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查询SMTHDT120供应商
ApplicationSpecific Discretes
A.S.D.
FEATURES
UND IRECTIONA L CROWBA R
PROTECTION.
PEAKPULSECURRENT:
IPP= 75A , 10/1000µs.
HOLDINGCURRENT= 150mA.
BREAKDOWNVOLTAGE:
SMTHDT58= 58V.
SMTHDT80= 80V.
SMTHDT120= 120V.
PACKAGES:
SMTHDTxx= SURFACEMOUNTPACKAGE.
DESCRIPTION:TRIBALANCED PROTECTION
Dedicated protection devices for ISDN LINE
CARDand high speeddata telecomlines.
Usedwiththerecommendedconfigurationusing
3 components,theywill provide=
-Dualbidirectionnalprotection,with fixed
breakdownvoltage in bothcommonand
differentialmodes.
-Low capacitancesfromlines to ground.
-Verygood capacitancebalance: ∆C= 30 pF.
TM
DISCRETE SOLUTION FOR ISDN PROTECTION
SMTHDTxx
TRISIL
SMC
FUNCTIONAL DIAGRAM.
A
K
ABSOLUTE RATINGS(limitingvalues) (-40°C ≤ T
Symbol Parameter Value Unit
I
PP
I
TSM
di/dt
dv/dt
T
stg
T
THERMAL RESISTANCES
Symbol Parameter Value Unit
(j-l)
R
th
April 1999 - Ed: 1A
Peakpulse current
Non repetitive surge peak on-state
current
Criticalrateof riseof on-statecurrent
Criticalrateof riseof off-statevoltage
Storageand operatingjunctiontemperaturerange
j
Junction-leadsThermalResistance
≤ +85°C)
amb
10/1000µs
8/20 µs
tp= 20ms 30 A
Nonrepetitive 100 A/µs
67%V
BR
SMC 200 °C/W
75
150
5KV/µs
- 40 to + 150
+ 150
A
°C
°C
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SMTHDTxx
Symbol Parameter
V
RM
V
BR
V
BO
I
H
V
T
V
F
I
BO
I
PP
V
F
Stand-offvoltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
On-statevoltage
ForwardVoltageDrop
Breakovercurrent
Peak pulsecurrent
ForwardVoltageDrop
VV
BOVBR
V
RM
PARAMETERSRELATED TO THE DIODE.
Parameter Test conditions Value Unit
V
F
IF= 5A, TP=500µs5V
I
I
F
I
RM
1mA
I
H
I
BO
I
T
I
PP
V
V
T
F
V
PARAMETERSRELATED TO THE PROTECTIONTRISIL.
Types IR@V
RM
V
BR @IR
V
BO
I
BO
IH VT C
max min max min max min max max
note1 note1 note1 note1 note2 note3
µA V V mA V mA mA mA V pF
SMTHDT58 10 56 58 1 80 150 800 150 5 400
SMTHDT80 10 68 80 1 120 150 800 150 5 250
SMTHDT120 10 102 120 1 180 150 800 150 5 200
Allparameters tested at 25 °C, except whereindicated.
Note 1: Seethe reference test circuitfor I
Note 2: Squarepulse Tp = 500µs-I
Note 3: V
= 1V,F =1MHz.
R
T
and VBOparameters.
H,IBO
= 5A.
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