2ST3360
Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A
Features
Polarity |
BVCEO |
IC (max) |
hFE(1) |
NPN |
60 V |
0.8 A |
160 |
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PNP |
-60 V |
- 0.8 A |
160 |
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1. @ Ic = 1 A and VCE = 2 V.
■Very low collector-emitter saturation voltage
■High current gain characteristic
■Fast-switching speed: FT= 130 MHz
■Hermetic package
■Manufactured according to ESCC 5000 specifications
■100 krad low dose rate
Applications
■ Power MOSFET drivers
Description
The 2ST3360 power bipolar transistor is a fast dual complementary device (NPN and PNP) housed in a single LCC-6 hermetic Hi-Rel package, specifically designed for aerospace HiRel applications. Its radiation hardness allows key parameters such as gain and leakage current to stay at best-in-class post irradiation levels. ST proprietary technology also results in a high degree of electrical performance for both transistors in the pair. The high switching performance of each make this device particularly suitable for power MOSFET driver applications.
Datasheet — production data
LCC-6
3 |
4 |
2 |
5 |
1 |
6 |
Table 1. |
Device summary(1) |
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Order code |
ESCC part |
Quality level |
Radiation |
Package |
Lead |
Mass |
EPPL |
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level |
finish |
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2ST3360U1 |
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Engineering |
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LCC-6 |
Gold |
0.20 g |
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model |
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1. Contact ST sales office for information about the specific conditions for tape and reel packing. |
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May 2012 |
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Doc ID 022014 Rev 3 |
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1/11 |
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This is information on a product in full production. |
www.st.com |
Contents |
2ST3360 |
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Contents
1 |
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. 3 |
2 |
Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. 4 |
3 |
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
5 |
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3.1 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
6 |
4 |
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
7 |
5 |
Order code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
9 |
6 |
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
10 |
2/11 |
Doc ID 022014 Rev 3 |
2ST3360 |
Absolute maximum ratings |
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Table 2. |
Absolute maximum ratings |
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Symbol |
Parameter |
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Value |
Unit |
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NPN |
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PNP |
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VCBO |
Collector-base voltage |
(IE = 0) |
60 |
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-60 |
V |
VCEO |
Collector-emitter voltage (IB = 0) |
60 |
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-60 |
V |
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VEBO |
Emitter-base voltage |
(IC = 0) |
6 |
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-6 |
V |
IC |
Collector current |
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0.8 |
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-0.8 |
A |
ICM |
Collector peak current (tP < 5 ms) |
4 |
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-4 |
A |
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IB |
Base current |
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0.2 |
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-0.2 |
A |
IBM |
Base peak current (tP < 5 ms) |
0.4 |
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-0.4 |
A |
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PTOT |
Total dissipation at Tamb = 25 °C |
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1.4 |
W |
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Tstg |
Storage temperature |
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-65 to 200 |
°C |
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TJ |
Max. operating junction temperature |
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200 |
°C |
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Table 3. |
Thermal data |
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Symbol |
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Parameter |
Value |
Unit |
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RthJA |
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Thermal resistance junction-ambient max |
125 |
°C/W |
Note: |
Mounted on a 15 x 15 x 0.6 mm ceramic substrate. |
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Doc ID 022014 Rev 3 |
3/11 |
Pin configuration |
2ST3360 |
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-ETALLIZED CORNER
.0. %MITTER |
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0.00%MITTER |
.0..#OLLECTROR |
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0.00#OLLECTOR |
.0.."ASE |
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0.00"ASE |
!-V
"OTTOM VIEW PAD SIDE
4/11 |
Doc ID 022014 Rev 3 |