Datasheet 2SK522 Datasheet (HIT)

Silicon N-Channel Junction FET

Application

VHF amplifier, Mixer, local oscillator

Outline

SPAK

2SK522

1

2

3

1. Gate

2. Source

3. Drain

2SK522

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Gate to drain voltage V
Gate current I
Drain current I

GDO

G

D

Channel power dissipation Pch 200 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Gate to drain breakdown

V

(BR)GDO

voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V
Forward transfer admittance

GSS

DSS

GS(off)

y

fs

Input capacitance Ciss — 6.8 — pF VDS = 5 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss — 0.1 — pF
Power gain PG 20 27 — dB VDS = 5 V, VGS = 0,

Noise figure NF — 1.7 2.5 dB
Note: 1. The 2SK522 is grouped by I

Drain D E F

I

DSS

4 to 8 6 to 10 10 to 20

–30 — — V IG = –100 µA, IS = 0

— — –10 nA VGS = –0.5 V, VDS = 0

1

*

4 — 20 mA V
——–3V VDS = 5 V, ID = 10 µA
8 10 — mS V

as follows.

DSS

–30 V
10 mA
20 mA

= 5 V, VGS = 0

DS

= 5 V, VGS = 0, f = 1 kHz

DS

f = 100 MHz

2

2SK522

Maximum Channel Power

Dissipation Curve

300

200

100

Channel Power Dissipation Pch (mW)

0 50 100 150

Ambient Temperature Ta (°C)

Typical Output Characteristics (2)

10

VGS = 0

8

(mA)

D

6

–0.2 V

–0.4

4

–0.6

Drain Current I

2

–0.8
–1.0

Typical Output Characteristics (1)

10

= 0

V

8

(mA)

D

6

GS

–0.2 V

P

ch

= 200 mW

–0.4

4

–0.6

Drain Current I

2

–0.8
–1.0

0 1020304050

Drain to Source Voltage V

DS

(V)

Typical Transfer Characteristics

15

VDS = 5 V

10

(mA)

D

F

E

5

Drain Current I

D

0 12345

Drain to Source Voltage V

DS

(V)

0
–3.0 –2.0 –1.0 0

Gate to Source Voltage V

GS

(V)

3

2SK522

Forward Transfer Admittance vs.

Drain to Source Voltage

15

Ta = –25°C

25°C

10

75°C

5

V

= 0

GS

f = 1 kHz

Forward Transfer Admittance yfs (mS)

0 5 10 15

Drain to Source Voltage V

DS

(V)

Input Capacitance vs.

Drain to Source Voltage

20

V

= 0

GS

10

f = 1 MHz

Forward Transfer Admittance vs.

Drain Current

50

20

10

5

2

V

DS

f = 1 kHz

1.0

0.5

Forward Transfer Admittance yfs (mS)

0.2 0.5 1.0 2 5 10 20
Drain Current I

(mA)

D

Reverse Transfer Capacitance vs.

Drain to Source Voltage

5

2

1.0

= 5 V

5

Input Capacitance Ciss (pF)

2

0.1 0.2

1.0 20.5 5 10

Drain to Source Voltage V

DS

(V)

V

= 0

0.5

GS

f = 1 MHz

0.2

0.1

0.05

Reverse Transfer Capacitance Crss (pF)

0.1 0.2 0.5 1.0 2 5 10
Drain to Source Voltage VDS (V)

4

2SK522

Output Capacitance vs.
Drain to Source Voltage

200

100

V

= 0

GS

50

f = 1 MHz

20

10

5

Output Capacitance Coss (pF)

2

0.1 0.2 0.5 1.0 2 5 10
Drain to Source Voltage V

8

6

(V)

DS

Noise Figure vs.

Drain to Source Voltage

Power Gain vs.

Drain to Source Voltage

30

20

VGS = 0
f = 100 MHz

10

Power Gain PG (dB)

0 5 10 15

Drain to Source Voltage V

VGS = 0
f = 100 MHz

DS

(V)

4

2

Noise Figure NF (dB)

0481216

Drain to Source Voltage V

DS

(V)

5

2SK522

SG Output

Impedance

C1, C2 :

:

L

1

L

:

2

Power Gain and Noise Figure

Test Circuit

Shield

5.4 3.0

50

S.G.

C

1

D.U.T.

4,700

L

L

C

1

2

2

1,000

50

V.V

Unit R : Ω

V

DD

C : pF

0 to 30pF Max Variable Air

3.5 T φ1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.

4.5 T φ1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.

6

4.2 Max

3.2 Max

1.8 Max

2.2 Max

Unit: mm

0.6 Max

0.45 ± 0.1

1.27 1.27

2.54

0.6

14.5 Min

Hitachi Code
JEDEC
EIAJ
Weight

0.4 ± 0.1

(reference value)

SPAK
—
—

0.10 g

Cautions

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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