ST SMP75-8 User Manual

SMP75

®

SMP75-8

 

 

 

TRISILTM

FEATURES

Bidirectional surge arrestor.

Very low stand-off voltage : VRM = 8 V.

High repetitive surge capability :

IPP = 75 A (10/1000μs).

Very low capacitance : C < 75 pF

Low leakage current : < 2 μA

DESCRIPTION

The SMP75-8 is a very low voltage transient surge arrestor especially designed to protect sensitive telecommunication equipment against lightning strikes and other transients.

MAIN APPLICATION

XDSL TRANSMISSION EQUIPMENT

BENEFITS

Protection against high energy surges.

Very low breakover voltage : VBO < 15 V, thus

avoiding saturation of transformer.

No signal distortion thanks to very low capacitance.

SMB

(JEDEC DO-214AA)

SCHEMATIC DIAGRAM

COMPLIES WITH THE FOLLOWING STANDARDS :

- BELLCORE TR-NWT

 

μs

 

-000974:

10/1000

1 kV

 

10/1000

μs

75A *

- CCITT K20:

10/700 μs

4 kV

 

5/310

μs

100A

- VDE 0433:

10/700 μs

4 kV

 

5/310

μs

100A

- VDE 0878:

1.2/50 μs

4 kV

 

1/20

μs

100A

* with series resistor or PTC.

August 2001 - Ed : 2

1/6

ST SMP75-8 User Manual

SMP75-8

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol

Parameter

 

Value

Unit

 

 

 

 

 

 

Ipp

Peak pulse current

 

10/1000μs

75

A

 

 

 

8/20μs

250

A

ITSM

Non repetitive surge peak on-state current

 

50Hz

35

A

 

One cycle

 

60Hz

37

A

 

Non repetitive surge peak on-state current

 

0.2s

14

A

 

F = 50Hz

 

2s

6

A

TI

Maximum lead temperature for soldering during 10s

 

260

°C

Tstg

Storage temperature range

 

 

- 55 to + 150

°C

Tj

Maximum junction temperature

 

 

150

°C

 

 

 

 

 

 

THERMAL RESISTANCES

 

 

 

 

 

 

 

 

Symbol

Parameter

 

Value

Unit

 

 

 

 

 

Rth(j-I)

Junction to leads

 

20

°C/W

Rth(j-a)

Junction to ambient on printed circuit

 

100

°C/W

 

(with standard footprint dimensions)

 

 

 

Note 1: Pulse waveform

10

/ 1000 μs

tr = 10 μs

8

/

20 μs

tr = 8 μs

5

/

310 μs

tr = 5 μs

1

/

20 μs

tr = 1 μs

2

/

10 μs

tr = 2 μs

tp = 1000 μs tp = 20 μs tp = 310 μs tp = 20 μs tp = 10 μs

% IPP

 

100

 

50

 

0

tp

tr

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol

Parameter

 

 

VRM

Stand-off voltage

IRM

Leakage current at stand-off volt-

 

age

VR

Continuous Reverse voltage

VBR

Breakdown voltage

VBO

Breakover voltage

IH

Holding current

IBO

Breakover current

IPP

Peak pulse current

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