK®packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 53: 20-lead ultra thin fine pitch quad flat no-lead package (3x3) mechanical data
mmDim.
inches
(1)
MaxTypMinMaxTypMin
0.11813.000D
0.11813.000E
0.02360.02170.01970.6000.5500.500A
0.00200.00080.00000.0500.0200.000A1
0.00600.152A3
0.01970.500e
0.02360.02170.01970.6000.5500.500L1
0.01570.01380.01180.4000.3500.300L2
0.00590.150L3
0.00790.200L4
DocID018576 Rev 392/100
0.01180.00980.00710.3000.2500.180b
Package informationSTM8S003K3 STM8S003F3
mmDim.
inches
(1)
0.00200.050ddd
(1)
Values in inches are converted from mm and rounded to 4 decimal digits.
MaxTypMinMaxTypMin
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STM8S003K3 STM8S003F3Thermal characteristics
Thermal characteristics11
The maximum chip junction temperature (T
Operating conditions.
The maximum chip-junction temperature, T
the following equation:
T
= T
Jmax
Where:
T
Amax
•
ΘJAis the package junction-to-ambient thermal resistance in °C/W
•
P
Dmax
•
P
INTmax
•
power.
P
I/Omax
•
Where: P
VOH/IOHof the I/Os at low and high level in the application.
Symbol
Θ
JA
+ (P
Amax
is the maximum ambient temperature in °C
is the sum of P
is the product of IDDandVDD, expressed in Watts. This is the maximum chip internal
represents the maximum power dissipation on output pins
I/Omax
TSSOP20 - 4.4 mm
x ΘJA)
Dmax
and P
INTmax
=Σ (VOL*IOL) + Σ((VDD-VOH)*IOH), taking into account the actual VOL/I
Table 54: Thermal characteristics
(1)
I/Omax
) must never exceed the values given in
J max
, in degrees Celsius, may be calculated using
Jmax
(PDmax = P
INTmax
+ P
I/Omax
)
OL and
UnitValueParameter
°C/W84Thermal resistance junction-ambient
JA
Θ
JA
(1)
Thermal resistances are based on JEDEC JESD51-2 with 4-layer PCB in a natural
convection environment.
Thermal resistance junction-ambientΘ
UFQFPN20 - 3 x 3 mm
LQFP32 - 7 x 7 mm
90
60Thermal resistance junction-ambient
Reference document11.1
JESD51-2 integrated circuits thermal test method environment conditions - natural convection
(still air). Available from www.jedec.org.
Selecting the product temperature range11.2
When ordering the microcontroller, the temperature range is specified in the order code.
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Thermal characteristicsSTM8S003K3 STM8S003F3
The following example shows how to calculate the temperature range needed for a given
application.
Assuming the following application conditions:
Maximum ambient temperature T
•
I
= 8 mA, VDD= 5 V
DDmax
•
Maximum 20 I/Os used at the same time in output at low level with
•
IOL= 8 mA, VOL= 0.4 V
= 75 °C (measured according to JESD51-2)
Amax
P
INTmax =
Amax
P
Dmax =
•
Thus: P
T
Jmax
T
Jmax
This is within the range of the suffix 6 version parts (-40 < TJ< 105 °C).
In this case, parts must be ordered at least with the temperature range suffix 6.
8 mA x 5 V = 400 mW
400
Dmax
for LQFP32 can be calculated as follows, using the thermal resistance ΘJA:
= 75 °C + (60 °C/W x 464 mW) = 75 °C + 27.8 °C = 102.8 °C
64 mW
mW +
= 464 mW
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Pin count
K = 32 pins
F = 20 pins
Example:
Sub-family type
00x = Value line
003 sub-family
Family type
S = Standard
Temperature range
6 = -40 °C to 85 °C
Program memory size
3 = 8 Kbytes
Packing
No character = Tray or tube
TR = Tape and reel
Package pitch
Blank = 0.5 or 0.65 mm(
1)
C = 0.8 mm
(2)
STM8 S003 K3T6TR
Product class
STM8 microcontroller
Package type 1
P = TSSOP
T = LQFP
U = UFQFPN
STM8S003K3 STM8S003F3Ordering information
Ordering information12
Figure 47: STM8S003x value line ordering information scheme
1. TSSOP and UFQFPN package.
2. LQFP package.
For a list of available options (e.g. package, packing) and orderable part numbers or for further
information on any aspect of this device, please go to www.st.com or contact the ST Sales
Office nearest to you.
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STM8 development toolsSTM8S003K3 STM8S003F3
STM8 development tools13
Development tools for the STM8 microcontrollers include the full-featured STice emulation
system supported by a complete software tool package including C compiler, assembler and
integrated development environment with high-level language debugger. In addition, the
STM8 is to be supported by a complete range of tools including starter kits, evaluation boards
and a low-cost in-circuit debugger/programmer.
Emulation and in-circuit debugging tools13.1
The STice emulation system offers a complete range of emulation and in-circuit debugging
features on a platform that is designed for versatility and cost-effectiveness. In addition, STM8
application development is supported by a low-cost in-circuit debugger/programmer.
The STice is the fourth generation of full featured emulators from STMicroelectronics. It offers
new advanced debugging capabilities including profiling and coverage to help detect and
eliminate bottlenecks in application execution and dead code when fine tuning an application.
In addition, STice offers in-circuit debugging and programming of STM8 microcontrollers via
the STM8 single wire interface module (SWIM), which allows non-intrusive debugging of an
application while it runs on the target microcontroller.
For improved cost effectiveness, STice is based on a modular design that allows you to order
exactly what you need to meet your development requirements and to adapt your emulation
system to support existing and future ST microcontrollers.
STice key features
Occurrence and time profiling and code coverage (new features)
•
Advanced breakpoints with up to 4 levels of conditions
•
Data breakpoints
•
Program and data trace recording up to 128 KB records
•
Read/write on the fly of memory during emulation
•
In-circuit debugging/programming via SWIM protocol
•
8-bit probe analyzer
•
1 input and 2 output triggers
•
Power supply follower managing application voltages between 1.62 to 5.5 V
•
Modularity that allows you to specify the components you need to meet your development
•
requirements and adapt to future requirements
Supported by free software tools that include integrated development environment (IDE),
•
programming software interface and assembler for STM8.
Software tools13.2
STM8 development tools are supported by a complete, free software package from
STMicroelectronics that includes ST Visual Develop (STVD) IDE and the ST Visual
Programmer (STVP) software interface. STVD provides seamless integration of the Cosmic
and Raisonance C compilers for STM8, which are available in a free version that outputs up
to 16 Kbytes of code.
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STM8S003K3 STM8S003F3STM8 development tools
STM8 toolset13.2.1
STM8 toolset with STVD integrated development environment and STVP programming
software is available for free download at www.st.com/mcu. This package includes:
ST Visual Develop – Full-featured integrated development environment from ST, featuring
Seamless integration of C and ASM toolsets
•
Full-featured debugger
•
Project management
•
Syntax highlighting editor
•
Integrated programming interface
•
Support of advanced emulation features for STice such as code profiling and coverage
•
ST Visual Programmer (STVP) – Easy-to-use, unlimited graphical interface allowing read,
write and verify of your STM8 microcontroller’s Flash program memory, data EEPROM and
option bytes. STVP also offers project mode for saving programming configurations and
automating programming sequences.
C and assembly toolchains13.2.2
Control of C and assembly toolchains is seamlessly integrated into the STVD integrated
development environment, making it possible to configure and control the building of your
application directly from an easy-to-use graphical interface.
Available toolchains include:
Cosmic C compiler for STM8 – Available in a free version that outputs up to 16 Kbytes
•
of code. For more information, see www.cosmic-software.com.
Raisonance C compiler for STM8 – Available in a free version that outputs up to
•
16 Kbytes of code. For more information, see www.raisonance.com.
STM8 assembler linker – Free assembly toolchain included in the STVD toolset, which
•
allows you to assemble and link your application source code.
Programming tools13.3
During the development cycle, STice provides in-circuit programming of the STM8 Flash
microcontroller on your application board via the SWIM protocol. Additional tools are to include
a low-cost in-circuit programmer as well as ST socket boards, which provide dedicated
programming platforms with sockets for programming your STM8.
For production environments, programmers will include a complete range of gang and
automated programming solutions from third-party tool developers already supplying
programmers for the STM8 family.
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Revision historySTM8S003K3 STM8S003F3
Revision history14
Table 55: Document revision history
ChangesRevisionDate
Initial revision.112-Jul-2011
209-Jan-2012
Added NRWand t
for data EEPROM in Table 36:
RET
Flash program memory and data EEPROM.
Updated RPUin Table 41: NRST pin characteristics and
Table 37: I/O static characteristics.
Updated notes related to V
in Table 18: General
CAP
operating conditions.
312-Jun-2012
Updated temperature condition for factory calibrated
ACC
in Table 33: HSI oscillator characteristics.
HSI
Changed SCK input to SCK output in Figure 40: SPI
timing diagram - master mode(1)
Modified Figure 46: 20-lead ultra thin fine pitch quad flat
no-lead package outline (3x3) to add package top view.
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STM8S003K3 STM8S003F3
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