Page 1
Description
The SGM2016AN is an N-channel dual-gate GaAs
MES FET for UHF-band low-noise amplification. This
FET is suitable for a wide range of applications
including UHF TV tuners, cellular/cordless phone,
and DBS IF amplifiers.
Features
• Ultra-small package
• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode
Application
UHF-band high-frequency amplifier, mixer, and oscillator
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 12 V
• Gate 1 to source voltage VG1S –5 V
• Gate 2 to source voltage VG2S –5 V
• Drain current ID 55 mA
• Allowable power dissipation PD 100 mW
• Channel temperature Tch 125 °C
• Storage temperature Tstg –55 to +150 °C
– 1 –
SGM2016AN
E97939-PS
GaAs N-channel Dual-Gate MES FET
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
M-281
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SGM2016AN
Typical Characteristics (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
IDSX
IG1SS
IG2SS
IDSS
VG1S (OFF)
VG2S (OFF)
gm
Ciss
Crss
NF
Ga
VDS = 12V
VG1S = –4V
VG2S = 0V
VG1S = –4.5V
VG2S = 0V
VDS = 0V
VG2S = –4.5V
VG1S = 0V
VDS = 0V
VDS = 5V
VG1S = 0V
VG2S = 0V
VDS = 5V
ID = 100µA
VG2S = 0V
VDS = 5V
ID = 100µA
VG1S = 0V
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1kHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 900MHz
10
20
17
30
0.9
25
1.2
21
50
–8
–8
35
–2.5
–2.5
2.0
40
2.0
µA
µA
µA
mA
V
V
ms
pF
fF
dB
dB
Symbol Conditions Min. Typ. Max. Unit
40
(VG2S = 1.5V)
30
20
– Drain current [mA]
D
I
10
0
0 2 4 6
1 3 5 –2.0 –1.5 –1.0 –0.5 0
V
DS – Drain to source voltage [V]
ID vs. VDS
VG1S
= 0V
–0.3V
–0.6V
–0.9V
ID vs. VG1S
25
(VDS = 5V)
20
15
10
– Drain current [mA]
D
I
5
0
V
G1S – Gate 1 to source voltage [V]
VG2S = 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
Page 3
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SGM2016AN
–2.0 –1.5 –1.0 –0.5 0
0
20
30
40
50
V
G1S – Gate 1 to source voltage [V]
gm – Forward transfer admittance [ms]
gm vs. VG1S
(VDS = 5V)
VG2S
= 1.5V
1.0V
0.5V
0V
–0.5V
10
–1.0V
–2.0 –1.5 –1.0 –0.5 0
0
10
15
20
25
V
G2S – Gate 2 to source voltage [V]
I
D
– Drain current [mA]
ID vs. VG2S
(VDS = 5V)
V
G1S
= 0V
–0.4V
–0.6V
–1.0V
–0.2V
–0.8V
5
0 0.8 1.6 2.2
0
1.0
1.5
2.5
3.0
f – Frequency [GHz]
NF – Noise figure [dB]
NF, Ga vs. f
0.5
0.4 1.2 2.0
2.0
5
15
20
30
35
10
25
Ga – Associated gain [dB]
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
Ga
NFmin
0.6 1.40.2 1.0 1.80 4 8 12 16 20 22
0
1.0
1.5
2.5
3.0
I
D – Drain current [mA]
NF – Noise figure [dB]
NF, Ga vs. ID
(VDS = 5V, VG2S = 1.5V, f = 900MHz)
0.5
2 6 10 14
2.0
18
0
10
15
25
30
5
20
Ga – Associated gain [dB]
Ga
NF
–1.0 –0.6 –0.2 0 0.2
0
2
3
4
5
V
G1S – Gate 1 to source voltage [V]
NF – Noise figure [dB]
NF vs. VG1S
1
–1.2 –0.8 –0.4
VG2S = 0.5V
1.0V
1.5V
(VDS = 5V, f = 900MHz)
–0.6 –0.2 0 0.2
0
10
15
25
30
V
G1S – Gate 1 to source voltage [V]
Ga – Associated gain [dB]
Ga vs. VG1S
5
–1.2 –0.8 –0.4
20
–1.0
(VDS = 5V, f = 900MHz)
VG2S = 1.5V
1.0V
0.5V
Page 4
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SGM2016AN
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) (Z0 = 50Ω)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.969
0.966
0.964
0.961
0.957
0.955
0.955
0.954
0.954
0.953
0.952
0.949
0.947
0.946
0.945
0.945
0.945
0.945
0.945
0.945
–1.3
–3.0
–4.2
–6.1
–7.2
–8.8
–9.9
–11.5
–12.8
–14.4
–15.6
–17.2
–18.2
–20.0
–21.3
–22.9
–24.1
–25.8
–27.3
–28.7
S22
MAG ANG
0.002
0.003
0.005
0.006
0.007
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.013
0.013
0.013
0.013
0.013
0.013
0.013
0.013
95.0
87.9
83.6
77.7
82.1
76.3
76.8
78.7
74.4
82.6
79.3
72.4
79.0
81.5
80.3
83.7
90.1
98.4
109.0
113.0
S12
MAG ANG
2.521
2.515
2.499
2.480
2.451
2.420
2.391
2.362
2.331
2.294
2.254
2.216
2.182
2.153
2.118
2.076
2.038
2.005
1.963
1.929
174.2
168.1
162.3
156.3
150.6
144.8
139.4
133.9
128.5
122.9
117.7
112.4
107.3
102.1
96.9
91.8
86.6
81.4
76.4
71.5
S21
MAG ANG
0.999
0.994
0.981
0.969
0.952
0.935
0.917
0.896
0.877
0.850
0.822
0.797
0.769
0.744
0.717
0.692
0.668
0.641
0.617
0.589
–3.8
–7.9
–11.8
–16.0
–20.0
–24.1
–27.8
–31.3
–34.7
–38.0
–40.9
–44.0
–46.8
–49.7
–52.4
–54.9
–57.5
–59.6
–61.6
–63.4
S11
MAG ANG
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
7.5
10.8
13.9
16.8
19.5
22.0
24.5
26.8
29.1
31.4
33.8
36.1
38.6
41.2
43.9
46.8
50.0
53.4
57.0
40.0
39.5
39.0
38.5
37.9
37.4
36.8
36.1
35.5
34.8
34.1
33.4
32.6
31.9
31.0
30.2
29.3
28.5
27.5
MAG
Rn
(Ω)
0.73
0.79
0.85
0.92
0.99
1.05
1.11
1.18
1.25
1.32
1.39
1.46
1.53
1.61
1.68
1.76
1.84
1.92
2.00
0.94
0.90
0.87
0.84
0.81
0.78
0.75
0.72
0.70
0.67
0.65
0.63
0.60
0.58
0.56
0.54
0.52
0.50
0.48
Gamma Optimum
NFmin
(dB)
ANG
Page 5
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SGM2016AN
Package Outline Unit: mm
SGM2016AN
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT
EPOXY RESIN
SOLDER PLATING
COPPER
M-281
0.1g
M-281
2.0 ± 0.2
1.3
(0.65)
(0.65)
(0.65)
(0.6)
0.3 – 0.05
+ 0.1
0.4 – 0.05
+ 0.1
0.9 ± 0.1
0 ± 0.1
0.1 – 0.01
+ 0.1
1.25
1.25 ± 0.1
2.1 ± 0.2
2
3
4
1
0.425
1 : Source
2 : Gate 1
3 : Gate 2
4 : Drain
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