Value Line, 8-bit ultralow power MCU, 32-KB Flash,
256-byte data EEPROM, RTC, LCD, timers, USART, I2C, SPI, ADC
Datasheet − production data
Features
■ Operating conditions
– Operating power supply: 1.8 V to 3.6 V
– Temperature range: -40 °C to 85 °C
■ Low power features
– 5 low power modes: Wait, Low power run
(5.1 µA), Low power wait (3 µA), Active-halt
with full RTC (1.3 µA), Halt (350 nA)
– Consumption: 195 µA/MHz + 440 µA
– Ultra-low leakage per I/0: 50 nA
– Fast wakeup from Halt: 4.7 µs
■ Advanced STM8 core
– Harvard architecture and 3-stage pipeline
– Max freq. 16 MHz, 16 CISC MIPS peak
– Up to 40 external interrupt sources
■ Reset and supply management
– Low power, ultra-safe BOR reset with 5
selectable thresholds
– Ultra low power POR/PDR
– Programmable voltage detector (PVD)
■ Clock management
– 32 kHz and 1 to 16 MHz crystal oscillator
– Internal 16 MHz factory-trimmed RC
– Internal 38 kHz low consumption RC
– Clock security system
■ Low power RTC
– BCD calendar with alarm interrupt
– Auto-wakeup from Halt w/ periodic interrupt
■ LCD: up to 4x28 segments w/ step-up
converter
■ Memories
– 32 KB Flash program memory and
256 bytes data EEPROM with ECC, RWW
– Flexible write and read protection modes
– 2 Kbytes of RAM
■ DMA
– 4 channels supporting ADC, SPI, I2C,
USART, timers
– 1 channel for memory-to-memory
■ 12-bit ADC up to 1 Msps/25 channels
– Internal reference voltage
■ Timers
– Two 16-bit timers with 2 channels (used as
IC, OC, PWM), quadrature encoder
– One 16-bit advanced control timer with 3
channels, supporting motor control
– One 8-bit timer with 7-bit prescaler
– 2 watchdogs: 1 Window, 1 Independent
– Beeper timer with 1, 2 or 4 kHz frequencies
■ Communication interfaces
– Synchronous serial interface (SPI)
2
–Fast I
C 400 kHz SMBus and PMBus
– USART (ISO 7816 interface and IrDA)
■ Up to 41 I/Os, all mappable on interrupt vectors
■ Development support
– Fast on-chip programming and non-
intrusive debugging with SWIM
– Bootloader using USART
June 2012Doc ID 023331 Rev 11/102
This is information on a product in full production.
This document describes the features, pinout, mechanical data and ordering information of
the medium density value line STM8L052C6 microcontroller with 32-Kbyte Flash memory
density. For further details on the whole STMicroelectronics medium density family please
refer to Section 2.2: Ultra low power continuum.
For detailed information on device operation and registers, refer to the reference manual
(RM0031).
For information on to the Flash program memory and data EEPROM, refer to the
programming manual (PM0054).
For information on the debug module and SWIM (single wire interface module), refer to the
STM8 SWIM communication protocol and debug module user manual (UM0470).
For information on the STM8 core, refer to the STM8 CPU programming manual (PM0044).
Medium density value line devices provide the following benefits:
●Integrated system
–32 Kbytes of medium density embedded Flash program memory
–256 bytes of data EEPROM
–2 Kbytes of RAM
–Internal high speed and low-power low speed RC
–Embedded reset
●Ultra low power consumption
–195 µA/MHZ + 440 µA (consumption)
–0.9 µA with LSI in Active-halt mode
–Clock gated system and optimized power management
–Capability to execute from RAM for Low power wait mode and low power run mode
●Advanced features
–Up to 16 MIPS at 16 MHz CPU clock frequency
–Direct memory access (DMA) for memory-to-memory or peripheral-to-memory
access
●Short development cycles
–Application scalability across a common family product architecture with
compatible pinout, memory map and modular peripherals
–Wide choice of development tools
Refer to Table 1: Medium density value line STM8L05xxx low power device features and
peripheral counts and Section 3: Functional overview for an overview of the complete range
of peripherals proposed in this family.
Figure 1 shows the block diagram of the medium density value line STM8L05xxx family.
8/102Doc ID 023331 Rev 1
STM8L052C6Description
2 Description
The medium density value line STM8L05xxx devices are members of the STM8L ultra low
power 8-bit family.
The value line STM8L05xxx ultra low power family features the enhanced STM8 CPU core
providing increased processing power (up to 16 MIPS at 16 MHz) while maintaining the
advantages of a CISC architecture with improved code density, a 24-bit linear addressing
space and an optimized architecture for low power operations.
The family includes an integrated debug module with a hardware interface (SWIM) which
allows non-intrusive In-application debugging and ultra-fast Flash programming.
Medium density value line STM8L05xxx microcontrollers feature embedded data EEPROM
and low-power, low-voltage, single-supply program Flash memory.
All devices offer 12-bit ADC, real-time clock, 16-bit timers, one 8-bit timer as well as
standard communication interface such as SPI, I2C, USART and 4x28-segment LCD. The
4x 28-segment LCD is available on the medium density value line STM8L05xxx.
The STM8L05xxx family operates from 1.8 V to 3.6 V and is available in the
temperature range.
The modular design of the peripheral set allows the same peripherals to be found in different
ST microcontroller families including 32-bit families. This makes any transition to a different
family very easy, and simplified even more by the use of a common set of development
tools.
All value line STM8L ultra low power products are based on the same architecture with the
same memory mapping and a coherent pinout.
-40 to +85 °C
Doc ID 023331 Rev 19/102
DescriptionSTM8L052C6
2.1 Device overview
Table 1.Medium density value line STM8L05xxx low power device features and
peripheral counts
FeaturesSTM8L052C6
Flash (Kbytes)32
Data EEPROM (bytes)256
RAM (Kbytes)2
LCD4x28
Basic
1
(8-bit)
Timers
General purpose
Advanced control
2
(16-bit)
1
(16-bit)
SPI1
Communication
interfaces
I2C1
USART1
GPIOs41
12-bit synchronized ADC
(number of channels)
(1)
1
(25)
RTC, window watchdog, independent watchdog,
Others
16-MHz and 38-kHz internal RC,
1- to 16-MHz and 32-kHz external oscillator
CPU frequency16 MHz
Operating voltage1.8 V to 3.6 V
Operating temperature-40 to +85 °C
PackageLQFP48
1. The number of GPIOs given in this table includes the NRST/PA1 pin but the application can use the
NRST/PA1 pin as general purpose output only (PA1).
10/102Doc ID 023331 Rev 1
STM8L052C6Description
2.2 Ultra low power continuum
The ultra low power value line STM8L05xxx and STM8L15xxx are fully pin-to-pin, software
and feature compatible. Besides the full compatibility within the STM8L family, the devices
are part of STMicroelectronics microcontrollers ultra low power strategy which also includes
STM8L101xx and STM32L15xxx. The STM8L and STM32L families allow a continuum of
performance, peripherals, system architecture, and features.
They are all based on STMicroelectronics 0.13 µm ultra-low leakage process.
Note:1The STM8L05xxx is pin-to-pin compatible with STM8L101xx devices.
2The STM32L family is pin-to-pin compatible with the general purpose STM32F family.
Please refer to STM32L15x documentation for more information on these devices.
Performance
All families incorporate highly energy-efficient cores with both Harvard architecture and
pipelined execution: advanced STM8 core for STM8L families and ARM Cortex™-M3 core
for STM32L family. In addition specific care for the design architecture has been taken to
optimize the mA/DMIPS and mA/MHz ratios.
This allows the ultra low power performance to range from 5 up to 33.3 DMIPs.
Shared peripherals
STM8L05x, STM8L15x and STM32L15xx share identical peripherals which ensure a very
easy migration from one family to another:
●Analog peripheral: ADC1
●Digital peripherals: RTC and some communication interfaces
Common system strategy
To offer flexibility and optimize performance, the STM8L and STM32L devices use a
common architecture:
●Same power supply range from 1.8 to 3.6 V
●Architecture optimized to reach ultra-low consumption both in low power modes and
Run mode
●Fast startup strategy from low power modes
●Flexible system clock
●Ultra-safe reset: same reset strategy for both STM8L and STM32L including power-on
reset, power-down reset, brownout reset and programmable voltage detector
Features
ST ultra low power continuum also lies in feature compatibility:
●More than 10 packages with pin count from 20 to 100 pins and size down to 3 x 3 mm
●Memory density ranging from 4 to 128 Kbytes
Doc ID 023331 Rev 111/102
Functional overviewSTM8L052C6
16 MHz internal RC
Clock
Clocks
Address, control and data buses
Debug module
SPI1
32 Kbytes
Interrupt controller
2 Kbytes RAM
to core and
peripherals
IWDG
(38 kHz clock)
(SWIM)
Port A
Port B
Port C
I²C1
USART1
Power
VOLT. REG.
Port F
1-16 MHz oscillator
32 kHz oscillator
38 kHz internal RC
LCD driver
4x28
WWDG
STM8 Core
controller
and
CSS
256 bytes
Port D
Port E
Beeper
RTC
memoryprogram
data EEPROM
@V
DD
V
DD18
V
DD1
=1.8 V
V
SS1
SWIM
SCL, SDA,
MOSI, MISO,
SCK, NSS
RX, TX, CK
ADC1_INx
V
DDA
V
SSA
SMB
@V
DDA/VSSA
12-bit ADC1
V
REF+
V
REF-
3.6 V
NRST
PA[7:0]
PB[7:0]
PC[7:0]
PD[7:0]
PE[7:0]
PF0
BEEP
ALARM, CALIB
SEGx, COMx
POR/PDR
OSC_IN,
OSC_OUT
OSC32_IN,
OSC32_OUT
to
BOR
PVD
PVD_IN
RESET
DMA1
8-bit Timer 4
16-bit Timer 3
16-bit Timer 2
16-bit Timer 1
(4 channels)
2 channels
2 channels
3 channels
V
LCD
= 2.5 V
3.6 V
to
LCD booster
Internal reference
voltage
VREFINT out
Infrared interface
IR_TIM
3 Functional overview
Figure 1.Medium density value line STM8L05xxx device block diagram
1. Legend:
12/102Doc ID 023331 Rev 1
ADC: Analog-to-digital converter
BOR: Brownout reset
DMA: Direct memory access
I²C: Inter-integrated circuit multimaster interface
LCD: Liquid crystal display
POR/PDR: Power on reset / power down reset
RTC: Real-time clock
SPI: Serial peripheral interface
SWIM: Single wire interface module
USART: Universal synchronous asynchronous receiver transmitter
WWDG: Window watchdog
IWDG: independent watchdog
STM8L052C6Functional overview
3.1 Low power modes
The medium density value line STM8L05xxx devices support five low power modes to
achieve the best compromise between low power consumption, short startup time and
available wakeup sources:
●Wait mode: The CPU clock is stopped, but selected peripherals keep running. An
internal or external interrupt, event or a Reset can be used to exit the microcontroller
from Wait mode (WFE or WFI mode).
●Low power run mode: The CPU and the selected peripherals are running. Execution
is done from RAM with a low speed oscillator (LSI or LSE). Flash memory and data
EEPROM are stopped and the voltage regulator is configured in ultra low power mode.
The microcontroller enters Low power run mode by software and can exit from this
mode by software or by a reset.
All interrupts must be masked. They cannot be used to exit the microcontroller from this
mode.
●Low power wait mode: This mode is entered when executing a Wait for event in Low
power run mode. It is similar to Low power run mode except that the CPU clock is
stopped. The wakeup from this mode is triggered by a Reset or by an internal or
external event (peripheral event generated by the timers, serial interfaces, DMA
controller (DMA1) and I/O ports). When the wakeup is triggered by an event, the
system goes back to Low power run mode.
All interrupts must be masked. They cannot be used to exit the microcontroller from this
mode.
●Active-halt mode: CPU and peripheral clocks are stopped, except RTC. The wakeup
can be triggered by RTC interrupts, external interrupts or reset.
●Halt mode: CPU and peripheral clocks are stopped, the device remains powered on.
The RAM content is preserved. The wakeup is triggered by an external interrupt or
reset. A few peripherals have also a wakeup from Halt capability. Switching off the
internal reference voltage reduces power consumption. Through software configuration
it is also possible to wake up the device without waiting for the internal reference
voltage wakeup time to have a fast wakeup time of 5 µs.
Doc ID 023331 Rev 113/102
Functional overviewSTM8L052C6
3.2 Central processing unit STM8
3.2.1 Advanced STM8 Core
The 8-bit STM8 core is designed for code efficiency and performance with an Harvard
architecture and a 3-stage pipeline.
It contains 6 internal registers which are directly addressable in each execution context, 20
addressing modes including indexed indirect and relative addressing, and 80 instructions.
Architecture and registers
●Harvard architecture
●3-stage pipeline
●32-bit wide program memory bus - single cycle fetching most instructions
●X and Y 16-bit index registers - enabling indexed addressing modes with or without
offset and read-modify-write type data manipulations
●8-bit accumulator
●24-bit program counter - 16-Mbyte linear memory space
●16-bit stack pointer - access to a 64-Kbyte level stack
●8-bit condition code register - 7 condition flags for the result of the last instruction
Addressing
●20 addressing modes
●Indexed indirect addressing mode for lookup tables located anywhere in the address
space
●Stack pointer relative addressing mode for local variables and parameter passing
Instruction set
●80 instructions with 2-byte average instruction size
●Standard data movement and logic/arithmetic functions
●8-bit by 8-bit multiplication
●16-bit by 8-bit and 16-bit by 16-bit division
●Bit manipulation
●Data transfer between stack and accumulator (push/pop) with direct stack access
●Data transfer using the X and Y registers or direct memory-to-memory transfers
3.2.2 Interrupt controller
The medium density value line STM8L05xxx devices feature a nested vectored interrupt
controller:
●Nested interrupts with 3 software priority levels
●32 interrupt vectors with hardware priority
●Up to 40 external interrupt sources on 11 vectors
●Trap and reset interrupts
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STM8L052C6Functional overview
3.3 Reset and supply management
3.3.1 Power supply scheme
The device requires a 1.8 V to 3.6 V operating supply voltage (VDD). The external power
supply pins must be connected as follows:
●V
●V
●V
●V
3.3.2 Power supply supervisor
The device has an integrated ZEROPOWER power-on reset (POR)/power-down reset
(PDR), coupled with a brownout reset (BOR) circuitry . At power-on, BOR is always active,
and ensures proper operation starting from 1.8 V. After the 1.8 V BOR threshold is reached,
the option byte loading process starts, either to confirm or modify default thresholds, or to
disable BOR permanently.
SS1
; V
= 1.8 to 3.6 V: external power supply for I/Os and for the internal regulator.
DD1
Provided externally through V
SSA ; VDDA
V
SSA
SS2
connected to V
REF+
externally through V
= 1.8 to 3.6 V: external power supplies for analog peripherals. V
must be connected to V
; V
= 1.8 to 3.6 V: external power supplies for I/Os. V
; V
DD2
REF-
and V
DD1
SS1
(for ADC1): external reference voltage for ADC1. Must be provided
and V
REF+
pins, the corresponding ground pin is V
DD1
DD1
and V
, respectively.
SS1
DD2
, respectively.
pin.
REF-
and V
SS1
must be
SS2
.
DDA
and
Five BOR thresholds are available through option bytes, starting from 1.8 V to 3 V. To
reduce the power consumption in Halt mode, it is possible to automatically switch off the
internal reference voltage (and consequently the BOR) in Halt mode. The device remains
under reset when V
DD
for any external reset circuit.
The device features an embedded programmable voltage detector (PVD) that monitors the
V
DD/VDDA
power supply and compares it to the V
levels between 1.85 V and 3.05 V, chosen by software, with a step around 200 mV. An
interrupt can be generated when V
V
DD/VDDA
is higher than the V
a warning message and/or put the MCU into a safe state. The PVD is enabled by software.
3.3.3 Voltage regulator
The medium density value line STM8L05xxx embeds an internal voltage regulator for
generating the 1.8 V power supply for the core and peripherals.
This regulator has two different modes:
●Main voltage regulator mode (MVR) for Run, Wait for interrupt (WFI) and Wait for event
(WFE) modes
●Low power voltage regulator mode (LPVR) for Halt, Active-halt, Low power run and Low
power wait modes
When entering Halt or Active-halt modes, the system automatically switches from the MVR
to the LPVR in order to reduce current consumption.
is below a specified threshold, V
threshold. This PVD offers 7 different
PVD
DD/VDDA
threshold. The interrupt service routine can then generate
PVD
drops below the V
POR/PDR
PVD
or V
, without the need
BOR
threshold and/or when
Doc ID 023331 Rev 115/102
Functional overviewSTM8L052C6
3.4 Clock management
The clock controller distributes the system clock (SYSCLK) coming from different oscillators
to the core and the peripherals. It also manages clock gating for low power modes and
ensures clock robustness.
Features
●Clock prescaler: To get the best compromise between speed and current
consumption the clock frequency to the CPU and peripherals can be adjusted by a
programmable prescaler.
●Safe clock switching: Clock sources can be changed safely on the fly in run mode
through a configuration register.
●Clock management: To reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
●System clock sources: 4 different clock sources can be used to drive the system
clock:
–1-16 MHz High speed external crystal (HSE)
–16 MHz High speed internal RC oscillator (HSI)
–32.768 kHz Low speed external crystal (LSE)
–38 kHz Low speed internal RC (LSI)
●RTC and LCD clock sources: The above four sources can be chosen to clock the
RTC and the LCD, whatever the system clock.
●Startup clock: After reset, the microcontroller restarts by default with an internal
2 MHz clock (HSI/8). The prescaler ratio and clock source can be changed by the
application program as soon as the code execution starts.
●Clock security system (CSS): This feature can be enabled by software. If a HSE clock
failure occurs, the system clock is automatically switched to HSI.
●Configurable main clock output (CCO): This outputs an external clock for use by the
application.
16/102Doc ID 023331 Rev 1
STM8L052C6Functional overview
HSE OSC
1-16 MHz
HSI RC
16 MHz
LSI RC
38 kH z
LSE OSC
32 768 k
H
z
HSI
LSI
RTC
prescaler
/1;2;4;8;16;32;64
PCLK
to peripherals
RTCCLK/2
to LCD
to IWDG
SYSCLK
HSE
(1)
(2)
LSI
LSE
OSC_OUT
OSC32_OUT
OSC_IN
OSC32_IN
clock output
CCO
prescaler
/1;2;4;8;16;32;64
HSI
LSI
HSE
LSE
CCO
to core and
memory
SYSCLK
Presc aler
/1;2;4;8;16;32;64;128
IWDGCLK
RTCSEL[3:0]
LSE
(2)
CLKBEEPSEL[1:0]
to BEEP
BEEPCLK
CSS
configurable
.
/ 2
Peripheral
Clock enable (15 bits)
to RTC
RTCCLK
clock enable (1 bit)
LCDCLK
to LCD
SYSCLK
Halt
clock enable (1 bit)
LCD peripheral
RTCCLK
LCD peripheral
(1)
(2)
Figure 2.Medium density value line STM8L05xxx clock tree diagram
1. The HSE clock source can be either an external crystal/ceramic resonator or an external source (HSE
bypass). Refer to Section HSE clock in the STM8L15x and STM8L16x reference manual (RM0031).
2. The LSE clock source can be either an external crystal/ceramic resonator or a external source (LSE
bypass). Refer to Section LSE clock in the STM8L15x and STM8L16x reference manual (RM0031).
3.5 Low power real-time clock
The real-time clock (RTC) is an independent binary coded decimal (BCD) timer/counter.
Six byte locations contain the second, minute, hour (12/24 hour), week day, date, month,
year, in BCD (binary coded decimal) format. Correction for 28, 29 (leap year), 30, and 31
day months are made automatically.
It provides a programmable alarm and programmable periodic interrupts with wakeup from
Halt capability.
●Periodic wakeup time using the 32.768 kHz LSE with the lowest resolution (of 61 µs) is
from min. 122 µs to max. 3.9 s. With a different resolution, the wakeup time can reach
36 hours.
●Periodic alarms based on the calendar can also be generated from every second to
every year.
Doc ID 023331 Rev 117/102
Functional overviewSTM8L052C6
3.6 LCD (Liquid crystal display)
The LCD is only available on STM8L052xx devices.
●The liquid crystal display drives up to 4 common terminals and up to 28 segment
terminals to drive up to 112 pixels. Internal step-up converter to guarantee contrast
control whatever V
●Static 1/2, 1/3, 1/4 duty supported.
●Static 1/2, 1/3, bias supported.
●Phase inversion to reduce power consumption and EMI.
●Up to 4 pixels which can be programmed to blink.
●The LCD controller can operate in Halt mode.
DD
.
Note:Unnecessary segments and common pins can be used as general I/O pins.
3.7 Memories
The medium density value line STM8L05xxx devices have the following main features:
●2 Kbytes of RAM
●The non-volatile memory is divided into three arrays:
–32 Kbytes of medium density embedded Flash program memory
–256 bytes of data EEPROM
–Option bytes
The EEPROM embeds the error correction code (ECC) feature. It supports the read-whilewrite (RWW): it is possible to execute the code from the program matrix while
programming/erasing the data matrix.
The option byte protects part of the Flash program memory from write and readout piracy.
3.8 DMA
A 4-channel direct memory access controller (DMA1) offers a memory-to-memory and
peripherals-from/to-memory transfer capability. The 4 channels are shared between the
following IPs with DMA capability: ADC1, I2C1, SPI1, USART1and the four timers.
18/102Doc ID 023331 Rev 1
STM8L052C6Functional overview
3.9 Analog-to-digital converter
●12-bit analog-to-digital converter (ADC1) with 25 channels (including 1 fast channel)
and internal reference voltage
●Conversion time down to 1 µs with f
●Programmable resolution
●Programmable sampling time
●Single and continuous mode of conversion
●Scan capability: automatic conversion performed on a selected group of analog inputs
●Analog watchdog
●Triggered by timer
SYSCLK
= 16 MHz
Note:ADC1 can be served by DMA1.
3.10 System configuration controller and routing interface
The system configuration controller provides the capability to remap some alternate
functions on different I/O ports. TIM4 and ADC1 DMA channels can also be remapped.
The highly flexible routing interface allows application software to control the routing of
different I/Os to the TIM1 timer input captures. It also controls the routing of internal analog
signals to ADC1 and the internal reference voltage V
REFINT
.
3.11 Timers
The medium density value line STM8L05xxx devices contain one advanced control timer
(TIM1), two 16-bit general purpose timers (TIM2 and TIM3) and one 8-bit basic timer
(TIM4).
All the timers can be served by DMA1.
Ta bl e 2 compares the features of the advanced control, general-purpose and basic timers.
Table 2.Timer feature comparison
Timer
TIM1
TIM2
TIM3
TIM48-bitup
Counter
resolution
16-bitup/down
Counter
type
Prescaler factor
Any integer
from 1 to 65536
Any power of 2
from 1 to 128
Any power of 2
from 1 to 32768
DMA1
request
generation
Ye s
Capture/compare
channels
3 + 13
2
0
Complementary
outputs
None
Doc ID 023331 Rev 119/102
Functional overviewSTM8L052C6
3.11.1 TIM1 - 16-bit advanced control timer
This is a high-end timer designed for a wide range of control applications. With its
complementary outputs, dead-time control and center-aligned PWM capability, the field of
applications is extended to motor control, lighting and half-bridge driver.
●16-bit up, down and up/down autoreload counter with 16-bit prescaler
●3 independent capture/compare channels (CAPCOM) configurable as input capture,
output compare, PWM generation (edge and center aligned mode) and single pulse
mode output
●1 additional capture/compare channel which is not connected to an external I/O
●Synchronization module to control the timer with external signals
●Break input to force timer outputs into a defined state
●3 complementary outputs with adjustable dead time
●Encoder mode
●Interrupt capability on various events (capture, compare, overflow, break, trigger)
3.11.2 16-bit general purpose timers
●16-bit autoreload (AR) up/down-counter
●7-bit prescaler adjustable to fixed power of 2 ratios (1…128)
●Interrupt capability on various events (capture, compare, overflow, break, trigger)
●Synchronization with other timers or external signals (external clock, reset, trigger and
enable)
3.11.3 8-bit basic timer
The 8-bit timer consists of an 8-bit up auto-reload counter driven by a programmable
prescaler. It can be used for timebase generation with interrupt generation on timer overflow.
3.12 Watchdog timers
The watchdog system is based on two independent timers providing maximum security to
the applications.
3.12.1 Window watchdog timer
The window watchdog (WWDG) is used to detect the occurrence of a software fault, usually
generated by external interferences or by unexpected logical conditions, which cause the
application program to abandon its normal sequence.
3.12.2 Independent watchdog timer
The independent watchdog peripheral (IWDG) can be used to resolve processor
malfunctions due to hardware or software failures.
It is clocked by the internal LSI RC clock source, and thus stays active even in case of a
CPU clock failure.
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STM8L052C6Functional overview
3.13 Beeper
The beeper function outputs a signal on the BEEP pin for sound generation. The signal is in
the range of 1, 2 or 4 kHz.
3.14 Communication interfaces
3.14.1 SPI
The serial peripheral interface (SPI1) provides half/ full duplex synchronous serial
communication with external devices.
●Maximum speed: 8 Mbit/s (f
●Full duplex synchronous transfers
●Simplex synchronous transfers on 2 lines with a possible bidirectional data line
●Master or slave operation - selectable by hardware or software
●Hardware CRC calculation
●Slave/master selection input pin
SYSCLK
Note:SPI1 can be served by the DMA1 Controller.
/2) both for master and slave
3.14.2 I²C
The I2C bus interface (I2C1) provides multi-master capability, and controls all I²C busspecific sequencing, protocol, arbitration and timing.
●Master, slave and multi-master capability
●Standard mode up to 100 kHz and fast speed modes up to 400 kHz
●7-bit and 10-bit addressing modes
●SMBus 2.0 and PMBus support
●Hardware CRC calculation
Note:I
2
C1 can be served by the DMA1 Controller.
3.14.3 USART
The USART interface (USART1) allows full duplex, asynchronous communications with
external devices requiring an industry standard NRZ asynchronous serial data format. It
offers a very wide range of baud rates.
●1 Mbit/s full duplex SCI
●SPI1 emulation
●High precision baud rate generator
●Smartcard emulation
●IrDA SIR encoder decoder
●Single wire half duplex mode
Note:USART1 can be served by the DMA1 Controller.
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Functional overviewSTM8L052C6
3.15 Infrared (IR) interface
The medium density value line STM8L05xxx devices contain an infrared interface which can
be used with an IR LED for remote control functions. Two timer output compare channels
are used to generate the infrared remote control signals.
3.16 Development support
Development tools
Development tools for the STM8 microcontrollers include:
●The STice emulation system offering tracing and code profiling
●The STVD high-level language debugger including C compiler, assembler and
integrated development environment
●The STVP Flash programming software
The STM8 also comes with starter kits, evaluation boards and low-cost in-circuit
debugging/programming tools.
Single wire data interface (SWIM) and debug module
The debug module with its single wire data interface (SWIM) permits non-intrusive real-time
in-circuit debugging and fast memory programming.
The Single wire interface is used for direct access to the debugging module and memory
programming. The interface can be activated in all device operation modes.
The non-intrusive debugging module features a performance close to a full-featured
emulator. Beside memory and peripherals, CPU operation can also be monitored in realtime by means of shadow registers.
Bootloader
A bootloader is available to reprogram the Flash memory using the USART1 interface. The
reference document for the bootloader is UM0560: STM8 bootloader user manual.
The bootloader is used to download application software into the device memories,
including RAM, program and data memory, using standard serial interfaces. It is a
complementary solution to programming via the SWIM debugging interface.
Table 4.Medium density value line STM8L05xxx pin description
TT3.6 V tolerant
OutputHS = high sink/source (20 mA)
Inputfloat = floating, wpu = weak pull-up
OutputT = true open drain, OD = open drain, PP = push pull
Bold X (pin state after reset release).
Unless otherwise specified, the pin state is the same during the reset phase (i.e.
“under reset”) and after internal reset release (i.e. at reset state).
Pin
number
LQFP48
2NRST/PA1
PA2/OSC_IN/
3
[USART1_TX]
[SPI1_MISO]
PA3/OSC_OUT/[USART1_
4
RX]
(8)
/[SPI1_MOSI]
PA4/TIM2_BKIN/
5
LCD_COM0/ADC1_IN2
PA5/TIM3_BKIN/
6
LCD_COM1/ADC1_IN1
PA 6/ [ADC1_TRIG]/
7
LCD_COM2/ADC1_IN0
8PA7/LCD_SEG0
(4)
PB0
24
/TIM2_CH1/
LCD_SEG10/ADC1_IN18
PB1/TIM3_CH1/
25
LCD_SEG11/
ADC1_IN17
PB2/ TIM2_CH2/
26
LCD_SEG12/
ADC1_IN16
Pin name
(1)
(8)
/
(8)
(3)
(8)
InputOutput
Type
I/O level
wpu
floating
OD
PP
Default alternate function
(after reset)
Main function
Ext. interrupt
High sink/source
I/OXHSX ResetPA 1
HSE oscillator input /
I/OXXXHS XX Port A2
[USART1 transmit] / [SPI1
master in- slave out]
HSE oscillator output /
I/OXXXHS XX Port A3
[USART1 receive]/ [SPI1
master out/slave in]/
I/O TT
I/O TT
(2)
XXXHSXXPort A4
(2)
XXXHSXXPort A5
Timer 2 - break input /
LCD COM 0 / ADC1 input 2
Timer 3 - break input /
LCD_COM 1 / ADC1 input
1
[ADC1 - trigger] /
LCD_COM2 /
I/O TT
(2)
XXXHSXXPort A6
ADC1 input 0
I/O FTXXXHS XX Port A7 LCD segment 0
I/O TT
I/O TT
I/O TT
(2)X(4)X(4)
(2)
XXXHSXXPort B1
(2)
XXXHSXXPort B2
XHSX XPort B0
Timer 2 - channel 1 / LCD
segment 10 / ADC1_IN18
Timer 3 - channel 1 / LCD
segment 11 / ADC1_IN17
Timer 2 - channel 2 / LCD
segment 12 / ADC1_IN16
24/102Doc ID 023331 Rev 1
STM8L052C6Pin description
Table 4.Medium density value line STM8L05xxx pin description (continued)
Table 4.Medium density value line STM8L05xxx pin description (continued)
Pin
number
LQFP48
Pin name
Typ e
InputOutput
I/O level
wpu
floating
OD
PP
Main function
Default alternate function
(after reset)
Ext. interrupt
High sink/source
PE7/LCD_SEG27
48
32PF0/ADC1_IN24I/OXXXHS XX Por t F0
I/O TT
(2)
XXXHSXXPort E7 LCD segment 27
ADC1_IN24
13VLCDSLCD booster external capacitor
13ReservedReserved. Must be tied to V
10V
11V
12V
39V
40V
DD
DDA
REF+
9V
SS1/VSSA/VREF-
DD2
SS2
(6)
PA 0
1
/[USART1_CK]
SWIM/BEEP/IR_TIM
(8)
(7)
SDigital power supply
SAnalog supply voltage
SADC1 positive voltage reference
S
I/O ground / Analog ground voltage /
ADC1 negative voltage reference
SIOs supply voltage
SIOs ground voltage
[USART1 synchronous
/
I/OX X
(6)
HS
X
XXPort A0
(7)
(8)
clock]
output /Beep output
/ SWIM input and
/ Infrared Timer output
DD
1. At power-up, the PA1/NRST pin is a reset input pin with pull-up. To be used as a general purpose pin (PA1), it can be
configured only as output open-drain or push-pull, not as a general purpose input. Refer to Section Configuring NRST/PA1 pin as general purpose output in the STM8L15x and STM8L16x reference manual (RM0031).
2. In the 3.6 V tolerant I/Os, protection diode to V
3. In the 5 V tolerant I/Os, protection diode to V
4. A pull-up is applied to PB0 and PB4 during the reset phase. These two pins are input floating after reset release.
5. In the open-drain output column, ‘T’ defines a true open-drain I/O (P-buffer, weak pull-up and protection diode to V
not implemented).
6. The PA0 pin is in input pull-up during the reset phase and after reset release.
7. High Sink LED driver capability available on PA0.
8. [ ] Alternate function remapping option (if the same alternate function is shown twice, it indicates an exclusive choice not
aduplication of the function).
is not implemented.
DD
is not implemented.
DD
DD
are
Note:The slope control of all GPIO pins, except true open drain pins, can be programmed. By
default, the slope control is limited to 2 MHz.
Doc ID 023331 Rev 127/102
Pin descriptionSTM8L052C6
4.1 System configuration options
As shown in Table 4: Medium density value line STM8L05xxx pin description, some
alternate functions can be remapped on different I/O ports by programming one of the two
remapping registers described in the “ Routing interface (RI) and system configuration
controller” section in the STM8L15x and STM8L16x reference manual (RM0031).
28/102Doc ID 023331 Rev 1
STM8L052C6Memory and register map
GPIO and peripheral registers
0x00 0000
Reserved
Medium density
(32 Kbytes)
Reset and interrupt vectors
0x00 1000
0x00 10FF
RAM
0x00 07FF
(2 Kbytes)
(1)
(513 bytes)
(1)
0x00 1100
Data EEPROM
0x00 4800
0x00 48FF
0x00 4900
0x00 7FFF
0x00 8000
0x00 FFFF
0x00 0800
0x00 0FFF
0x00 47FF
0x00 7EFF
0x00 8080
0x00 807F
0x00 7F00
Reserved
including
Stack
(256 bytes)
Option bytes
0x00 4FFF
0x00 5000
0x00 57FF
0x00 5800
Reserved
0x00 5FFF
Boot ROM
0x00 6000
0x00 67FF
(2 Kbytes)
0x00 6800
Reserved
CPU/SWIM/Debug/ITC
Registers
0x00 5000
GPIO Ports
0x00 5050
Flash
0x00 50C0
ITC-EXTI
0x00 50D3
RST
0x00 50E0
CLK
0x00 50F3
WWDG
0x00 5210
IWDG
0x00 5230
BEEP
0x00 5250
RTC
0x00 5280
SPI1
0x00 52B0
I2C1
0x00 52E0
USART1
TIM2
TIM3
TIM1
TIM4
IRTIM
ADC1
0x00 5070
DMA1
SYSCFG
LCD
RI
0x00 509E
0x00 50A0
0x00 50B0
0x00 5140
0x00 5200
0x00 52FF
0x00 5340
0x00 5380
0x00 5400
0x00 5430
0x00 5440
Flash program memory
WFE
0x00 50A6
0x00 50B2
PWR
Reserved
Reserved
Reserved
5 Memory and register map
5.1 Memory mapping
The memory map is shown in Figure 4.
Figure 4.Memory map
1. Table 5 lists the boundary addresses for each memory size. The top of the stack is at the RAM end
address.
2. Refer to Table 7 for an overview of hardware register mapping, to Table 6 for details on I/O port hardware
registers, and to Table 8 for information on CPU/SWIM/debug module controller registers.
Doc ID 023331 Rev 129/102
Memory and register mapSTM8L052C6
Table 5.Flash and RAM boundary addresses
Memory areaSizeStart addressEnd address
RAM2 Kbytes0x00 00000x00 07FF
Flash program memory32 Kbytes0x00 80000x00 FFFF
5.2 Register map
Table 6.I/O port hardware register map
0x00 5000
0x00 5001PA_IDRPort A input pin value register0xXX
0x00 5002PA_DDRPort A data direction register0x00
0x00 5003PA_CR1Port A control register 10x01
0x00 5004PA_CR2Port A control register 20x00
0x00 5005
0x00 5006PB_IDRPort B input pin value register0xXX
0x00 5007PB_DDRPort B data direction register0x00
0x00 5008PB_CR1Port B control register 10x00
AddressBlockRegister labelRegister name
PA_ODRPort A data output latch register0x00
Por t A
PB_ODRPort B data output latch register0x00
Por t B
Reset
status
0x00 5009PB_CR2Port B control register 20x00
0x00 500A
PC_ODRPort C data output latch register0x00
0x00 500BPC_IDRPort C input pin value register0xXX
0x00 500CPC_DDRPort C data direction register0x00
Por t C
0x00 500DPC_CR1Port C control register 10x00
0x00 500EPC_CR2Port C control register 20x00
0x00 500F
PD_ODRPort D data output latch register0x00
0x00 5010PD_IDRPort D input pin value register0xXX
0x00 5011PD_DDRPort D data direction register0x00
Por t D
0x00 5012PD_CR1Port D control register 10x00
0x00 5013PD_CR2Port D control register 20x00
0x00 5014
PE_ODRPort E data output latch register0x00
0x00 5015PE_IDRPort E input pin value register0xXX
0x00 5016PE_DDRPort E data direction register0x00
Por t E
0x00 5017PE_CR1Port E control register 10x00
0x00 5018PE_CR2Port E control register 20x00
30/102Doc ID 023331 Rev 1
STM8L052C6Memory and register map
Table 6.I/O port hardware register map (continued)
AddressBlockRegister labelRegister name
0x00 5019
PF_ODRPort F data output latch register0x00
0x00 501APF_IDRPort F input pin value register0xXX
6EXTIB/GExternal interrupt port B/GYesYesYesYes0x00 8020
7EXTID/HExternal interrupt port D/HYesYesYesYes0x00 8024
8EXTI0External interrupt 0YesYesYesYes0x00 8028
9EXTI1External interrupt 1YesYesYesYes0x00 802C
10EXTI2External interrupt 2YesYesYesYes0x00 8030
11EXTI3External interrupt 3YesYesYesYes0x00 8034
12EXTI4External interrupt 4YesYesYesYes0x00 8038
13EXTI5External interrupt 5YesYesYesYes0x00 803C
14EXTI6External interrupt 6YesYesYesYes0x00 8040
15EXTI7External interrupt 7YesYesYesYes0x00 8044
16LCDLCD interrupt--YesYes0x00 8048
CLK system clock switch/
17CLK/TIM1
CSS interrupt/
--YesYes0x00 804C
TIM 1 break
ACD1 end of conversion/
18ADC1
analog watchdog/
YesYesYesYes0x00 8050
overrun interrupt
Doc ID 023331 Rev 147/102
Interrupt vector mappingSTM8L052C6
Table 9.Interrupt mapping (continued)
IRQ
No.
Source
block
Description
Wakeup
from Halt
mode
Wakeup
from
Active-
halt mode
Wakeup
from Wait
(WFI
mode)
Wakeup
from Wait
(WFE
(1)
mode)
Vector
address
TIM2 update/overflow/
19TIM2
trigger/break
--YesYes0x00 8054
interrupt
20TIM2
21TIM3
22TIM3
23TIM1
TIM2capture/
compare interrupt
TIM3 update/overflow/
trigger/break interrupt
TIM3 capture/compare
interrupt
Update /overflow/trigger/
COM
--YesYes0x00 8058
--YesYes0x00 805C
--YesYes0x00 8060
---Yes0x00 8064
24TIM1Capture/compare---Yes0x00 8068
25TIM4
TIM4 update/overflow/
trigger interrupt
--YesYes0x00 806C
SPI1 TX buffer empty/
26SPI1
RX buffer not empty/
YesYesYesYes0x00 8070
error/wakeup interrupt
USART1transmit data
27USART1
register empty/
transmission complete
--YesYes0x00 8074
interrupt
USART1 received data
28USART1
ready/overrun error/
idle line detected/parity
--YesYes0x00 8078
error/global error interrupt
2
29I
1. The Low power wait mode is entered when executing a WFE instruction in Low power run mode. In WFE mode, the
interrupt is served if it has been previously enabled. After processing the interrupt, the processor goes back to WFE mode.
When the interrupt is configured as a wakeup event, the CPU wakes up and resumes processing.
2. The interrupt from PVD is logically OR-ed with Port E and F interrupts. Register EXTI_CONF allows to select between Port
E and Port F interrupt (see External interrupt port select register (EXTI_CONF)in the RM0031).
3. The device is woken up from Halt or Active-halt mode only when the address received matches the interface address.
C1I2C1 interrupt
(3)
YesYesYesYes0x00 807C
48/102Doc ID 023331 Rev 1
STM8L052C6Option bytes
7 Option bytes
Option bytes contain configurations for device hardware features as well as the memory
protection of the device. They are stored in a dedicated memory block.
All option bytes can be modified in ICP mode (with SWIM) by accessing the EEPROM
address. See Tab le 1 0 for details on option byte addresses.
The option bytes can also be modified ‘on the fly’ by the application in IAP mode, except for
the ROP and UBC values which can only be taken into account when they are modified in
ICP mode (with the SWIM).
Refer to the STM8Lxx Flash programming manual (PM0054) and STM8 SWIM and Debug
Manual (UM0470) for information on SWIM programming procedures.
Table 10.Option byte addresses
Option
Addr.Option name
Read-out
0x00 4800
0x00 4802
0x00 4807Reserved0x00
0x00 4808
0x00 4809
0x00 480A
0x00 480BBootloader
0x00 480C0x00
protection
(ROP)
UBC (User
Boot code size)
Independent
watchdog
option
Number of
stabilization
clock cycles for
HSE and LSE
oscillators
Brownout reset
(BOR)
option bytes
(OPTBL)
byte
No.
OPT0ROP[7:0]0xAA
OPT1UBC[7:0]0x00
OPT3
[3:0]
OPT4ReservedLSECNT[1:0]HSECNT[1:0]0x00
OPT5
[3:0]
OPTBL
[15:0]
76543210
Reserved
ReservedBOR_TH
Option bitsFactory
default
setting
WWDG
_HALT
OPTBL[15:0]
WWDG
_HW
IWDG
_HALT
IWDG
_HW
BOR_
ON
0x00
0x01
0x00
Doc ID 023331 Rev 149/102
Option bytesSTM8L052C6
Table 11.Option byte description
Option
byte
No.
ROP[7:0] Memoryreadout protection (ROP)
OPT0
0xAA: Disable readout protection (write access via SWIM protocol)
Refer to Readout protection section in the STM8L05x/15x and STM8L16x reference manual
(RM0031).
UBC[7:0] Size of the user boot code area
0x00: no UBC
0x01: the UBC contains only the interrupt vectors.
OPT1
0x02: Page 0 and 1 reserved for the UBC and read/write protected. Page 0 contains only the interrupt
vectors.
0x03 - Page 0 to 2 reserved for UBC, memory write-protected
0xFF - Page 0 to 254 reserved for UBC, memory write-protected
Refer to User boot code section in the STM8L05x/15x and STM8L16x reference manual (RM0031).
OPT2Reserved
IWDG_HW: Independent watchdog
0: Independent watchdog activated by software
1: Independent watchdog activated by hardware
IWDG_HALT: Independent window watchdog off on Halt/Active-halt
0: Independent watchdog continues running in Halt/Active-halt mode
1: Independent watchdog stopped in Halt/Active-halt mode
OPT3
WWDG_HW: Window watchdog
0: Window watchdog activated by software
1: Window watchdog activated by hardware
Option description
OPT4
WWDG_HALT: Window window watchdog reset on Halt/Active-halt
0: Window watchdog stopped in Halt mode
1: Window watchdog generates a reset when MCU enters Halt mode
HSECNT: Number of HSE oscillator stabilization clock cycles
Refer to Table 29: LSE oscillator characteristics on page 69.
50/102Doc ID 023331 Rev 1
STM8L052C6Option bytes
Table 11.Option byte description (continued)
Option
byte
No.
OPT5
OPTBL
Option description
BOR_ON:
0: Brownout reset off
1: Brownout reset on
BOR_TH[3:1]: Brownout reset thresholds. Refer to Ta b le 20 for details on the thresholds according to
the value of BOR_TH bits.
OPTBL[15:0]:
This option is checked by the boot ROM code after reset. Depending on
content of addresses 00 480B, 00 480C and 0x8000 (reset vector) the
CPU jumps to the bootloader or to the reset vector.
Refer to the UM0560 bootloader user manual for more details.
Doc ID 023331 Rev 151/102
Electrical parametersSTM8L052C6
50 pF
STM8L PIN
8 Electrical parameters
8.1 Parameter conditions
Unless otherwise specified, all voltages are referred to VSS.
8.1.1 Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
is indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3Σ).
8.1.2 Typical values
= 25 °C and TA = TA max (given by
A
Unless otherwise specified, typical data is based on TA = 25 °C, V
design guidelines and is not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated
8.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
8.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 5.
Figure 5.Pin loading conditions
(mean±2Σ).
= 3 V. It is given only as
DD
52/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
V
IN
STM8L PIN
8.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 6.
Figure 6.Pin input voltage
8.2 Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 12.Voltage characteristics
SymbolRatingsMinMaxUnit
- V
V
DD
SS
External supply voltage (including V
and V
DD2
(1)
)
Input voltage on true open-drain pins
(PC0 and PC1)
(2)
V
IN
Input voltage on five-volt tolerant (FT)
pins (PA7 and PE0)
Input voltage on 3.6 V tolerant (TT) pinsV
Input voltage on any other pin V
DDA
- 0.34.0V
V
- 0.3VDD + 4.0
SS
- 0.3V
V
SS
- 0.34.0
SS
- 0.34.0
SS
DD
+ 4.0
see Absolute maximum
V
ESD
Electrostatic discharge voltage
ratings (electrical sensitivity)
on page 95
1. All power (V
external power supply.
2. VIN maximum must always be respected. Refer to Table 13. for maximum allowed injected current values.
DD1
, V
DD2
, V
) and ground (V
DDA
SS1
, V
SS2
, V
) pins must always be connected to the
SSA
V
Doc ID 023331 Rev 153/102
Electrical parametersSTM8L052C6
Table 13.Current characteristics
SymbolRatings Max.Unit
I
VDD
I
VSS
Total current into V
Total current out of V
power line (source)80
DD
ground line (sink)80
SS
Output current sunk by IR_TIM pin (with high sink LED driver
capability)
I
IO
Output current sunk by any other I/O and control pin25
Output current sourced by any I/Os and control pin- 25
Injected current on true open-drain pins (PC0 and PC1)
(1)
Injected current on five-volt tolerant (FT) pins (PA7 and PE0)
I
INJ(PIN)
Injected current on 3.6 V tolerant (TT) pins
Injected current on any other pin
ΣI
INJ(PIN)
1. Positive injection is not possible on these I/Os. A negative injection is induced by VIN<VSS. I
never be exceeded. Refer to Table 12. for maximum allowed input voltage values.
2. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. I
never be exceeded. Refer to Table 12. for maximum allowed input voltage values.
3. When several inputs are submitted to a current injection, the maximum ΣI
positive and negative injected currents (instantaneous values).
Table 14.Thermal characteristics
Total injected current (sum of all I/O and control pins)
(2)
(1)
(3)
is the absolute sum of the
INJ(PIN)
(1)
- 5 / +0
- 5 / +0
- 5 / +0
- 5 / +5
± 25
80
INJ(PIN)
INJ(PIN)
mA
must
must
SymbolRatingsValueUnit
T
STG
T
Storage temperature range-65 to +150
Maximum junction temperature150
J
° C
54/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
8.3 Operating conditions
Subject to general operating conditions for VDD and TA.
8.3.1 General operating conditions
Table 15.General operating conditions
SymbolParameter ConditionsMin.Max.Unit
System clock
f
SYSCLK
1. f
2. To calculate P
3. T
(1)
frequency
V
DD
V
DDA
(2)
P
D
T
A
T
J
SYSCLK
characteristics” table.
Jmax
Standard operating
voltage
Analog operating
voltage
Power dissipation at
= 85 °C
T
A
Temperature range1.8 V ≤ V
Junction temperature
range
= f
CPU
), use the formula P
Dmax(TA
is given by the test limit. Above this value, the product behavior is not guaranteed.
Dmax
1.8 V ≤ V
Must be at the same
potential as V
-40 °C ≤ T
=(T
-TA)/ΘJA with T
Jmax
< 3.6 V016MHz
DD
DD
LQFP48288mW
< 3.6 V-4085°C
DD
<85 °C-40105
A
Jmax
1.83.6V
1.83.6V
in this table and Θ
in “Thermal
JA
(3)
°C
Doc ID 023331 Rev 155/102
Electrical parametersSTM8L052C6
8.3.2 Embedded reset and power control block characteristics
Table 16.Embedded reset and power control block characteristics
Symbol Parameter ConditionsMin
t
VDD
t
TEMP
V
PDR
V
BOR0
V
BOR1
V
BOR2
V
BOR3
V
BOR4
VDD rise time rate
VDD fall time rate
Reset release delay
BOR detector
enabled
BOR detector
enabled
rising
V
DD
0
20
Power-down reset threshold Falling edge1.30
Brown-out reset threshold 0
(BOR_TH[2:0]=000)
Brown-out reset threshold 1
(BOR_TH[2:0]=001)
Brown-out reset threshold 2
(BOR_TH[2:0]=010)
Brown-out reset threshold 3
(BOR_TH[2:0]=011)
Brown-out reset threshold 4
(BOR_TH[2:0]=100)
Falling edge1.671.701.74
Rising edge1.691.751.80
Falling edge1.871.931.97
Rising edge1.962.042.07
Falling edge2.222.32.35
Rising edge2.312.412.44
Falling edge2.452.552.60
Rising edge2.542.662.7
Falling edge2.682.802.85
Rising edge2.782.902.95
(1)
(1)
(2)
Typ
3ms
1.501.65 V
MaxUnit
(1)
∞
µs/V
(1)
∞
V
V
PVD0
PVD threshold 0
Rising edge1.881.941.99
Falling edge1.982.042.09
Falling edge1.801.841.88
V
PVD1
PVD threshold 1
Rising edge2.082.142.18
Falling edge2.22.242.28
V
PVD2
PVD threshold 2
Rising edge2.282.342.38
Falling edge2.392.442.48
V
PVD3
PVD threshold 3
Rising edge2.472.542.58
Falling edge2.572.642.69
V
PVD4
PVD threshold 4
Rising edge2.682.742.79
Falling edge2.772.832.88
V
PVD5
PVD threshold 5
Rising edge2.872.942.99
Falling edge2.973.053.09
V
PVD6
1. Data guaranteed by design, not tested in production.
2. Data based on characterization results, not tested in production.
PVD threshold 6
Rising edge3.083.153.20
V
56/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
1.8 V
Vdd
Internal NRST
VBOR0
BOR threshold
BOR Threshold_0
PDR Threshold
with
BOR
without
BOR
Time
with
BOR
Safe Reset
Reset
at power up
BOR activated by user for
power down detection
Vdd
Vdd
Operating power supply
3.6 V
without BOR = Batte ry lif e exten sion
VPDR
Safe Reset release
BOR always active
Figure 7.POR/BOR thresholds
8.3.3 Supply current characteristics
Total current consumption
The MCU is placed under the following conditions:
●All I/O pins in input mode with a static value at V
●All peripherals are disabled except if explicitly mentioned.
In the following table, data is based on characterization results, unless otherwise specified.
Subject to general operating conditions for V
DD
and TA.
or VSS (no load)
DD
Doc ID 023331 Rev 157/102
Electrical parametersSTM8L052C6
Table 17.Total current consumption in Run mode
Symbol
I
DD(RUN)
Para
meter
Supply
current
in run
(2)
mode
All
peripherals
OFF,
code
executed
from RAM,
from 1.8
V
DD
V to
3.6 V
Conditions
HSI RC osc.
(16 MHz)
HSE external
clock
(f
CPU=fHSE
LSI RC osc.
(typ. 38 kHz)
(3)
(1)
f
= 125 kHz
CPU
f
= 1 MHz
CPU
= 4 MHz
f
CPU
f
= 8 MHz
CPU
f
= 16 MHz
CPU
f
= 125 kHz
CPU
f
= 1 MHz
CPU
f
= 4 MHz
CPU
(4)
)
= 8 MHz
f
CPU
f
= 16 MHz
CPU
f
= f
CPU
LSI
LSE external
= f
clock
f
CPU
LSE
(32.768 kHz)
f
= 125 kHz
CPU
f
= 1 MHz
CPU
I
DD(RUN)
Supply
current
in Run
mode
All
peripherals
OFF, code
executed
from Flash,
from
V
DD
1.8 V to 3.6 V
HSI RC
(6)
osc.
HSE external
clock
(f
CPU=fHSE
)
LSI RC osc.
(4)
= 4 MHz
f
CPU
= 8 MHz
f
CPU
f
= 16 MHz
CPU
f
= 125 kHz
CPU
f
= 1 MHz
CPU
f
= 4 MHz
CPU
f
= 8 MHz
CPU
= 16 MHz
f
CPU
= f
f
CPU
LSI
LSE ext. clock
(32.768
(7)
kHz)
1. All peripherals OFF, VDD from 1.8 V to 3.6 V, HSI internal RC osc. , f
2. CPU executing typical data processing
3. The run from RAM consumption can be approximated with the linear formula:
IDD(run_from_RAM) = Freq * 90 µA/MHz + 380 µA
f
CPU
= f
LSE
CPU=fSYSCLK
Max
Typ
55 °C
85 °C
0.390.470.49
0.480.560.58
0.750.840.86
1.101.201.25
1.851.932.12
0.050.060.09
0.180.190.20
0.550.620.64
0.991.201.21
1.902.222.23
0.040 0.0450.046
0.035 0.040 0.048
0.430.550.56
0.600.770.80
1.111.341.37
1.902.202.23
3.84.604.75
0.300.360.39
0.400.500.52
1.151.311.40
2.172.332.44
4.04.464.52
0.110 0.1230.130
0.100 0.1010.104
Unit
(5)
mA
(5)
(5)
mA
58/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
1.50
1.75
2.00
2.25
2.50
2.75
3.00
1.82.12.63.13.6
V
DD
[V]
IDD(RUN)HSI [mA]
-40°C
25°C
85°C
ai18213V2
4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE
consumption
(I
) must be added. Refer to Table 28.
DD HSE
5. Tested in production.
6. The run from Flash consumption can be approximated with the linear formula:
(run_from_Flash) = Freq * 195 µA/MHz + 440 µA
I
DD
7. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE
consumption
) must be added. Refer to Table 29.
(I
DD LSE
Figure 8.Typ. I
1. Typical current consumption measured with code executed from RAM
DD(RUN)
vs. VDD,f
= 16MHz
CPU
Doc ID 023331 Rev 159/102
Electrical parametersSTM8L052C6
In the following table, data is based on characterization results, unless otherwise specified.
Table 18.Total current consumption in Wait mode
Max
(4)
=HSE)
(1)
= 125 kHz
f
CPU
f
= 1 MHz
CPU
= 4 MHz
f
CPU
f
= 8 MHz
CPU
f
= 16 MHz
CPU
f
= 125 kHz
CPU
f
= 1 MHz
CPU
f
= 4 MHz
CPU
(4)
)
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
= 8 MHz
= 16 MHz
= f
LSI
= f
LSE
= 125 kHz
= 1 MHz
= 4 MHz
= 8 MHz
= 16 MHz
= 125 kHz
= 1 MHz
= 4 MHz
= 8 MHz
= 16 MHz
= f
LSI
= f
LSE
Typ
55°C
°C
85
(2)
0.330.390.41
0.350.410.44
0.420.510.52
0.520.570.58
0.680.760.79
0.032 0.056 0.068
0.078 0.121 0.144
0.218 0.260.30
0.400.520.57
0.760 1.011.05
0.035 0.044 0.046
0.032 0.036 0.038
0.380.480.49
0.410.490.51
0.500.570.58
0.600.660.68
0.790.840.86
0.060.080.09
0.100.170.18
0.240.360.39
0.500.580.61
1.001.081.14
0.055 0.058 0.065
0.051 0.056 0.060
Unit
mA
mA
Symbol Parameter
Supply
I
DD(Wait)
current in
Wait mode
Supply
I
DD(Wait)
current in
Wait
mode
CPU not
clocked,
all peripherals
OFF,
code executed
from RAM
with Flash in
(3)
mode
I
DDQ
from
V
DD
1.8 V to 3.6 V
CPU not
clocked,
all peripherals
OFF,
code executed
from Flash,
from
V
DD
1.8 V to 3.6 V
Conditions
HSI
HSE external
clock
(f
CPU=fHSE
,
LSI
(5)
LSE
external clock
(32.768
kHz)
HSI
HSE
external clock
(f
CPU
LSI
(5)
LSE
external clock
(32.768 kHz)
1. All peripherals OFF, VDD from 1.8 V to 3.6 V, HSI internal RC osc. , f
2. For temperature range 6.
3. Flash is configured in I
mode in Wait mode by setting the EPM or WAITM bit in the Flash_CR1 register.
DDQ
60/102Doc ID 023331 Rev 1
CPU
= f
SYSCLK
STM8L052C6Electrical parameters
500
550
600
650
700
750
800
850
900
950
1000
1.82.12.63.13.6
V
DD
[V]
IDD(WAIT)HSI
[μA]
-40°C
25°C
85°C
ai18214V2
4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE
consumption
(I
) must be added. Refer to Table 28.
DD HSE
5. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE
consumption
) must be added. Refer to Table 29.
(I
DD HSE
Figure 9.Typ. I
1. Typical current consumption measured with code executed from Flash memory.
DD(Wait)
vs. VDD,f
CPU
=16MHz
1)
Doc ID 023331 Rev 161/102
Electrical parametersSTM8L052C6
In the following table, data is based on characterization results, unless otherwise specified.
Table 19.Total current consumption and timing in Low power run mode at V
= 1.8 V to
DD
3.6 V
SymbolParameter
Conditions
all peripherals OFF
LSI RC osc.
(at 38 kHz)
with TIM2 active
I
DD(LPR)
Supply current in Low
power run mode
all peripherals OFF
(3)
LSE
external
clock
(32.768 kHz)
with TIM2 active
1. No floating I/Os
2. Timer 2 clock enabled and counter running
3. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption
) must be added. Refer to Table 29
(I
DD LSE
(1)
(2)
(2)
TypMa xUnit
= -40 °C
T
A
to 25 °C
T
= 55 °C5.76
A
= 85 °C6.87.5
T
A
T
= -40 °C
A
to 25 °C
T
= 55 °C6.06.3
A
= 85 °C7.27.8
T
A
TA = -40 °C
to 25 °C
T
= 55 °C5.676.1
A
= 85 °C5.856.3
T
A
TA = -40 °C
to 25 °C
T
= 55 °C6.106.4
A
= 85 °C6.307
T
A
5.15.4
5.45.7
5.255.6
5.596
μA
Figure 10. Typ. I
[μA]
DD(LPR)LSI
I
DD(LPR)
vs. V
18
16
14
12
10
8
6
4
2
0
1.82.12.63.13.6
(LSI clock source)
DD
V
DD
62/102Doc ID 023331 Rev 1
[V]
–40° C
25° C
85° C
ai18216V2
STM8L052C6Electrical parameters
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
1.82.12.6
3.13.6
V
DD
[V]
I
DD(LPW )LSI
[µA]
-40°C
25°C
85°C
ai18217V2
In the following table, data is based on characterization results, unless otherwise specified.
Table 20.Total current consumption in Low power wait mode at V
SymbolParameter
Conditions
(1)
= 1.8V to 3.6V
DD
Typ Max Uni t
I
DD(LPW)
Supply current in
Low power wait mode
LSI RC osc.
(at 38 kHz)
LSE external
(3)
clock
(32.768 kHz)
all peripherals OFF
with TIM2 active
(2)
all peripherals OFF
with TIM2 active
(2)
TA = -40 °C to 25 °C
T
= 55 °C3.33.6
A
= 85 °C4.45
T
A
= -40 °C to 25 °C
T
A
T
= 55 °C3.74
A
= 85 °C4.85.4
T
A
T
= -40 °C to 25 °C
A
T
= 55 °C2.42 2.82
A
= 85 °C3.10 3.71
T
A
TA = -40 °C to 25 °C
= 55 °C2.50 2.81
T
A
= 85 °C3.16 3.82
T
A
33.3
3.43.7
2.35 2.7
2.46 2.75
1. No floating I/Os.
2. Timer 2 clock enabled and counter is running.
3. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption
) must be added. Refer to Table 29.
(I
DD LSE
Figure 11. Typ. I
DD(LPW)
vs. V
(LSI clock source)
DD
μA
Doc ID 023331 Rev 163/102
Electrical parametersSTM8L052C6
In the following table, data is based on characterization results, unless otherwise specified.
Table 21.Total current consumption and timing in Active-halt mode at V
SymbolParameter
Conditions
(1)
= 1.8 V to 3.6 V
DD
Typ Max Unit
I
DD(AH)
I
DD(AH)
Supply current in
Active-halt mode
Supply current in
Active-halt mode
Supply current during
I
DD(WUFAH)
wakeup time from
Active-halt mode
(using HSI)
Wakeup time from
(8)(9)
t
WU_HSI(AH)
Active-halt mode to
Run mode (using HSI)
Wakeup time from
(9)
(8)
Active-halt mode to
Run mode (using LSI)
t
WU_LSI(AH)
1. No floating I/O, unless otherwise specified.
2. RTC enabled. Clock source = LSI
3. RTC enabled, LCD enabled with external V
LSI RC
(at 38 kHz)
LSE external
clock
(32.768 kHz)
(6)
LCD OFF
(2)
LCD ON
(static duty/
external
(3)
)
V
LCD
LCD ON
(1/4 duty/
external
(4)
)
V
LCD
LCD ON
(1/4 duty/
internal
(5)
V
)
LCD
LCD OFF
(7)
LCD ON
(static duty/
external
(3)
V
)
LCD
LCD ON
(1/4 duty/
external
(4)
)
V
LCD
LCD ON
(1/4 duty/
internal
(5)
V
)
LCD
TA = -40 °C to 25 °C
T
= 55 °C1.23
A
= 85 °C1.53.4
T
A
TA = -40 °C to 25 °C
T
= 55 °C1.53.3
A
= 85 °C1.94.3
T
A
TA = -40 °C to 25 °C
T
= 55 °C1.954.4
A
= 85 °C2.45.4
T
A
TA = -40 °C to 25 °C
= 55 °C4.159.3
T
A
= 85 °C4.510.2
T
A
TA = -40 °C to 25 °C
T
= 55 °C0.621.4
A
= 85 °C0.882.1
T
A
TA = -40 °C to 25 °C
= 55 °C0.952.2
T
A
= 85 °C1.33.2
T
A
TA = -40 °C to 25 °C
T
= 55 °C1.63.8
A
= 85 °C1.84.2
T
A
TA = -40 °C to 25 °C
= 55 °C3.78.3
T
A
= 85 °C3.99.2
T
A
0.92.1
1.43.1
1.94.3
3.98.75
0.51.2
0.851.9
1.52.5
3.47.6
2.4mA
4.77μs
150μs
= 3 V, static duty, division ratio = 256, all pixels active, no LCD connected.
LCD
μA
μA
64/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
4. RTC enabled, LCD enabled with external V
5. LCD enabled with internal LCD booster V
connected.
6. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption
7. RTC enabled. Clock source = LSE.
8. Wakeup time until start of interrupt vector fetch.
9. ULP=0 or ULP=1 and FWU=1 in the PWR_CSR2 register.
Table 22.Typical current consumption in Active-halt mode, RTC clocked by LSE external crystal
) must be added. Refer to Table 29.
(I
DD LSE
The first word of interrupt routine is fetched 4 CPU cycles after t
SymbolParameter Condition
, 1/4 duty, 1/3 bias, division ratio = 64, all pixels active, no LCD connected.
LCD
= 3 V , 1/4 duty, 1/3 bias, division ratio = 64, all pixels active, no LCD
LCD
.
WU
(1)
TypUnit
LSE1.15
V
= 1.8 V
I
DD(AH)
(2)
Supply current in Active-halt
mode
V
DD
DD
= 3 V
(3)
LSE/32
LSE1.30
(3)
LSE/32
1.05
µA
1.20
LSE1.45
V
= 3.6 V
DD
1. No floating I/O, unless otherwise specified.
2. Based on measurements on bench with 32.768 kHz external crystal oscillator.
3. RTC clock is LSE divided by 32.
LSE/32
(3)
1.35
In the following table, data is based on characterization results, unless otherwise specified.
Table 23.Total current consumption and timing in Halt mode at V
t
WU_HSI(Halt)
t
WU_LSI(Halt)
1. TA = -40 to 85 °C, no floating I/O, unless otherwise specified.
2. Tested in production.
3. ULP=0 or ULP=1 and FWU=1 in the PWR_CSR2 register.
4. Wakeup time until start of interrupt vector fetch.
The first word of interrupt routine is fetched 4 CPU cycles after t
SymbolParameter Condition
TA = -40 °C to 25 °C350
TA = 85 °C1160
I
DD(Halt)
Supply current in Halt mode
(Ultra-low-power ULP bit =1 in
PWR_CSR2 register)
the
Supply current during wakeup
I
DD(WUHalt)
time from Halt mode (using
HSI)
(3)(4)
Wakeup time from Halt to Run
mode (using HSI)
(3)(4)
Wakeup time from Halt mode
to Run mode (using LSI)
.
WU
(1)
= 1.8 to 3.6 V
DD
TypMax Unit
1400
2800
2.4mA
4.77µs
150µs
(2)
nATA = 55 °C5802000
(2)
Doc ID 023331 Rev 165/102
Electrical parametersSTM8L052C6
Current consumption of on-chip peripherals
Table 24.Peripheral current consumption
SymbolParameter
I
DD(TIM1)
I
DD(TIM2)
I
DD(TIM3)
I
DD(TIM4)
I
DD(USART1)
I
DD(SPI1)
I
DD(I2C1)
I
DD(DMA1)
I
DD(WWDG)
I
DD(ALL)
I
DD(ADC1)
I
DD(PVD/BOR)
I
DD(BOR)
TIM1 supply current
TIM2 supply current
TIM3 supply current
TIM4 timer supply current
USART1 supply current
SPI1 supply current
I2C1 supply current
DMA1 supply current
WWDG supply current
Peripherals ON
ADC1 supply current
Power voltage detector and brownout Reset unit supply current
(5)
Brownout Reset unit supply current
(1)
(1)
(1)
(1)
(2)
(2)
(2)
(2)
(2)
(3)
(4)
(5)
including LSI supply
I
DD(IDWDG)
Independent watchdog supply current
current
excluding LSI
supply current
1. Data based on a differential IDD measurement between all peripherals OFF and a timer counter running at 16 MHz. The
CPU is in Wait mode in both cases. No IC/OC programmed, no I/O pins toggling. Not tested in production.
2. Data based on a differential I
the on-chip peripheral when clocked and not kept under reset. The CPU is in Wait mode in both cases. No I/O pins
toggling. Not tested in production.
3. Peripherals listed above the I
4. Data based on a differential I
5. Including supply current of internal reference voltage.
measurement between the on-chip peripheral in reset configuration and not clocked and
measurement between ADC in reset configuration and continuous ADC conversion.
DD
Typ.
= 3.0 V
V
DD
13
8
8
3
6
3
5
3
2
44µA/MHz
1500
2.6
2.4
0.45
0.05
Unit
µA/MHz
µA
Table 25.Current consumption under external reset
SymbolParameterConditionsTypUnit
V
= 1.8 V48
I
DD(RST)
1. All pins except PA0, PB0 and PB4 are floating under reset. PA0, PB0 and PB4 are configured with pull-up under reset.
Supply current under
external reset
(1)
All pins are externally
tied to V
DD
DD
= 3 V76
DD
= 3.6 V91
V
DD
66/102Doc ID 023331 Rev 1
µAV
STM8L052C6Electrical parameters
8.3.4 Clock and timing characteristics
HSE external clock (HSEBYP = 1 in CLK_ECKCR)
Subject to general operating conditions for VDD and TA.
Table 26.HSE external clock characteristics
SymbolParameterConditionsMinTypMaxUnit
f
HSE_ext
V
HSEH
V
HSEL
C
in(HSE)
I
LEAK_HSE
1. Data guaranteed by Design, not tested in production.
External clock source
frequency
(1)
OSC_IN input pin high level
voltage
OSC_IN input pin low level
voltage
OSC_IN input
capacitance
(1)
OSC_IN input leakage
current
116MHz
0.7 x V
V
SS
DD
V
0.3 x V
2.6pF
V
< V
IN
< V
DD
SS
LSE external clock (LSEBYP=1 in CLK_ECKCR)
Subject to general operating conditions for VDD and TA.
LSEL
in(LSE)
(2)
(2)
External clock source frequency
(1)
OSC32_IN input pin high level voltage0.7 x V
OSC32_IN input pin low level voltageV
OSC32_IN input capacitance
(1)
SS
32.768kHz
DD
0.3 x V
0.6pF
V
DD
OSC32_IN input leakage current±1µA
Table 27.LSE external clock characteristics
SymbolParameterMinTypMaxUnit
f
LSE_ext
V
LSEH
V
C
I
LEAK_LSE
1. Data guaranteed by Design, not tested in production.
2. Data based on characterization results, not tested in production.
DD
V
DD
±1µA
V
DD
Doc ID 023331 Rev 167/102
Electrical parametersSTM8L052C6
OSC_OUT
OSC_IN
f
HSE
to core
C
L1
C
L2
R
F
STM8
Resonator
Consumption
control
g
m
R
m
C
m
L
m
C
O
Resonator
g
mcrit
2 Π×f
HSE
×()
2
Rm×2Co C+()
2
=
HSE crystal/ceramic resonator oscillator
The HSE clock can be supplied with a 1 to 16 MHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and startup stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
Table 28.HSE oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
f
HSE
R
C
I
DD(HSE)
g
t
SU(HSE)
1. C=
2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with small R
Refer to crystal manufacturer for more details
High speed external oscillator
frequency
Feedback resistor200kΩ
F
(1)
Recommended load capacitance
(2)
C = 20 pF,
f
= 16 MHz
HSE oscillator power consumption
OSC
C = 10 pF,
=16 MHz
f
OSC
Oscillator transconductance3.5
m
(4)
Startup time VDD is stabilized1ms
C
=
C
is approximately equivalent to 2 x crystal C
L1
L2
LOAD
.
116MHz
20pF
2.5 (startup)
0.7 (stabilized)
2.5 (startup)
0.46 (stabilized)
(3)
3. Data guaranteed by Design. Not tested in production.
4. t
is the startup time measured from the moment it is enabled (by software) to a stabilized 16 MHz oscillation. This
SU(HSE)
value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
Figure 12. HSE oscillator circuit diagram
value.
m
(3)
mA
(3)
mA/V
HSE oscillator critical g
Rm: Motional resistance (see crystal specification), Lm: Motional inductance (see crystal specification),
: Motional capacitance (see crystal specification), Co: Shunt capacitance (see crystal specification),
C
m
=C: Grounded external capacitance
C
L1=CL2
>> g
g
m
mcrit
68/102Doc ID 023331 Rev 1
formula
m
STM8L052C6Electrical parameters
OSC_OUT
OSC_IN
f
LSE
C
L1
C
L2
R
F
STM8
Resonator
Consumption
control
g
m
R
m
C
m
L
m
C
O
Resonator
LSE crystal/ceramic resonator oscillator
The LSE clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and startup stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
Table 29.LSE oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
f
LSE
R
C
I
DD(LSE)
g
t
SU(LSE)
1. C=
2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with a small R
Refer to crystal manufacturer for more details.
Low speed external oscillator
frequency
Feedback resistorΔV = 200 mV1.2MΩ
F
(1)
Recommended load capacitance
(2)
32.768kHz
8pF
1.4
V
= 1.8 V450
LSE oscillator power consumption
Oscillator transconductance3
m
(4)
Startup time VDD is stabilized1s
C
=
C
is approximately equivalent to 2 x crystal C
L1
L2
DD
= 3 V600
DD
= 3.6 V750
V
DD
.
LOAD
(3)
(3)
3. Data guaranteed by Design. Not tested in production.
4. t
is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation.
SU(LSE)
This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
In the following table, data is based on characterization results, not tested in production,
unless otherwise specified.
Table 30.HSI oscillator characteristics
SymbolParameter
Conditions
(1)
MinTypMaxUnit
f
HSI
ACC
TRIM
t
su(HSI)
I
DD(HSI)
1. VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified.
2. Tested in production.
3. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16
(0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for
more details.
4. Guaranteed by design, not tested in production.
Frequency VDD = 3.0 V16MHz
Accuracy of HSI
oscillator (factory
HSI
calibrated)
HSI user trimming
step
(3)
VDD = 3.0 V, TA = 25 °C-1
1.8 V ≤ V
-40 °C ≤ TA ≤ 85 °C
Trimming code ≠ multiple of 160.4 0.7 %
Trimming code = multiple of 16± 1.5%
HSI oscillator setup
time (wakeup time)
HSI oscillator power
consumption
Figure 14. Typical HSI frequency vs V
≤ 3.6 V,
DD
DD
(2)
-55%
3.76
100140
(2)
1
(4)
(4)
%
µs
µA
70/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
25
27
29
31
33
35
37
39
41
43
45
1.82.12.63.13.6
V
DD
[V]
LSI
frequency
[kHz]
-40°C
25°C
85°C
ai18219V2
Low speed internal RC oscillator (LSI)
In the following table, data is based on characterization results, not tested in production.
Table 31.LSI oscillator characteristics
Symbol
Parameter
(1)
Conditions
(1)
MinTypMaxUnit
f
t
su(LSI)
I
DD(LSI)
1. VDD = 1.8 V to 3.6 V, TA = -40 to 85 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
3. This is a deviation for an individual part, once the initial frequency has been measured.
Figure 15. Typical LSI frequency vs. V
Frequency 263856kHz
LSI
LSI oscillator wakeup time 200
LSI oscillator frequency
(3)
drift
0 °C ≤ TA ≤ 85 °C-1211%
DD
(2)
µs
Doc ID 023331 Rev 171/102
Electrical parametersSTM8L052C6
8.3.5 Memory characteristics
TA = -40 to 85 °C unless otherwise specified.
Table 32.RAM and hardware registers
SymbolParameter ConditionsMinTypMaxUnit
V
RM
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
Data retention mode
Flash memory
Table 33.Flash program and data EEPROM memory
(1)
Halt mode (or Reset)1.8V
SymbolParameter ConditionsMin Typ
V
Operating voltage
DD
(all modes, read/write/erase)
f
SYSCLK
= 16 MHz1.83.6V
Programming time for 1 or 64 bytes (block)
erase/write cycles (on programmed byte)
t
prog
Programming time for 1 to 64 bytes (block)
write cycles (on erased byte)
T
=+25 °C, VDD = 3.0 V
I
Programming/ erasing consumption
prog
Data retention (program memory) after 100
erase/write cycles at TA= –40 to +85 °C
(2)
t
RET
Data retention (data memory) after 100000
erase/write cycles at T
= –40 to +85 °C
A
Erase/write cycles (program memory)
(3)
N
RW
Erase/write cycles
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
addresses a single byte.
4. Data based on characterization performed on the whole data memory.
(data memory)
A
=+25 °C, VDD = 1.8 V
T
A
T
= +85 °C30
RET
= +85 °C30
T
RET
TA = –40 to +85 °C
100
100
(1)
(1)
(1)
(1)
(4)
Max
(1)
6ms
3ms
0.7mA
years
cycles
kcycles
Unit
8.3.6 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above V
in order to give an indication of the robustness of the microcontroller in cases when
abnormal injection accidentally happens, susceptibility tests are performed on a sample
basis during device characterization.
72/102Doc ID 023331 Rev 1
(for standard pins) should be avoided during normal product operation. However,
DD
STM8L052C6Electrical parameters
Functional susceptibilty to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into the
I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error, out of spec current
injection on adjacent pins or other functional failure (for example reset, oscillator frequency
deviation, LCD levels, etc.).
The test results are given in the following table.
Table 34.I/O current injection susceptibility
Functional susceptibility
SymbolDescription
Negative
injection
Positive
injection
Unit
Injected current on true open-drain pins (PC0 and
PC1)
I
INJ
Injected current on all five-volt tolerant (FT) pins-5+0
Injected current on all 3.6 V tolerant (TT) pins-5+0
Injected current on any other pin-5+5
8.3.7 I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
-5+0
mA
Doc ID 023331 Rev 173/102
Electrical parametersSTM8L052C6
Table 35.I/O static characteristics
SymbolParameter
Input voltage on true open-drain
pins (PC0 and PC1)
Input voltage on five-volt
tolerant (FT) pins (PA7 and
V
Input low level voltage
IL
(2)
PE0)
Input voltage on 3.6 V tolerant
(TT) pins
Input voltage on any other pin
Input voltage on true open-drain
pins (PC0 and PC1)
with VDD < 2 V
Input voltage on true open-drain
pins (PC0 and PC1)
with V
Input voltage on five-volt
tolerant (FT) pins (PA7 and
PE0)
V
Input high level voltage
IH
(2)
with V
Input voltage on five-volt
tolerant (FT) pins (PA7 and
PE0)
with VDD ≥ 2 V
Conditions
≥ 2 V
DD
< 2 V
DD
(1)
Min
Typ
VSS-0.30.3 x V
-0.30.3 x V
V
SS
VSS-0.30.3 x V
V
-0.30.3 x V
SS
0.70 x V
0.70 x V
DD
DD
MaxUnit
DD
DD
V
DD
DD
5.2
5.5
5.2
V
5.5
Input voltage on 3.6 V tolerant
(TT) pins
Input voltage on any other pin
V
Schmitt trigger voltage
hys
hysteresis
(3)
I/Os200
True open drain I/Os200
V
≤ VIN≤ V
SS
DD
High sink I/Os
V
≤ VIN≤ V
I
Input leakage current
lkg
(4)
SS
True open drain I/Os
V
≤ VIN≤ V
SS
DD
DD
PA0 with high sink LED driver
0.70 x V
DD
--50
--200
--200
capability
R
C
1. VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified.
2. Data based on characterization results, not tested in production.
3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4. The max. value may be exceeded if negative current is injected on adjacent pins.
5. Not tested in production.
Weak pull-up equivalent
PU
resistor
I/O pin capacitance5pF
IO
(2)(6)
V
IN=VSS
304560kΩ
3.6
VDD+0.3
mV
(5)
(5)
nA
(5)
74/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
0
0.5
1
1.5
2
2.5
3
1.82.12.63.13.6
V
DD
[V]
V
IL
and
V
IH
[V]
-40°C
25°C
85°C
ai18220V2
0
0.5
1
1.5
2
2.5
3
1.82.12.63.13.6
V
DD
[V]
V
IL
and V
IH
[V]
-40°C
25°C
85°C
ai18221V2
6. RPU pull-up equivalent resistor based on a resistive transistor(corresponding I
Figure 18. Typical pull-up resistance RPU vs VDD with VIN=V
Figure 19. Typical pull-up current Ipu vs VDD with VIN=V
SS
SS
76/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
Output driving current
Subject to general operating conditions for V
Table 36.Output driving current (high sink ports)
I/O
SymbolParameterConditionsMinMaxUnit
Type
(1)
V
High sink
V
OH
1. The IIO current sunk must always respect the absolute maximum rating specified in Table 13 and the sum
of I
(I/O ports and control pins) must not exceed I
IO
2. The IIO current sourced must always respect the absolute maximum rating specified in Table 13 and the
sum of I
IO
Output low level voltage for an I/O pin
OL
(2)
Output high level voltage for an I/O pin
(I/O ports and control pins) must not exceed I
and TA unless otherwise specified.
DD
= +2 mA,
I
IO
= 3.0 V
V
DD
= +2 mA,
I
IO
= 1.8 V
V
DD
= +10 mA,
I
IO
= 3.0 V
V
DD
= -2 mA,
I
VSS
.
VDD
.
IO
= 3.0 V
V
DD
= -1 mA,
I
IO
= 1.8 V
V
DD
I
= -10 mA,
IO
V
= 3.0 V
DD
VDD-0.45
V
-0.45
DD
V
-0.7V
DD
0.45V
0.45V
0.7V
V
V
Table 37.Output driving current (true open drain ports)
I/O
SymbolParameterConditionsMinMaxUnit
Type
= +3 mA,
I
IO
V
= 3.0 V
(1)
V
Output low level voltage for an I/O pin
OL
Open drain
1. The IIO current sunk must always respect the absolute maximum rating specified in Table 13 and the sum
of I
(I/O ports and control pins) must not exceed I
IO
VSS
.
DD
I
= +1 mA,
IO
V
DD
= 1.8 V
0.45
0.45
Table 38.Output driving current (PA0 with high sink LED driver capability)
I/O
SymbolParameterConditionsMinMaxUnit
Type
= +20 mA,
I
(1)
V
IR
1. The IIO current sunk must always respect the absolute maximum rating specified in Table 13 and the sum
of IIO (I/O ports and control pins) must not exceed I
Output low level voltage for an I/O pin
OL
VSS
.
V
IO
DD
= 2.0 V
0.45V
V
Doc ID 023331 Rev 177/102
Electrical parametersSTM8L052C6
0
0.25
0.5
0.75
1
02468101214161820
I
OL
[mA]
V
OL
[V]
-40°C
25°C
85°C
ai18226V2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0123456 78
I
OL
[mA]
V
OL
[V]
-40°C
25°C
85°C
ai18227V2
ai18228V2
0
0.1
0.2
0.3
0.4
0.5
01234567
I
OL
[mA]
V
OL
[V]
-40°C
25°C
85°C
0
0.1
0.2
0.3
0.4
0.5
01234567
I
OL
[mA]
V
OL
[V]
-40°C
25°C
85°C
BJ7
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
0 2 4 6 8 101214161820
I
OH
[mA]
V
DD
- V
OH
[V]
-40°C
25°C
85°C
ai12830V2
0
0.1
0.2
0.3
0.4
0.5
012345 67
I
OH
[mA]
V
DD
- V
OH
[V]
-40°C
25°C
85°C
BJ7
Figure 20. Typ. VOL @ VDD = 3.0 V (high sink
ports)
Figure 22. Typ. VOL @ VDD = 3.0 V (true open
drain ports)
Figure 21. Typ. VOL @ VDD = 1.8 V (high sink
ports)
Figure 23. Typ. VOL @ VDD = 1.8 V (true open
drain ports)
Figure 24. Typ. V
DD - VOH
sink ports)
78/102Doc ID 023331 Rev 1
@ VDD = 3.0 V (high
Figure 25. Typ. V
sink ports)
DD - VOH
@ VDD = 1.8 V (high
STM8L052C6Electrical parameters
30
35
40
45
50
55
60
1.822.22.42.62.833.23.43.6
V
DD
[V]
Pull-up
resistance
[k
Ω
]
-40°C
25°C
85°C
ai18224V2
NRST pin
Subject to general operating conditions for VDD and TA unless otherwise specified.
Table 39.NRST
SymbolParameterConditionsMin
pin characteristics
Typ
MaxUnit
V
IL(NRST)
V
IH(NRST)
NRST input low level voltage
NRST input high level voltage
(1)
(1)
IOL = 2 mA
for 2.7 V ≤ V
V
(3)
(3)
(1)
I
= 1.5 mA
OL
for V
DD
V
OL(NRST)
V
HYST
R
PU(NRST)
V
F(NRST)
V
NF(NRST)
1. Data based on characterization results, not tested in production.
2. 200 mV min.
3. Data guaranteed by design, not tested in production.
NRST output low level voltage
NRST input hysteresis
(3)
NRST pull-up equivalent resistor
(1)
NRST input filtered pulse
NRST input not filtered pulse
Figure 26. Typical NRST pull-up resistance RPU vs VDD
Figure 27. Typical NRST pull-up current Ipu vs VDD
The reset network shown in Figure 28 protects the device against parasitic resets. The user
must ensure that the level on the NRST pin can go below the V
IL(NRST)
max. level specified
in Ta bl e 3 9 . Otherwise the reset is not taken into account internally.
For power consumption sensitive applications, the external reset capacitor value can be
reduced to limit the charge/discharge current. If the NRST signal is used to reset the
external circuitry, attention must be paid to the charge/discharge time of the external
capacitor to fulfill the external devices reset timing conditions. The minimum recommended
capacity is 10 nF.
Figure 28. Recommended NRST pin configuration
80/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
8.3.8 Communication interfaces
SPI1 - Serial peripheral interface
Unless otherwise specified, the parameters given in Ta bl e 4 0 are derived from tests
performed under ambient temperature, f
conditions summarized in Section 8.3.1. Refer to I/O port characteristics for more details on
the input/output alternate function characteristics (NSS, SCK, MOSI, MISO).
Table 40.SPI1 characteristics
SymbolParameterConditions
SYSCLK
frequency and VDD supply voltage
(1)
MinMaxUnit
f
SCK
1/t
c(SCK)
t
r(SCK)
t
f(SCK)
t
su(NSS)
t
h(NSS)
t
w(SCKH)
t
w(SCKL)
t
su(MI)
t
su(SI)
t
h(MI)
t
h(SI)
t
a(SO)
t
dis(SO)
t
v(SO)
t
v(MO)
t
h(SO)
t
h(MO)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)(3)
(2)(4)
(2)
(2)
(2)
(2)
SPI1 clock frequency
Master mode 08
Slave mode08
SPI1 clock rise and fall
time
NSS setup time Slave mode4 x 1/f
Capacitive load: C = 30 pF-30ns
SYSCLK
NSS hold timeSlave mode80-
(2)
SCK high and low time
Master mode,
MASTER
= 8 MHz, f
f
SCK
= 4 MHz
105145
Master mode30-
Data input setup time
Slave mode3-
Master mode15-
Data input hold time
Slave mode0-
Data output access timeSlave mode-3x 1/f
Data output disable timeSlave mode30-
Data output valid timeSlave mode (after enable edge)-60
Data output valid time
Master mode (after enable
edge)
-20
Slave mode (after enable edge)15-
Data output hold time
Master mode (after enable
edge)
1-
MHz
-
SYSCLK
1. Parameters are given by selecting 10 MHz I/O output frequency.
2. Values based on design simulation and/or characterization results, and not tested in production.
3. Min time is for the minimum time to drive the output and max time is for the maximum time to validate the data.
4. Min time is for the minimum time to invalidate the output and max time is for the maximum time to put the data in Hi-Z.
Doc ID 023331 Rev 181/102
Electrical parametersSTM8L052C6
ai14134
SCK Input
CPHA=0
MOSI
INPUT
MISO
OUT PUT
CPHA=0
MS B O U T
MSB IN
BI T6 O UT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
NSS input
t
SU(NSS)
t
c(SCK)
t
h(NSS)
t
a(SO)
t
w(SCKH)
t
w(SCKL)
t
v(SO)
t
h(SO)
t
r(SCK)
t
f(SCK)
t
dis(SO)
t
su(SI)
t
h(SI)
ai14135
SCK Input
CPHA=1
MOSI
INPUT
MISO
OUT PUT
CPHA=1
MS B O U T
MSB IN
BI T6 O UT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
t
SU(NSS)
t
c(SCK)
t
h(NSS)
t
a(SO)
t
w(SCKH)
t
w(SCKL)
t
v(SO)
t
h(SO)
t
r(SCK)
t
f(SCK)
t
dis(SO)
t
su(SI)
t
h(SI)
NSS input
Figure 29. SPI1 timing diagram - slave mode and CPHA=0
Figure 30. SPI1 timing diagram - slave mode and CPHA=1
1. Measurement points are done at CMOS levels: 0.3V
and 0.7V
DD
DD
.
(1)
82/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
ai14136
SCK output
CPHA=0
MOSI
OUTUT
MISO
INP U T
CPHA=0
MSBIN
M SB OUT
BIT6 IN
LSB OUT
LSB IN
CPOL=0
CPOL=1
B I T1 OUT
NSS input
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
r(SCK)
t
f(SCK)
t
h(MI)
High
SCK output
CPHA=1
CPHA=1
CPOL=0
CPOL=1
t
su(MI)
t
v(MO)
t
h(MO)
Figure 31. SPI1 timing diagram - master mode
(1)
1. Measurement points are done at CMOS levels: 0.3V
and 0.7V
DD
DD
.
Doc ID 023331 Rev 183/102
Electrical parametersSTM8L052C6
I2C - Inter IC control interface
Subject to general operating conditions for V
The STM8L I
2
C interface (I2C1) meets the requirements of the Standard I2C communication
DD
, f
SYSCLK
, and TA unless otherwise specified.
protocol described in the following table with the restriction mentioned below:
Refer to I/O port characteristics for more details on the input/output alternate function
characteristics (SDA and SCL).
Table 41.I2C characteristics
SymbolParameter
t
w(SCLL)
t
w(SCLH)
t
su(SDA)
t
h(SDA)
t
r(SDA)
t
r(SCL)
t
f(SDA)
t
f(SCL)
t
h(STA)
t
su(STA)
t
su(STO)
t
w(STO:STA)
C
1. f
SYSCLK
Data based on standard I
2.
SCL clock low time4.71.3
SCL clock high time4.00.6
SDA setup time250100
SDA data hold time0 0900
SDA and SCL rise time1000300
SDA and SCL fall time300300
START condition hold time4.00.6
Repeated START condition setup
time
STOP condition setup time4.00.6 μs
STOP to START condition time (bus
free)
Capacitive load for each bus line400400pF
b
must be at least equal to 8 MHz to achieve max fast I2C speed (400 kHz).
2
C protocol requirement, not tested in production.
Standard mode
I2C
(2)
Min
Max
(2)
Fast mode I
(2)
Min
4.70.6
4.71.3μs
2C(1)
Max
(2)
Unit
μs
ns
μs
Note:For speeds around 200 kHz, the achieved speed can have a± 5% tolerance
For other speed ranges, the achieved speed can have a± 2% tolerance
The above variations depend on the accuracy of the external components used.
84/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
REPEATED START
START
STOP
START
t
f(SDA)
t
r(SDA)
t
su(SDA)th(SDA)
t
f(SCL)
t
r(SCL)
t
w(SCLL)
t
w(SCLH)
t
h(STA)
t
su(STO)
t
su(STA)tw(STO:STA)
SDA
SCL
4.7kΩ
SDA
STM8L
SCL
V
DD
100Ω
100Ω
V
DD
4.7kΩ
I2CBUS
2
Figure 32.
Typical application with I
C bus and timing diagram
1. Measurement points are done at CMOS levels: 0.3 x VDD and 0.7 x V
1)
DD
Doc ID 023331 Rev 185/102
Electrical parametersSTM8L052C6
8.3.9 LCD controller
In the following table, data is guaranteed by design. Not tested in production.
Table 42.LCD characteristics
SymbolParameterMinTyp Max.Unit
V
LCD
V
LCD0
V
LCD1
V
LCD2
V
LCD3
V
LCD4
V
LCD5
V
LCD6
V
LCD7
C
EXT
I
DD
(2)
R
HN
(3)
R
LN
V
33
V
23
V
12
V
13
V
0
1. LCD enabled with 3 V internal booster (LCD_CR1 = 0x08), 1/4 duty, 1/3 bias, division ratio= 64, all pixels
active, no LCD connected.
2. RHN is the total high value resistive network.
3. RLN is the total low value resistive network.
High value resistive network (low drive)6.6MΩ
Low value resistive network (high drive)360kΩ
Segment/Common higher level voltageV
Segment/Common lowest level voltage0V
LCD external voltage3.6V
LCD internal reference voltage 02.6V
LCD internal reference voltage 12.7V
LCD internal reference voltage 22.8V
LCD internal reference voltage 32.9V
LCD internal reference voltage 43.0V
LCD internal reference voltage 53.1V
LCD internal reference voltage 63.2V
LCD internal reference voltage 73.3V
V
external capacitance0.12µF
LCD
Supply current
Supply current
Segment/Common 2/3 level voltage2/3V
Segment/Common 1/2 level voltage1/2V
Segment/Common 1/3 level voltage1/3V
(1)
at VDD = 1.8 V
(1)
at VDD = 3 V3µA
3µA
LCDx
LCDx
LCDx
LCDx
V
V
V
V
VLCD external capacitor
The application can achieve a stabilized LCD reference voltage by connecting an external
capacitor C
86/102Doc ID 023331 Rev 1
EXT
to the V
LCD
pin. C
is specified in Ta bl e 4 2 .
EXT
STM8L052C6Electrical parameters
8.3.10 Embedded reference voltage
In the following table, data is based on characterization results, not tested in production,
unless otherwise specified.
Table 43.Reference voltage characteristics
SymbolParameterConditionsMinTyp Max.Unit
I
REFINT
T
S_VREFINT
I
BUF
V
REFINT out
I
LPBUF
I
REFOUT
C
REFOUT
t
VREFINT
t
BUFEN
ACC
STAB
(1)(2)
(2)
(2)
(2)
(2)
VREFINT
VREFINT
Internal reference voltage
consumption
ADC sampling time when reading
the internal reference voltage
Internal reference voltage buffer
consumption (used for ADC)
Reference voltage output1.202
Internal reference voltage low
power buffer consumption
Buffer output current
(4)
1.4µA
510µs
13.525µA
(3)
1.2241.242
7301200nA
(3)
1µA
Reference voltage output load50pF
Internal reference voltage startup
time
Internal reference voltage buffer
startup time once enabled
Accuracy of V
REFINT
VREFINT_Factory_CONV byte
Stability of V
REFINT
(1)
stored in the
over
(5)
temperature
Stability of V
REFINT
over
temperature
-40 °C ≤ TA ≤
85 °C
0 °C ≤ TA ≤ 50
°C
23ms
10µs
± 5mV
2050ppm/°C
20ppm/°C
V
STAB
VREFINT
1. Defined when ADC output reaches its final value ±1/2LSB
2. Data guaranteed by Design. Not tested in production.
3. Tested in production at V
4. To guaranty less than 1%
5. Measured at V
Stability of V
hours
= 3 V ±10 mV.
DD
V
REFOUT
= 3 V ±10 mV. This value takes into account VDD accuracy and ADC conversion accuracy.
DD
REFINT
deviation.
after 1000
Doc ID 023331 Rev 187/102
TBDppm
Electrical parametersSTM8L052C6
8.3.11 12-bit ADC1 characteristics
In the following table, data is guaranteed by design, not tested in production.
Table 44.ADC1 characteristics
SymbolParameter ConditionsMinTypMaxUnit
V
DDA
V
REF+
V
REF-
I
VDDA
I
VREF+
V
AIN
T
R
AIN
C
ADC
f
ADC
f
CONV
Analog supply voltage1.83.6V
Reference supply
voltage
Lower reference voltage
Current on the VDDA
input pin
2.4 V ≤ V
1.8 V ≤ V
≤ 3.6 V
DDA
≤ 2.4 VV
DDA
2.4
V
DDA
DDA
V
SSA
10001450µA
700
Current on the VREF+
input pin
400
(peak)
450
(average)
Conversion voltage
range
Temperature range-4085°C
A
External resistance on
V
AIN
Internal sample and
hold capacitor
ADC sampling clock
frequency
on PF0 fast channel
on all other channels
on PF0 fast channel
on all other channels
2.4 V≤ V
DDA
≤ 3.6 V
without zooming
1.8 V≤ V
DDA
≤ 2.4 V
with zooming
V
on PF0 fast
AIN
channel
(2)
0
V
REF+
50
16pF
0.32016MHz
0.3208MHz
(4)(5)
1
12-bit conversion rate
V
on all other
AIN
channels
760
(1)
(3)
(4)(5)
(1)
V
V
V
µA
µA
kΩ
MHz
kHz
f
TRIG
t
LAT
External trigger
frequency
External trigger latency3.51/f
88/102Doc ID 023331 Rev 1
t
conv
1/f
ADC
SYSCLK
STM8L052C6Electrical parameters
Table 44.ADC1 characteristics (continued)
SymbolParameter ConditionsMinTypMaxUnit
V
on PF0 fast
t
S
t
conv
t
WKUP
t
IDLE
t
VREFINT
Sampling time
12-bit conversion time
Wakeup time from OFF
state
Time before a new
(6)
conversion
Internal reference
voltage startup time
AIN
channel
< 2.4 V
V
DDA
on PF0 fast
V
AIN
channel
2.4 V ≤ V
on slow channels
V
AIN
V
DDA
V
on slow channels
AIN
2.4 V ≤ V
≤ 3.6 V
DDA
< 2.4 V
≤ 3.6 V
DDA
16 MHz1
= +25 °C1
T
A
T
= +70 °C20
A
0.43
0.22
0.86
0.41
(4)(5)
(4)(5)
(4)(5)
(4)(5)
12 + t
(4)
S
µs
µs
µs
µs
1/f
ADC
µs
3µs
(7)
(7)
refer to
Ta bl e 4 3
s
ms
ms
1. The current consumption through V
- one constant (max 300 µA)
- one variable (max 400 µA), only during sampling time + 2 first conversion pulses.
So, peak consumption is 300+400 = 700 µA and average consumption is 300 + [(4 sampling + 2) /16] x 400 = 450 µA at
1Msps
2. V
3. Guaranteed by design, not tested in production.
4. Minimum sampling and conversion time is reached for maximum Rext = 0.5 kΩ.
5. Value obtained for continuous conversion on fast channel.
6. The time between 2 conversions, or between ADC ON and the first conversion must be lower than t
7. The t
REF-
or V
IDLE
must be tied to ground.
DDA
maximum value is ∞ on the “Z” revision code of the device.
is composed of two parameters:
REF
IDLE.
Doc ID 023331 Rev 189/102
Electrical parametersSTM8L052C6
In the following three tables, data is guaranteed by characterization result, not tested in
production.
Table 45.ADC1 accuracy with V
SymbolParameterConditionsTypMaxUnit
DNLDifferential non linearity
INLIntegral non linearity
TUETotal unadjusted error
OffsetOffset error
GainGain error
= 3.3 V to 2.5 V
DDA
= 16 MHz11.6
f
ADC
f
= 8 MHz11.6
ADC
= 4 MHz11.5
f
ADC
= 16 MHz1.22
f
ADC
f
= 8 MHz1.21.8
ADC
= 4 MHz1.21.7
f
ADC
= 16 MHz2.23.0
f
ADC
f
= 8 MHz1.82.5
ADC
= 4 MHz1.82.3
f
ADC
f
= 16 MHz1.52
ADC
= 8 MHz11.5
f
ADC
= 4 MHz0.71.2
f
ADC
f
= 16 MHz
ADC
= 8 MHz
ADC
= 4 MHz
f
ADC
LSB
LSB
11.5f
Table 46.ADC1 accuracy with V
SymbolParameterTypMaxUnit
DNLDifferential non linearity12LSB
INL
TUE
Integral non linearity
Total unadjusted error
OffsetOffset error12LSB
GainGain error1.53LSB
Table 47.ADC1 accuracy with V
SymbolParameterTypMaxUnit
DNLDifferential non linearity12LSB
INL
TUE
Integral non linearity
Total unadjusted error
OffsetOffset error23LSB
GainGain error23LSB
= 2.4 V to 3.6 V
DDA
= V
DDA
REF+
= 1.8 V to 2.4 V
1.73LSB
24LSB
23LSB
35LSB
90/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
E
O
E
G
1LSB
IDEAL
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
T
=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
E
O
=Offset Error: deviation between the first actual
transition and the first ideal one.
E
G
=Gain Error: deviation between the last ideal
transition and the last actual one.
E
D
=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
E
L
=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
4095
4094
4093
5
4
3
2
1
0
7
6
1234567
4093 4094 4095 4096
(1)
(2)
E
T
E
D
E
L
(3)
V
DDA
V
SSA
ai14395b
V
REF+
4096
(or depending on package)]
V
DDA
4096
[1LSB
IDEAL =
ai17090e
STM8L05xxx
V
DD
AINx
IL±50 nA
0.6 V
V
T
R
AIN
(1)
C
parasitic
V
AIN
0.6 V
V
T
R
ADC
C
ADC
(1)
12-bit
converter
Sample and hold ADC
converter
Figure 33. ADC1 accuracy characteristics
Figure 34. Typical connection diagram using the ADC
1. Refer to Ta b le 4 4 for the values of R
2. C
represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
parasitic
pad capacitance (roughly 7 pF). A high C
this, f
should be reduced.
ADC
and C
AIN
Doc ID 023331 Rev 191/102
.
ADC
value will downgrade conversion accuracy. To remedy
parasitic
Electrical parametersSTM8L052C6
ADC clock
Sampling (n cycles)
Conversion (12 cycles)
I
ref+
300µA
700µA
Figure 35. Maximum dynamic current consumption on V
supply pin during ADC
REF+
conversion
Table 48.R
Ts
(cycles)
AIN
Ts
(µs)
max for f
2.4 V < V
= 16 MHz
ADC
Slow channelsFast channels
< 3.6 V 1.8 V < V
DDA
40.25Not allowedNot allowed0.7Not allowed
(1)
R
max (kohm)
AIN
< 2.4 V 2.4 V < V
DDA
< 3.3 V 1.8 V < V
DDA
DDA
< 2.4 V
90.56250.8Not allowed2.01.0
1612.00.84.03.0
241.53.01.86.04.5
4836.84.015.010.0
96615.010.030.020.0
1921232.025.050.040.0
3842450.050.050.050.0
1. Guaranteed by design, not tested in production.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 36 or Figure 37,
depending on whether V
is connected to V
REF+
or not. Good quality ceramic 10 nF
DDA
capacitors should be used. They should be placed as close as possible to the chip.
92/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
V
REF+
S
STM8L
V
DDA
V
SSA/VREF-
1 μF // 10 nF
F
1 μF // 10 nF
Supply
External
reference
ai17031b
V
REF+/VDDA
STM8L
1 μF // 10 nF
V
REF–/VSSA
ai17032b
Supply
Figure 36. Power supply and reference decoupling (V
// 10 n
Figure 37. Power supply and reference decoupling (V
not connected to V
REF+
TM8L
connected to V
REF+
DDA
DDA
)
)
Doc ID 023331 Rev 193/102
Electrical parametersSTM8L052C6
8.3.12 EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000 standard.
●FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
and VSS
DD
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 49.EMS data
SymbolParameterConditions
V
= 3.3 V, TA = +25 °C,
DD
= 16 MHz,
f
CPU
conforms to IEC 61000
= 3.3 V, TA = +25 °C,
V
DD
= 16 MHz,
f
CPU
conforms to IEC 61000
V
FESD
V
EFTB
Voltage limits to be applied on
any I/O pin to induce a functional
disturbance
Fast transient voltage burst limits
to be applied through 100 pF on
and V
V
DD
functional disturbance
pins to induce a
SS
Using HSI
Using HSE2B
Level/
Class
3B
4A
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm IEC61967-2 which specifies the board and the loading of each pin.
94/102Doc ID 023331 Rev 1
STM8L052C6Electrical parameters
Table 50.EMI data
SymbolParameterConditions
S
EMI
1. Not tested in production.
Peak level
(1)
V
DD
TA = +25 °C,
LQFP32
conforming to
IEC61967-2
= 3.6 V,
Monitored
frequency band
Max vs.
Unit
16 MHz
0.1 MHz to 30 MHz-3
dBμV30 MHz to 130 MHz9
130 MHz to 1 GHz4
SAE EMI Level2-
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 51.ESD absolute maximum ratings
SymbolRatingsConditions
V
ESD(HBM)
V
ESD(CDM)
1. Data based on characterization results, not tested in production.
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
= +25 °C
T
A
Maximum
(1)
value
2000
500
Static latch-up
●LU: 3 complementary static tests are required on 6 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
Table 52.Electrical sensitivities
SymbolParameterClass
LUStatic latch-up classII
Unit
V
Doc ID 023331 Rev 195/102
Electrical parametersSTM8L052C6
8.4 Thermal characteristics
The maximum chip junction temperature (T
) must never exceed the values given in
Jmax
Table 15: General operating conditions on page 55.
The maximum chip-junction temperature, T
, in degree Celsius, may be calculated using
Jmax
the following equation:
T
Jmax
= T
Amax
+ (P
Dmax
x ΘJA)
Where:
●T
●Θ
●P
●P
is the maximum ambient temperature in °C
Amax
is the package junction-to-ambient thermal resistance in °C/W
JA
is the sum of P
Dmax
is the product of I
INTmax
INTmax
DD
and P
I/Omax (PDmax
= P
INTmax
+ P
and VDD, expressed in Watts. This is the maximum chip
I/Omax
)
internal power.
●P
represents the maximum power dissipation on output pins
I/Omax
Where:
P
I/Omax =
taking into account the actual V
Σ (VOL*IOL) + Σ((VDD-VOH)*I OH),
and VOH/IOH of the I/Os at low and high level in
OL/IOL
the application.
Table 53.Thermal characteristics
SymbolParameterValueUnit
Θ
JA
Thermal resistance junction-ambient
LQFP 48- 7 x 7mm
(1)
65°C/W
1. Thermal resistances are based on JEDEC JESD51-2 with 4-layer PCB in a natural convection
environment.
96/102Doc ID 023331 Rev 1
STM8L052C6Package characteristics
9 Package characteristics
9.1 ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.