ST 2ST3360 User Manual
Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A
3
2
1
4
5
6
LCC-6
Features
Polarity BV
NPN 60 V 0.8 A 160
PNP -60 V - 0.8 A 160
1. @ Ic = 1 A and VCE = 2 V.
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed: FT= 130 MHz
■ Hermetic package
■ Manufactured according to ESCC 5000
CEO
IC (max) h
specifications
■ 100 krad low dose rate
FE
(1)
2ST3360
Datasheet — production data
Figure 1. Internal schematic diagram
Applications
■ Power MOSFET drivers
Description
The 2ST3360 power bipolar transistor is a fast
dual complementary device (NPN and PNP)
housed in a single LCC-6 hermetic Hi-Rel
package, specifically designed for aerospace HiRel applications. Its radiation hardness allows key
parameters such as gain and leakage current to
stay at best-in-class post irradiation levels. ST
proprietary technology also results in a high
degree of electrical performance for both
transistors in the pair. The high switching
performance of each make this device particularly
suitable for power MOSFET driver applications.
number
(1)
Quality level
Engineering
model
Table 1. Device summary
Order code
2ST3360U1 -
ESCC part
Radiation
level
- LCC-6 Gold 0.20 g -
Package
Lead
finish
Mass EPPL
1. Contact ST sales office for information about the specific conditions for tape and reel packing.
May 2012 Doc ID 022014 Rev 3 1/11
This is information on a product in full production.
www.st.com
11
Contents 2ST3360
Contents
1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Order code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11 Doc ID 022014 Rev 3
2ST3360 Absolute maximum ratings
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Val ue
Symbol Parameter
NPN PNP
Unit
V
V
V
P
CBO
CEO
EBO
I
I
CM
I
I
BM
TOT
T
stg
T
Collector-base voltage (IE = 0) 60 -60 V
Collector-emitter voltage (IB = 0) 60 -60 V
Emitter-base voltage (IC = 0) 6 -6 V
Collector current 0.8 -0.8 A
C
Collector peak current (tP < 5 ms) 4 -4 A
Base current 0.2 -0.2 A
B
Base peak current (tP < 5 ms) 0.4 -0.4 A
Total dissipation at T
= 25 °C 1.4 W
amb
Storage temperature -65 to 200 °C
Max. operating junction temperature 200 °C
J
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJA
Thermal resistance junction-ambient max 125 °C/W
Note: Mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Doc ID 022014 Rev 3 3/11
Pin configuration 2ST3360
.0.%MITTER
.0.#OLLECTROR
.0."ASE
0.0"ASE
0.0#OLLECTOR
0.0%MITTER
-ETALLIZED CORNER
"OTTOM VIEW PADSIDE
!-V
2 Pin configuration
Figure 2. Pin connections
4/11 Doc ID 022014 Rev 3
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