ST STGP7NB60M, STGD7NB60M User Manual
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STGP7NB60M - STGD7NB60M
N-CHANNEL 7A - 600V TO-220 / DPAK
PowerMESH™ IGBT
TYPE
STGP7NB60M
STGD7NB60M
■ HIGH INPUT IMPEDANCE
■ LOW ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ HIGH FREQUENCY OPERATION
■ CO-PACKAGED WITH TURBOSWITCH™
V
CES
600 V
600 V
V
CE(sat) (Max)
@25°C
< 1.9 V
< 1.9 V
cesat
)
I
C
@100°C
7A
7A
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanc ed family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "M" identifies a family optimized to
achieve very low switc hing switching times for high
frequency applications (<20KHZ)
3
1
TO-220
3
2
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ MOTOR CONTROLS
■ SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGP7NB60M GP7NB60M TO-220 TUBE
STGD7NB60MT4 GD7NB60M DPAK TAPE & REEL
1/11June 2003
STGP7NB60M - STG D7NB60M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220 DPAK
V
CES
V
I
I
I
CM
P
TOT
T
T
() Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.56 1.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
Collector-Emitter Voltage (VGS=0)
Gate-Emitter Voltage ±20 V
GE
Collector Current (continuous) at TC=25°C
C
Collector Current (continuous) at TC=100°C
C
()
Collector Current (pulsed) 56 A
Total Dissipation at TC= 25°C
80 70 W
600 V
14 A
7A
Derating Factor 0.64 0.56 W/°C
Storage Temperature – 55 to 150 °C
stg
Max. Operating Junction Temperature 150 °C
j
TO-220 DPAK
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
IC= 250 µA, VGE=0 600 V
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating, TC=25°C
CE
VCE= Max Rating, TC= 125 °C
V
=±20V,VCE= 0 ±100 nA
GE
50 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VGE= 15V, IC=7A
VGE= 15V, IC= 7 A, Tj =125°C
=250µA
35V
1.5 1.9 V
1.2 V
2/11
STGP7NB60M - STG D7NB60M
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
ies
C
oes
C
res
Forward Transconductance
Input Capacitance
Output Capacitance 85 pF
Reverse Transfer
Capacitance
Q
Q
ge
Q
gc
I
CL
Total Gate Charge
g
Gate-Emitter Charge
Gate-Collector Charge
Latching Current V
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
Eon
r
Turn-on Delay Time
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
VCE=25V,Ic=7A
V
=25V,f=1MHz,VGE=0
CE
= 480V, IC=7A,
V
CE
=15V
V
GE
= 480 V, VGE=15V
clamp
Tj = 125°C , RG=10Ω
= 480 V, IC=7ARG=10Ω
V
CC
,VGE=15V
=480V,IC=7ARG=10Ω
V
CC
V
= 15 V,Tj =125°C
GE
5S
550 pF
13 pF
37
50
4.2
13
28 A
13
6
1000
50
nC
nC
nC
ns
ns
A/µs
µJ
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
t
r(Voff
t
d(off
t
f
(**)
E
off
E
ts
t
c
t
r(Voff
td(
off
t
f
E
(**)
off
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time 95 ns
)
Delay Time 155 ns
Fall Time 240 ns
Turn-off Switching Loss 455
Total Switching Loss 500
Cross-over Time
)
Off Voltage Rise Time 215 ns
)
Delay Time 280 ns
Fall Time 390 ns
Turn-off Switching Loss 870
Total Switching Loss 920
=480V,IC=7A,
cc
R
=10Ω,VGE=15V
G
V
=480V,IC=7A,
cc
R
=10Ω,VGE=15V
G
Tj = 125 °C
340 ns
610 ns
µJ
µJ
µJ
µJ
3/11
STGP7NB60M - STG D7NB60M
Output Characteristics
Transfer Characteri stics
Normalized Co llecto r-Emitter On Voltage vs Temp .Transconductance
Collector-Emitter On Voltage vs Collector Current
4/11
Gate Thresho ld vs Tempe rature
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