Datasheet SMP50-100, SMP50-120, SMP50-130, SMP50-180, SMP50-200 Datasheet (SGS Thomson Microelectronics)
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®
TELECOM EQUIPMENT PROTECTION: TRISIL™
FEATURES
Bidirectional crowbar protection
■
Voltage range from 62V to 270V
■
Low capacitance from 15pF to 30pF typ.@ 50V
■
Low leakage current: IR= 2µA max.
■
Holding current: IH= 150 mA min.
■
Repetitive peak pulse current:
■
= 50 A (10/1000 µs)
I
PP
MAIN APPLICATIONS
Telecommunication equipment such as
Analog and digital line cards (xDSL, T1/E1,
■
ISDN...).
Terminals (phone, fax, modem...) and central
■
office equipment.
SMP50-xxx
SMA
(JEDEC DO-214AC)
SCHEMATIC DIAGRAM
DESCRIPTION
The SMP50-xxx series has been designed to
protect telecommunication equipment against
lightningandtransientinduced byACpower lines.
The package/ die sizeratio has been optimizedby
using the SMA package.
BENEFITS
Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. Trisils
are used to help equipment to meet various standards such as UL1950, IEC950 / CSA C22.2, UL1459
and FCC part 68. Trisils have UL94 V0resinapproved.SMA package is JEDEC registred. (Trisils are UL
497B approved - file: E136224).
November 2002- Ed: 3B
1/8
SMP50-xxx
IN COMPLIANCES WITH THE FOLLOWING STANDARDS
Standard
GR-1089 Core
First level
GR-1089 Core
Second level
GR-1089 Core
Intra-building
ITU-T-K20 / K21
ITU-T-K20
(IEC61000-4-2)
VDE0433
VDE0878
IEC61000-4-5
FCC Part 68, lightning
surge type A
FCC Part 68, lightning
surge type B
Peak Surge
Voltage
(V)
2500
1000
Voltage
Waveform
(µs)
2/10
10/1000
Required peak
current (A)
500
100
Current
Waveform
(µs)
2/10
10/1000
5000 2/10 500 2/10 24
1500 2/10 100 2/10 0
6000
1500
6000
8000
4000
2000
4000
2000
4000
4000
1500
800
10/700
1/60 ns
10/700
1.2/50
10/700
1.2/50
10/160
10/560
150
37.5
5/310
ESD contact discharge
ESD air discharge
100
50
100
50
100
100
200
100
5/310
1/20
5/310
8/20
10/160
10/560
1000 9/720 25 5/320 0
Minimum
serial resistor
to meet
standard (Ω)
12
10
53
0
0
0
21.5
0
0
0
21.5
0
12.5
6.5
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
(j-a)
th
(j-l)
R
th
Junction to ambient with recommended footprint
Junction to leads
120 °C/W
30 °C/W
ELECTRICAL CHARACTERISTICS
= 25°C)
(T
amb
Symbol Parameter
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
C
Stand-off voltage
Leakage current at V
RM
Continuous reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
2/8
SMP50-xxx
ABSOLUTE RATINGS (T
amb
= 25°C)
Symbol Parameter Value Unit
Repetitive peak pulse current:
I
I
I
TSM
I²t
T
T
T
PP
FS
stg
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
Fail safe mode: maximum current (note 1)
Non repetitive surge peak on-state current
(Sinusoidal)
8/20 µs 2.5 kA
t = 20ms
t = 16.6ms
t = 0.2s
t=2s
I²t value for fusing
t = 16.6ms
t = 20ms
L
Maximum lead temperature for soldering during 10 s.
Storage temperature range
j
Maximum junction temperature
50
100
55
65
75
100
150
25
28
16
8.5
6.5
6.3
260 °C
-55to+150
150
A
A
A²s
°C
°C
Repetitive peak pulse current
tr: rise time (µs)
tp: pulse duration time (µs)
ex: Pulse waveform 10/1000µs
tr = 10µs tp = 1000µs
100
%I
PP
50
0
t
t
p
r
t
3/8
SMP50-xxx
ELECTRICAL PARAMETERS (Tamb = 25°C)
I
Type
@V
RM
RM
max
µA V µA V V mA V mA mA pF pF
I
R
@V
Note 1
R MAX
DYNAMIC
@I
V
BO
max
Note 2
BO
STATIC
V
BO
max
Note 3
@I
BO
I
H
min
Note 4
C
typ.
Note 5
C
typ.
Note 6
SMP50-62
56
62 85
82
150 30 50
SMP50-68 61 68 93 90 150 30 45
SMP50-100 90 100 135 133 150 20 40
SMP50-120 108 120 160 160 150 20 40
SMP50-130 117 130 173 173 150 20 35
2
50
800
800
SMP50-180 162 180 235 240 150 15 30
SMP50-200 180 200 262 267 150 15 30
SMP50-220 198 220 285 293 150 15 30
SMP50-240 216 240 300 320 150 15 30
SMP50-270 243 270 350 360 150 15 30
Note 1: IRmeasured at VRguarantee V
Note 2: See functional breakover voltage test circuit 1.
Note 3: See test circuit 2.
Note 4: See functional holding current test circuit 3.
Note 5: VR= 50V bias,VRMS = 1V, F =1MHz.
Note 6: VR= 2V bias, VRMS = 1V, F= 1MHz
BRmin
≥ V
R
Fig. 1: Non repetitive surge peak on-state current
versus overload duration (Tj initial = 25°C)
ITSM(A)
40
30
20
10
0
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
4/8
t(s)
F=50Hz
Fig. 2: On-state voltage versus on-state current
(typical values).
IT(A)
50
20
10
5
2
1
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VT(V)
Tj=25°C
SMP50-xxx
Fig. 3: Relative variation of holding currentversus
junction temperature.
IH[Tj] / IH[Tj=25°C]
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0 20 40 60 80 100 120
Tj(°C)
Fig. 5: Relative variationof leakagecurrent versus
junction temperature (typical values).
IRM[Tj] / IRM[Tj=25°C]
2000
1000
VR=VRM
Fig. 4: Relativevariation of breakover voltageversus junction temperature.
VBO[Tj] / VBO[Tj=25°C]
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
-40 -20 0 20 40 60 80 100 120
Tj(°C)
Fig. 6: Relative variation of thermal impedance
versus pulse duration.
Zth(j-a)(°C/W)
200
100
Zth(j-a)
100
10
1
25 50 75 100 125
Tj(°C)
Fig. 7: Relative variation of junction capacitance
versus reverse voltage applied (typical values).
C [VR] / C [VR=50V]
2.5
2.0
1.5
1.0
0.5
VR(V)
0.0
1 2 5 10 20 50 100 300
Tj=25°C
F=1MHz
VRMS=1V
10
tp (s)
1
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
5/8
SMP50-xxx
TEST CIRCUIT 1 FOR DYNAMIC IBOand VBOPARAMETERS
100 V / µs, di/dt < 10 A / µs, Ipp = 50A
2 Ω
U
KeyTek ‘System 2’generator with PN246I module
10 µF
45 Ω
1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A
26 µH
U
KeyTek ‘System 2’generator with PN246I module
60 µF
250 Ω
12 Ω
TEST CIRCUIT 2 for IBOAND VBOPARAMETERS.
ton = 20ms
220V 50Hz
Vout
83 Ω
66 Ω
470 Ω
47 Ω
K
46 µH
R1 = 140Ω
R2 = 240Ω
0.36 nF
DUT
46 µH
VBO
measurement
TEST PROCEDURE :
■
Pulse test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
■
V
Selection
OUT
- Device with V
- Device with V
6/8
-V
-V
BO
OUT
BO
OUT
< 200 Volt
= 250 V
≥ 200 Volt
= 480 V
1/4
RMS,R1
RMS,R2
= 140 Ω.
= 240 Ω.
IBO
measurement
TEST CIRCUIT 3 for IHPARAMETERS.
SMP50-xxx
V
BAT
= - 48 V
R
D.U.T
Surge generator
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the I
- Fire the D.U.T. with a surge current : I
value by short circuiting the D.U.T.
H
= 10A, 10/1000 µs.
pp
- The D.U.T. will come back to the off-state within 50 ms max.
PACKAGE MECHANICAL DATA
SMA (JEDEC DO-214AC)
E1
REF.
Millimeters Inches
DIMENSIONS
Min. Max. Min. Max.
D
A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008
b 1.25 1.65 0.049 0.065
E
A1
C
L
A2
b
c 0.15 0.41 0.006 0.016
E 4.80 5.60 0.189 0.220
E1 3.95 4.60 0.156 0.181
D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063
FOOT PRINT in millimeters (in inches)
1.45 1.45
2.40
(0.057) (0.094) (0.057)
1.65
(0.065)
7/8
SMP50-xxx
ORDER CODE
SMP 50 - xx
Trisil Surface Mount
I = 50A
PP
Voltage
ORDERING INFORMATION
Part number Marking Package Weight Base qty Delivery mode
SMP50-62 V06
SMP50-68 V07
SMP50-100 V10
SMP50-120 V12
SMP50-130 V13
SMA 0.068 g 5000 Tape & reel
SMP50-180 V18
SMP50-200 V20
SMP50-220 V22
SMP50-240 V24
SMP50-270 V27
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes andreplaces all information previously supplied.
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© 2002 STMicroelectronics - Printed inItaly - All rights reserved.
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