ST 74AUP1G04 User Manual

Features

74AUP1G04

Low power single inverter gate

■ High speed: t

■ Power down protection on inputs and outputs

■ Balanced propagation delays:

t

≈ t

PLH

■

Operating voltage range: V

CC

■ Low power dissipation:

I

CC

■ Latch-up performance exceeds 300 mA (JESD

PHL

(opr) = 1.2 to 3.6 V

= 1 µA (max.) at TA = 85 °C

= 4.3 ns (max.) at VCC = 2.3 V

PD

78, Class II)

■ ESD performance:

– 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

Applications

■ Mobile phones

■ Personal digital assistants (PDAs)

DFN6L

SOT-665

Description

The 74AUP1G0 4 is a low voltage CMOS single inverter gate fabricated with sub-micron silicon gate and double-layer metal wiring C technology. It is ideal for 1.2 to 3.6 V operations and low power and low noise applications.

2

MOS

All inputs and outputs are equipped with protection circuits against static discharg e, giving them 2kV ESD immunity and transient excess voltage.

Table 1. Device summary

Order code Package Packing

74AUPG04DTR DFN6L (1.2 x 1 mm) Tape and reel 74AUPG04GTR SOT-665 (1.6 x 1.6 mm) Tape and reel

March 2008 Rev 1 1/18

www.st.com

18

Pin settings 74AUP1G04

1 Pin settings

1.1 Pin connection

Figure 1. Pin connection (top through view)

1

NC

2

GND

3

DFN6L

1.2 Pin description

Table 2. Pin assignment

DFN pin

number

1 1 NC Not connected 2 2 A Data input 3 3 GND Ground (0V) 4 4 B Data output 5 - NC Not connected 65V

SOT pin number

6

5

4

VCC

B

GND

NC

1

2

3

SOT-665

Symbol Name and function

CC

Positive supply voltage

5

4

VCC

B

CS00092

2/18

74AUP1G04 Pin settings

1.3 Truth table

Figure 2. Truth table

A

Table 3. Truth table

AB

LH

HL

Figure 3. Input and output equivalent circuit

V

CC

B

Input

ESD

protection

GND GND GND

Overvoltage

control

ESD

protection

GND

Output

GND

CS08974

3/18

Maximum rating 74AUP1G04

2 Maximum rating

Stressing the device above the rating listed in the “absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may aff ect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

Table 4. Absolute maximum ratings

Symbol Parameter Value Unit

V

V V V

I I

OK

I I

CC

I

GND

P

T

CC

IK

O

stg

Supply voltage -0.5 to +4.6 V DC input voltage -0.5 to +4.6 V

I

DC output voltage (VCC = 0 V) -0.5 to +4.6 V

O

DC output voltage (high or low state) -0.5 to VCC + 0.5 V

O

DC input diode current -20 mA DC output diode current -50 mA DC output current ±50 mA DC supply current per supply pin ±100 mA DC ground current per supply pin ±100 mA Power dissipation 200 mW

D

Storage temperature -65 to +150 °C Lead temperature (10 sec) 260 °C

L

2.1 Recommended operating conditions

Table 5. Recommended operating conditions

Symbol Parameter Value Unit

V

CC

V

T

op

dt/dv Input rise and fall time

Supply voltage 1.2 to 3.6 V Input voltage 0 to V

I

Output voltage 0 to V

O

Operating temperature -40 to 85 °C

V

= 3.0 to 3.6 V 10 ns/V

CC

= 2.3 to 2.7 V 20 ns/V

V

CC

= 1.2 to 1.95 V 100 ns/V

V

CC

CC CC

V V

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74AUP1G04 Electrical characteristics

3 Electrical characteristics

Table 6. DC specifications

Symbol Parameter

1.2 to 1.95 0.65 V

IH

High level input voltage

V

2.75 to 3.6 2.0 2.0

1.2 to 1.95 0.35 V

IL

Low level input voltage

V

2.75 to 3.6 0.8 0.8

1.2 to 3.6 I

V

OH

High level output voltage

1.2 to 3.6 I

I

Low level output voltage

Input leakage current

0 to 3.6 V

V

OL

I

V

CC

(V)

3.0 I

2.3 I

1.65 I

1.4 I

1.2 I

3.0 I

2.3 I

1.65 I

1.4 I

1.2 I

Value Value

Test condition

Min Max Min Max

CC

0.65 V

V

CC –

0.2

CC

0.35V

CC

V

= -100 µA

OH

= -10 mA 2.45 2.4

OH

= -6 mA 1.85 1.8

OH

= -4 mA 1.30 1.25

OH

= -2 mA 1.10 1.05

OH

= -1 mA 1.00 0.95

OH

= 100 µA 0.15 0.20

O

= 10 mA 0.50 0.55

O

= 6 mA 0.35 0.40

O

= 4 mA 0.35 0.40

O

= 2 mA 0.25 0.30

O

= 1 mA 0.20 0.25

O

= GND to 3.6 ±0.1 ±0.5 µA

I

CC –

0.2

Unit25 °C -40 to 85 °C

V2.0 to 2.7 1.6 1.6

V2.0 to 2.7 0.7 0.7

V

ΔI

CC

Power off leakage current

Quiescent supply current

ICC increment per input

0

1.2 to 3.6 V

3.3

I

off

I

CC

VI or VO = 0 to

3.6 V

= VCC or GND 0.1 1 µA

I

VI = VCC - 0.6V, IO = 0

±0.1 ±1.0 µA

80 100 µA

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Electrical characteristics 74AUP1G04

Table 7. AC electric al characteristics

Symbol Parameter

V

CC

(V)

1.1 to 1.3

1.4 to 1.6 4.2 6.6

1.65 to 1.95 3.2 5.1

2.3 to 2.7 2.3 3.1

3.0 to 3.6 1.9 2.5

1.1 to 1.3

1.4 to 1.6 4.6 7

1.65 to 1.95 3.5 5.3

2.3 to 2.7 2.4 3.5

t

PLH, tPHL

Propagation delay time

3.0 to 3.6 2.0 2.9

1.1 to 1.3

1.4 to 1.6 5.6 7.5

1.65 to 1.95 3.8 5.7

Test

condition

C

(pF)

L

5

10

15

Value

25 °C -40 to 85 °C

Typ Min Max

8.0 12.4

8.6 13

9.1 13.3

Unit

ns

2.3 to 2.7 2.6 3.7

3.0 to 3.6 2.2 3.1

1.1 to 1.3

1.4 to 1.6 5.5 9

1.65 to 1.95 4.3 6.7

2.3 to 2.7 3.1 4.3

3.0 to 3.6 2.7 3.8

Table 8. Capacitive characteristics

Symbol Parameter

C

Input capacitance

I

Output capacitance 3.6 VI = 0 or V

C

O

C

Power dissipation capacitance 3.6 f = 10 MHz 32 pF

PD

V

CC

(V)

0V

3.6 V

condition

= 0 or V

I

= 0 or V

I

30

Test

10.5 16

Value = 25 °C

A

Min Typ Max

CC CC CC

UnitT

3

pF

6 6pF

6/18