Datasheet 2SK359 Datasheet (HIT)

Application

VHF amplifier

Outline

TO-92 (2)

2SK359

Silicon N-Channel MOS FET

1. Gate

2. Source

3. Drain

3

2

1

2SK359

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

1

Drain to source voltage V
Gate to source voltage V
Drain current I
Gate current I

*

DSX

GSS

D

G

Channel power dissipation Pch 400 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. VGS = –4 V

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSX

voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V
Forward transfer admittance

GSS

DSS

GS(off)

y

fs

Input capacitance Ciss — 2.5 — pF VDS = 10 V, VGS = 0,

Output capacitance Coss — 1.6 — pF
Reverse transfer capacitance Crss — 0.03 — pF
Power gain PG — 30 — dB VDS = 10 V, VGS = 0,

Noise figure NF — 2 — dB
Note: 1. The 2SK359 is grouped by I

DEF

4 to 8 6 to 10 8 to 12

20 — — V ID = 100 µA, VGS = –4 V

——±20 nA VGS = ±5 V, VDS = 0

1

*

4 — 12 mA V
0 — –2.0 V VDS = 10 V, ID = 10 µA
8 14 — mS V

as follows.

DSS

20 V
±5V
30 mA
±1mA

= 10 V, VGS = 0

DS

= 10 V, VGS = 0,

DS

f = 1 kHz

f = 1 MHz

f = 100 MHz

2

2SK359

Maximum Channel Dissipation Curve

600

(mW)

ch

400

200

Channel Power Dissipation P

0

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

10.0
VDS = 10 V

8.0

(mA)

D

6.0

Typical Output Characteristics

10

= 0 V

V

GS

8

(mA)

D

6

–0.1

–0.2
–0.3

4

Drain Current I

2

–0.4
–0.5

–0.6
–0.7

–0.8

15010050

0

Drain to Source Voltage V

DS

102468

(V)

Forward Transfer Admittance vs.

Drain to Source Voltage

20

 (mS)

fs

16

F

12

E

4.0

Drain Current I

2.0

0
–2.0 –1.6 –1.2 –0.8 –0.4 0

Gate to Source Voltage V

GS

(V)

D

8

4

VGS = 0
f = 1 kHz

Forward Transfer Admittance y

0

Drain to Source Voltage V

610482

(V)

DS

3

2SK359

100

 (mS)

50

fs

20

10

Forward Transfer Admittance y

0.5

(pF)

rss

0.2

0.1

Forward Transfer Admittance vs.

Drain Current

VDS = 10 V
f = 1 kHz

5

2

1

0.5 2 201.0 1050.2
Drain Current I

(mA)

D

Reverse Transfer Capacitance vs.

Drain to Source Voltage

VGS = 0
f = 1 MHz

Input Capacitance vs.

Drain to Source Voltage

20

10

(pF)

iss

5

2

1.0

Input Capacitance C

0.5
Drain to Source Voltage V

Output Capacitance vs.

Drain to Source Voltage

20

10

(pF)

oss

5

VGS = 0
f = 1 MHz

2102051.00.5
(V)

DS

VGS = 0
f = 1 MHz

0.05

0.02

Reverse Transfer Capacitance C

0.01

0.5 2 10 2051.0
Drain to Source Voltage V

DS

(V)

2

1.0

Output Capacitance C

0.5

0.5 2 2051.0 10
Drain to Source Voltage V

DS

(V)

4

35

30

2SK359

Power Gain, Noise Figure vs.

Drain to Source Voltage

PG

25

20

15

Power Gain PG (dB)

10

5

20

Drain to Source Voltage V

f = 100 MHz

6

4

NF

6104812

(V)

DS

Noise Figure NF (dB)

2

0

5

Unit: mm

0.60 Max

0.45 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-92 (2)
Conforms
Conforms

0.25 g

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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