ST SMP75-8 User Manual

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FEATURES
Bidirectional surge arrestor.
Very low stand-off voltage : VRM=8V.
High repetitive surge capability :
IPP= 75 A (10/1000µs).
Very low capacitance :C<75pF
Low leakage current:<2µA
DESCRIPTION
The SMP75-8 is a very low voltage transient surge arrestor especially designed to protect sensitive telecommunication equipment against lightning strikes and other transients.
MAIN APPLICATION
XDSL TRANSMISSION EQUIPMENT
SMB
(JEDEC DO-214AA)
SCHEMATIC DIAGRAM
SMP75-8
TRISIL
TM
BENEFITS
Protection against high energy surges.
Very low breakover voltage : VBO< 15 V, thus avoiding saturation of transformer.
No signal distortion thanks to very low ca­pacitance.
COMPLIES WITH THE FOLLOWING STANDARDS :
- BELLCORE TR-NWT
-000974: 10/1000 µs1kV 10/1000 µs 75A *
- CCITT K20: 10/700 µs4kV 5/310 µs 100A
- VDE 0433: 10/700 µs4kV 5/310 µs 100A
- VDE 0878: 1.2/50 µs4kV
1/20 µs 100A
* withseriesresistor or PTC.
August 2001 - Ed : 2
1/6
SMP75-8
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Value Unit
I
I
TSM
T
T
Tj
pp
I
stg
Peak pulse current
Non repetitive surge peak on-state current One cycle
Non repetitive surge peak on-state current F = 50Hz
Maximum lead temperature for soldering during 10s Storage temperature range
Maximum junction temperature
10/1000µs
8/20µs
50Hz 60Hz
0.2s 2s
75
250
35 37
14
6
260 °C
-55to+150 150
THERMAL RESISTANCES
Symbol Parameter Value Unit
R R
th(j-I)
th(j-a)
Junction to leads Junction to ambient on printed circuit
20 °C/W
100 °C/W
(with standard footprint dimensions)
Note 1: Pulse waveform
%I
PP
A A
A A
A A
°C °C
10 / 1000 µs tr=10µs tp = 1000 µs 8/20µs tr=8µs tp=20µs 5 / 310 µs tr=5µs tp = 310 µs 1/20µs tr=1µs tp=20µs 2/10µs tr=2µs tp=10µs
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V
RM
I
RM
Stand-off voltage Leakage current at stand-off volt-
age
V
R
V
BR
V
BO
I
H
I
BO
I
PP
Continuous Reverse voltage Breakdown voltage
Breakover voltage
Holding current Breakover current Peak pulse current
amb
= 25°C)
100
50
0
t
r
t
p
2/6
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