ST 2ST3360 User Manual

2ST3360

Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A

Features

Polarity	BVCEO	IC (max)	hFE(1)
NPN	60 V	0.8 A	160
PNP	-60 V	- 0.8 A	160

1. @ Ic = 1 A and VCE = 2 V.

■Very low collector-emitter saturation voltage

■High current gain characteristic

■Fast-switching speed: FT= 130 MHz

■Hermetic package

■Manufactured according to ESCC 5000 specifications

■100 krad low dose rate

Applications

■ Power MOSFET drivers

Description

The 2ST3360 power bipolar transistor is a fast dual complementary device (NPN and PNP) housed in a single LCC-6 hermetic Hi-Rel package, specifically designed for aerospace HiRel applications. Its radiation hardness allows key parameters such as gain and leakage current to stay at best-in-class post irradiation levels. ST proprietary technology also results in a high degree of electrical performance for both transistors in the pair. The high switching performance of each make this device particularly suitable for power MOSFET driver applications.

Datasheet — production data

LCC-6

Figure 1. Internal schematic diagram

3	4
2	5
1	6

	Table 1.	Device summary(1)
	Order code		ESCC part	Quality level	Radiation	Package	Lead	Mass	EPPL
			number		level		finish
	2ST3360U1		-	Engineering	-	LCC-6	Gold	0.20 g	-
				model
	1. Contact ST sales office for information about the specific conditions for tape and reel packing.
	May 2012			Doc ID 022014 Rev 3					1/11

This is information on a product in full production.

www.st.com

Contents	2ST3360

Contents

1	Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. 3
2	Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. 4
3	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	5
	3.1 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
4	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
5	Order code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	9
6	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	10

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2ST3360	Absolute maximum ratings

1 Absolute maximum ratings

Table 2.	Absolute maximum ratings
Symbol	Parameter			Value		Unit
			NPN		PNP
VCBO	Collector-base voltage	(IE = 0)	60		-60	V
VCEO	Collector-emitter voltage (IB = 0)		60		-60	V
VEBO	Emitter-base voltage	(IC = 0)	6		-6	V
IC	Collector current		0.8		-0.8	A
ICM	Collector peak current (tP < 5 ms)		4		-4	A
IB	Base current		0.2		-0.2	A
IBM	Base peak current (tP < 5 ms)		0.4		-0.4	A
PTOT	Total dissipation at Tamb = 25 °C			1.4		W
Tstg	Storage temperature		-65 to 200			°C
TJ	Max. operating junction temperature			200		°C

	Table 3.	Thermal data
	Symbol		Parameter	Value	Unit
	RthJA		Thermal resistance junction-ambient max	125	°C/W
Note:	Mounted on a 15 x 15 x 0.6 mm ceramic substrate.

Doc ID 022014 Rev 3

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Pin configuration	2ST3360

2 Pin configuration

Figure 2. Pin connections

-ETALLIZED CORNER

.0. %MITTER			0.00%MITTER
.0..#OLLECTROR			0.00#OLLECTOR
.0.."ASE			0.00"ASE

!-V

"OTTOM VIEW PAD SIDE

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