Datasheet STGP7NB60M, STGD7NB60M Datasheet (ST)

查询STGD7NB60MT4供应商

STGP7NB60M - STGD7NB60M

N-CHANNEL 7A - 600V TO-220 / DPAK

PowerMESH™ IGBT

TYPE

STGP7NB60M
STGD7NB60M

■ HIGH INPUT IMPEDANCE

■ LOW ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ HIGH FREQUENCY OPERATION

■ CO-PACKAGED WITH TURBOSWITCH™

V

CES

600 V
600 V

V

CE(sat) (Max)

@25°C
< 1.9 V

< 1.9 V

cesat

)

I

C

@100°C

7A
7A

ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de­signed an advanc ed family of IGBTs, the Power­MESH™ IGBTs, with outstanding perfomances.
The suffix "M" identifies a family optimized to
achieve very low switc hing switching times for high
frequency applications (<20KHZ)

3

1

TO-220

3

2

1

DPAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■ MOTOR CONTROLS

■ SMPS AND PFC AND BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STGP7NB60M GP7NB60M TO-220 TUBE

STGD7NB60MT4 GD7NB60M DPAK TAPE & REEL

1/11June 2003

STGP7NB60M - STG D7NB60M

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

TO-220 DPAK

V

CES

V

I
I

I

CM

P

TOT

T

T

() Pulse width limited by safe operating area

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.56 1.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W

Collector-Emitter Voltage (VGS=0)
Gate-Emitter Voltage ±20 V

GE

Collector Current (continuous) at TC=25°C

C

Collector Current (continuous) at TC=100°C

C

()

Collector Current (pulsed) 56 A
Total Dissipation at TC= 25°C

80 70 W

600 V

14 A

7A

Derating Factor 0.64 0.56 W/°C
Storage Temperature – 55 to 150 °C

stg

Max. Operating Junction Temperature 150 °C

j

TO-220 DPAK

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter Breakdown

IC= 250 µA, VGE=0 600 V

Voltage

I

CES

I

GES

Collector cut-off

=0)

(V

GE

Gate-Emitter Leakage
Current (V

CE

=0)

V

= Max Rating, TC=25°C

CE

VCE= Max Rating, TC= 125 °C
V

=±20V,VCE= 0 ±100 nA

GE

50 µA

100 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(sat)

Gate Threshold Voltage
Collector-Emitter Saturation

Voltage

V

CE=VGE,IC

VGE= 15V, IC=7A
VGE= 15V, IC= 7 A, Tj =125°C

=250µA

35V

1.5 1.9 V

1.2 V

2/11

STGP7NB60M - STG D7NB60M

ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

g

fs

C

ies

C

oes

C

res

Forward Transconductance
Input Capacitance
Output Capacitance 85 pF
Reverse Transfer

Capacitance

Q

Q

ge

Q

gc

I

CL

Total Gate Charge

g

Gate-Emitter Charge
Gate-Collector Charge

Latching Current V

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

Eon

r

Turn-on Delay Time
Rise Time

Turn-on Current Slope

on

Turn-on Switching Losses

VCE=25V,Ic=7A
V

=25V,f=1MHz,VGE=0

CE

= 480V, IC=7A,

V

CE

=15V

V

GE

= 480 V, VGE=15V

clamp

Tj = 125°C , RG=10Ω

= 480 V, IC=7ARG=10Ω

V

CC

,VGE=15V

=480V,IC=7ARG=10Ω

V

CC

V

= 15 V,Tj =125°C

GE

5S

550 pF

13 pF

37

50

4.2
13

28 A

13

6

1000

50

nC
nC
nC

ns
ns

A/µs

µJ

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

c

t

r(Voff

t

d(off

t

f

(**)

E

off

E

ts

t

c

t

r(Voff

td(

off

t

f

E

(**)

off

E

ts

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Cross-over Time

)

Off Voltage Rise Time 95 ns

)

Delay Time 155 ns
Fall Time 240 ns
Turn-off Switching Loss 455
Total Switching Loss 500
Cross-over Time

)

Off Voltage Rise Time 215 ns

)

Delay Time 280 ns
Fall Time 390 ns
Turn-off Switching Loss 870
Total Switching Loss 920

=480V,IC=7A,

cc

R

=10Ω,VGE=15V

G

V

=480V,IC=7A,

cc

R

=10Ω,VGE=15V

G

Tj = 125 °C

340 ns

610 ns

µJ
µJ

µJ
µJ

3/11

STGP7NB60M - STG D7NB60M

Output Characteristics

Transfer Characteri stics

Normalized Co llecto r-Emitter On Voltage vs Temp .Transconductance

Collector-Emitter On Voltage vs Collector Current

4/11

Gate Thresho ld vs Tempe rature

STGP7NB60M - STG D7NB60M

Normalized Breakdown Voltage vs Temperature

Gate Charge vs G ate-Emitter Voltage

Capacitance Variations

Total Switching Losses vs Gate Resistance

Total Switching Lo sses vs Temperature

Total Switching L osses vs Collector Current

5/11

STGP7NB60M - STG D7NB60M

Turn-Off SOA

Thermal Imped ance for DPAKThermal Impedance for TO-220

6/11

STGP7NB60M - STG D7NB60M

Fig. 2: Test Circuit For Induc t ive Load SwitchingFig. 1: Gate Charge test Circuit

7/11

STGP7NB60M - STG D7NB60M

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8/11

STGP7NB60M - STG D7NB60M

P032P_B

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

9/11

STGP7NB60M - STG D7NB60M

DPAK FOOTPRINT

All dimensions are in m illimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

are in millimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968

T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6. 8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7. 4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3. 9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1. 9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales ty pe

10/11

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

STGP7NB60M - STG D7NB60M

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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11/11