Datasheet SMP75-8 Datasheet (SGS Thomson Microelectronics)



SMP75-8

FEATURES

Bidirectionalsurgearrestor.
Verylow stand-offvoltage : V
Highrepetitive surgecapability:

I

= 75A (10/1000µs).

PP

Verylow capacitance: C < 75pF
Low leakagecurrent :< 2 µA

DESCRIPTION

TheSMP75-8 isa very lowvoltagetransient surge
arrestor especially designed to protect sensitive
telecommunication equipment against lightning
strikesand othertransients.

MAINAPPLICATION

XDSLTRANSMISSIONEQUIPMENT

RM

=8V.

SMB

(JEDEC DO-214AA)

SCHEMATIC DIAGRAM

TRISIL

TM

BENEFITS

Protectionagainsthigh energysurges.

Very low breakover voltage : V
avoiding saturationof transformer.

No signal distortion thanks to very low ca­pacitance.

COMPLIESWITHTHEFOLLOWINGSTANDAR DS:

- BELLCORETR-NWT

-000974: 10/1000µs1kV
10/1000µs 75A*

- CCITT K20: 10/700µs4kV
5/310µs 100A

- VDE 0433: 10/700µs4kV
5/310µs 100A

- VDE 0878: 1.2/50 µs4kV

1/20 µs 100A

* with series resistor or PTC.

< 15 V, thus

BO

January 1998- Ed : 2

1/6

SMP75-8

ABSOLUTE MAXIMUMRATINGS (T

amb

=

25°C)

Symbol Parameter Value Unit

I

I

TSM

T

T

Tj

pp

stg

Peak pulsecurrent 10/1000µs

8/20µs

Non repetitivesurge peakon-state current
One cycle

Non repetitivesurge peakon-state current
F = 50Hz

Maximumlead temperaturefor solderingduring 10s 260 °C

I

Storagetemperaturerange

50Hz
60Hz

0.2s
2s

- 55 to+ 150

Maximumjunction temperature

75

250

35
37

14

6

150

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

R

th(j-I)

th(j-a)

Junctionto leads 20 °C/W
Junctionto ambient onprinted circuit

100 °C/W

(withstandardfootprint dimensions)

Note 1:

Pulsewaveform

%I

PP

A
A

A
A

A
A

°C
°C

10 /1000µstr=10µs tp = 1000
8/20µstr=8µstp=20µs
5 / 310µstr=5µs tp = 310µs
1/20µstr=1µstp=20µs
2/10µstr=2

µ

stp=10

ELECTRICALCHARACTERISTICS(T

Symbol Parameter

V

RM

I

RM

V

R

V

BR

V

BO

I

H

I

BO

I

PP

Stand-offvoltage
Leakagecurrent atstand-offvoltage
ContinuousReversevoltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peak pulsecurrent

C Capacitance

amb

µ

s

µ

s

=25°C)

100

50

0

t

rp

t

2/6

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STATICPARAMETERS

SMP75-8

Type

I

RM

max.

@V

RM

I

@V

R

max.

note1

V

R

BO

@I

BO

max.

note 2

I

H

typ.

note 3

µAVµAV V mA mA pF

SMP75-8 2 6 50 8 15 800 50 75

Note 1 : IRmeasuredat VRguaranteesVBR>V
Note 2 : Measured at 50Hz,see test circuit 1.In anycase V
Note 3 : See functional holdingcurrent test circuit2.
Note 4 :

VR=1V bias,V

=1V, F=1MHz.

RMS

R

BOmin

≥ V

BR

DYNAMICPARAMETERS

Symbol Test conditions (see note5) Type Max. Unit

Test conditions 1

V

= 100V/µs, di/dt< 10 A/µs, IPP=75A

V

BO

RISE

SMP75-8 20 V

Test conditions 2

V

= 1kV/µs, di/dt< 10 A/µs,IPP=10A

RISE

Note 5 : VBOparameters are givenby a KeyTek’System 2’ generatorwith PN246I module.

Seetest circuits (3) for VBOdynamic parameters.

C

max.

note 4

TESTCIRCUIT 1 FORI

Auto

Transformer

220V/2A

220V

TESTPROCEDURE :

PulseTest duration(tp = 20ms):

- ForBidirectionaldevices= SwitchK isclosed

- ForUnidirectionaldevices = SwitchK isopen.
V

Selection

OUT

- Devicewith V

-V

OUT

- Devicewith V

-V

OUT

andVBOparameters:

BO

V

out

Transformer

220V/800 V

5A

< 200Volt

BO

= 250V

≥ 200Volt

BO

= 480V

,R1=140 Ω.

RMS

RMS,R2

tp

static
relay.

measure

= 240Ω.

= 20ms

K

I

BO

R1

140

R2

240

D.U.T

V

BO

measure



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SMP75-8

FUNCTIONAL HOLDINGCURRENT (IH) TESTCIRCUIT2: GO-NOGO TEST

R

-V

P

V

BAT

=-6

D.U.T .

V

Surge generator

Thisis aGO-NOGOtestwhichallowsto confirmthe holdingcurrent(IH)levelin afunctionaltestcircuit.

TESTPROCEDURE :

- Adjustthe currentlevel at theI

- Firethe D.U.T.with a surgecurrent : I

- TheD.U.T. willcome backto theOFF-statewithin adurationof 50ms max.

valueby short circuitingthe D.U.T.

H

= 10A,10/1000 µs.

pp

TESTCIRCUITS3 FORVBODYNAMICPARAMETERS

100 V / µs,

U

KeyTek ’System 2’ generator with PN246Imodule

1kV/µs,

U

Ipp = 75A

10 µF

Ipp = 10 A

26 µH

60 µF

2 Ω

45 Ω

250Ω

12 Ω

47 Ω

66 Ω

470 Ω

46 µH

83 Ω

0.36nF

46 µH

KeyTek ’System2’ generator with PN246I module

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

TYPICALAPPLICATION: T1 / E1protection

SMP75-8

DA108S1

+Vcc

RX LINE

SMP75-8

TX LINE

+Vcc

SMP75-8

The above schematicshows a T1 /E1 application
circuit. Thistype of line protection may be used in
premises equipment or telephone company
equipment on ports directly connected to metallic
plantlines.

During the lightning surge, the low voltage Trisil

SMP75-8

provides an efficient crowbar protection

ontheprimaryside of thetransformer.
The SMP75-8has a maximumpeak pulse current

of 75A (10/1000µs pulse) and a maximum
breakover voltage of 15V. This low voltage
prevents the transformer to be satured when a
surge occurs on the line. Additionally, the low
capacitance(65pF) is required to avoid significant
signaldegradation inthecase of highspeeddigital
pulses.

To protectthe IC lineinterface from the remaining
energy which is coupled through the transformer,

RTIP

+Vcc

RRING

IC

TTIP

+Vcc

TRING

SM6T6V8A

additional voltage protection is recommended on
the line input / output pins of the IC. The diode
array DA108S1 connected between +Vcc and
GND is then used to limit the remaining
overvoltagewithin a safelevel.

The DA108S1 is especially dedicated to this
application because. Its fast response time and
low forward voltage drop enable it to clamp any
surge before the IC line interface internal
protection fails. Additionally, the low capacitance
(30pF)is requiredto prevent signaldegradation of
thehigh speeddatd.

The DA108S1 is a fully integrated (1 chip) device
and results from the ST ASD
Specific Discretes) technology. ASDs

TM

(Application

TM

combine
the functions of several components into a single
monolithicdevice thatis tailoredto meet the exact
requirement of a specific application, allowing
higherdensity andimproved reliability.

5V

0V

ORDERCODE

SURFACEMOUNT

TRISIL75 A

SMP 75 - 8

VOLTAGE

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SMP75-8

Non repetitivesurge peak current versusoverload
duration.

TSM (A)

I

50
45
40
35
30
25
20
15
10

5
0

1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t(s)

F=50Hz
Tj initial=25°C

PACKAGEMECHANICALDATA

SMB(JEDEC DO-214AA)(Plastic)

E1

D

E

A1

c

L

A2

b

MARKING

Package Type Marking

SMB SMP75-8 L08

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A1 1.90 2.15 2.45 0.075 0.085 0.096
A2 0.05 0.15 0.20 0.002 0.006 0.008

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.40 5.60 0.201 0.213 0.220

E1 4.05 4.30 4.60 0.159 0.169 0.181

D 3.30 3.60 3.95 0.130 0.142 0.156

L 0.75 1.15 1.60 0.030 0.045 0.063

FOOTPRINT

(in millimeters)

Packaging: tapeand reel
Weight: 0.12g

2.3

1.52 2.75

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor forany infringement of patents or other rights of third partieswhich may result from its use. No
license is grantedby implication or otherwise underany patent or patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in this publicationare subjectto changewithout notice. This publicationsupersedes and replaces all informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedfor use as criticalcomponentsin life support devices or systemswithout express
writtenapproval of SGS-THOMSON Microelectronics.

 1998 SGS-THOMSON Microelectronics - Printed in Italy -All rights reserved.

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